Tensile behavior of pb-sn solder/cu joints

Solders of nominal 95Pb-5Sn and 60Sn-40Pb were used to join Cu plates. The effect of ternary additions of In, Ag, Sb, and Bi to the near-eutectic solder were also investigated. Bulk solder and interfacial joint microstructures were characterized for each solder alloy. The solder joints were strained to failure in tension; joint strength and failure mode were determined. 95Pb-5Sn/Cu and 60Sn-40Pb/Cu specimens were tested both as-processed and after reflow. 95Pb-5Sn/Cu as-processed and reflow specimens failed in tension in a ductile mode. Voids initiated at β-Sn precipitates in the as-processed specimens and at the Cu₃Sn intermetallic in the reflow specimens. 60Sn-40Pb/Cu failed transgranularly through the Cu₆Sn₅ intermetallic in both the as-processed and reflow conditions. The joint tensile strength of the reflow specimens was approximately half that of the as-processed specimens for both the high-Pb and near-eutectic alloys. The Cu₆Sn{5} intermetallic dominated the tensile failure mode of the near-eutectic solder/Cu joints. The fracture path of the near-eutectic alloys with ternary additions depended on the presence of Cu₆Sn₅ rods in the solder within the Cu plates. Specimens with ternary additions of In and Ag contained only interfacial intermetallics and exhibited interfacial failure at the Cu₆Sn₅. Joints manufactured with ternary additions of Sb and Bi contained rods of Cu₆Sn₅ within the solder. Tensile failure of the Sb and Bi specimens occurred through the solder at the Cu₆Sn₅ rods.     

Intermetallic compound layer formation between copper and hot-dipped 100In, 50In-50Sn, 100Sn,and 63Sn-37Pb coatings

The growth kinetics of intermetallic compound layers formed between four hot-dipped solder coatings and copper by solid state, thermal aging were examined. The solders were l00Sn, 50In-50Sn, 100In, and 63Sn-37Pb (wt.%); the substrate material was oxygen-free, high conductivity Cu. The total intermetallic layer of the 100Sn/Cu system exhibited a combination of parabolic growth at lower aging temperatures and t^0.42 growth at the higher temperatures. The combined apparent activation energy was 66 kJ/mol. These results are compared to the total layer growth observed with the 63Sn-37Pb/Cu system which showed parabolic kinetics at similar temperatures and an apparent activation energy of 45 kJ/mol. Both 100Sn and 63Sn-37Pb diffusion couples showed a composite intermetallic layer comprised of Cu₃Sn and Cu₆Sn₅. The intermetallic compound layer formed between In and Cu changed from a CuIn₂ stoichiometry at short annealing times to a Cu₅₇In₄₃ composition at longer periods. The growth kinetics were parabolic with an apparent activation energy of 20 kJ/mol. The intermetallic layer growth of the 50In-50Sn/Cu system exhibited extreme variations in the layer thicknesses which prohibited a quantitative assessment of the growth kinetics. The layer was comprised of two compounds: Cu₂₆Sn₁₃In₈ which was the dominant phase and a thin layer of Cu₁₇Sn₉In24 adjacent to the solder.     

Intermetallic compound formation and morphology evolution in the 95Pb5Sn flip-chip solder joint with Ti/Cu/Ni under bump metallization during reflow soldering

Intermetallic compound formation and morphology evolution in the 95Pb5Sn flip-chip solder joint with the Ti/Cu/Ni under bump metallization (UBM) during 350°C reflow for durations ranging from 50 sec to 1440 min were investigated. A thin intermetallic layer of only 0.4 μm thickness was formed at the 95Pb5Sn/UBM interface after reflow for 5 min. When the reflow was extended to 20 min, the intermetallic layer grew thicker and the phase identification revealed the intermetallic layer comprised two phases, (Ni,Cu)₃Sn₂ and (Ni,Cu)₃Sn₄. The detection of the Cu content in the intermetallic compounds indicated that the Cu atoms had diffused through the Ni layer and took part in the intermetallic compound formation. With increasing reflow time, the (Ni,Cu)₃Sn₄ phase grew at a faster rate than that of the (Ni,Cu)₃Sn₂ phase. Meanwhile, irregular growth of the (Ni,Cu)₃Sn₄ phase was observed and voids formed at the (Ni,Cu)₃Sn₂/Ni interface. After reflow for 60 min, the (Ni,Cu)₃Sn₂ phase disappeared and the (Ni,Cu)₃Sn₄ phase spalled off the NI layer in the form of a continuous layer. The gap between the (Ni,Cu)₃Sn₄ layer and the Ni layer was filled with lead. A possible mechanism for the growth, disappearance, and spalling of the intermetallic compounds at the 95Pb5Sn/UBM interface was proposed.     

