共查询到20条相似文献,搜索用时 15 毫秒
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《Electron Device Letters, IEEE》2009,30(9):934-936
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《Electron Device Letters, IEEE》2009,30(11):1161-1163
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《Photonics Technology Letters, IEEE》2008,20(17):1485-1487
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Lin J.C. Su Y.K. Chang S.J. Lan W.H. Chen W.R. Huang K.C. Cheng Y.C. Lin W.J. 《Photonics Technology Letters, IEEE》2008,20(14):1255-1257
GaN p-i-n ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN interlayer were proposed and fabricated. It was found that the dark current of such detectors is as small as 28pA even at a high reverse bias of 40 V. Although the high potential barrier at the AlN-GaN interface would slightly reduce the responsivity of PD under low reverse biases, the high UV-to-visible rejection ratio of the PD with an LT-AlN interlayer could be achieved under high reverse biases due to its very low dark current. The rejection ratio of the PD with the LT-AlN interlayer is as large as 735 at the reverse bias of 40 V. 相似文献
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p-i-n结构GaN光电探测器性能的研究 总被引:3,自引:1,他引:3
近年来,可见盲与太阳盲光电探测器在火灾监控、太空通信和导弹尾焰探测等方面的应用引起了越来越多的关注。由于氮化镓(GaN)是直接宽带隙半导体材料,所以成为了在可见区与紫外区的光电器件的首选材料,而p-i-n结构的器件因其响应度高、暗电流低、便于集成等优点倍受人们的青睐。采用金属有机气相外延(MOCVD)法制备了p-i-n结构的GaN紫外光电探测器。在此基础上,采用N2气氛下热退火处理的方法,提高了p型GaN层的载流子浓度,从而降低了器件的暗电流。器件在1 V偏压下,暗电流仅为65 pA。器件在1 V偏压下的最大响应度值出现在361 nm处,大小为0.92 A/W。 相似文献
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Ge on Si p-i-n photodetectors with areas which are compatible with commercially available receivers have been fabricated and tested. A dark current density of 6 mA/cm2 at -1-V bias has been measured at room temperature; when heated to 85 degC, the measured dark current increases by a factor of nine. A responsivity of 0.59 A/W at 850 nm has been measured from these Ge detectors, which matches or exceeds commercially available GaAs devices. We have measured bandwidths approaching 9 GHz at -2-V bias from 50-mum diameter Ge detectors, and have observed eye diagrams comparable to those obtained from GaAs-based receivers at 4.25 Gb/s 相似文献
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Loh W.Y. Wang J. Ye J.D. Yang R. Nguyen H.S. Chua K.T. Song J.F. Loh T.H. Xiong Y.Z. Lee S.J. Yu M.B. Lo G.Q. Kwong D.L. 《Electron Device Letters, IEEE》2007,28(11):984-986
This letter reports on the impact of selective epitaxial germanium, specifically its local strain effects, on high-performance p-i-n photodetectors for near-infrared applications. By combining a thin compliant Si epitaxial layer (~6 nm) with SiGe buffer (10-15 nm), we demonstrated a high-quality Ge film (~150 nm) prepared by two-step growth. Without using high-temperature cyclic anneal, Ge films with smooth surface (root mean square = ~ 0.67 nm) and low dislocation density (4 x 106 cm-2) have been produced. The Si buffer locally enhances the tensile strain (epsiv = 0.63%) in Ge while slightly suppressing the dark current by half to 0.12 muA (with circular ring area = 1230 mum2 and spacing = 2 mum). A lateral p-i-n Ge photodetector has been demonstrated with enhanced photoresponse of ~190 mA/W at 1520 nm and a 3-dB bandwidth of 5.2 GHz at 1 V. 相似文献
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对多量子阱红外探测器制作中GaAs衬底减薄工艺程序进行了研究与讨论.通过将器件压焊封装进杜瓦瓶中,测量其室温和低温条件下,I-V特性,以及在低温条件下的器件信噪比,并以傅里叶变换红外光谱仪对器件进行光谱测量,得到光电流谱,从而比较了将器件衬底磨45.斜角的边耦合情况,以及直接将衬底减薄至(29±2)μm两种情况下器件的性能.并讨论了减薄材料在垂直入射情况下仍能引起器件光吸收的主要原因.结果表明,由于GaAs材料的各向异性,湿法腐蚀会使器件台面形成正梯形和倒梯形结构,其作用等同于器件磨至45°斜角,因此在垂直入射时器件也会有光电流产生.此外,在衬底进行减薄抛光后,衬底会有很小的起伏,这也可能引起光耦合,从而产生光电流. 相似文献
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《Lightwave Technology, Journal of》2008,26(14):2211-2214
