共查询到18条相似文献,搜索用时 93 毫秒
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在LSS(liquid-solid-solution)多相体系中制得了CdSe、CdSe/ZnS量子点和Eu掺杂的量子点。利用TEM、XRD、PL、EDS对产物进行了表征。TEM结果显示所得的量子点形貌规则、尺寸均匀。XRD结果显示CdSe/ZnS量子点呈六方晶系。PL结果对比表明,合适厚度壳层ZnS包覆后的CdSe量子点发光效率明显提高,发光峰的半高宽有大幅度提高,并分析了所得的结果。掺杂稀土元素Eu后,CdSe(Eu)量子点在红光区域产生了新的发光峰;而CdSe(Eu)/ZnS量子点在红光区域内没有出现发光峰,并阐明了这种现象的原因。 相似文献
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以三维锐钛矿TiO2微球为上层光散射层材料, 以商业纳米TiO2为下层连接材料, 采用刮刀法制备了一种新颖的双层TiO2薄膜, 并应用于量子点敏化太阳能电池(QDSSC)。其中, 石墨烯量子点(GQDs)采用滴液法引入, CdS/CdSe量子点采用连续离子层吸附法(SILAR)制备。采用场发射扫描电镜、透射电镜、X射线衍射、紫外-可见漫反射光谱及荧光光谱对样品进行表征。实验还制备了CdS/CdSe量子点敏化及石墨烯量子点/CdS/CdSe共敏化太阳能电池, 并研究了石墨烯量子点及CdS不同敏化周期及对电池性能影响。研究结果表明, 石墨烯量子点及CdS不同敏化周期对薄膜的光学性质、电子传输及载流子复合均有较大影响。优选条件下, TiO2/QGDs/CdS(4)/CdSe电池的光电转换效率为1.24%, 光电流密度为9.47 mA/cm2, 显著高于TiO2/CdS(4)/CdSe电池的这些参数(0.59%与6.22 mA/cm2)。这主要是由于TiO2表层吸附石墨烯量子点后增强了电子的传输, 减少了载流子的复合。 相似文献
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CdSe胶质量子点的电致发光特性研究 总被引:3,自引:0,他引:3
采用胶体化学法合成硒化镉(CdSe)胶质量子点, 在此基础上制成了以CdSe胶质量子点为有源层, 结构为ITO/ZnS/CdSe/ZnS/Al的电致发光(EL)器件. 透射电镜测量表明量子点的尺寸为4.3 nm, 扫描电子显微镜测量ZnS薄膜和Al薄膜结果显示表面均较为平整, 由器件结构的X射线衍射分析观察到了CdSe(111)、ZnS(111)等晶面的衍射, 表明器件中包含了CdSe量子点和ZnS绝缘层材料. 光致发光谱表征胶质量子点的室温发光峰位于614 nm, 电致发光测量得到器件在室温下的发光波长位于450 ~ 850 nm, 峰值在800 nm附近. 本文对电致发光机制及其与光致发光谱的区别进行了讨论. 相似文献
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《中国测试》2017,(11):51-58
量子点是一种新型荧光纳米材料,具有独特而优良的荧光性质,近年来受到研究者的广泛关注。文章综述蛋白质、抗体、肽类以及DNA等对CdSe量子点(CdSe QDs)的表面功能化作用,以及CdSe QDs在生物传感分析中的重要研究进展。具体介绍CdSe量子点的多种合成方法(包括有机相合成、水相合成等),蛋白质、抗体、肽类、DNA利用共价键或静电作用对CdSe量子点修饰方法,以及其在生物医学标记与成像、生物传感、药物载送以及癌症治疗等领域的相关应用,最后针对现有研究的不足进行展望。希望通过对CdSe量子点全方位总结与概述,在一定程度上帮助科研工作者快速、准确了解其相关性质与研究进展。 相似文献
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量子点是一种具有量子限域效应的半导体纳米晶,近年来,以其优异的光电特性得到了广泛关注。量子点具有发光效率高、发光波长可调、发光半峰宽窄、可溶液法低成本制备等优势,已被大量应用于显示领域,成为了新型显示的核心材料之一。微显示技术一般应用于有效显示区域对角线长度小于1 inch的近眼显示场景中,近年来虚拟现实、增强现实等近眼显示场景的兴起,对高亮度、高像素密度、全彩色的微显示技术提出了更高的要求。本文将从量子点应用于高亮度、高像素密度的全彩微显示技术的角度出发,从光致发光和电致发光两条技术路线对现有的进展进行回顾和总结,最后对量子点应用于微显示技术面临的机遇和挑战进行展望。 相似文献
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采用电泳沉积技术,在预处理好的片上交替沉积表面带正负电荷的CdSe薄膜,扫描电子显微镜、原子力显微镜和紫外一可见光谱的表征分析表明,薄膜中粒子排布紧密平整、粒径大小均匀、颗粒粒径在60-100nm范围,构成的type—II型半导体材料发生电子空穴分离,量子点的荧光发射强度减小。 相似文献
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A. Högele S. Seidl M. Kroner K. Karrai R. J. Warburton M. Atatüre J. Dreiser A. Imamolu B. D. Gerardot P. M. Petroff 《Journal of Superconductivity》2005,18(2):245-249
The ground state of neutral and negatively charged excitons confined to a single self-assembled InGaAs quantum dot is probed in a direct absorption experiment by high resolution laser spectroscopy. We show how the anisotropic electron-hole exchange interaction depends on the exciton charge and demonstrate how the interaction can be switched on and off with a small dc voltage. Furthermore, we report polarization sensitive analysis of the excitonic interband transition in a single quantum dot as a function of charge with and without magnetic field. 相似文献
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Hyungsuk Moon Changmin Lee Woosuk Lee Jungwoo Kim Heeyeop Chae 《Advanced materials (Deerfield Beach, Fla.)》2019,31(34)