The formation and growth of intermetallics in composite solder

The formation and growth of intermetallics at the solder/substrate interface are factors affecting the solderability and reliability of electronic solder joints. This study was performed to better understand the diffusion behavior and microstructural evolution of Cu−Sn intermetallics at the composite solder/copper substrate interface for eutectic solder and solder alloys containing particle additions of Cu, Cu₃Sn, Cu₆Sn₅, Ag, Au, and Ni. Annealing temperatures of 110 to 160°C were used with aging times of 0 to 64 days. The copper-containing composite solders generally formed thinner Cu₆Sn₅ layers, but thicker Cu₃Sn layers than were formed by the eutectic solder alone. These copper-containing additions, therefore, resulted in increased activation energies for Cu₆Sn₅ formation and decreased activation energies for Cu₃Sn formation as compared to the eutectic solder. The activation energy for Cu₃Sn formation decreased relative to eutectic solder for silver and gold composite solders even though less Cu₃Sn was formed at the substrate interface. Nickel and palladium drastically reduced the Cu₃Sn thickness and increased the Cu₆Sn₅ thickness. However, the Cu₆Sn₅ contained a substantial volume fraction of voids close to the copper substrate. We propose two mechanisms to explain the effects of the copper-containing and silver particles on the kinetics of intermetallic formation. First, the particles act as tin-sinks which remove tin from the solder and decrease the amount of tin available for reaction at the solder/substrate interface. Second, the particles reduce the cross-sectional area available for tin diffusion, which also reduces the amount of tin available at the interface for reaction.     

Intermetallic formation in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with immersion Ag surface finish

The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated. After reflow, scallop-shaped η-Cu₆Sn₅ and continuous planar η-(cu_0.9Ni_0.1)₆Sn₅ intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the case of the Sn3Ag0.5Cu specimens, an additional ε-Cu₃Sn intermetallic layer is formed at the interface between the η-Cu₆Sn₅ and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge packages. In addition, the coarsening of Ag₃Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher ball shear strength for the specimens.     

Isothermal solidification of Cu/Sn diffusion couples to form thin-solder joints

Isothermal solidification of conventional Cu/Sn diffusional couples was performed to form thin (30 μm) joints consisting of Cu-Sn intermetallics. During initial stages of isothermal solidification, both Cu₆Sn₅ and Cu₃Sn phases grow, even though the former is the dominant. After consumption of all available Sn, the Cu₃Sn phase grows reactively at the expense of Cu and Cu₆Sn₅. Finally, we obtain solder joints that consist of only Cu₃Sn. Indentation fracture-toughness measurements show that Cu₃Sn is superior to Cu₆Sn₅. Furthermore, indentations of Cu₃Sn exhibit the presence of shear bands, which are not observed in Cu₆Sn₅, implying that the former is more ductile than the latter. Ductile intermetallic-based joints formed by isothermal solidification are promising candidates to form thin (as thin as 5–10 μm or less) solder joints, as they are thermally and thermodynamically stable compared to conventional solder joints. Excess copper in the interconnect provides ductility to the interconnect.     

