表面电离的计算与测量

通过对电离度和表面下离子流密度的计算以及对靶电流和负离子的测量，对诸如钽，铁，钨，镍，铼和铂等高功函数金属表面的电离效率进行比较研究后表明：铁作为一种普通金属同样是较好的电离材料，并对影响表面电离的温度，铯蒸汽压力以及表面功函数进行了讨论。     

Si原子在CeO2(111)表面吸附与迁移的第一性原理研究

为探究Si原子在CeO₂(111)表面吸附的微观行为,采用第一性原理的方法研究了Si原子在CeO₂(111)表面的吸附作用、电子结构和迁移过程,计算了Si原子在CeO₂(111)表面的吸附能,最稳定及次稳定吸附位置的电子态密度与电荷密度分布、迁移激活能。计算结果表明：Si原子最易吸附于基底表层的O原子上,其中O桥位（O_bri）吸附作用最强,O顶位（O_t）和O三度位（O_h）吸附强度次之。Si原子仅对其最邻近的表层O原子结构影响较大,这与Si原子及其最邻近的O原子间电荷密度重叠程度增强的结果一致。Si原子最易围绕着O_t位从O_bri位向O_h位迁移,迁移所需激活能为0.849 eV。     

锑烯表面铀、钍、钚的吸附性能研究：线性响应方法结合密度泛函理论

基于密度泛函理论（Density Functional Theory,DFT）研究了锕系元素铀（U）、钍（Th）、钚（Pu）在二维金属材料锑烯表面的吸附特性。采用线性响应法拟合得到描述铀、钚5f轨道电子强格点库仑作用的哈伯德U值分别为2.24 eV和2.84 eV。利用DFT+U计算发现，锑烯难以吸附钚原子（吸附能为负值），而对铀、钍原子具有较强的表面化学吸附以及丰富的稳定吸附位点。铀和钍原子能量上最稳定的吸附位点分别为桥位——孔位之间和孔位，吸附能分别为4.40 eV和3.62 eV。通过电子结构、电荷转移和最高占据态轨道波函数分析发现，铀、钍原子使锑烯的带隙中出现杂质态，并与锑烯之间通过强p-d轨道耦合使其稳定吸附。进一步计算了吸附率随温度的变化，得出铀和钍在锑烯表面的解吸温度分别达到837 K和660 K。结果预示锑烯是一种良好的铀、钍吸附材料，在海水提铀等领域具有潜在应用。     

放射性核素U在针铁矿(010)表面吸附的第一性原理研究

采用基于密度泛函理论的第一性原理研究了有水与无水环境下放射性核素U在针铁矿(010)表面的吸附。结果表明,由于水分子与(010)表面的初始构型不同,其吸附能为-0.56~-0.85eV。同时发现在缺水的情况下,U原子可吸附在针铁矿(010)表面的替代位(T)、八面体间隙位(O)及两个O原子的桥位(B)上。其吸附能为负,大小按吸附T、B、O的顺序依次增大。水对U原子吸附能的影响较明显。当U原子占据替代位和八面体间隙位时,在其附近的水分子可增强U原子在针铁矿(010)表面的吸附,可使U原子在针铁矿(010)表面的吸附能降低1~2eV;当U原子在桥位时,水分子既可增强也可减弱U原子在针铁矿(010)表面的吸附能力,这依赖于U原子与水分子作用后其价态的变化。所有这些吸附均为放热反应。计算结果显示,由于水分子与U原子的吸附引起的表面晶格畸变较小,所有涉及的表面键长变化均不大于0.055nm。所有涉及到的反应过程中均有H、U、Fe原子上的部分电子转移到O原子上。     

Zn原子位置对ZnO晶体电子结构的影响

本文基于密度泛函理论(DFT)的第一性原理方法,计算了Zn原子位置对ZnO电子结构的影响.Zn的位置变化导致ZnO晶体发生晶格畸变,使电子结构发生变化;能带结构、能态密度(DOS)、电子密度、Mulliken布居等计算结果分析表明:Zn原子位置在z轴方向改变后使得Zn-O键长缩短,Zn的3d电子与O原子的2p电子在-8.0～-0.5 eV区域的杂化作用加强,导致O原子的部分2p电子向低能方向移动,带隙展宽.     

