Inverse‐Woodpile Photonic Band Gap Crystals with a Cubic Diamond‐like Structure Made from Single‐Crystalline Silicon

Three dimensional photonic band gap crystals with a cubic diamond‐like symmetry are fabricated. These so‐called inverse‐woodpile nanostructures consist of two perpendicular sets of pores in single‐crystal silicon wafers and are made by means of complementary metal oxide–semiconductor (CMOS)‐compatible methods. Both sets of pores have high aspect ratios and are made by deep reactive‐ion etching. The mask for the first set of pores is defined in chromium by means of deep UV scan‐and‐step technology. The mask for the second set of pores is patterned using an ion beam and carefully placed at an angle of 90° with an alignment precision of better than 30 nm. Crystals are made with pore radii between 135–186 nm with lattice parameters a = 686 and c = 488 nm such that a/c = √2; hence the structure is cubic. The crystals are characterized using scanning electron microscopy and X‐ray diffraction. By milling away slices of crystal, the pores are analyzed in detail in both directions regarding depth, radius, tapering, shape, and alignment. Using optical reflectivity it is demonstrated that the crystals have broad reflectivity peaks in the near‐infrared frequency range, which includes the telecommunication range. The strong reflectivity confirms the high quality of the photonic crystals. Furthermore the width of the reflectivity peaks agrees well with gaps in calculated photonic band structures.     

Two-Dimensional Terahertz Photonic Crystals Fabricated by Wet Chemical Etching of Silicon

The fabrication of two-dimensional terahertz photonic crystals using wet chemical etching of high-resistivity silicon is described. Wet-etched photonic crystals with a sloped sidewall were fabricated in 16 × 10 square lattices with a period of 1430 μm and a height of 150 μm, and were bonded between two parallel Au-coated silicon wafers for tight confinement in the vertical direction. The formation of a photonic band gap at a frequency of about 0.1 THz with a width of 14 GHz is demonstrated by the experimental results and the numerical simulations of the transmission frequency spectrum for the transverse magnetic mode.     

一维半导体-有机物型光子晶体的光学特性

理论上采用转移矩阵法研究了具有P30T/AIN多层膜结构的一维半导体-有机物型光子晶体的光学特性.计算结果表明:由厚度分别为30,30nm的P30T,AIN薄膜组成的多层膜结构,在中心波段为275nm处有一不完全的光子带隙存在,反射率最高可达98%;而且可以通过调整薄膜厚度、填充比等参数对光子带隙的位置、反射强度进行调制.因此,这种一维半导体一有机物型光子晶体对在紫外波段获得具有一定功能的光子晶体具有重要的指导意义.     

一维半导体-有机物型光子晶体的光学特性

理论上采用转移矩阵法研究了具有P3OT/AlN多层膜结构的一维半导体-有机物型光子晶体的光学特性. 计算结果表明：由厚度分别为30,30nm的P3OT,AlN薄膜组成的多层膜结构,在中心波段为275nm处有一不完全的光子带隙存在,反射率最高可达98%;而且可以通过调整薄膜厚度、填充比等参数对光子带隙的位置、反射强度进行调制. 因此,这种一维半导体-有机物型光子晶体对在紫外波段获得具有一定功能的光子晶体具有重要的指导意义.     

Optical study of porous silicon buried waveguides fabricated from p-type silicon

The realisation of optical buried waveguides fabricated from porous silicon layers is presented. The refractive index of porous silicon layer varies according to its porosity and its oxidisation process conditions. So either step or graded index waveguides are achieved. These waveguides are formed by a localised anodisation of heavily doped p-type silicon wafers. Measurements at a wavelength of 1.3 μm yield waveguide losses below 4 dB/cm. The waveguides are also characterised by the near-field-guided mode profile at 1.3 μm. This study deals with the modulation of the waveguiding-layer refractive index and the losses on waveguides fabricated from p⁺.     

Switching of the photonic band gap in three-dimensional film photonic crystals based on opal-VO<Subscript>2</Subscript> composites in the 1.3–1.6 μm spectral range

The parameters of three-dimensional photonic crystals based on opal-VO₂ composite films in the 1.3–1.6 μm spectral range important for practical applications (Telecom standard) are numerically calculated. For opal pores, the range of filling factors is established (0.25–0.6) wherein the composite exhibits the properties of a three-dimensional insulator photonic crystal. On the basis of the opal-VO₂ composites, three-dimensional photonic film crystals are synthesized with specified parameters that provide a maximum shift of the photonic band gap in the vicinity of the wavelength ∼1.5 μm (∼170 meV) at the semiconductor-metal transition in VO₂.     

