共查询到20条相似文献,搜索用时 15 毫秒
1.
多管组合曲率补偿低压带隙基准源 总被引:1,自引:1,他引:0
A new bandgap reference(BGR) curvature compensation technology is proposed,which is a kind of multiple transistor combination.On the basis of the existing first-order bandgap reference technology,a compensation current circuit consisting of a sink current branch and a source current branch is added.The BGR was designed and simulated by using Semiconductor Manufacturing International Corporation(SMIC) 0.18μm CMOS process.The simulation results showed that when the power supply voltage was 1 V,the temperature coefficient of the BGR was 2.08 ppm/℃with the temperature range from—40 to 125℃,the power supply rejection ratio (PSRR) was—64.77 dB and the linear regulation was 0.44 mV/V with the supply power changing from 0.85 to 1.8 V. 相似文献
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A new curvature-corrected bandgap reference 总被引:2,自引:0,他引:2
《Solid-State Circuits, IEEE Journal of》1982,17(6):1139-1143
A bandgap-voltage reference implemented with a new accurate circuit configuration for compensating the thermal nonlinearity of the base-emitter voltage is described. With this device, a temperature coefficient of 0.5 ppm//spl deg/C over the temperature range -25 to +85/spl deg/C has been achieved. The minimum required supply voltage amounts to only 5.5 V. 相似文献
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A low-voltage CMOS bandgap reference 总被引:1,自引:0,他引:1
《Solid-State Circuits, IEEE Journal of》1979,14(3):573-579
The CMOS bandgap voltage reference described here uses the bipolar substrate-transistor and the bipolar-like source-to-drain transfer characteristics of MOS transistors in weak inversion to implement a voltage source that is proportional to absolute temperature (PTAT). A first version of PTAT source is derived from a circuit described previously. A second version is based on a novel cell that can be stacked to obtain the desired voltage. Both versions operate down to 1.3 V with a current drain below 1 /spl mu/A. A stability of 3 mV over 100/spl deg/C has been obtained with a few nonadjusted samples. Experimental results suggest some possible improvements to extend this stability to every circuit. 相似文献
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C. Popa 《Analog Integrated Circuits and Signal Processing》2010,63(2):233-238
A new superior-order curvature-corrected voltage reference will be presented. In order to improve the temperature behavior
of the circuit, a double differential structure will be used, implementing the linear and the superior-order curvature corrections.
An original ComplemenTary with Absolute Temperature voltage generator will be proposed, using exclusively MOS transistors
biased in weak inversion for a low power operation of the voltage reference, having two great advantages: an important reducing
of the circuit silicon area and an improved accuracy (matched resistors being replaced by matched MOS active devices). The
superior-order curvature-correction will be implemented by taking the difference between two gate-source voltages of subthreshold-operated
MOS transistors, biased at drain currents having different temperature dependencies: PTAT (ProporTional with Absolute Temperature)
and square PTAT. In order to obtain a low-voltage operation of the circuit, the classical MOS transistor, which implements
the elementary voltage reference, could be replaced by a Dynamic Threshold MOS transistor. The SPICE simulations confirm the
theoretical estimated results, showing a temperature coefficient under 6 ppm/K for an extended input range 223 K < T < 333 K and for a supply voltage of 1.8 V and a current consumption of about 1 μA. 相似文献
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A precision curvature-compensated CMOS bandgap reference 总被引:11,自引:0,他引:11
《Solid-State Circuits, IEEE Journal of》1983,18(6):634-643
A precision curvature-compensated switched-capacitor bandgap reference is described which uses a standard digital CMOS process and achieves temperature stability significantly lower than has previously been reported for CMOS circuits. The theoretically achievable temperature coefficient approaches 10 ppm//spl deg/C over the commercial temperature range and uses a straightforward room temperature trim procedure. Experimental data from monolithic prototype samples are presented which are consistent with theoretical predictions. The experimental prototype circuit occupies 3500 mil/SUP 2/ and dissipates 12 mW with /spl plusmn/5 V power supplies. The proposed reference is believed to be suited for use in monolithic data acquisition systems with resolutions of 10 to 12 bits. 相似文献
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A simple three-terminal IC bandgap reference 总被引:7,自引:0,他引:7
《Solid-State Circuits, IEEE Journal of》1974,9(6):388-393
A new configuration for realization of a stabilized bandgap voltage is described. The new two-transistor circuit uses collector current sensing to eliminate errors due to base current. Because the stabilized voltage appears at a high impedance point, the application to circuits with higher output voltage is simplified. Incorporation of the new two-transistor cell in a three-terminal 2.5-V monolithic reference is described. The complete circuit is outlined in functional detail together with analytical methods used in the design. The analytical results include sensitivity coefficients, gain and frequency response parameters, and biasing for optimum temperature performance. The performance of the monolithic circuit, which includes temperature coefficients of 5 ppm//spl deg/C over the military temperature range, is reported. 相似文献
8.
