透射电镜电子染色方法的改良

为提高透射电镜生物样品超薄切片的染色效率,在传统染色方法基础上进行改良,使用自制染色装置,在较短时间内完成大批生物样品超薄切片的电子染色。与传统方法相比较省时省药,减少污染机率,电镜观察的超微结构清晰,反差较好。     

一种简易的超薄切片染色器

本文介绍了一种简易的超薄切片染色器的制作和使用方法。各实验室都有制作比染色器所需的材料,其制作和使用方法简单。可进行铀、铅单、双重染色。染色效果良好。在透射电镜生物样品超薄切片染色(尤其铅染)过程中,往往由于CO_2的影响,常在超薄切片上产生碳酸铅沉淀,使切片受到污染,影响观察,严重时无法观察使之前功尽弃。我们参考LKB2160型染色机的工作原理和染色过程,结合工作中的实践,自制了一种简易的染色器,可进行铀、铅单、双重染色。使用此染色器,可使超薄切片的染色达到防污染、规格化、省时间的效果。现将其制作及使用方法介绍如下:     

一种用硅橡胶载网夹进行超薄切片染色的有效方法

本文介绍了一种能减少污染、省时省力的电镜超薄切片染色方法。     

提高电镜超薄切片染色效率的自制装置

用传统的方法进行透射电镜超薄切片染色费时费工,且易造成污染,本文介绍一种自制的染色装置能很好地解决这一问题,提高染色效率,不同生物样品的超微结构保存良好、清晰.     

透射电镜超薄切片滴管式染色法的改进

在应用透射电镜超薄切片滴管式染色法的基础上,对其进行了一些改进,使其操作更为方便高效,在避免染色操作中铅污染的同时也很好地避免了铀污染,取得了比较好的效果。     

电镜超薄切片批量染色的载网固定装置改进与应用

电镜图像对生物组织、细胞形态结构的研究具有重要作用,高质量的超薄切片染色在透射电镜样本制备中起着关键作用.本文介绍了针对目前用于批量染色的载网固定方式存在的超薄切片甚至载网脱落等问题,对载网固定装置和技术进行了改进,从而明显地提高了批量染色的工作质量和效率.     

脾气虚证骨骼肌线粒体超微结构图像分析研究

脾气虚证大白鼠骨骼肌的超微结构变化已作了观察研究,发现线粒体数显著减少,其结构改变表现为肿胀、嵴断裂、空泡化等。本文对线粒体的超微结构作进一步图像分析。实验动物Wistar大白鼠,取正常组、脾气虚证组、四君子汤复健组和自然恢复组的骨骼肌用4％戊二醛固定液作前固定,1％四氧化锇固定液后固定,Epon 812包埋。LKB V型超薄切片机切半薄和超薄切片,半薄切片作光学显微镜观察和修块定位,超薄切片用醋酸铀、柠檬酸铅双重染色,日立H-500透射电镜观察照相,Joyce-Loebl μMAGISCAN图像分析仪对四个组线粒体的面积、周长、长度、宽度(见图1)以及长度与宽度之比进行测定、统计分析,对四个组的上述参数分别作t测验。     

基于Ansys/Flotran的夹持型超薄切片染色板优化设计

电镜超薄切片样品制备中,重金属染色是不可缺少的关键步骤.本文基于夹持型超薄切片染色板工作原理,建立4种不同染色孔形状的染色板模型(染色孔底部与侧壁夹角90°,105°,120°和135°),对水流冲洗染色板过程进行二维模拟,采用Ansys/Flotran方法计算超薄切片表面的实际冲洗液流速度和湍流动能.结果表明,随着染色孔底部与侧壁夹角的增加,超薄切片表面的水流冲洗速度逐渐增加,且不同染色孔内的湍流动能逐渐变得均匀,在染色孔的壁与底面的夹角为105°时,湍流动能最大,即水流与超薄切片表面残余的重金属染液之间交换程度最大,此结构被确定为最优化设计.根据计算流体动力学研制的产品,操作简便、安全有效,为提高透射电镜的样品染色效率和质量提供理论基础.     

