陕西省金堆城钼矿床碲、铋矿物的赋存状态 及其地质意义

本文利用电子探针微束分析技术,对陕西省华县金堆城斑岩型钼矿床中产出的矿物组成及赋存状态进行了较为系统的研究,经研究发现,矿床中有较多碲、铋矿物的存在.主要包括:碲银矿、针硫铋铅矿、含硫铋铅银矿及含铋、银-方铅矿.碲银矿主要呈半自形粒状,与针硫铋铅、含硫铋铅银矿及含铋、银-方铅矿共生并被黄铁矿所包裹;针硫铋铅矿呈自形粒状被黄铁矿包裹并与黄铜矿、碲银矿等矿物共生;含硫铋铅银矿有两种不同的产出状态:第一,以自形粒状形态与黄铜矿、闪锌矿及碲银矿共生形成复杂共生体.第二,以较小的颗粒被黄铁矿包裹,含铋、银-方铅矿呈自形-半自形粒状与黄铜矿、闪锌矿、碲银矿及含硫铋铅银矿密切共生.其中,碲银矿的出现暗示了成矿流体是幔源成因;含铋、银-方铅矿从核部到边部Ag、Bi的含量有逐渐上升,而Pb的含量有逐渐下降的趋势,反映出了其晶格中发生了Ag+、Bi3+替代Pb2+的作用.     

电子探针在冀东峪耳崖金矿载金矿物研究中的应用

利用电子探针对矿相显微镜下难以分辨的矿物颗粒进行了微区图像及成分分析。峪耳崖金矿中的载金矿物为黄铁矿、碲铋矿。碲铋矿为本次工作中重点研究的载金矿物。根据矿物组合及矿物形成温度把碲铋矿分为早晚两期。碲铋矿多呈他形粒状,从早期到晚期碲铋矿中Fe元素含量降低而Te、Bi、Ag元素含量升高。利用背散射电子像可清晰地看到碲铋矿中包裹银金矿。通过比较碲铋矿中金的含量与黄铁矿中金的含量,看出碲铋矿中金的含量略高于黄铁矿中金的含量,可将碲铋矿作为找矿标志之一。     

银掺杂氧化亚铜薄膜的制备及其光电性能

采用水热法以Cu片为基底,Cu(NO_3)_2为铜源,十二烷基苯磺酸钠(SDBS)为添加剂,通过调节Ag^+浓度,制备不同Ag掺杂Cu_2O(Ag/Cu_2O)薄膜。研究了样品的光电性能及电容-电压特性等,并用X射线衍射(XRD)、扫描电子显微镜(SEM)和能谱仪(EDS)对其晶体结构、形貌及组成进行了表征。结果表明,当体系中Ag^+浓度为0.03 mmol/L时,Ag/Cu_2O薄膜的光电性能最佳,光电压和光电流密度分别为0.458 5 V和3.011 mA·cm^-2,比Cu_2O薄膜分别提高了0.205 1 V和1.359 mA·cm^-2;Ag/Cu_2O薄膜的载流子浓度达到3.10×10²⁰ cm^-3,比Cu_2O薄膜提高了2.38×10²⁰ cm^-3。XRD,SEM和EDS结果显示,Ag/Cu_2O薄膜的结晶性比Cu_2O薄膜好,但其粒径有所增大,Ag/Cu_2O薄膜中Ag元素的原子数分数为0.13%。     

应用LIBS技术定量检测湖水样品中的铜

为了对湖水中的铜元素含量进行定性分析及定量检测,实验采用了激光诱导击穿光谱(LIBS)技术,进行了理论分析和实验验证。以120mJ激光能量值,1.28μs延时时间和1Hz重复频率,测定了Cu元素浓度在2～75mg/L区域内变化时324.75nm谱线的强度值。对Cu元素的特征谱线进行了定性分析;建立了Cu元素浓度与谱线强度的定标曲线,该定标曲线线性拟合相关度R2=0.99;通过检测限公式得到铜元素的检测限为7.37mg/L。采用该定标曲线对湖水中的Cu元素含量进行了定量检测,得到湖水中Cu元素浓度为10mg/L。实验表明,采用LIBS方法可对水溶液中重金属元素铜进行快速检测。     

铁基非晶软磁合金的制备及磁性能研究

研究了铁基非晶(Fe1–xCox)78.4Nb2.6Si9.0B9.0Cu1.0(x=0,0.15,0.35,0.55或0.75)软磁合金的制备工艺及磁性能。结果表明:采用熔体快淬法制备的非晶薄带宽约3mm,厚20～40μm;最佳工艺参数为铜轮转速35m/s,熔体射流压力0.14MPa;借XRD分析了合金的相结构,发现合金薄带为非晶态;通过振动样品磁强计(VSM)测量了磁性能,其Bs大于1.00T,Hc为2.31～5.17kA/m。用畴壁钉扎效应分析了Hc偏高的原因。     

接触电极功函数对反式锡基钙钛矿太阳能电池性能的影响

因反式锡基钙钛矿太阳能电池可避免J-V迟滞以及铅元素,基于SCAPS-1D设计结构为ITO/HTL/CH3NH3SnI3/PCBM/back-contact的反式锡基钙钛矿太阳能电池器件.其中NiO、Cu2O以及P3HT分别作为空穴传输层,探讨导电玻璃ITO功函数在4.6?5.0 eV范围内电池性能的变化,并分析Al、...     