A CMOS bandgap reference without resistors 总被引:2,自引:0,他引:2
Buck A.E. McDonald C.L. Lewis S.H. Viswanathan T.R. 《Solid-State Circuits, IEEE Journal of》2002,37(1):81-83
This paper describes a bandgap reference fabricated in a 0.5-μm digital CMOS technology without resistors. The circuit uses ratioed transistors biased in strong inversion together with the inverse-function technique to produce a temperature-insensitive gain applied to the proportional to absolute temperature (PTAT) term in the reference. After trimming, the peak-to-peak output voltage change is 9.4 mV from 0°C to 70°C. It occupies 0.4 mm2 and dissipates 1.4 mW from a 3.7-V supply 相似文献
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A high precision high-order curvature-compensated bandgap reference compatible with the standard CMOS process, which uses a compensation proportional to V_TlnT realized by utilizing voltage to current converters and the voltage current characteristics of a base-emitter junction, is presented. Experiment results of the proposed bandgap reference implemented with the CSMC 0.5-μm CMOS process demonstrate that a temperature coefficient of 3.9 ppm/℃ is realized at 3.6 V power supply, a power supply rejection ratio of 72 dB is achieved, and the line regulation is better than 0.304 mV/V dissipating a maximum supply current of 42μA. 相似文献
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基准电压源是在电路系统中为其它功能模块提供高精度的电压基准,它是模拟集成电路和混合集成电路中非常重要的模块。文中主要研究了带隙基准基本原理的基础上,设计了一款应用于折叠插值ADC中粗量化电路部分CMOS带隙基准源。最后通过Pspice仿真给出了实验仿真的结果。 相似文献
15.
《Solid-State Circuits, IEEE Journal of》1976,11(3):403-406
Using well-known principles a configuration has been developed for an IC reference voltage source with good performance with respect to the temperature dependency and 1/f noise. A bread-board model of this configuration has been tested. In the temperature range of 0-70/spl deg/C, the output voltage variations were less than /spl plusmn/70 ppm at an output voltage of about 2.5 V and zero load current. Low-frequency noise in a bandwidth 0.003 Hz相似文献
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A switched-capacitor fully differential bandgap reference that uses a standard double-poly CMOS process is presented. It generates a differential reference voltage of 6.2 V with a standard deviation of about 24 mV and a typical temperature stability of 15.2 p.p.m./°C over an extended temperature range from -40 to +85°C. These performance results are obtained without using any trimming in mass production. The bandgap reference only occupies 730 mil2 and dissipates 4.8 mW at±5-V power supplies. A measured power supply rejection of about 90 dB until 500 kHz is the best ever reported at high frequency 相似文献
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The circuit is suitable for precision mixed-mode systems using the differential approach, especially for the case of single-supply operation. An experimental prototype, realized in a 2-μm CMOS technology, generates a continuous-time low-impedance voltage of 2.48 V±24 mV before trimming. The temperature coefficient measured on 30 samples ranges from -20 to L32 p.p.m./°C in the temperature range from 0 to 100°C. Thanks to the differential approach, a high-frequency power supply rejection of -50 dB at 100 kHz was achieved. The active area of the chip is 1800 mil2 and the circuit dissipates 6 mW when operated from a single 5-V supply 相似文献
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基于0.5 μm CMOS工艺,设计了一种采用新颖分段曲率补偿技术的低温漂带隙基准源,利用2种不同的电流补偿结构,分别在中温和高温阶段引入正温度系数补偿电流,使得基准电压的温度特性曲线在中温和高温阶段各产生2个新的极值点,与一般的分段曲率补偿带隙基准相比,提高了补偿效率。利用Cadence软件对电路进行设计与仿真,仿真结果表明,在-40~190 ℃温度范围内,输入电压为5 V时,输出基准电压为1.231 V,温漂系数为0.885 ppm/℃,低频时电源抑制比(PSRR)为-75~-109 dB。 相似文献