一种新型沉薄铜药水的研制

本文介绍了一种应用于印制电路板化学沉铜工艺的新型沉薄铜药水。该产品具有简易分析及操作;沉积速度慢、厚度薄且背光能力优异、背光稳定性好;药水表面张力小、可满足高厚径比(13:1以上)板料生产要求;抗热冲击能力优异、同时能适应于高Tg和普通Tg板料等多种板料的优点。     

聚酰亚胺表面化学沉铜前处理的微观分析

讨论了聚酰亚胺(PI)沉铜前处理过程对孔内沉铜空洞的可能影响,利用扫描电子显微镜分析了每道前处理后PI的微观表面状态。实验表明,只有当PI表面被PI调整剂粗化后方可以提高沉铜层与PI之间的结合力,而且沉铜层与PI间的结合力还与沉铜时间相关。     

化学沉铜工艺中背光失效分析及改善探讨

主要讲述化学沉铜工艺中背光失效问题,通过对一次沉铜背光不良原因的查找及分析,并给出相应的改善措施,达到有效改善此类异常引发的沉铜背光失效的目的。     

PTH化学沉铜的稳定性

本文就在不同的化学沉铜条件下的沉铜厚度作了探讨,并提出了如何保证沉铜厚度的稳定性和合理的工艺参数。     

电镀铜粉产生原因分析及验证

电镀铜粉严重影响电路板的品质,其偶发性非常难以监测。而铜粉的产生对产品的可靠性有着致命的影响,其形成过程也曾困扰了很多优秀的工程师。本文从沉铜和电镀流程中铜粉产生的过程进行分析,论述了从沉铜到全板电镀加工过程中铜粉产生的几种原因,并通过实验验证了铜粉产生的原因。     

超高导热金刚石铜复合材料在GaN器件中的应用

金刚石铜具有高导热率和低膨胀系数,可用于大功率芯片的散热热沉.未做处理的金刚石表面非常光滑,不易附着其他金属,由于金刚石性质非常稳定,不容易被强酸和强碱进行表面处理.采用JG-01金刚石铜粗化处理液对金刚石进行粗化处理,而对铜无损伤,提升了金刚石表面结合力.金刚石铜镀层对金锡(AuSn)和锡铅(PbSn)焊料的润湿性满足GJB548B-2005要求.GaN功率放大器芯片采用金刚石铜热沉比铜钼铜热沉结温可以降低12℃.金刚石铜载板镀层润湿性良好,焊接后芯片底部的空洞率不大于3％,热沉焊接后空洞率不大于5％,满足高功率芯片散热要求.按照产品环境适应要求,对GaN功率放大器做了高低温冲击和机械振动两种环境筛选实验,最终满足可靠性考核要求.     

银活化液在PCB化学镀铜的研究

文章简述了印制电路板孔金属化用的各种钯活化液的原理和特点,提出了一种银活化液,并将其催化活性和催化效果与胶体钯进行了对比。结果表明银活化用于化学镀铜,诱导时间快,可以节约成本。     

化学沉镍金板线路阻焊剥离的原因探讨

作为印制电路板表面处理的一种方式,化学沉镍金能起到保护焊接镀层并提供可导电、可焊接界面的功能,因而得到广泛应用。然其本身仍有一些难以消除的问题,其中就包括线路阻焊剥离。本文讨论导致化学沉镍金板线路阻焊剥离的因素,包括阻焊后固化的温度(T)和时间(t)、油墨厚度(H)、油墨特性、沉镍金参数和沉镍金药水特性的影响。文章最后讲述一些基于作者经验的消除化学沉镍金板线路阻焊剥离的相对有效的措施。     

水平沉铜树脂塞孔板盖帽不良影响因素研究

树脂塞孔板通过沉铜板电等流程制作,将塞孔位置镀上一层铜,用于满足PCB后续产品的焊接,当沉铜不良,则会导致后续树脂上无法镀上所需的铜,影响PCB焊接,而影响沉铜不良的因素主要有化铜活性、活化Pd不良、沉铜药水与树脂不匹配等因素,文章主要通过实验和过程确认,验证树脂塞孔沉铜不良的品质影响因素,为能更好地解决因盖帽不良造成的报废,现从多个角度分析影响树脂塞孔盖帽不良的因素,找出最佳生产参数,有效地实现了树脂塞孔盖帽不良问题的改善。     

沉铜质量控制方法

化学镀铜（Electroless Plating Copper）俗称沉铜。印制电路板孔金属化技术是印制电路板制造技术的关键之一。严格控制孔金属化质量是确保最终产品质量的前提,而控制沉铜层的质量却是关键。日常用的试验控制方法如下：     

基于PCB喷墨技术的纳米导电银浆的研制

喷墨技术应用到PCB将是一种趋势,而该技术的核心问题是导电浆料的制备。本文采用热溶剂化学还原法,还原AgNO3制得纳米银导电浆料,并通过XRD、TEM等手段表征了其结构及形貌。实验发现:在120℃下的纳米银为球、片混合状,粒径为40 nm左右,符合喷墨要求。最后经过导电浆料的制备及150℃下的烧结,测得其导电性良好,在环氧基材表面附着力强。     