Sn3.8Ag0.7Cu和Sn37Pb焊点界面显微结构研究

利用扫描电子显微镜（SEM）和透射电子显微镜（TEM）研究了Sn3.8Ag0.7Cu（Sn37Pb）/Cu焊点在时效过程中的界面金属间化合物（IMC）形貌和成份。结果表明：150℃高温时效50、100、200、500h后,Sn3.8Ag0.7Cu（Sn37Pb）/Cu焊点界面IMC尺寸和厚度增加明显,IMC颗粒间的沟槽越来越小。50h时效后界面出现双层IMC结构,靠近焊料的上层为Cu6Sn5,邻近基板的下层为Cu3Sn。之后利用透射电镜观察了Sn37Pb/Ni和Sn3.8Ag0.7Cu/Ni样品焊点界面,结果显示,焊点界面清晰,IMC晶粒明显。     

The effect of Cu6Sn5 whisker precipitates in bulk 60sn-40pb solder

Hollow, Cu₆Sn₅ intermetallic rods form within molten 60Sn-40Pb solder when it reacts with Cu. It is suggested that these rods form at the Cu surface by a screw dislocation mechanism and break off into the bulk solder. Hollow hexagonal intermetallics result when the core of the rod dissolves away and fills with molten solder. The mechanical properties of bulk 60Sn-40Pb solder with and without the Cu₆Sn₅ intermetallic rods were tested in tension, at -196° C, 20° C, and 125° C. The intermetallics had no effect on strength, but decreased elongation at the lower temperatures. The intermetallics had a large effect on the fracture characteristics. At -196° C failures initiate by interfacial separation between the intermetallic and solder matrix. At 20° C failures initiate at cleaved intermetallic rods. At 125° C the intermetallic rods appear to have little effect on the mechanical properties.     

Phase identification and growth kinetics of the intermetallic compounds formed during in-49Sn/Cu soldering reactions

For the application of In-49Sn solder in bonding recycled-sputtering targets to Cu back plates, the intermetallic compounds formed at the In-49Sn/Cu interface are investigated. Scanning electron microscopy (SEM) observations show that the interfacial intermetallics consist of a planar layer preceded by an elongated scalloped structure. Electron-probe microanalyzer analyses indicate that the chemical compositions of the planar layer and the scalloped structure are Cu_74.8In_12.2Sn_13.0 and Cu_56.2In_20.1Sn_23.7, respectively, which correspond to the ε-Cu₃(In,Sn) and η-Cu₆(In,Sn)₅ phases. Kinetics analyses show that the growth of both intermetallic compounds is diffusion controlled. The activation energies for the growth of η- and ε-intermetallics are calculated to be 28.9 kJ/mol and 186.1 kJ/mol. Furthermore, the formation mechanism of intermetallic compounds during the In-49Sn/Cu soldering reaction is clarified by marking the original interface with a Ta-thin film. Wetting tests are also performed, which reveal that the contact angles of liquid In-49Sn drops on Cu substrates decline to an equilibrium value of 25°C.     

Characterization of the growth of intermetallic interfacial layers of Sn-Ag and Sn-Pb eutectic solders and their composite solders on Cu substrate during isothermal long-term aging

Single shear lap joints were made with four different solders, Sn-Pb and Sn-Ag eutectic solders, and their composites containing about 20 vol.% in-situ Cu6Sn5 intermetallic phases about 3–8 micrometers in diameter. Two sets of experiments were performed: In the first set, all of the above four solder joints were aged at 150°C for periods ranging to 5000 h and the intermetallic growth was monitored periodically. In the second set, each of the above four solder joints was aged at five different temperatures for 4000 h. The interfacial layers between solders and the Cu substrate were examined using optical and scanning electron microscopy. The growth kinetics of intermetallic interfacial layers formed between solder and Cu substrate was characterized. The effect of in-situ Cu₆Sn₅ intermetallic phases on the growth rate is discussed. The growth rate of the intermetallic layers in the eutectic Sn-Pb composite was slower for the first 150 h as compared to the eutectic Sn-Pb non-composite. The growth rate of the intermetallic layers were similar for both the eutectic Sn-Ag and eutectic Sn-Ag composite throughout the aging duration. The activation energies for Cu₆Sn₅ layer growth for the eutectic Sn-Pb and Sn-Ag solder joints are evaluated to be 111 kJ/mol and 116 kJ/mol, respectively. The eutectic Sn-Pb and Sn-Ag composite solder joints exhibit higher activation energies of 161 kJ/mol and 203 kJ/mol.     