微波辐射超薄切片快速染色法

本文介绍一个微波辐射超薄切片快速染色法。该方法与常规染色方法相比具有以下突出优点:染色速度快且操作简便,整个染色过程可在数分钟内完成;经微波辐射染色处理的动植物组织切片染色均匀,污染少,反差比常规染色法稍强。动植物组织切片微波辐射染色的最佳辐射时间有所不同,铀染色动植物组织切片最佳辐射时间均为30秒;铅染色动物组织切片最佳辐射时间为30秒,而植物组织切片为20秒。染色液经微波辐射后的温度应控制在20～40℃。     

一种减少超薄切片污染的简单方法

电镜的超薄切片在染色过程中的污染是很难避免的，用传统的染色方法进行染色，操作麻烦且易污染，虽然现在有报道介绍各种避免切片污染的染色方法，但操作程序大都比较复杂，我们经过多次试验，认为采用以下方法可以基本上避免污染，且操作程序简单方便，染色效果也有了很大提高，方法如下。     

聚焦离子束致形变微纳加工研究进展

聚焦离子束技术（ focused ion beam,FIB）由于其高精度刻蚀、定点加工、实时成像等优势,常用于精密加工、TEM制样等领域。其工作机理通常为：刻蚀、淀积与成像。而基于FIB新的加工手段正在被探索和研究,其中就包括两种聚焦离子束致形变技术,分别为聚焦离子束应力引入致形变技术（ FIB?stress induced deformation,FIB?SID）和聚焦离子束物质再分布致形变技术（ FIB?material?redistribution induced deformation,FIB?MRD）。前者通过控制FIB辐照时离子注入与溅射之间的竞争关系实现悬臂梁的多角度弯曲,后者利用粒子与物质作用时的瑞利不稳定性构建纳米结构,在一定意义上扩充了聚焦离子束的应用范围。运用上述方法可以加工三维微纳螺旋,悬浮光滑纳米弦以及大规模阵列化纳米网孔等多样化微／纳功能构件,在微流控系统,太赫兹通信,光学天线等领域具有很强的应用前景。     

A review: Thermal processing in fast ramp furnaces

The capabilities and advantages of advanced batch furnaces in meeting semiconductor process requirements (up to a minimum of 100 nm technology node) are reviewed. Hot wall batch furnaces continue to provide accurate temperature control, low cost of ownership, and process advantages as compared to single-wafer tools. Recent advances by various furnace vendors have addressed the hot-walled furnace shortcomings of thermal response, process times, and automation overload, resulting in improved manufacturing economics. The inherent benefits such as large load size, isothermal processing, uniform film growth, high reliability, and low capital cost have ensured a substantial cost of ownership advantage over single-wafer processes. Accurate temperature modulation at high temperatures during both heating and cooling cycles has allowed synthesis of ultra thin gate oxides for devices below sub-200 nm design rule.     

超薄铜箔在HDI的应用

本文详细介绍了超薄铜箔的结构和制造方法，并对两种结构的超薄铜箔在HDI线路板的应用作了对比，研究了蚀刻速率和剥离强度特性以及图形电镀、激光钻孔的工艺，为超薄铜箔的实际应用提供了可靠的依据。     

Automated,Ultra‐Fast Laser‐Drilling of Nanometer Scale Pores and Nanopore Arrays in Aqueous Solutions

The ability to quickly and reliably fabricate nanoscale pore arrays in ultra‐thin membranes such as silicon nitride (Si_xN) is extremely important for the growing field of nanopore biosensing. Laser‐based etching of thin Si_xN membranes immersed in aqueous solutions has recently been demonstrated as a method to produce stable functional pores. Herein, the principal mechanism governing material etching and pore formation using light is investigated. It is found that the process is extremely sensitive to the relative content of Si over N atoms in the amorphous membrane, produced by chemical vapor deposition. Commonly, Si_xN membranes are made to be Si‐rich to increase their mechanical stability, which substantially reduces the material's bandgap and increases the density of Si‐dangling bonds. Hence, even minimal batch‐to‐batch variation may lead to remarkably different etch rates. It is shown that higher Si content results in orders of magnitude faster etching rates. This rate is further accelerated in an alkaline environment allowing on‐demand controlled nanopore formation in about 10 s time even at low laser radiation intensities. These results highlight that photoactivation of the Si_xN by the incident beam is critical to the chemical etching process and can be used to readily produce nanopore arrays at any specific location.     

