超级电容器用(RuO_2/MnO_2)·n H_2O复合电极的研究

采用电沉积法制备超级电容器用钽基(RuO_2/MnO_2)·n H_2O复合薄膜电极材料,制定钽箔基体的预处理方法、复合溶液主盐的配置比例、电沉积参数和热处理参数。重点研究了初始沉积液中Mn~(7+)与Ru~(3+)摩尔浓度比以及不同热处理参数对((RuO_2/MnO_2)·n H_2O复合薄膜附着力与电学性能的影响。借助扫描电镜、X射线衍射仪对薄膜的形貌和物相分析,用电化学工作站对该复合薄膜电化学性能进行测量。实验结果表明,当初始沉积液中Mn~(7+)与Ru~(3+)摩尔比为3:1,热处理温度为250℃,时间为2.5h,所制备出的复合电极薄膜具有较好的附着力和较高的比电容,分别为14.8MPa与418F/g。该复合薄膜在不同扫描速率下的循环伏安图具有高度可逆的氧化和还原曲线,说明其具有很明显的电容特性,是一种较为理想的RuO_2基复合薄膜。     

丙烯酸酯压敏粘合剂及其粘带的研究

本文较详细地介绍一种溶剂型热固性丙烯酸酯压敏粘合剂及其聚酰亚胺薄膜、聚萘酯薄膜、聚酯薄膜、聚丙烯薄膜以及聚芳酰胺纤维纸和牛皮纸等六种压敏粘带的制备、性能。重点讨论一些原材料的用量比以及工艺条件等因素对制品性能的影响。     

耐高温绝缘漆的制备及其在玻璃丝包线上的应用

用自制有机硅低聚物与环氧树脂合成环氧改性有机硅树脂,通过添加无机填料和有机助剂制备了耐高温绝缘漆和浸漆玻璃丝包线,并对绝缘漆的性能及影响因素进行了分析。结果表明,所制得的耐高温绝缘漆具有较高的耐热性和较好的柔韧性、附着力,浸漆玻璃丝包线综合性能良好。     

磁控溅射制备免退火钴酸锂正极薄膜的研究

采用射频磁控溅射法制备钴酸锂正极薄膜,通过对溅射功率的研究,制备出不需要进行退火处理仍具有60μAh/(cm2·μm)的比容量的正极薄膜.采用×射线衍射(XRD)和扫描电子显微镜(SEM)对钴酸锂薄膜的结构和形貌进行了研究,并分析了其对钴酸锂薄膜正极性能的影响.结果表明不同功率制备的钴酸锂薄膜具有不同的结晶取向和结晶度,其对正极薄膜的性能有具有决定性的影响,适合的功率下制备的钴酸锂薄膜在不退火处理的情况下仍具有较高的容量和较好的循环性能.同时研究了采用磁控溅射的铝薄膜作为集流体,代替铂或金等贵金属薄膜集流体,大幅减低了薄膜电池正极的制备成本.     

钛酸锶钡薄膜性能优化研究

综述了钛酸锶钡[Ba1-xSrxTiO3（简称BST）]薄膜的制备方法及研究进展,介绍了衬底和电极材料对BST薄膜性能的影响,讨论了引入缓冲层、掺杂和制备组分梯度薄膜对其性能的影响,并指出了未来BST薄膜材料的研究发展方向。     

水溶性聚酯树脂硅钢片漆的制备

针对传统硅钢片漆溶剂毒性大、污染大的问题,以邻苯二甲酸酐、间苯二甲酸、新戊二醇、偏苯三酸酐和三羟甲基丙烷等为主要原料,合成了水溶性聚酯树脂硅钢片漆.通过对比不同配方漆液的粘度、胶化时间、漆膜的硬度、附着力以及韧性等因素,分析不同原料及不同助剂对树脂性能的影响,得出了最佳的树脂配方.结果表明,制备的树脂漆膜的综合性能良好...     

水溶性丙烯酸树脂硅钢片漆的研制

采用溶液聚合法,以甲基丙烯酸甲酯、丙烯酸、苯乙烯和丙烯酸丁酯为单体,正丁醇为溶剂,BPO为引发剂,制备了水性丙烯酸树脂.通过对比不同配方树脂对应漆液的粘度、凝胶化时间和水溶性,以及固化后漆膜的硬度、韧性和附着力等因素,确定了树脂的最佳配方.分析了引发剂、中和剂和助剂用量对硅钢片漆性能的影响.结果表明:制备的硅钢片漆漆膜...     

纳米杂化聚酰亚胺薄膜制备方法的研究进展

概述了纳米杂化聚酰亚胺薄膜的主要特点,分别介绍了采用共混法、溶胶-凝胶法、原位聚合法和插层复合法等方法制备PI薄膜的方法及其性能,分析了各种改性技术存在的问题,并对纳米杂化PI薄膜的发展趋势进行了展望.     