Microstructural evolution in the Sn-Cu-Ni and Pb-Sn solder joints with Cu and Pt-Ag metallized Al2O3 substrate

The growth mechanism of intermetallics between solders and metallized substrates, after thermal aging, are investigated. The solders used in this study are unleaded Sn-Cu-Ni solder and eutectic Pb-Sn solder. The Pt-Ag/Al₂O₃, Cu block and the electroless Cu/Pt-Ag/Al₂O₃ are employed as the metallized substrates. Microstructure evolution of the interfacial morphology, elemental, and phase distribution are probed with the aid of electron-probe microanalyzer (EPMA) and x-ray diffractometry. Two kinds of intermetallics, Cu₃Sn and Cu₆Sn₅, are formed at the solder/Cu interface. However, for the solder/Pt-Ag system, only Ag₃Sn is observed at the interface. The thickness of Cu₃Sn, Cu₆Sn₅, and Ag₃Sn compound layers for all solder/metallized substrate systems shows at t^0.5 dependence at 100, 125, 150 and 170 C. According to the calculated activation energy and diffusion constant, the growth rate of Cu₃Sn and Cu₆Sn₅ intermetallics in the electroless Cumetallized substrate is relatively higher than that for Cu block one at the range of 100 C to 170 C. However, the growth rate of Cu₆Sn₅ and Ag₃Sn is reduced in the Sn-Cu-Ni solder with respect to the eutectic Pb-Sn solder. On the other hand, the Sn-Cu-Ni solder system exhibits a thicker Cu₃Sn intermetallic layer than the eutectic Pb-Sn solder after various aging times at 100 C. The thickness of Cu3Sn in the eutectic Pb-Sn solder is, however, thicker than that for Sn-Cu-Ni solder at 170 C.     

The growth of intermetallic compounds at Sn-Ag-Cu solder/Cu and Sn-Ag-Cu solder/Ni interfaces and the associated evolution of the solder microstructure

The evolution of intermetallics at and near SnAgCu/Cu and SnAgCu/Ni interfaces was examined, and compared to the behavior, near PbSn/metal and Sn/metal interfaces. Two different solder compositions were considered, Sn_93.6Ag_4.7Cu_1.7 and Sn_95.5Ag_3.5Cu_1.0 (Sn_91.8Ag_5.1 Cu_3.1 and Sn_94.35Ag_3.8Cu_1.85 in atomic percent). In both cases, phase formation and growth at interfaces with Cu were very similar to those commonly observed for eutectic SnPb solder. However, the evolution of intermetallics at SnAgCu/Ni interfaces proved much more complex. The presence of the Cu in the solder dramatically altered the phase selectivity at the solder/Ni interface and affected the growth kinetics of intermetallics. As long as sufficient Cu was available, it would combine with Ni and Sn to form (Cu,Ni)₆)Sn₅ which grew instead of the Ni₃Sn₄ usually observed in PbSn/Ni and Sn/Ni diffusion couples. This growing phase would, however, eventually consume essentially all of the available Cu in the solder. Because the mechanical properties of Sn-Ag-Cu alloys, depend upon the Cu content, this consumption can be expected to alter the mechanical properties of these Pb-free solderjoints. After depletion of the Cu from the solder, further annealing then gradually transformed the (Cu,Ni)₆Sn₅ phase into a (Ni,Cu)₃Sn₄ phase.     

The formation of Cu3Sn intermetallic on the reaction of cu with 95Pb-5Sn solder

This study characterizes the interfacial reactions that occur when Cu is soldered with 95 Pb-5Sn solder. A continuous layer of Cu₃Sn ε phase forms during the soldering process. Previous studies suggest that the intermetallic layer spalls off during soldering. However, the present work shows that the intermetallic layer is intact after soldering and that any spalling observed is due to improper polishing. A new polishing technique was developed to preserve the intermetallic layer. The Cu³Sn has a fine columnar grain structure that is very brittle. Both intergranular and transgranular fracture modes are observed. The size of the intermetallic layer is dependent upon the length of time the solder is molten. The rate of formation of e phase was measured and used to determine an activation energy for diffusion of Sn in 95Pb-5Sn of 13 kcal/mol.     

