量子点量子阱ZnS/HgS/ZnS/CdS的制备与光学特性

运用湿化学与表面化学方法制备了ＺｎＳ／ＨｇＳ／ＺｎＳ／Ｃｄｓ量子点量子阱（ＱＤＱＷ）结构,以吸收光谱、光致发光及激光谱表征该结构,并研究了外层ＣｄＳ对材料发光特性的影响,首次观测到ＣｄＳ对中间ＨｇＳ阱层发光的增强作用,并归因子隧道效应的存在。     

零维氧化锌纳米量子点的水热法合成及其量子效应表征

介绍了一种以乙醇为溶剂,在低温、常压下水热制备零维氧化锌量子点(ZnO QDs)的简单方法,并运用该方法制备了尺寸均一、形貌规则的ZnO QDs。利用荧光分光光度计和紫外-可见分光光度计分析了其受激辐射特征波长的蓝移和深能级发光变化,证实其光学量子效应明显,光致发光的绿光发射增强。讨论了可能导致其绿光发射增强的原因并提出了有待验证的问题。     

InP量子点的掺杂及其光学性能

采用原位成核掺杂法合成了Li、Zn金属离子掺杂的InP量子点(分别记为Li: InP和Zn: InP), 并研究了掺杂剂对量子点的结构、尺寸和光学性能的影响。研究结果表明, Li⁺、Zn²⁺掺杂的InP量子点结晶度较高且尺寸均匀。虽然Li⁺掺杂未引起InP量子点的结构发生变化, Li⁺未进入InP晶格, 但是抑制了InP量子点的成核与长大, 使其吸收谱和荧光谱均发生大幅度的蓝移。Zn掺杂同样也抑制InP量子点的成核与长大, 并且形成InP/Zn₃P₂/ZnO复合核壳结构, 显著增强了InP量子点的荧光, 尤其是当Zn掺杂浓度(Zn/In原子比)为0.2时, InP量子点的荧光强度增加近100多倍, 这对短波长InP量子点的合成具有一定的参考价值。     

Spintronic Transport and Kondo Effect in Quantum Dots

We investigate the spin-dependent transport properties of quantum-dot based structures where Kondo correlations dominate the electronic dynamics. The coupling to ferromagnetic leads with parallel magnetizations is known to give rise to nontrivial effects in the local density of states of a single quantum dot. We show that this influence strongly depends on whether charge fluctuations are present or absent in the dot. This result is confirmed with numerical renormalization group calculations and perturbation theory in the on-site interaction. In the Fermi-liquid fixed point, we determine the correlations of the electric current at zero temperature (shot noise) and demonstrate that the Fano factor is suppressed below the Poissonian limit for the symmetric point of the Anderson Hamiltonian even for nonzero lead magnetizations. We discuss possible avenues of future research in this field: coupling to the low energy excitations of the ferromagnets (magnons), extension to double quantum dot systems with interdot antiferromagnetic interaction and effect of spin-polarized currents on higher symmetry Kondo states such as SU(4).     

Solid‐State Electrolyte‐Gated Graphene in Optical Modulators

The gate‐tunable wide‐band absorption of graphene makes it suitable for light modulation from terahertz to visible light. The realization of graphene‐based modulators, however, faces challenges connected with graphene's low absorption and the high electric fields necessary to change graphene's optical conductivity. Here, a solid‐state supercapacitor effect with the high‐k dielectric hafnium oxide is demonstrated that allows modulation from the near‐infrared to shorter wavelengths close to the visible spectrum with remarkably low voltages (≈3 V). The electroabsorption modulators are based on a Fabry–Perot‐resonator geometry that allows modulation depths over 30% for free‐space beams.     

退火条件对Sn量子点生长和红外光学性质的影响

首次采用固相外延生长技术在Si(001)表面直接生长Sn量子点,并应用原子力显微镜(AFM)、X射线衍射(XRD)和同步辐射傅里叶红外光谱(FTIR)研究了退火条件对量子点样品的表面形貌、结晶性和红外光学性质的影响.AFM结果表明,随着退火温度的升高和退火时间的延长,量子点的平均尺寸变大,面密度减小.XRD结果显示,外延得到的Sn量子点为四方结构的β-Sn,与衬底的相对取向为Sn(110)//Si(001).由于β-Sn量子点的尺寸仍较大,同步辐射FTIR谱中没有观察到量子点的特征吸收峰.     

Direct Optical Patterning of Quantum Dot Light-Emitting Diodes via In Situ Ligand Exchange

Precise patterning of quantum dot (QD) layers is an important prerequisite for fabricating QD light-emitting diode (QLED) displays and other optoelectronic devices. However, conventional patterning methods cannot simultaneously meet the stringent requirements of resolution, throughput, and uniformity of the pattern profile while maintaining a high photoluminescence quantum yield (PLQY) of the patterned QD layers. Here, a specially designed nanocrystal ink is introduced, “photopatternable emissive nanocrystals” (PENs), which satisfies these requirements. Photoacid generators in the PEN inks allow photoresist-free, high-resolution optical patterning of QDs through photochemical reactions and in situ ligand exchange in QD films. Various fluorescence and electroluminescence patterns with a feature size down to ≈1.5 µm are demonstrated using red, green, and blue PEN inks. The patterned QD films maintain ≈75% of original PLQY and the electroluminescence characteristics of the patterned QLEDs are comparable to thopse of non-patterned control devices. The patterning mechanism is elucidated by in-depth investigation of the photochemical transformations of the photoacid generators and changes in the optical properties of the QDs at each patterning step. This advanced patterning method provides a new way for additive manufacturing of integrated optoelectronic devices using colloidal QDs.     

