电子政务系统信息安全风险的综合评价模型

信息安全风险是一种影响电子政务系统推广的关建因素,而高精度的信息安全风险评价结果是保证电子政务系统正常工作的基础,为了减少电子政务系统的信息安全风险,设计了一种新型的电子政务系统信息安全风险综合模型。根据电子政务系统的脆弱性、威胁等要素建立信息安全评价指标体系,采用因子分析法对评价指标体系进行处理,得到比较重要的评价指标,最后通过支持向量机建立电子政务系统信息安全风险模型,并在Matlab 2014平台上进行风险评价测试,该模型获得了较优的电子政务系统风险评价精度。     

电子政务信息安全风险评估方法研究

电子政务信息系统安全的重要性与日俱增,电子政务信息安全风险评估方法层出不穷。本文对目前主要的电子政务信息安全风险评估方法进行了综述性讨论,在分析了几种重要方法的优、缺点的基础上,提出了基于主成分BP人工神经网络评估模型,将BP神经网络的动态学习性应用于复杂的电子政务信息安全评估。     

基于模糊综合和AHP的内联网信息安全风险评估

随着信息化建设步伐的加快,信息安全面临的风险日益增加。为了对信息安全风险进行评估,提出一种基于模糊综合评判和AHP的信息系统安全风险评估方法,分析了系统面临的风险威胁,建立了评估指标体系,通过AHP确定指标权重,对某单位局域网信息系统安全进行了风险评估,确定了风险等级,指出了风险来源,结果表明,该方法能较好地量化评估信息系统安全风险。     

基于信息资产的风险评估方法的研究与实现

介绍了基于信息资产的信息安全风险评估方法,并设计了风险评估工具。通过使用该工具,可以完成对系统的资产、威胁、脆弱点等风险识别以及后续处置措施的跟踪,并能输出风险评估报表和统计风险发生趋势。该方法可以保证风险评估的全面性和完整性,能够有效发现、评估信息风险并加以处置。     

风险评估管理系统设计与实现

为保障关键信息系统的安全,明确系统内存在的安全隐患并采取风险控制措施,安全风险评估作为信息安全保障的重要环节,已经越来越受到各行业安全主管人员的重视。文中在广泛研究风险评估理论和实践基础上,设计实现了一个信息安全风险评估管理系统,该系统基于项目管理的形式,实现了风险评估的完整流程,包括问卷调查、资产识别、威胁识别、脆弱性识别、风险识别、统计与分析、风险控制建议等环节。在实际应用中取得了良好的效果。     

信息系统安全风险评估若干问题的探讨

信息安全风险评估规范以及相关指南的发布指导了评估工作的开展,但在实际评估过程中存在一些操作性不强或容易混淆的评估方法.本文首先回顾了目前的信息安全风险评估方法,分析了其存在的不足;然后提出了一套新的信息系统的资产分类、威胁分类和系统总体风险评估方法,并概述了建议方法的实用效果.     

广播电视光缆干线传输网传输安全风险评估方法研究

本文依据信息安全风险评估标准,针对广播电视光缆干线网资产识别、威胁识别、脆弱性识别、风险计算进行了研究,提出了广播电视光缆干线网传输安全风险评估方法,为对光缆干线网传输安全进行风险评估和自评估提供了参考。     

《基于互联网电子政务信息安全指南》国标草案征求意见

全国信息安全标准化技术委员会所属的信息安全管理工作组（WG7）于2006～2007年组织了国家标准《基于互联网电子政务信息安全指南》的起草工作,该标准规定了基于互联网电子政务信息安全保障框架、系统组成、信息安全技术、信息安全评估、信息安全管理、安全接口和信息安全保护实施过程。     

层次化的信息系统风险评估方法研究

由于当前主流的信息安全风险评估方法仅关注系统组件的风险,很少立足于业务风险视角,难以满足业务人员、组织管理者等不同层面人员对信息安全风险的理解。文中提出了一种层次化风险评估方法来量化风险,该方法将信息系统安全风险分为组件级、系统级和组织级3个层面,分别关注系统单一组件的风险、单个信息系统风险和多个信息系统构成的组织总体风险。通过对3个层次风险的逐层分析,使得风险分析结果更为全面和客观地反映安全风险评估的层次化需求。     

信息安全管理体系(ISMS)及其构架(一)(二)

3.进行信息安全风险评估:信息安全风险评估的复杂程度将取决于风险的复杂程度和受保护资产的敏感程度,所采用的评估措施应与组织对信息资产风险的保护需求相一致.在组织进行信息安全风险评估时,具体有三种风险评估方法可供选择.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.