薄膜锂电池SnOx阳极材料研究进展

锡基氧化物(SnOx)作为全固态薄膜锂离子电池的阳极材料具有熔点高、比容量大、性能稳定、安全性好、易于制备等优点受到人们的重视。介绍了SnOx阳极薄膜的特点,分析了SnOx的贮锂机理,重点评述了不同方法制备SnOx薄膜的结构和电化学性能,旨在进一步优化高性能锂离子电池阳极薄膜的制备过程,为全固态薄膜锂离子电池性能改善提供借鉴和启发。     

SOFC电解质薄膜制备技术研究进展

针对固体氧化物燃料电池(SOFC)电解质薄膜制备技术与电池性能研究进展进行了综述。SOFC是高效率的电源装置,但其效率严重依赖于电解质层的薄膜化。对比分析了目前电解质薄膜制备中使用的干压法、流延法、丝网印刷、浸涂法、溶胶凝胶法、电泳沉积、物理气相沉积、化学气相沉积、等离子喷涂等技术的优劣之处,并探讨了不同制备技术对电池综合性能的影响。     

磁控溅射镍膜及其性能的研究

采用磁控溅射法在聚对苯二甲酸乙二醇酯(PET)基材上制备了镍薄膜。用扫描电子显微镜(SEM)分析溅射功率、溅射真空室气压等工艺参数对镍薄膜表面形貌的影响;研究了溅射工艺参数与薄膜性能之间的关系。实验结果表明,在室温下,随着溅射气压的增加,沉积速率和粒径都是先增加后又逐渐变小,而薄膜的电阻则随着压强的增大先减小后逐步增大;薄膜的表面粗糙度随着溅射功率的增加而增大;膜层与基材的剥离强度较大且均匀,膜层结合较为牢固,薄膜的耐摩擦性能较为优良。     

Effects of oxygen partial pressure on the preferential orientation and surface morphology of ITO films grown by RF magnetron sputtering

In this study, effects of oxygen pressure in the sputtering ambient on the preferential orientation and resultant surface morphology of ITO films grown by RF magnetron sputtering were investigated. ITO film grown with pure Ar gas shows a preferential (400) plane orientation parallel to the substrate surface and a sawteeth-shaped rough surface. ITO film grown in the sputtering ambient of Ar and oxygen mixtures shows a preferential (222) plane orientation and a flat and smooth surface. The differences in the growth rate, surface morphology, and roughness between the preferentially orientated films were discussed in terms of the surface energy of planes. The electrical and optical properties of the films were examined.     

Self-polarization effect in Pb(Zr,Ti)O3 thin films

Abstract

The self-polarization effect is investigated in Pb(Zr,Ti)O₃ (PZT) thin films deposited by sol-gel and magnetron sputtering techniques. The effective piezoelectric coefficient of as-grown films, which is proportional to their initial polarization (self-polarization), is measured by a sensitive interferometric technique as a function of the annealing temperature, PZT composition, film thickness and bottom electrode material. The results indicate that the films are self-polarized by an internal bias field upon cooling through the phase transition temperature. It is suggested that a built-in field of a Schottky barrier between the PZT film and the bottom electrode is responsible for the observed effect. Self-polarization of the films is found to be very stable and in some cases to be as high as 90% of that produced by the subsequent room temperature poling. This property is very useful for piezoelectric and pyroelectric applications of PZT films since the poling procedure can be avoided. The properties of self-polarization are found to be similar for the films produced by sol-gel and sputtering techniques, suggesting that the same mechanism is operative in both cases.     

Ni65Co35薄膜各向异性磁电阻性能的研究

选用Ｎｉ６５Ｃｏ３５合金靶材，利用射频磁控溅射的方法成膜，采用四控针法测量磁电阻率，分别研究了溅射工艺参数（工艺气压、偏压、功率、基片温度等）对薄膜电阻性能的影响，并对影响的机理作了理论上的分析；另外还对Ｎｉ６５Ｃｏ３５薄膜的热处理动力学进行了研究，求取了激活能。研究结果表明，溅射工艺参数对Ｎｉ６５Ｃｏ３５薄膜的电阻力有较大的影响，适当的溅射参数能有效地提高磁电阻率；Ｎｉ６５Ｃｏ３５薄膜退火处理后     

Three dimensional arrays of hollow gadolinia-doped ceria microspheres prepared by r.f. magnetron sputtering employing PMMA microsphere templates

Preparation of macroporous gadolinia-doped ceria (CGO) films was attempted by r.f. magnetron sputtering. A polymethylmethacrylate (PMMA) microsphere film was fabricated as a template on a Pt-coated silicon substrate by dripping a PMMA microsphere aqueous dispersion onto the substrate. CGO was deposited onto the PMMA microspheres by sputtering; the PMMA microspheres were found to shrink during the sputtering, and thus the CGO also coated the surface of PMMA microspheres beneath the top layer of the film. Films (ca. 1.5 μm thick) consisting of three dimensional arrays of hollow CGO microspheres (ca. 700 nm in diameter) with large porosity were obtained after annealing the CGO/PMMA microsphere composite film.     