Interfacial fracture toughness of Pb-free solders

Increasing environmental concerns and pending government regulations have pressured microelectronic manufacturers to find suitable alternatives to Pb-bearing solders traditionally used in electronics packaging. Over recent years, Sn-rich solders have received significant attention as suitable replacements for Pb-bearing solders. Understanding the behavior of intermetallics in Sn-rich solders is of particular concern as the microelectronics industry progresses towards Pb-free packaging. The formation of intermetallic compounds results from the reaction of the solder with the metallization on the substrate in the electronic package. While the presence of the intermetallic is an indication of good wetting, excessive growth of the intermetallic can have a dramatically adverse effect on the toughness and reliability of the solder joint. Understanding their fracture behavior will lend insight to their reliability under mechanical and thermomechanical strains.We investigated the intermetallic compound growth associated with Sn-0.7Cu and Sn-4.0Ag-0.5Cu solders on Ni-Au, Ni-Pd, and Cu substrates. (Ni,Cu)₃Sn₄ was present at the Ni interface for both solders but was coarser in the case of Ni-Pd. Cu₆Sn₅ and Cu₃Sn were observed for both solder types. The Cu₃Sn layer was similar in thickness and appearance for both solders, but the Cu₆Sn₅ was smoother and rounder in the case of Sn-0.7Cu. Additional time above liquidus resulted in growth of the Cu₆Sn₅ layer and eventual spalling of the IMC grains. The effect of the intermetallic on the toughness (K_Q) of the solder joint was investigated using a modified compact tension specimen. Typical failure modes included bulk solder failure, intergranular separation, and intermetallic fracture, or cleavage. In some cases, additional time above solder liquidus was used to shift the dominant failure mode from that dominated by the bulk solder to interfacial delamination through the intermetallics. Solder joint fracture toughness was different between Ni-Sn and Cu-Sn interfacial intermetallics and was also affected by the relative intermetallic thickness. The relationship between solder and intermetallic microstructure and mechanical properties is discussed.     

Solid Liquid Interdiffusion Bonding of (Pb,Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid–liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag₃Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag₃Sn intermetallics but also Cu₆Sn₅ forms at the Ag₃Sn/Cu interface, which transforms into Cu₃Sn with increases in the bonding temperature or bonding time.     

Interfacial Reaction Effect on Electrical Reliability of Cu Pillar/Sn Bumps

Thermal annealing and electromigration (EM) tests were performed with Cu pillar/Sn bumps to understand the growth mechanism of intermetallic compounds (IMCs). Annealing tests were carried out at both 100°C and 150°C. At 150°C, EM tests were performed using a current density of 3.5 × 10⁴ A/cm². The electrical failure mechanism of the Cu pillar/Sn bumps was also investigated. Cu₃Sn formed and grew at the Cu pillar/Cu₆Sn₅ interface with increasing annealing and current-stressing times. The growth mechanism of the total (Cu₆Sn₅ + Cu₃Sn) IMC changed when the Sn phase in the Cu pillar/Sn bump was exhausted. The time required for complete consumption of the Sn phase was shorter during the EM test than in the annealing test. Both IMC growth and phase transition from Cu₆Sn₅ to Cu₃Sn had little impact on the electrical resistance of the whole interconnect system during current stressing. Electrical open failure in the Al interconnect near the chip-side Cu pillar edge implies that the Cu pillar/Sn bump has excellent electrical reliability compared with the conventional solder bump.     

Activation energies of intermetallic growth of Sn-Ag eutectic solder on copper substrates

Intermetallic phases formed along a Sn-Ag eutectic solder/Cu interface during solid-state aging have been characterized and the activation energies of Cu₃Sn and Cu₆Sn₅ growth have been calculated. Diffusion couples consisting of Cu/ 96.5Sn-3.5Ag/Cu were aged at 110 to 208°C for 0 to 32 days. After aging, the Cu/ solder interfaces were examined using scanning electron microscopy and energy dispersive x-ray spectroscopy. The growth rate constants for each intermetallic layer were calculated assuming a simple parabolic diffusion-controlled growth model. The activation energy for Cu₃Sn growth is 0.73 eV/atom and the activa-tion energy for Cu₆Sn₅ growth is 1.11 eV/atom.     