Flexible and Semi‐Transparent Ultra‐Thin CIGSe Solar Cells Prepared on Ultra‐Thin Glass Substrate: A Key to Flexible Bifacial Photovoltaic Applications

For applications to semi‐transparent and/or bifacial solar cells in building‐integrated photovoltaics and building‐applied photovoltaics, studies are underway to reduce the processing cost and time by decreasing the thickness of Cu(In_1?x,Ga_x)Se₂ (CIGSe) absorber to the ultra‐thin scale (≤500 nm). To dynamically and affordably meet the growing demand for electric power, daylighting, and architectural aesthetics of buildings in urban area, flexible semi‐transparent ultra‐thin (F‐STUT) CIGSe solar cells are proposed on flexible ultra‐thin glass (UTG) and compared with rigid semi‐transparent ultra‐thin (STUT) CIGSe solar cells fabricated on soda‐lime glass (SLG). At all the tested deposition temperatures of CIGSe, the F‐STUT CIGSe solar cells exhibit superior performance compared to the rigid STUT CIGSe solar cells. Furthermore, through realistic measurement under ≈1.3‐sun illumination, maximum bifacial power conversion efficiency of 11.90% and 13.23% are obtained for SLG and UTG, respectively. The major advantages of using UTG instead of SLG are not only the intrinsic characteristics of UTG, such as flexibility and high transmittance, but also collateral benefits such as the larger CIGSe grain size at the deposition temperature, better CIGSe crystalline quality, more precise controllability of the alkali element, and reduced thickness of the interfacial GaO_x layer, which enhance the photovoltaic parameters.     

P2P Ranging‐Based Cooperative Localization Method for a Cluster of Mobile Nodes Containing IR‐UWB PHY

The problem of pedestrian localization using mobile nodes containing impulse radio ultra wideband (IR‐UWB) is considered. IEEE 802.15.4a‐based IR‐UWB can achieve accurate ranging. However, the coverage is as short as 30 m, owing to the restricted transmit power. This factor may cause a poor geometric relationship among the mobile nodes and anchor nodes in certain environments. To localize a group of pedestrians accurately, an enhanced cooperative localization method is proposed. We describe a sequential algorithm and define problems that may occur in the implementation of the algorithm. To solve these problems, a batch algorithm is proposed. The batch algorithm can be carried out after performing the sequential algorithm to linearize the nonlinear range equation. When a sequential algorithm cannot be performed due to a poor geometric relationship among nodes, a batch algorithm can be carried out directly. Herein, Monte Carlo simulations are presented to illustrate the proposed method and verify its performance.     

家兔骨骼肌样品染色技术的改进

采用常规染色方法所制备的家兔骨骼肌样品,其图像中易出现小黑斑。本文在常规染色方法基础上进行改良,有效减少了黑斑的出现,其超微结构清晰,反差也有所增强。     

超薄氧化层制备及其可靠性研究

文章简述了超薄氧化层SiO2,的击穿机理,采用了恒定电流法表征超薄氧化层TDDB效应,并研究了清洗方法,氧化温度,氧化方式等工艺因素对超薄氧化层的可靠性影响.实验表明,在850℃、900℃等高温条件下,可通过干氧N/O分压的方法制备厚度4nm~5nm、均一性小于2.0%超薄氧化层;RCA清洗工艺过程中,APM中的NH3...     

用弹道电子发射显微术研究超薄金属硅化物/硅肖特基接触

采用弹道电子发射显微术 ( BEEM)技术对超薄 Pt Si/Si、Co Si2 /Si肖特基接触特性进行了研究 ,并与电流 -电压 ( I- V)及电容 -电压 ( C- V)测试结果进行了对比 .研究了 Ar离子轰击对超薄Pt Si/n- Si肖特基接触特性的影响 .BEEM、I- V/C- V技术对多种样品的研究结果表明 ,I- V/C- V测试会由于超薄硅化物层串联电阻的影响而使测试结果产生严重误差 ;BEEM测试则不受影响 .随着离子轰击能量增大 ,肖特基势垒高度降低 ,且其不均匀性也越大 .用 BEEM和变温 I- V对超薄 Co Si2 /n- Si肖特基二极管的研究结果表明 ,变温 I- V测试可在一定程度上获得肖特基势垒