制备条件对Fe-Ta-N薄膜的结构和软磁性能的影响

应用射频磁控溅射法制备了Fe-Ta-N薄膜,系统地研究了制备工艺地Fe-Ta-N薄膜结构和软磁性能的影响,首先,制备了不同钽含量的薄膜,发现（Fe89.5Ta10.5）-N薄膜具有很好的软磁性能,氮分压P（N2）=5%时,矫顽力获得最小值,Hc=14A/m。此时,样品呈现纳米晶结构,晶粒尺寸D≤10∧-8m,并且,钽掺杂能抑制铁氮化合物的生成,使薄膜在高氮分压范围内具有高的饱和磁化强度,Ms=1242kA/m。其次,考察了热处理对（F89.5Ta10.5）-N薄膜结构和磁性能的影响,P(N2）=5%时,沉积态薄膜为非晶结构,矫顽力很大;在热处理过程中,薄膜逐渐晶化,400℃热处理后,晶化度达到40%,形成纳米晶结构,矫顽力迅速减小,最后,比较了不同溅射功率和总气压对（Fe89.5Ta10.5）-N薄膜结构和磁性能的影响,发现薄膜可在较大的溅射功率和总气压范围内保持优异的软磁性能,是非常适于工业生产的薄膜磁头材料。     

永磁薄膜材料的研究进展

永磁薄膜是相关电子器件及系统小型化、集成化的关键材料。首先概括介绍了永磁薄膜的常用制备技术,包括电沉积、溅射、激光脉冲沉积等方法。在此基础上,总结了各种永磁薄膜(金属合金、铁氧体、稀土化合物等)的国内外研究进展,以及在相关器件上的应用。最后展望了永磁薄膜的发展趋势和前景。     

Effects of sputtering pressure and thickness on properties of ZnO:Al films deposited on polymer substrates

Highly conducting and transparent aluminum doped zinc oxide (ZnO:Al) thin films have been deposited on polyimide substrate by r.f. magnetron sputtering at room temperature. The influence of sputter pressure and thickness on the structural, electrical, and optical properties of ZnO:Al films deposited on polyimide substrate is reported. The crystallinity and degree of orientation was increased by decreasing the sputter pressure. For higher sputtering pressures an increase on the resistivity was observed due to a decrease on the mobility and the carrier concentration. As the film thickness was increased, the crystallite sizes were increased, but the average transmittance in the wavelength range of the visible spectrum was decreased. The electrical performances of the ZnO:Al films deposited on glass substrates are slightly worse than the ones of the films deposited on polyimide substrates with same thickness. The lowest resistivity of 8.6?×?10^?4 Ω cm can be obtained for films deposited on glass substrate with the thickness of 800 nm.     

Structural and electrochemical properties of Nichrome anode thin films for lithium battery

Low cost anode materials having a high electrochemical efficiency have been critical in the success of thin film batteries that are applicable in ubiquitous environments as a portable energy source. Nichrome thin films are ideally suited for use in hybrid assemblies but their applications include precision integrated circuits in fields of telecommunications, instrumentation, power supplies, military and medical equipment where low noise and good power dissipation are required. With such a wide spectrum of applications, it is important to understand the electric behavior of the Nichrome alloy thin films by their microstructure. In this work, nanocrystalline films of nickel chromium alloys were deposited on alumina substrate by radio frequency (RF) magnetron sputtering technology. High purity nickel and chromium sputtering target were used for the deposition. First, aluminum was deposited on ceramic substrate acts as a current collector and over that NiCr was deposited by RF sputtering method. Both the layers were analyzed for structural and electrical properties using X-ray diffraction (XRD), energy dispersive X-ray analysis (EDS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and cyclic voltammetry. The XRD peak confirms that deposited NiCr and Aluminum have tetragonal and cubic structures, respectively. The crystallite size was determined by full width at half maximum of XRD peaks. Structure, composition and the properties of the film are the major focus of this paper. Composition ratio between nickel and chrome obtained by EDS is 1:1. Particle size and microstructure of the film have been studied by SEM and AFM. Electrochemical properties of the films were analyzed. Reaction mechanism for the insertion and excretion is reported. After Lithium insertion and extraction the effect on the surface and structure of the thin film has been studied. The composition of equilibrium phases of NiCr as useful as attracting anode for the thin film battery. Nichrome on aluminum thin films as an anode has been attracted because it provides practical advantages including low cost production and competitive electrical performance.     

膜厚对FeCoAlON薄膜的静态与动态磁性的影响

采用射频磁控溅射法在Si(100)基片上沉积了不同氮分压和不同厚度的(Fe70.6Co29.4)88.2Al11.8-ON薄膜,研究了膜厚对5%氮分压沉积的薄膜静态与动态磁性的影响。当FeCoAlON薄膜的厚度较小时,薄膜表现出面内单轴磁各向异性,当薄膜厚度增加到210 nm时,薄膜出现了条形畴。动态磁性研究显示,对于面内单轴磁各向异性以及条形畴结构的FeCoAlON薄膜,都表现出优异的高频响应。特别地,对于具有条形畴结构的FeCoAlON薄膜,其磁谱曲线表现为多峰共振的特点。