溅射法制作银薄膜

作者用溅射法制作了银薄膜，并通过透射电子显微镜观察了银薄膜的电子显微像和 选区电子衍射环。银的晶体结构为面心立方（ｆｃｃ）晶格。我们以银薄膜作为标准样品确 定了透射电子显微镜的相机常数。     

溅射PZT薄膜的晶体结构和快速热处理

采用常温射频（ＲＦ）溅射法和快速热处理相结合的技术，在Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ衬底上，制备出具有铁电性的ＰＺＴ薄膜。研究了快速热处理工艺条件对ＰＺＴ薄膜性能的影响。通过Ｚ射线衍射法、ＳＥＭ和ＡＥＳ等方法，分析了ＰＺＴ薄膜的晶体结构、微结构、薄膜和电极间的界面效应。     

碲化镉薄膜太阳能电池及其溅射制备

简单综述了化舍物半导体碲化镉太阳能电池的发展历史、基本结构和核心问题,在此基础上重点总结了用溅射法制备的多晶碲化镉薄膜太阳能电池的优缺点、面临问题、发展现状,展望了它的发展趋势,并讨论了用溅射法制备渐变带隙碲化镉薄膜太阳能电池以提高转化效率的可能性.     

铝合金功能薄膜与溅射靶材

近年来,铝合金广泛用于生产多种功能薄膜,作为制备高性能溅射薄膜用的铝合金靶材也得到了相应的应用。本重点介绍应用于不同领域的几种铝合金功能薄膜,简述了铝合金薄膜与溅射靶材的制备工艺、铝合金靶材的显微结构及其对溅射薄膜性能的影响,最后指出了铝合金薄膜及溅射靶材的发展趋势。     

薄膜溅射沉积过程中的原子喷丸效应

原子喷丸效应是薄膜溅射沉积过程中的普遍现象，是指反弹工作气体原子和溅射原子构成的荷能粒子流对生长膜面的轰击作用，这些荷能粒子在向基片运输的过程中受到工作气体原子的散射。原子喷丸效应与靶材和工作气体的原子质量比以及工作气体压强密切相关。     

溅射PZT薄膜的晶体结构和快速热处理

采用常温射频（RF）溅射法和快速热处理相结合的技术，在Pt／Ti／SiO2／Si衬底上，制备出具有铁电性的PZT薄膜。研究了快速热处理工艺条件对PZT薄膜性能的影响。通过X射线衍射法、SEM和AES等方法，分析了PZT薄膜的晶体结构、微结构、薄膜和电极间的界面效应。     

铝合金功能薄膜与溅射靶材

近年来 ,铝合金广泛用于生产多种功能薄膜。作为制备高性能溅射薄膜用的铝合金靶材也得到了相应的应用。本文重点介绍应用于不同领域的几种铝合金功能薄膜 ,简述了铝合金薄膜与溅射靶材的制备工艺、铝合金靶材的显微结构及其对溅射薄膜性能的影响 ,最后指出了铝合金薄膜及溅射靶材的发展趋势     

射频溅射氧化锌薄膜晶体结构和电学性质

利用射频磁控溅射ZnO:Al(3wt%)陶瓷靶材制备ZAO薄膜,利用X射线衍射仪和霍尔测试仪分析了不同衬底温度和工作压强对薄膜结构和电学性能的影响.结果表明,随工作压强的降低,薄膜(002)优先取向增强,迁移率逐渐增大,当工作压强为0.2 Pa、衬底温度为200℃时,薄膜的电阻率为1.4×10-3Ω·cm.     

Infuence of Process Parameters on the RF Sputtered GaP Thin Films

In this work,gallium phosphide thin films were deposited on glass substrates by radio frequency(RF) magnetron sputtering technique under different depositions conditions.The X-ray diffraction analysis showed a diversity of states: from amorphous in the films deposited at 175℃ to a nearly stoichiometric and polycrystalline films,exhibiting cubic phase with preferred orientation along(220),in the films deposited at temperatures higher than 250℃.Scanning electron microscopy images revealed that all films were uniform with a smooth surface,while the energy-dispersive spectroscopy(EDS) analysis showed that there was a visible dependence on the Ga/P ratio in the deposition conditions and confirmed that a residual Ga metallic phase was presented in the surface of all the films.The Raman analysis showed the structural evolution of the GaP films was strongly dependent on the deposition conditions.The conductivity of the films was slightly dependent on the argon pressure and the rf power,but strongly dependent on the deposition temperature,mainly above 200℃.The optical transmission and absorption analyses of the GaP films revealed an indirect band gap of ～1.70 eV in the films deposited at temperatures less than 200℃,which transited to a band gap of 2.26 eV as the deposition temperature was close to 300℃.     