Quantum dots (QDs) are being highlighted in display applications for their excellent optical properties, including tunable bandgaps, narrow emission bandwidth, and high efficiency. However, issues with their stability must be overcome to achieve the next level of development. QDs are utilized in display applications for their photoluminescence (PL) and electroluminescence. The PL characteristics of QDs are applied to display or lighting applications in the form of color‐conversion QD films, and the electroluminescence of QDs is utilized in quantum dot light‐emitting diodes (QLEDs). Studies on the stability of QDs and QD devices in display applications are reviewed herein. QDs can be degraded by oxygen, water, thermal heating, and UV exposure. Various approaches have been developed to protect QDs from degradation by controlling the composition of their shells and ligands. Phosphorescent QDs have been protected by bulky ligands, physical incorporation in polymer matrices, and covalent bonding with polymer matrices. The stability of electroluminescent QLEDs can be enhanced by using inorganic charge transport layers and by improving charge balance. As understanding of the degradation mechanisms of QDs increases and more stable QDs and display devices are developed, QDs are expected to play critical roles in advanced display applications. 相似文献
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目的 为了通过喷墨打印技术很好地实现量子点薄膜图案化,需要调节量子点薄膜制备工艺的各项参数以获得表面均匀、厚度适宜和无咖啡环结构的量子点薄膜。方法 基板和退火是影响量子点薄膜成膜性能的2个重要参数,分别研究基板的清洗、材料和温度以及退火的温度和时间对喷墨打印量子点薄膜成膜性能的影响。结果 选择3种不同类型的溶剂依次清洗可提高基板表面能,有利于墨水的铺展;PVK基板的量子点面薄膜形貌相较于Pedot:Pss更均匀;当基板温度为50 ℃、退火温度为80 ℃或90 ℃、退火时间为15 min时,咖啡环效应最弱,可获得表面均匀、厚度适宜和无咖啡环结构的量子点薄膜。结论 基板的清洗、自身材料以及温度都会影响墨水的铺展性能,从而影响量子点薄膜的成膜性能;控制退火温度与退火时间,以使马兰戈尼流起作用,咖啡环效应被明显抑制,可以获得表面均匀的量子点薄膜。 相似文献
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Seungjun Choo Hyeong Woo Ban Da Hwi Gu Hyewon Jeong Seungki Jo Seongheon Baek Wook Jo Jae Sung Son 《Small (Weinheim an der Bergstrasse, Germany)》2019,15(5)
Porous semiconductors attract great interest due to their unique structural characteristics of high surface area as well as their intrinsic optical and electronic properties. In this study, synthesis of inorganic–organic 2D CdSe slabs‐diaminooctane (DAO) porous quantum net structures is demonstrated. It is found that the hybrid 2D CdSe‐DAO lamellar structures are disintegrated into porous net structures, maintaining an ultrathin thickness of ≈1 nm in CdSe slabs. Furthermore, the CdSe slabs in quantum nets show the highly shifted excitonic transition in the absorption spectrum, demonstrating their strongly confined electronic structures. The possible formation mechanism of this porous structure is investigated with the control experiments of the synthesis using n‐alkyldiamines with various hydrocarbon chain lengths and ligand exchange of DAO with oleylamine. It is suggested that a strong van der Waals interaction among long chain DAO may exert strong tensile stress on the CdSe slabs, eventually disintegrating slabs. The thermal decomposition of CdSe‐DAO quantum nets is further studied to form well‐defined CdSe nanorods. It is believed that the current CdSe‐DAO quantum nets will offer a new type of porous semiconductors nanostructures under a strong quantum‐confinement regime, which can be applied to various technological areas of catalysts, electronics, and optoelectronics. 相似文献