Purification of CdTe from,tellurium-rich solutions

Cadmium telluride was grown from tellurium-rich solutions from 600 ‡C to 900 ‡C. Significant purification occurred during growth. Impurities were intentionally-incorporated into the starting materials and the segregation coefficients were measured. Values at 880 ‡C were Hg - 0.3, Zn - 4, S - 4, Se - 2, O ≈0.02, In - 0.06, Al ≈ 0.1, B <1, Tl <0.01, Co - 0.03, Au - 0.1, Ag - 0. 009, Li - 0. 3, Na ≈0.01, K ≈0. 01, Cl ≈0.005, I <0. 5, Pb < 0.005, C ≈0. 5, N ≈0.4, Bi < 0.001, Mg - 1.5, Pt < 0.01, Cr < 1. Supported in part by the AEC, Division of Applied Technology, and ARPA.     

Investigation on doping behavior of copper in ZnO thin film

An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL). Cu atoms showed different behaviors in the ZnO matrix as a function of oxygen gas pressure. Metallic copper (Cu⁰)-related Cu 2p_3/2 peak was observed in highly n-type ZnO:Cu film deposited in 10 mTorr. In the Cu-doped p-type ZnO film prepared in 50 mTorr, Cu_Zn¹⁺-related peak and small Cu_Zn²⁺-related satellite peak exhibited and the optical acceptor binding energies of Cu3d⁹ and Cu3d¹⁰ were 173 and 213 meV, respectively.     

Fabrication of high aspect ratio copper nanowires using supercritical CO2 fluids electroplating technique in AAO template

This study utilizes the supercritical and post-supercritical electroplating technique, to fabricate copper nano-wires inside ultra-high aspect ratio Anodic Aluminum Oxide templates (AAO templates). Comparisons of the electroplating capabilities and results were made between these methods and the more common traditional electroplating techniques. Under identical experimental conditions and on ultra-high aspect ratio AAO template with thickness of 60 µm (aspect ratio of 1:490), it is evident from the results that the supercritical electroplating process has the fastest electroplating velocity of the three processes (~1.33 µm/min), followed by post-supercritical electroplating (~1 µm/min) and traditional electroplating is the slowest (~0.67 µm/min). This study also discusses the electroplating quality of the copper nano-wires. Samples were sliced along the cross-section, and Field Emission Scanning Electron Microscopy (FESEM) was utilized to observe the copper nano-wires. X-Ray Diffraction (XRD) was used to observe that the crystal structures is polycrystalline, and with the use of equations it is determined that grain size will not be severely affected by changes in current density and supercritical pressure in themselves, but instead the different processes do produce an evident change. The grain size achieved with supercritical electroplating is the smallest, followed by the post-supercritical electroplating, and the largest was given by the traditional electroplating process. Through these results it can be proved that supercritical electroplating process indeed provides grain refinement capabilities. The supercritical fluid-enabled electroplating process utilized for these experiments does not need addition of any surfactants to aid filling of the structures, but only relies on the intrinsic properties of supercritical fluids to achieve complete filling of nano-holes, and because there are no surfactants, we can achieve higher degree of purity in the copper nano-wires.     

Intermetallic Reaction of Indium and Silver in an Electroplating Process

The reaction of indium (In) and silver (Ag) during the electroplating process of indium over a thick silver layer was investigated. It was found that the plated In atoms react with Ag to form AgIn₂ intermetallic compounds at room temperature. Indium is commonly used in the electronics industry to bond delicate devices due to its low yield strength and low melting temperature. In this study, copper (Cu) substrates were electroplated with a 60-μm-thick Ag layer, followed by electroplating an In layer with a thickness of 5 μm or 10 μm, at room temperature. To investigate the chemical reaction between In and Ag, the microstructure and composition on the surface and the cross section of samples were observed by scanning electron microscopy (SEM) with energy-dispersive x-ray spectroscopy (EDX). The x-ray diffraction method (XRD) was also employed for phase identification. It was clear that indium atoms reacted with underlying Ag to form AgIn₂ during the plating process. After the sample was stored at room temperature in air for 1 day, AgIn₂ grew to 5 μm in thickness. With longer storage time, AgIn₂ continued to grow until all indium atoms were consumed. The indium layer, thus, disappeared and could barely be detected by XRD. Jong S. Kim now with Applied Materials.     

High Thermoelectric Performance in Sulfide‐Type Argyrodites Compound Ag8Sn(S1−xSex)6 Enabled by Ultralow Lattice Thermal Conductivity and Extended Cubic Phase Regime

Argyrodites with a general chemical formula of A₈BC₆ are known for complex phase transitions, ultralow lattice thermal conductivity, and mixed electronic and ionic conduction. The coexistence of ionic conduction and promising thermoelectric performance have recently been reported in selenide and telluride argyrodites, but scarcely in sulfide argyrodites. Here, the thermoelectric properties of Ag₈Sn(S_1?xSe_x)₆ are reported. Specifically, Ag₈SnS₆ exhibits intrinsically ultralow lattice thermal conductivities of 0.61–0.31 W m^?1 K^?1 over the whole temperature range from 32 to 773 K due to distorted local crystal structure, relatively weak chemical bonding, rattler‐like Ag atoms, low‐lying optical modes, and dynamic disorder of Ag ions at high temperatures. Se doping shifts the orthorhombic–cubic phase transition from 457 K at x = 0 to 430 K at x = 0.10, thereby expanding the temperature range of the thermoelectrically favored cubic phase. A figure of merit zT value ≈ 0.80 is achieved at 773 K in Ag₈Sn(S_1?xSe_x)₆ (x = 0.03), the highest zT value reported in sulfide argyrodites. These results fill a knowledge gap of the thermoelectric study of argyrodites and contribute to a comprehensive understanding of the chemical bonding, lattice dynamics, and thermal transport of argyrodites.