用溅射法合成Nd—Fe—B薄膜中的交换耦合作用的研究

采用ＤＣ对向靶溅射系统制备了Ｎｄ１４Ｆｅ８６－γＢγ薄膜,随着γ值的增大,薄膜中产生了复杂的Ｎｄ－Ｆｅ－Ｂ相,随机分布的软磁相与硬磁相之间存在着ＥｘｃｈａｎｇｅＳｐｒｉｎｇＥｆｆｅｃｔ,并对此进行了分析和讨论,得出了利用这种随机分布结构中的ＥｘｃｈａｎｇｅＳｐｒｉｎｇＥｆｆｅｃｔ是提高Ｎｄ－Ｆｅ－Ｂ薄膜最大磁能积的有效途径。     

反应溅射TiN纳米晶薄膜的结构特征和耐蚀性

利用直流反应溅射技术在不锈钢和硅基体上沉积了TiN纳米晶薄膜,采用场发射扫描电镜(FESEM)、X射线衍射(XRD)和电化学阻抗谱(EIS)技术研究了薄膜的表面形貌、相结构和耐蚀性与偏压的关系。结果表明,TiN薄膜的表面结构明显取决于所施加的偏压,适当提高偏压有利于获得细小、均匀、致密和光滑的膜层。XRD分析发现,TiN薄膜为面心立方结构,其择优取向为(111)面。实验显示,对应0V和-35V偏压的薄膜为欠化学计量比的,而偏压增加至-70V和-105V时的薄膜为化学计量比的TiN。EIS结果表明,较高偏压下的TiN薄膜几乎在整个频率范围内均表现为容抗特征,其阻抗模值明显高于低偏压下的膜层,这主要与较高偏压下的薄膜具有相对致密的微结构有关。较低偏压的TiN薄膜因结构缺陷较多其耐蚀性低于基体不锈钢。EIS所揭示的薄膜结构特征与FESEM观测结果一致。可见,减少穿膜针孔等结构缺陷有利于改善反应溅射TiN纳米晶薄膜耐蚀性。     

Impact of Gd Doping on Morphology and Superconductivity of NbN Sputtered Thin Films

We report the effect of Gd inclusion in the NbN superconductor thin films. The films are deposited on single crystalline Silicon (100) by DC reactive sputtering technique, i.e., deposition of Nb and Gd in presence of reactive N₂ gas. The fabricated relatively thick films (400 nm) are crystallized in cubic structure. These films are characterized for their morphology, elemental analysis, and roughness by Scanning Electron Microscopy (SEM), Energy Dispersive X-ray spectroscopy (EDAX), and Atomic Force Microscopy (AFM) respectively. The optimized film (maximum T _c ) is achieved with gas ratio of Ar:N₂ (80:20) for both pristine and Gd-doped films. The optimized NbN film possesses T _c (R=0) in zero and 140 kOe fields are at 14.8 K and 8.8 K, respectively. The Gd-doped NbN film showed T _c (R=0) in zero and 130 kOe fields at 11.2 K and 6.8 K, respectively. The upper critical field H _c2(0) of the studied superconducting films is calculated from the magneto-transport [R(T)H] measurements using GL equations. It is found that Gd doping deteriorated the superconducting performance of NbN.     

Nanostructural Features and Optical Performance of RF Magnetron Sputtered ZnO Thin Films

Zinc oxide (ZnO) thin films were grown on silicon substrate by RF (radio frequency) magnetron sputtering.Surface topography of these films exhibited a nanostructured granular appearance with the size of individual grains between 50 to 100 nm.Corresponding cross-sectional electron micrographs revealed columnar grains in the form of aggregated nanorods/wires with length of about 500 nm,similar to the thickness of these thin films of ZnO nucleated and grown vertically on the silicon substrate.High resolution l...     

溅射气压对HfO_2薄膜结构和光学性能的影响

HfO2薄膜的结构和光学性能与反应溅射时使用的气压有很强的依赖关系。薄膜的晶粒生长取向、生长速率和折射率明显受溅射气压的影响。所有的薄膜均为单斜相,晶粒尺寸在纳米量级。薄膜的折射率在1.92～2.08范围内变化,透过率大于85%。结果表明,这些HfO2薄膜很适宜用作增透膜或者高反膜。此外,通过Tauc公式推出光学带隙在5.150～5.433eV范围内变化,表明样品是良好的绝缘体。     

Thermal Diffusivity of Metallic Thin Films: Au, Sn, Mo, and Al/Ti Alloy

The thermal diffusivity of Au, Sn, Mo, and Al_0.97Ti_0.03 alloy thin films, which are commonly used in microelectromechanical (MEMs) system applications, is measured by two independent methods — the ac calorimetric and photothermal mirage methods. Both methods yield similar results of the thin-film thermal conductivity, but the uncertainty of the mirage technique is found to be relatively large because of the large temperature increase during the measurement. The measured thermal diffusivities of the thin films are generally lower than those of the same bulk material. Especially, the Al_0.97Ti_0.03 thin film shows a pronounced thermal conductivity drop compared with bulk Al, which is believed to be mainly due to impurity scattering. Comparison of the thermal conductivity with the electrical conductivity measured by the standard four-probe technique indicates that the relation of thermal and electrical conductivities follows the Wiedemann–Franz law for the case of Au and Sn thin films. However, the Lorentz number is significantly larger than the theoretical prediction for the case of Al_0.97Ti_0.03 and Mo thin films.     

用组合靶溅射制备Nd2Fe14B薄膜的研究

采用单质Ｆｅ、Ｎｄ、Ｂ组成的靶,用对向靶溅射系统制备出了含有Ｎｄ２Ｆｅ１４Ｂ相的薄膜。发现Ｎｄ２Ｆｅ１４Ｂ相能够较好地形成的基板温度范围是５００℃￣６００℃。并且相对于热氧化硅基板（ＳｉＯ２／Ｓｉ）,Ｎｄ２Ｆｅ１４Ｂ相能够较好地在Ｔａ基板上形成。