用平面波展开法计算二维方形光子晶体的带隙结构

用平面波展开法计算二维正方晶格光子晶体的带隙结构，对二维光子晶体的电磁波理论及周期介质中的Bloch波解进行了详细的推导，得出TE模和TM模下无缺陷时光子晶体的色散曲线，并设计了低频区域内具有较大带隙宽度的两种二维光子晶体的空间周期结构. 经过大量的计算，发现硅中的空气柱型光子晶体在红外波段TE模和TM模存在重叠的绝对光子带隙，并分别研究了空气中的硅介质柱和硅中的空气柱的TM模带隙宽度随空气柱半径和填充比变化的规律.     

Enhancement of photoluminescence and raman scattering in one-dimensional photonic crystals based on porous silicon

In porous-silicon-based multilayered structures that exhibit the properties of one-dimensional photonic crystals, an increase in the photoluminescence and Raman scattering intensities is observed upon optical excitation at the wavelength 1.064 μm. When the excitation wavelength falls within the edge of the photonic band gap of the structures, a multiple increase (by a factor larger than 400) in the efficiency of Raman scattering is detected. The effect is attributed to partial localization of excitation light and, correspondingly, to the much longer time of interaction of light with the material in the structures.     

Two-dimensional photonic crystals in macroporous silicon: frommid-infrared (10 μm) to telecommunication wavelengths (1.3-1.5 μm)

We present a detailed study of two-dimensional (2D) photonic crystals based on macroporous silicon technology, showing a broad range of wavelengths accessible for applications with this material. In this work, we have reached 1.55 μm, this certainly represents a decisive issue for this technology. First, the reflection performances of a hexagonal and a triangular lattice of air holes are compared. The triangular lattice reduces technological requirements because the complete photonic bandgap (PBG) results from the overlap of broader forbidden bands of lower order. Second, a combined experimental and theoretical study is presented of the reflection properties of a 2D photonic crystal in a three-dimensional (3D) optical environment. This reveals the critical parameters that can degrade the performances of such 2-D structures. Reflection coefficients up to 98% are obtained with optical quality interfaces. Finally, a complete PBG centered at 1.55 μm is demonstrated with a submicrometer period triangular lattice defined by holographic lithography. The influence of the air filling factor on the band position and the interface quality is analyzed by reflection measurements. The overall results show the high flexibility of the macroporous silicon technology and its applicability to integrated optics at telecommunication wavelengths     

1维光子晶体的带隙研究

为了得到给定波长为通带或禁带的光子晶体,采用光学传输矩阵方法,模拟研究了由光子带隙结构如何得到相应的光子晶体结构.通过优化计算得到了指定波长带隙结构的光子晶体.结果表明,光学传输矩阵法完全能得到给定波长为通带或禁带的光子晶体.这一结果有助于光子晶体的广泛应用.     

用于波分复用的光子晶体滤波器

本文从光子晶体的光子频率禁带特性出发，提出了用2个或以上的均匀周期结构光子晶体叠加在一起，形成叠层结构光子晶体，以获得窄带滤波特性的设想；利用光学传输矩阵法对这种结构进行了数值计算，结果证实了构思的正确性；设计了信道间隔为8nm的8信道波分复用（WDM）和信道间隔0.8nm的8信道密集波分复用（DWDM）光子晶体滤波器。     

完全禁带二维光子晶体的研究

利用平面波展开法,对存在完全禁带的正三角排列的气柱型二维光子晶体和蜂窝状排列的介质柱型二维光子晶体进行了研究,分析了柱的半径和介质折射率对完全禁带大小的影响,结果表明,正三角排列气柱型比蜂窝状排列介质柱型具有更大的最大带隙率,而且最大带隙率还可以通过介质折射率的改变来优化;蜂窝状排列介质柱型二维光子晶体最容易加工的结构刚好适合常见材料硅或砷化镓,具有更大的实用价值.     

二维硅基三角形气孔光子晶体的带隙分析

研究了以硅为背景介质周期性排列的等边三角形气孔构成的三角晶格二维光子晶体,把平面波展开法用于光子晶体能带结构的数值研究,分别改变等边三角形气孔边长、晶格常数和晶格基元旋转角度,研究带隙变化规律。研究结果表明:三角形气孔边长、晶格常数和晶格基元旋转角度的适当改变可以使光子晶体出现完全带隙,优化结构参数给出了一个完全带隙。     

Fabrication of Silicon Inverse Woodpile Photonic Crystals

Silicon inverse woodpile photonic crystals are fabricated for the first time. Our approach, which is based on direct laser writing of polymeric templates and a novel silicon single‐inversion procedure, leads to high‐quality structures with gap/midgap ratios of 14.2 %, centered at a wavelength of 2.5 μm. It is shown that gap/midgap ratios as large as 20.5 %, centered at 1.55 μm, may become possible in the future.     