用延展X射线精细结构吸收光谱研究Zn(Ⅱ)-TiO2体系的颗粒物浓度效应和吸附可逆性

用延展X射线精细结构吸收光谱(EXAFS)研究了不同颗粒物浓度(Cp)下重金属Zn(Ⅱ)在锐钛型TiO2上吸附产物的微观构型,考察了Cp、吸附微观构型与可逆性的关系.宏观的吸附-解吸等温线结果表明,Zn(Ⅱ)-TiO2体系的吸附等温线随Cp的增加而显著降低,有明显的Cp效应;且吸附可逆性随Cp的增加逐渐减小.EXAFS结果表明,Zn(Ⅱ)主要是通过共用水合Zn(Ⅱ)离子及TiO2表面上的O原子结合到TiO2表面上,其平均Zn-O原子间距为(1.98±0.01)(A).同时,第二配位层(Zn-Ti层)的EXAFS图谱分析结果表明存在两个典型的Zn-Ti原子间距,即R1=(3.26±0.01)(A)(边-边结合的强吸附)和R2=(3.70±0.01)(A)(角-角结合的弱吸附).吸附密度相近、平衡浓度不同的三个吸附样品,随CP的增加,强吸附位(N1)基本不变而弱吸附位(N2)减少,两者比值(N1/N2)由0.629增加至0.690.该比值的变化从微观角度解释了宏观吸附-解吸实验中Cp增加,可逆性减小的实验现象.同时,EXAFS实验结果也从微观上证明了亚稳平衡态吸附理论(MEA理论)的吸附密度(Γ)不是状态函数的基本假设.     

水铝英石对Cs的吸附及固化性能研究

¹³⁷Cs在乏燃料中具有高产额、强放射性、高释热等特点,为将¹³⁷Cs进行稳定固化保证其长期处置安全,本文研究了水铝英石对Cs的吸附性能、固封性能和固封机制。通过调控溶液的初始浓度和pH值,研究了水铝英石对Cs的吸附性能。结果显示,在pH=5条件下,Cs的吸附率为90%,饱和吸附容量达11.1 mg/g。Cs在水铝英石上的吸附为单层吸附与多层吸附的共同作用。通过冷压-烧结工艺制备了铯榴石陶瓷固化体,研究了烧结温度和固化配方对烧结产物性能的影响。实验表明,烧结温度为1 200℃时,可生成铯榴石晶相,减容率超过55%,Cs固定率接近100%,说明水铝英石能稳定固封Cs。固化体的晶相结构与Cs的含量有关,当Cs质量含量为1%时,K原子在高温下能与Cs发生类质同象,形成Cs_xK_1-xAlSi₂O₆混晶结构,达到10%时主要为铯榴石晶相。密度泛函(DFT)计算揭示,Cs以离子键和共价键形式与铯榴石晶体中的其他原子结合。     

O2在UC(001)表面吸附的第一性原理研究

本文使用GGA+U方法研究了O₂在UC(001)表面的吸附、解离过程。结果表明：U_eff=1.5 eV能很好地再现晶格常数a和内聚能E_coh的实验结果;经过离子弛豫,最表面的两个原子层出现分层现象,各自形成两个亚层;O₂分子的吸附构型对吸附过程影响较大,吸附能在2.21～8.55 eV之间变化。通过Bader电荷、差分电荷和态密度分析,可确定O₂分子的解离活化机理为U的5f/6d电子转移至O₂的π2p和π*2p轨道。     

H原子在γ-U(100)表面吸附与扩散的密度泛函研究

采用密度泛函理论方法研究了H原子在γ-U(100)表面的吸附和扩散。结果表明：H原子在γ-U(100)表面的最佳吸附位依次为穴位、桥位和顶位,吸附能分别为2.696、2.597和2.017 eV;H原子在γ-U中的最佳间隙位为四面体间隙,其次是八面体间隙,吸附能分别为1.534 eV和0.991 eV;H原子在铀表面以及近表面层的不同吸附位之间的扩散需克服不同的势垒,相比于间隙位,H原子更倾向于在γ-U(100)表面吸附聚集。     

基于弹性背散射率的低能电子IMFP计算

采用蒙特卡罗程序对Fe、Cu、Ag和Au表面的电子弹性背散射过程进行了研究.模拟程序中电子的弹性散射截面使用在Dirac-Hatree-Fock交换势下求解得到的Mott散射截面.计算了固体表面弹性背散射率随非弹性散射平均自由程(IMFP)的变化规律,利用弹性背散射率实验数据得到能量为100-2000 eV的电子IMF...     

Electrical output parameters of efficient cylindrical thermionic energy converters

Electrical output parameters are presented for four one-element cylindrical TEC operating with cesium plasmas and electrode gaps from 0.3 to 0.8 mm. The cylindrical emitters have been made by vapor-phase epitaxial deposition of tungsten on cylindrical molybdenum substrates having [111] axial orientation under the conditions where the deposit is automatically formed faced with (110) planes. The average vacuum work function is up to 5.3 eV. The collector is made of a molybdenum-ruthernium alloys. Tests have been made on how the vacuum work function of the emitter influences the output parameters. Calculations combined with experiment have been used to estimate the work functions and electron temperatures in the plasma. Translated from Atomnaya énergiya, Vol. 87, No. 2, pp. 129–133, August, 1999.     

