半导体量子器件

概述了半导体量子微结构中的量子效应，并介绍了谐振隧道器件。评述了新的量子微结构，如单电子隧道器件，电子波衍射晶体管和量子线量子箱激光器的开发，还了量子微结构的尺寸要求和研究课题。     

半导体量子器件

概述了半导体量子微结构中的量子效应，并介绍了谐振隧道器件，评述了新的量子微结构，如单电子隧道器件，电子波衍射晶体管和量子线量子箱激光器的开发，还讨论了量子微结构的尺寸要求和研究课题。     

探索量子微结构的新阶段

概述了超薄层量子结构中的量子效应及其器件之后，以立体量子微结构为重点，介绍了其中的电子的波动行为，例如普适的电导波动、弹性散射和声子散射的抑制等，并简要介绍了量子线和量子箱激光器以及电子波衍射晶体管，还讨论了对量子微结构的尺寸要求。     

应变自组装InAs/GaAs量子点材料与器件光学性质研究

采用MBE技术生长应变自组装InAs/GaAs量子点微结构材料,以这种纳米尺度微结构材料作有源层制备出激光二极管.研究了材料的光致发光和器件电致发光的特性.条宽为100μm、腔长为1.6mm,腔面未经镀膜的量子点激光二极管,室温下最大光功率输出为2.74W.     

应变自组装InAs/GaAs量子点材料与器件光学性质研究

采用MBE技术生长应变自组装InAs/GaAs量子点微结构材料,以这种纳米尺度微结构材料作有源层制备出激光二极管.研究了材料的光致发光和器件电致发光的特性.条宽为100μm、腔长为1.6mm,腔面未经镀膜的量子点激光二极管,室温下最大光功率输出为2.74W.     

应变自组装InAs／GaAs量子点材料与器件光学性质研究

采用MBE技术生长应变自组装InAs／GaAs量子点微结构材料，以这种纳米尺度微结构材料作有源层制备出激光二极管，研究了材料的光致发光和器件电致发光的特性，条宽为100μm、腔长为1.6mm，腔面未经镀膜的量子点激光二极管，室温下最大光功率输出为2．74W。     

半导体超晶格物理与器件（17）

半导体超晶格物理与器件（１７）彭英才（河北大学电子与信息工程系０７１００２）第五章量子效应器件量子效应器件是指利用超晶格、量子以、量子线和量子点等微结构和超微结构所具有的各种量子化效应设计和制作的新一代电子器件，这是微电子学发展到纳米电子学阶段的必然...     

半导体技术

TN301 95040518半导体超晶格微结构中多能谷效应(1)/阵舫时(南京电子器件所)11半导体杂志一1995,20(1)一22一33 从半导体量子阱的量子限制效应出发,研究了布里渊区中的多能谷效应。应用这一模型导出了超晶格中的谐波直接带隙,从而解释了锗硅应变超晶格发光特性,由此设计出优化的锗硅应变超晶格结构。图6表3参26(木)TN301 95040519半导体超晶格物理和器件(15)/彭英才(河北大学)11半导体杂志一1995,20(1)一礴9~55 论述了量子细线与量子点微结构中的电子输运问题。图1参8(木)一46一TN304 95040520曾崩探测器用硅材料中微缺陷的初步探讨/浦树…     

GSMBE生长的非均匀多纵模量子点激光器

报道了InAs/GaAs量子点激光器GSMBE生长,激光器器件有源区包含了层叠的5层InAs量子点微结构.AFM显微图像显示相同生长条件下的未覆盖表层量子点样品呈现出不均匀的多模尺寸分布.制作了脊条宽为6 μm,腔长为1.5 min的未镀膜激光器器件,器件室温连续工作的最大输出功率达到51.1 mW (单面),最高工作温度70℃.激光光谱包含一系列非均匀的多纵模簇,且随着电流的增加,纵模簇个数也增加.经分析认为,光谱的这一不同于常规半导体激光器的性质是由量子点的非均匀性以及量子点之间互不关联性导致的,是多个互相无关联的不同特性激光的集体行为.     

半导体超晶格物理与器件（16）

半导体超晶格物理与器件（１６）彭英才（河北大学电子与信息工程系０７１００２）三、纳米半导体结构的光学性质所谓纳米半导体结构一般是指结构尺寸为几～几＋ｎｍ的低维量子体系。目前研究最活跃的有采用选择外延生长技术制备的量子线与量子点微结构，采用低压成膜技术...     