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S. V. Kondratenko A. S. Nikolenko O. V. Vakulenko S. L. Golovinskiy Yu. N. Kozyrev M. Yu. Rubezhanskaya A. I. Vodyanitsky 《Semiconductors》2007,41(8):935-938
The spectral dependences of the lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots are studied. The photoresponse of the Ge/Si structures with Ge nanoclusters is detected in the range 1.0–1.1 eV at T = 290 K, whereas the photocurrent in the single-crystal Si substrate is found to be markedly suppressed. This result can be attributed to the effect of elastic strains induced in the structure on the optical absorption of Si. At temperatures below 120 K, the heterostructures exhibit photosensitivity in the spectral range 0.4–1.1 eV, in which the Si single crystal is transparent. The photocurrent in this range is most likely due to the transitions of holes from the ground states localized in the quantum dots to the extended states of the valence band. 相似文献
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Masini C. Calace L. Assanto G. Hsin-Chiao Luan Kimerling L.C. 《Electron Devices, IEEE Transactions on》2001,48(6):1092-1096
We have investigated the integration of Ge p-i-n and n-i-p heterojunction photodiodes on Si. Recognizing the crucial role of interface defects at the Ge-Si interface on the performance of photodetectors, we have designed and fabricated high-performance n-i-p Ge photodiodes on p+-Si substrates. These photodiodes exhibit short-circuit responsivities of 0.3 and 0.2 A/W at 1.3 and 1.55 μm, respectively, reverse dark currents of 20 mA/cm2 and response times of 800 ps 相似文献
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Spectra of lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots, fabricated by molecular-beam epitaxy are studied. The photoresponse caused by optical transitions between hole levels of quantum dots and Si electronic states was observed in the energy range of 1.1–0.3 eV at T = 78 K. It was shown that the electronic states localized in the region of Si band bending near the Ge/Si interface mainly contribute to lateral photoconductivity. The use of the quantum box model for describing hole levels of quantum dots made it possible to understand the origin of peaks observed in the photoconductivity spectra. A detailed energy-level diagram of hole levels of quantum dots and optical transitions in Ge/Si structures with strained Ge quantum dots was constructed. 相似文献
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Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers 总被引:2,自引:0,他引:2
Jungwoo Oh Campbell J.C. Thomas S.G. Bharatan S. Thoma R. Jasper C. Jones R.E. Zirkle T.E. 《Quantum Electronics, IEEE Journal of》2002,38(9):1238-1241
We report an interdigitated p-i-n photodetector fabricated on a 1-/spl mu/m-thick Ge epitaxial layer grown on a Si substrate using a 10-/spl mu/m-thick graded SiGe buffer layer. A growth rate of 45 /spl Aring//s/spl sim/60 /spl Aring//s was achieved using low-energy plasma enhanced chemical vapor deposition. The Ge epitaxial layer had a threading dislocation density of 10/sup 5/ cm/sup -2/ and a rms surface roughness of 3.28 nm. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-/spl mu/m finger width and 2-/spl mu/m spacing with a 25/spl times/28 /spl mu/m/sup 2/ active area. At a wavelength of 1.3 /spl mu/m, the bandwidth was 2.2, 3.5, and 3.8 GHz at bias voltages of -1, -3, and -5 V, respectively. The dark current was 3.2 and 5.0 /spl mu/A at -3 and -5 V, respectively. This photodetector exhibited an external quantum efficiency of 49% at a wavelength of 1.3 /spl mu/m. 相似文献
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金刚石薄膜紫外光探测器对紫外光有较高的灵敏度和良好的开关特性。本文讨论了该器件的光电流随入射光波长的变化和开关时间响应。实验证明,金刚石薄膜是一种良好的紫外光探测材料。 相似文献