稀有气体原子与Pu（100）表面相互作用的第一性原理研究

采用第一性原理研究了稀有气体原子在Pu（100）表面上的吸附。计算结果表明：除He原子外,其他稀有气体原子在桥位处的吸附能均为最大;稀有气体原子在Pu（100）表面吸附后,稀有气体原子失去电荷,而Pu原子得到电荷,稀有气体原子中Xe原子的电荷转移数最大。差分电荷密度的计算结果表明,对位于Pu（100）表面穴位和桥位处的Xe原子,可观察到较明显的电荷再分布现象,这表明Xe原子具有一定极化效应,能与Pu（100）表面发生相互作用,从He到Xe,原子的极化效应越来越明显。     

On the understanding of positive and negative ionization processes during ToF-SIMS depth profiling by co-sputtering with cesium and xenon

In this paper, ionization processes of secondary ions during ToF-SIMS dual beam depth profiling were studied by co-sputtering with 500 eV cesium and xenon ions and analyzing with 25 keV Ga⁺ ions. The Cs/Xe technique consists in diluting the cesium sputtering/etching beam with xenon ions to control the cesium surface concentration during ToF-SIMS dual beam depth profiling. Several depth profiles of a H-terminated silicon wafer were performed with varying Cs beam concentration and the steady state Si, Xe and Cs surface concentrations were measured in situ by Auger electron spectroscopy. It was found that the implanted Cs surface concentration increases with the Cs fraction in the beam from 0% for the pure Xe beam to a maximum Cs surface concentration for the pure Cs beam. Secondly, the variation of the silicon work function, due to the Cs implantation, was measured in situ and during depth profiling as the shift of the secondary ion kinetic energy distributions. Finally, the positive and negative elemental ion yields generated by the Ga analysis beam were recorded and modeled with respect to varying Cs/Xe mixture. We found that the Si⁻ and the Cs⁻ yields increase exponentially with the decrease of the silicon’s work function while that of Cs⁺ and Si⁺ decrease exponentially, as expected by the electron tunneling model.     

聚丙烯腈-亚铁氰化钾钴/钛球形复合吸附剂制备及其对Cs+的吸附性能研究

本文合成了聚丙烯腈-亚铁氰化钾钴/钛球形复合吸附剂（PAN-KCoCF和PAN-KTiCF）,通过静态吸附实验,研究了接触时间、pH值、竞争离子、Cs⁺初始浓度等对PAN-KCoCF和PAN-KTiCF吸附Cs⁺效果的影响,分析了吸附过程的反应动力学和吸附等温线,并用扫描电镜（SEM）、傅里叶红外光谱（FT-IR）、X射线衍射仪（XRD）等对吸附剂进行了分析。结果表明,PAN-KCoCF和PAN-KTiCF对Cs⁺的吸附平衡时间均为16 h,随着pH值的增加,PAN-KTiCF对Cs⁺的吸附量先快速增大,随后趋于平缓,而PAN-KCoCF对Cs⁺的吸附量几乎不变,溶液中含K⁺、Na⁺、NH⁺₄、Ca²⁺或Mg²⁺等竞争离子时,PAN-KCoCF相比PAN-KTiCF对Cs⁺的选择性更高;PAN-KCoCF和PAN-KTiCF对Cs⁺的吸附动力学行为可用准二级动力学方程来描述,表面吸附为动力学控制的主要步骤;吸附过程符合Langmuir等温吸附模型,为单分子层吸附,PAN-KCoCF和PAN KTiCF对Cs⁺的饱和吸附量分别可达128.370、278.552 mg/g。     

Defect-Impurity Relationships in Electron-Damaged Silicon

Crucible grown p-type silicon crystals with various dopants were irradiated with 1 MeV electrons. The Hall coefficient measurements indicated that the introduction rate of the Ev + 0.3 eV energy level was independent of the chemical acceptor atoms and the dislocation density. This energy level was not found in similar float zone crystals. The evidence supports a defect complex with oxygen, but does not involve atoms of the chemical acceptor. Annealing studies of the Ev + 0.3 eV level indicated a first stage annealed at 400°C and a second stage anneal at 550°C. The second phase of this work involves the electron irradiation of heavily-doped samples of floating zone silicon. It was found that the defect introduction rate increased very slowly with phosphorus concentration. The introduction rate decreased linearly with the remaining car rier concentration during irradiation. In the impurity conduction region, the activation energy for conduction increased with electron irradiation. Production of vacancy-phosphorous pairs appears to be responsible for the changes observed.     

First-principle studies of radioactive fission productions Cs/Sr/Ag/I adsorption on chrome-molybdenum steel in Chinese 200 MW HTR-PM

Chrome-molybdenum steel(2·1/4Cr1Mo) is one of the main products of steam generation.The adsorption behaviors of radioactive fission products on2·1/4Cr1Mo surface are critical in the analysis of HTR-PM.Here,the adsorption behavior of cesium,strontium,silver and iodine on 2·1/4Cr1Mo was investigated with first-principle calculations that the Ag and I atoms prefer to be adsorbed at the square hollow site of the face-centered cubic iron cell with a binding energy of about 1 and 3 eV,respectively.In contrast,Cs and Sr atoms are not adsorbed on the surface of the 2·1/4Cr1Mo.These results are again confirmed via analysis of charge density differences and the densities of state.Furthermore,the adsorption rates of these fission products show that only I and Ag have significant adsorption on the metal substrate.These adsorption results explain the amount of adsorbed radionuclides for an evaluation of nuclear safety in HTR-PM.These micro-pictures of the interaction between fission products and materials are a new and useful way to analyze the source term.