CdSe-ZnS QDs/PLGA纳米复合材料的性能及体外降解行为

采用溶液浇铸法制备了不同CdSe-ZnS量子点(Quantum dots QDs)含量的QDs/乳酸-乙醇酸共聚物(PLGA)复合材料薄膜,通过傅里叶变换红外光谱仪、透射电子显微镜(TEM)、光致发光光谱仪(PL)及紫外-可见吸收光谱仪(UV-Vis)等对薄膜的微观结构与光学性能进行了表征,并对不同降解时间后降解液的pH值、薄膜的发光情况和相对分子质量及其分布进行了测试。PL及UV-Vis结果显示,QDs/PLGA纳米复合材料的发光性能良好,吸光度随QDs含量增加而增大;TEM结果显示,QDs在基体中分散良好;在体外降解过程中,凝胶渗透色谱和缓冲液p H值测试结果说明,量子点催化了PLGA的降解;复合材料的荧光效应随着降解时间的延长逐渐减弱。以上结果说明,采用简单的溶液浇铸法制备的CdSe-ZnS QDs/PLGA复合材料发光性能稳定优异,且可以通过检测荧光效应变化以实现动态监测QDs/PLGA复合材料的降解进程。     

Stability of Quantum Dots,Quantum Dot Films,and Quantum Dot Light‐Emitting Diodes for Display Applications

Quantum dots (QDs) are being highlighted in display applications for their excellent optical properties, including tunable bandgaps, narrow emission bandwidth, and high efficiency. However, issues with their stability must be overcome to achieve the next level of development. QDs are utilized in display applications for their photoluminescence (PL) and electroluminescence. The PL characteristics of QDs are applied to display or lighting applications in the form of color‐conversion QD films, and the electroluminescence of QDs is utilized in quantum dot light‐emitting diodes (QLEDs). Studies on the stability of QDs and QD devices in display applications are reviewed herein. QDs can be degraded by oxygen, water, thermal heating, and UV exposure. Various approaches have been developed to protect QDs from degradation by controlling the composition of their shells and ligands. Phosphorescent QDs have been protected by bulky ligands, physical incorporation in polymer matrices, and covalent bonding with polymer matrices. The stability of electroluminescent QLEDs can be enhanced by using inorganic charge transport layers and by improving charge balance. As understanding of the degradation mechanisms of QDs increases and more stable QDs and display devices are developed, QDs are expected to play critical roles in advanced display applications.     

Magnetic Fields From Nuclear Polarization in Parabolic Quantum Wells

We present analytical results for the position and time dependence of dynamic nuclear polarization in parabolic quantum wells. As a result of the hyperfine interaction, induced nuclear fields in the sample can be as high as a few gauss, leading to a nuclear magnetic resonance frequency shift of the order of kilohertz. We find that the particular geometry of the parabolic quantum well permits efficient electric field control of the position dependence of the nonequilibrium magnetic field due to the nuclei.     

基于印刷量子点的多重组合信息可靠性编解码算法

目的 针对印刷量子点的点阵图像用于实现信息记录、信息隐藏和信息防伪时,存在因打印信息污损和图像识读信息误判引起的误码率高这一突出问题,设计一种信息可靠性编解码算法.方法 该算法采用二维奇偶校验码+BCH码+交织编码+帧同步组合方式.结果 经实验测试验证,该组合方式得到的印刷量子点图像与汉明码和RS编码相比,随机性更高,具有更加突出的纠错能力,信息解码识读速率更快、鲁棒性更好.结论 该算法可很好地解决印刷量子点信息的突发性错误和随机性错误,同时也解决了印刷量子点图像在信息防伪领域应用推广的瓶颈问题,扩展信息增值服务功能.     

天基光学空间目标监视信息处理技术分析

SBV是目前已成功应用于空间目标监视的典型天基光学传感器,通过被动探测空间目标反射的太阳光线辐射,完成对其探测、捕获和跟踪,并收集各种空间目标的观测数据.本文首先对SBV特点和性能进行介绍,然后以其为系统原型对天基光学空间目标监视信息处理流程和特点进行分析,提取相应关键技术,包括目标检测与恒星提取、编目维护与更新以及目标亮度特性分析等,并就其技术难点和发展趋势进行探讨.     

Quantum entanglement criteria

Abstract

We review the main criteria used to detect entanglement in quantum systems. The main properties of each criteria are summarized depending on whether the criteria provides a sufficient or necessary condition, whether it involves density matrix or operators, or if the criteria is phase sensitive. We show that several criteria have much in common and they could be related mathematically. We also discuss the features of entanglement which are useful in quantum information technology.     

Quantum memories and error correction

Quantum states are inherently fragile, making their storage a major concern for many practical applications and experimental tests of quantum mechanics. The field of quantum memories is concerned with how this storage may be achieved, covering everything from the physical systems best suited to the task to the abstract methods that may be used to increase performance. This review concerns itself with the latter, giving an overview of error correction and self-correction, and how they may be used to achieve fault-tolerant quantum computation. The planar code is presented as a concrete example, both as a quantum memory and as a framework for quantum computation.