Fabrication and enhanced field emission properties of novel silicon nanostructures

We reported the fabrication and the field emission properties of two-tier novel silicon nanostructures. First, silicon nanopillars with ordered high aspect ratio were achieved by using conventional lithographic techniques to act as the field emission sources. Second, sharp-edged well-aligned silicon nanograss was fabricated on top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission characteristics. The turn-on fields were obtained as 10.5 and 14.4 V/μm under current density of 0.01 mA/cm² for two-tier patterns separated by respective 5 μm and 2 μm spaces. The excellent field emission property from these novel nanostructures exhibited a great potential as high-performance field emitter arrays towards future nanoelectronic devices.     

硅树脂调制的可调光子晶体

文章提出一种利用硅树脂调节光子晶体光子带隙的方法,光子晶体波导是通过往二维正方形光子晶体的介质柱之间填充硅树脂得到的,利用温度场改变硅树脂的折射率.数值模拟结果表明:通过温度场可对这种光子晶体的禁带结构进行调节.这种可调光子晶体可应用于制作新颖的偏光片和光开关.     

倾斜底涂法制备聚苯乙烯胶体晶体及其光学特性研究

采用倾斜底涂法将单分散的聚苯乙烯胶体微球自组装生长成为胶体晶体,并用扫描电子显微镜和紫外-可见光分光光度计对其形貌和光学特性进行测量。结果表明,聚苯乙烯微球自组装为面心立方密堆积结构,胶体晶体的光子带隙位于可见光波段。分别对不同胶体颗粒的粒径、悬浮液的浓度、基片倾斜角度及环境温度等制备条件下生成的聚苯乙烯光子晶体样品逐一分类对比,分析了影响光子带隙宽度和深度的因素。     

二氧化硅介质柱构成的8重准晶结构光子晶体的传输特性

采用时域有限差分法讨论了由二氧化硅介质柱构成的8重准晶结构光子晶体的带隙特性。数值模拟结果表明,该结构的光子晶体对TM模存在较宽的光子带隙,而对TE模不存在光子带隙;光子带隙的中心频率随着填充因子的增大向低频方向移动;相对带隙宽度随着填充因子的增大呈现先增大后减小的趋势,并在填充因子r/a为0.29时存在最大值,该带隙可以覆盖1.55μm附近44nm的宽度或1.31μm附近37nm的宽度,足以用于设计和制作准晶结构的光子晶体光纤等光通信器件;光子带隙的位置和宽度均与入射光的方向无关,带隙的这种各向同性使基于该结构的新型器件的制作有更大的设计自由度。     

太赫兹波在二维三角晶格光子晶体中的传播特性

用平面波展开法研究了太赫兹波在二维三角晶格光子晶体中的传播特性。数值计算了以硅为背景的空气圆柱构成的二维三角晶格光子晶体的能带结构和态密度,计算表明r=0.50a和r=0.46a时,E偏振和H偏振分别出现最大光子带隙,带隙宽度分别0.1097THz和0.1935THz,在r=0.48a出现最大完全光子带隙,带隙宽度为0.0759THz,光子晶体态密度的分布也表明了存在光子带隙的范围,研究结果为太赫兹器件的开发提供了理论依据。     

Controlling resist thickness and etch depth for fabrication of 3D structures in electron-beam grayscale lithography

In many applications such as optoelectronic devices, three-dimensional (3D) structures are required. Examples include photonic band gap (PBG) crystals, diffractive optical elements, blazed gratings, MEMS, NEMS, etc. It is known that the performance characteristics of such structures are highly sensitive to their dimensional fidelity. Therefore, it is essential to have a fabrication process by which such 3D structures can be realized with high dimensional accuracy. In this paper, practical methods to control thickness of the remaining resist and etch depth, which may be employed for fabrication of such 3D structures using grayscale electron-beam lithography, are described. Through experiments, explicit control of the remaining resist thickness and etch depth at the resolution of 20 nm for the feature sizes of 0.5 μm and 1 μm has been successfully demonstrated. Also, the 1:1 ratio of silicon to resist etching rates was achieved for transferring the remaining resist profile onto the silicon substrate.