Intermetallic reactions in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes

The intermetallic compounds (IMCs) formed during the reflow and aging of Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes were investigated. After reflow, the thickness of (Cu, Ni, Au)₆Sn₅ interfacial IMCs in Sn3Ag0.5Cu0.06Ni0.01Ge was similar to that in the Sn3Ag0.5Cu specimen. The interiors of the solder balls in both packages contained Ag₃Sn precipitates and brick-shaped AuSn₄ IMCs. After aging at 150°C, the growth thickness of the interfacial (Ni, Cu, Au)₃Sn₄ intermetallic layers and the consumption of the Ni surface-finished layer on Cu the pads in Sn3Ag0.5Cu0.06Ni0.01Ge solder joints were both slightly less than those in Sn3Ag0.5Cu. In addition, a coarsening phenomenon for AuSn₄ IMCs could be observed in the solder matrix of Sn3Ag0.5Cu, yet this phenomenon did not occur in the case of Sn3Ag0.5Cu0.06Ni0.01Ge. Ball shear tests revealed that the reflowed Sn3Ag0.5Cu0.06Ni0.01Ge packages possessed bonding strengths similar to those of the Sn3Ag0.5Cu. However, aging treatment caused the ball shear strength in the Sn3Ag0.5Cu packages to degrade more than that in the Sn3Ag0.5Cu0.06Ni0.01Ge packages.     

Growth competition between layer-type and porous-type Cu3Sn in microbumps

Experimental study of growth competition between the co-existing layer-type and porous-type Cu₃Sn in solder microbumps of Cu/SnAg/Cu is reported. The thickness of the SnAg solder is about 14 μm and the Cu column on both sides is 20 μm. Upon wetting-reflow, the solder is reacted completely to form CuSn intermetallic compounds in a multi-layered structure of Cu/Cu₃Sn/Cu₆Sn₅/Cu₃Sn/Cu. Upon further annealing at 220 °C and 260 °C, we obtain Cu/Cu₃Sn/porous Cu₃Sn/Cu₃Sn/Cu, in which both types of Cu₃Sn co-exist and form an interface. In the layer-type growth, we assume Cu to be the dominant diffusing species, coming from the Cu column. The Cu reacts with Cu₆Sn₅ to grow the Cu₃Sn layer. In the porous-type growth, we assume Sn to be the dominant diffusing species, coming from the depletion of Sn in Cu₆Sn₅. The depleted Cu₆Sn₅ transforms to the porous-type Cu₃Sn. At the same time, the Sn diffuses to the side-wall of Cu column to form a coating of Cu₃Sn. Experimental observations of 3-dimensional distribution of voids in the porous-type Cu₃Sn are performed by synchrotron radiation tomography; the voids are interconnected for the out-diffusion of Sn. The competing growth between the layer-type and the porous-type Cu₃Sn is analyzed.     

Intermetallic reactions in Sn-3.5Ag solder ball grid array packages with Ag/Cu and Au/Ni/Cu pads

During the reflow process of Sn-3.5Ag solder ball grid array (BGA) packages with Ag/Cu and Au/Ni/Cu pads, Ag and Au thin films dissolve rapidly into the liquid solder, and the Cu and Ni layers react with the Sn-3.5Ag solder to form Cu₆Sn₅ and Ni₃Sn₄ intermetallic compounds at the solder/pad interfaces, respectively. The Cu₆Sn₅ intermetallic compounds also appear as clusters in the solder matrix of Ag surface-finished packages accompanied by Ag₃Sn dispersions. In the solder matrix of Au/Ni surface-finished specimens, Ag₃Sn and AuSn₄ intermetallics can be observed, and their coarsening coincides progressively with the aging process. The interfacial Cu₆Sn₅ and Ni₃Sn₄ intermetallic layers grow by a diffusion-controlled mechanism after aging at 100 and 150°C. Ball shear strengths of the reflowed Sn-3.5Ag packages with both surface finishes are similar, displaying the same degradation tendencies as a result of the aging effect.