Deterministic doping

Emerging programs in a new field of technology that employs quantum mechanical principles in engineered devices has driven new approaches to atomic-scale fabrication. Of crucial importance is the capability to configure single atoms in silicon, diamond and other materials. These engineered materials form the foundations of quantum technology which includes the fields of quantum communication and quantum computing. Quantum technology exploits quantum superposition and entanglement in potentially scalable quantum devices. To insert donor atoms in a large-scale device methods for deterministic ion implantation have been developed. These methods potentially allow the standard techniques developed for engineering materials for the Information Technology industry to be employed to make devices that exploit the new technologies. This paper reviews the emerging new technologies for deterministic doping to address the challenges of engineering atoms in the solid state.     

Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode

Key device requirements for maximising resolution in an optical coherence tomography system are discussed. The design and operating parameters of a multi-contact quantum dot superluminescent diode incorporating a number of features which inhibit lasing are described. Such devices allow the independent tuning of emission power and spectral shape; hence the penetration depth and resolution in optical coherence tomography are decoupled. The emission spectrum of a device utilising chirped quantum dots is shown to be tuned to produce a broadband single Gaussian emission, centred at the required wavelength of 1050 nm, with high output powers than a single contact device.     

Advances in self-assembled semiconductor quantum dot lasers

In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as MBE and MOVPE. The laser performance successes gained using quantum wells in optoelectronic devices can be extended by adopting quantum wire and quantum dot structures. There have been several reports of successful lasing action in semiconductor dot structures within the past few years. In this article I will briefly review the recent progress in the development of quantum dot lasers.     

能带混合量子阱的触发功能和异质谷间转移电子放大器件的研究

运用MonteCarlo理论模拟、二极管除穿伏安特性、器件振荡性能和射频输入信号激励下的放大功能研究了异质谷间转移电子器件中能带混合量子阱的触发功能。理论和实验研究发现，当能带混合量子讲中没有产生足够的异质谷间转移电子效应时，即使有源层中加有足够的电场仍然不能产生振荡。异质谷间转移电子效应成为器件进行射频工作的必要条件。在适当设计的器件中，运用输入射频信号也能激励异质谷间转移电子效应而触发输出放大信号。应用这一原理研制成8mm波段工作的稳态放大器，解决了二极管稳态放大器中的自激振荡问题。最后讨论了利用能带混合量子讲的触发功能来制作新的三端器件和各类功能器件的可能性。     

Organic quantum wells with multiple negative differential resistance peaks and its photoswitch effect

Organic optoelectronic devices have experienced great progress in recent decades. However, quantum well has long been a challenge for organic semiconductors due to the weak intermolecular interactions, the difficulty of realizing high quality alternate crystalline films. Here, we construct a type II organic crystalline quantum well, in which both electron quantum well and hole quantum well show symmetrical and multiple negative differential resistance peaks, respectively. The blueshifts of absorption spectra and the peak voltage decreasing under illumination conditions are observed. Due to high absorption coefficient of organic semiconductors, photoswitch effect by taking advantage of negative differential resistance of organic quantum well, which owns very thin device structure is demonstrated. Our results prove the promising applications of organic quantum wells, which broaden the types of organic optoelectronic devices.     

斜角光纤切割技术和应用

研究了斜角光纤切割技术和方法,制作出符合使用要求的耦合器件,分析了斜角光纤与器件耦合能降低量子噪声的原因。     

Electrical and optical properties of self-assembled quantum dots

One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two, i.e. quantum wires (QWi) and quantum dots (QDs), in order to realise novel devices that make use of low-dimensional confinement effects.One of the promising fabrication methods is to use self-organised three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. Quantum dots, for example, are believed to provide a promising way for a new generation of optical light sources such as injection lasers. While quantum well structures are already widely used in optoelectronic devices, QWi and QDs appear to be much more difficult to fabricate for this purpose. Some of the electrical and optical properties of self-assembled QDs will be reported in this paper.     

Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials

We developed a quantum-mechanical simulation code to study subthreshold performances and carrier quantum confinement in double-gate MOSFETs with high-mobility channel materials like Ge and III-V semiconductors. The code is based on the two-dimensional and self-consistent numerical solving of Poisson and Schrödinger equations coupled with the drift-diffusion transport equation. We systematically evaluate and analyze drain-induced barrier lowering and carrier quantum confinement in Si, Ge, In_0.53Ga_0.47As and GaAs based double-gate devices. Results show that SCEs in In_0.53Ga_0.47As and GaAs devices are lower than in Si and Ge counterparts. However, when the channel film thickness is reduced, carrier confinement is found to strongly impact double-gate device operation with high-mobility materials owing to their low confinement effective mass in the lowest energy valley.     

量子效应器件正在崛起

本文介绍了量子效应器件的定义、分类、特点、工作原理、特性、制造方法和应用。还介绍了国内研制量子效应器件的动态和成果。