银端电极对叠层片式铁氧体电感器电感量的影响

借助射频阻抗/材料分析仪、XRD及SEM,研究了三种银端电极对叠层片式铁氧体电感器电感量的影响。结果发现:银端电极中银比例越高,电感器在电镀后的电感量下降幅度越大;对于使用银质量分数为99.49%的AG78银端电极浆料制作的外形尺寸为1.6 mm×0.8 mm×0.8 mm、电感量为(10±0.1)μH的叠层片式铁氧体电感器,其电镀后的电感量最大降幅达到15.38%。     

微喷射技术制备的化学镀金属银线微结构

采用一种称为微喷射的新方法制备了微米尺度金属银线。在该方法中,用压电陶瓷驱动器提供的微振动实现微喷嘴内部液柱的均匀破碎和喷射,并通过微喷射系统,把银氨溶液和还原剂溶液喷射到基材表面。采用金属化学沉积技术,在室温下还原出金属银,并沉积在指定的位置。构建的微喷射系统具有脉冲可控和喷射量可控的特征,并且能够实现皮升(picoliter)到飞升(femto-liter)级的微量液体的喷射,因此能够在玻璃基材上获得致密的金属银线,线宽可以按照需要在数微米至数百微米范围内调整。该方法可以在平面或曲面上直写微电路制作微型PCB线路板。由于镀层的可叠加性,该技术还可以用于三维金属微构件的制造。     

Isotropic conductive adhesives filled with low-melting-point alloyfillers

Conventional isotropic conductive adhesives (ICAs) are composed of a polymeric matrix and silver (Ag) flakes. As an alternative to lead-bearing solder, ICAs offer a number of benefits, but limitations do exist for ICA technology. ICAs filled with silver flakes generally show higher initial contact resistance, unstable contact resistance, and inferior impact strength. In this study, a new class of isotropic conductive adhesives was developed by using two different fillers, silver flakes and a low-melting-point-alloy filler, into the ICA formulations. After curing, the metallurgical connections between silver particles, and between silver particles and nickel (Ni) substrate were observed using scanning electron microscopy (SEM). Electrical properties including bulk resistance, initial contact resistance, and contact resistance shifts of the ICA were investigated and compared to those of a commercial ICA, an in-house ICA filled with only the silver flake, and a eutectic Sn/Pb solder. It was found that: (1) the low-melting-point alloy filler could wet the silver flakes and nickel substrate to form metallurgical connections, (2) this ICA had much lower bulk resistance than the commercial ICA and the in-house ICA filled with only the silver flake, and (3) this ICA showed especially low initial contact resistance and more stable contact resistance during aging on nickel metal compared to the ICA filled only with silver flakes     

碱性抛光液对硬盘基板抛光中表面状况的影响

阐述了化学机械抛光(CMP)技术在硬盘基板加工中发挥的重要作用,介绍了SiO2碱性抛光液的化学机械抛光机理以及抛光液在化学机械抛光中发挥的重要作用。使用河北工业大学研制的SiO2碱性抛光液对硬盘基板表面抛光,分析研究了抛光液中的浓度、表面活性剂以及去除量对抛光后硬盘基板表面状况的影响机理。总结了硬盘基板表面粗糙度随抛光液中的浓度、表面活性剂及去除量的变化规律以及抛光液的这些参数如何影响到硬盘基板的表面状况。在总结和分析这些规律的基础上,对抛光结果进行了检测。经检测得出,改善抛光后的硬盘基板表面质量(Ra=0.3926nm,Rrms=0.4953nm)取得了显著效果。     

Characterization and optimization of copper chemical mechanical planarization

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node.     

基于化学机械动力学的碱性铜抛光液平坦化机理研究

The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing (CMP) process from the perspective of chemical mechanical kinetics.Different from the international dominant acidic copper slurry,the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions,the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole(BTA),by which the problems caused by BTA can be avoided.Through the experiments and theories research,the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory,the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions,the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier.The kinetic energy at the concave position should be lower than the complexation reaction barrier,which is the key to achieve planarization.     

ULSI硅衬底的化学机械抛光技术

介绍了特大规模集成电路(ULSI)硅衬底的化学机械抛光工艺.对抛光机理、影响抛光速率和抛光质量的因素、抛光液中的成份特别是精抛液中的有机碱和活性剂的选择作了讨论分析,另外对抛光中出现的一些问题及解决方法进行了分析研究.     

集成电路芯片生产废水氨氮处理工艺

介绍运用生化活性污泥工艺对集成电路芯片生产工厂的排水进行氨氮处理工艺及其运行管理。     

Multilayer resonators and a bandpass filter fabricated from a novel low-temperature co-fired ceramic

The main objective of this study was to make components from a novel low-loss, low-temperature Co-fired ceramic (LTCC) dielectric, which was also compatible with a high-conductivity silver paste. The multilayer-component fabrication procedure is presented together with a composition for a tape-casting slurry, choice of conductor paste, and LTCC process parameters. A good Q factor, >100 at 2 GHz, using the novel material system has been achieved for λ/2 resonators operating in the frequency range 1.7–3.7 GHz. An excellent frequency response for a 2 GHz bandpass filter has also been achieved; the insertion losses in the passband were less than −2 dB (bandwidth 60 MHz) and the attenuation more than 25 dB in the stopband located 190 MHz higher.