Fabrication of conducting poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) thin films by ultrasonic spray-assisted mist deposition method

Transparent conducting polymer, poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) thin films were fabricated by a vapor-deposition technique, ultrasonic spray-assisted mist deposition method. The thickness was well controlled from 40 to 600 nm, keeping reasonable conductivity of 300-450 S/cm. The films with thickness less than 180 nm have high (> 80%) transmission over a wide (270-800 nm) spectral region. In addition, formation of ring-dot electrode pattern with a hard-mask was demonstrated, achieving lithography-less patterning. The results encourage that this deposition method is developed as an actual process technology of transparent electrodes in devices.     

Fabrication and characterization of transparent MEH-PPV/n-GaN (0 0 0 1) heterojunction devices

n-GaN/MEH-PPV thin film heterojunction diode was fabricated by depositing MEH-PPV thin film using spin-coating process on n-GaN (0 0 0 1). The junction properties were evaluated by measuring I-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a barrier height of 0.89 eV and ideality factor of 1.7. The optical band gap of the MEH-PPV film using optical absorption method was found to be 2.2 eV and the fundamental absorption edge in the film is formed by the direct allowed transitions. At higher electric fields, the conductivity mechanism of the film shows a trap charge limited current mechanism. The obtained results indicate that the electronic parameters of the heterojunction diode are affected by properties of MEH-PPV organic film.     

Fabrication and characterization of all-oxide heterojunction p-CuAlO2 + x/n-Zn1 − xAlxO transparent diode for potential application in “invisible electronics”

Transparent p-n heterojunction diodes have been fabricated by p-type copper aluminum oxide (p-CuAlO_2 + x) and n-type aluminum doped zinc oxide (n-Zn_1 − xAl_xO) thin films on glass substrates. The n-layers are deposited by sol-gel-dip-coating process from zinc acetate dihydrate (Zn(CH₃COO)₂·2H₂O) and aluminum nitrate (Al(NO₃)₃·9H₂O). Al concentration in the nominal solution is taken as 1.62 at %. P-layers are deposited onto the ZnO:Al-coated glass substrates by direct current sputtering process from a prefabricated CuAlO₂ sintered target. The sputtering is performed in oxygen-diluted argon atmosphere with an elevated substrate temperature. Post-deposition oxygen annealing induces excess oxygen within the p-CuAlO_2 + x films, which in turn enhances p-type conductivity of the layers. The device characterization shows rectifying current-voltage characteristics, confirming the proper formation of the p-n junction. The turn-on voltage is obtained around 0.8 V, with a forward-to-reverse current ratio around 30 at ± 4 V. The diode structure has a total thickness of 1.1 μm and the optical transmission spectra of the diode show almost 60% transmittance in the visible region, indicating its potential application in ‘invisible electronics’. Also the cost-effective procedures enable the large-scale production of these transparent diodes for diverse device applications.     

Drift in the resistance of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) printed films during thermal cycling

We report on the investigation of the suitability of printed poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films for temperature sensing devices. Gravure printing with the advantage of low cost production was used to prepare thin films of PEDOT:PSS on a flexible foil substrate. The electrical resistance was studied during thermal cycling and exposure to elevated constant temperatures. A drift of the resistance which depends on time, temperature and sample makes the usage as simple temperature sensors not possible. However, a closer look on the drift of relative resistances reveals that integrated temperature-time-profiles can be measured, which might be interesting in connection with monitoring of conditions of storing and transport of sensitive goods.     

Effect of ionic liquid dispersion on performance of a conducting polymer based Schottky diode

The effect of ionic liquid (IL) dispersion on the performance of Schottky diode fabricated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been investigated. Two kinds of ILs including 1-butyl-3-methylimidazolium hexafluorophosphate (BMIPF6, hydrophobic IL) and 1-butyl-3-methylimidazolium chloride (BMICL, hydrophilic IL) were dispersed to the PEDOT:PSS by mechanical stirring and sonication processes. Schottky diodes were fabricated with these mixtures. The forward current of Schottky diodes fabricated with PEDOT:PSS dispersed BMI PF6 (SD-BMIPF6)/BMICL (SD-BMICL) by mechanical stirring is slightly reduced compared with that of Schottky diodes fabricated with pristine PEDOT:PSS (SD-PEDOT). However, SD-BMIPF6 and SD-BMICL by sonication technique show higher forward current with respect to SD-PEDOT. Compared with SD-BMIPF6 and SD-BMICL, the forward current of SD-BMICL is much higher than that of SD-BMIPF6. Since the BMICL has hydrophilic nature, the enhancement of forward current might be due to the uniform dispersion of the BMICL on the PEDOT:PSS matrix.     

Characterization of Zn1 − xMgxO transparent conducting thin films fabricated by multi-cathode RF-magnetron sputtering

Transparent conducting thin films of Al-doped and Ga-doped Zn_1 − xMg_xO with arbitrary Mg content x were deposited on glass substrates by simultaneous RF-magnetron sputtering of doped ZnO and MgO targets, and their fundamental properties were characterized. MgO phase separation in Zn_1 − xMg_xO films was not detected by X-ray diffraction. The Zn_1 − xMg_xO films show high optical transparency in the visible region. Although the carrier density of the Zn_1 − xMg_xO films decreased with increasing x, the Zn_1 − xMg_xO films showed good electrical conductivity; electrical resistivity as low as 8 × 10^− 4 Ω ·cm was achieved for the Zn_0.9Mg_0.1O:Ga thin film.