工艺参数对可逆示温微胶囊性能影响的研究

以乙基纤维素和聚乙烯为壳材料,热敏变色材料氯化钴为芯材料,Span80为乳化剂,采用油相分离法,对热敏变色材料氯化钴进行高分子材料包覆,制备了polyethylene/ethyl cellulose(PE/EC)可逆示温微胶囊.研究了壳材料用量、乳化剂用量、搅拌速率、相分离时间和环己烷用量等工艺参数对微胶囊的形成状态、包裹率等的影响规律,研究结果表明,工艺参数对微胶囊的变色温度影响不显著;随着相分离时间的增加,微胶囊的包裹率增大;随着搅拌速率的增加,微胶囊的包裹率呈先增大再降低的趋势.利用扫描电镜(SEM)和光学显微镜(OM)进行表征.微胶囊化的最佳试验条件为核壳比为1∶1, 相分离时间为3 h～4 h,搅拌速率为900 r/min.所制备的微胶囊极大地提高了可逆示温材料的变色灵敏性、环境适应性与高分子材料的相容性,具有良好的应用前景.     

三聚氰胺甲醛树脂壁微胶囊的研究进展

三聚氰胺甲醛树脂综合性能优异,近年来在微胶囊壁材领域得到了广泛应用。综述了以三聚氰胺甲醛树脂为壁材的微胶囊材料的研究现状。重点阐述了微纳米级相变储能材料、阻燃材料、有机颜料、自修复材料被三聚氰胺甲醛树脂微胶囊化后形貌及性能的变化。简要介绍了三聚氰胺甲醛树脂在微胶囊化农药、高能炸药、电子器件等材料的应用,同时总结了空心三聚氰胺甲醛树脂微胶囊最新的制备技术。展望了以三聚氰胺甲醛树脂为壁材的微胶囊在制备技术和性能改进上的可能的研究趋势。     

石蜡微胶囊化及其红外伪装隐身性能研究

用石蜡和脲醛树脂制备微胶囊相变材料,测试了微胶囊的各种性能,并对其在红外伪装隐身上的应用进行了研究．结果表明微胶囊相变材料既能够有效地模拟真目标的红外热特征,也能有效地遮蔽目标的红外热特征,具有红外隐真—示假的双重功能．     

微胶囊相变材料制备条件的优化

考察了乳化剂用量和搅拌速度对微胶囊相变材料制备的影响,通过测试证明：当乳化剂用量为9.4~9.8mL,搅拌速度为300r/min时,在三聚氰胺：甲醛=1：2.5,石蜡为10g,温度为80℃的条件下,制备得到的微胶囊相变材料包膜性能和分散性能较好。     

原位沉积法制备脲醛树脂电子墨水微胶囊

以溶有油溶蓝的四氯乙烯为油相,以甲醛和尿素溶液为水相,分别利用明胶和聚乙烯醇作为改性剂,在不同pH条件下,利用一步原位沉积法制备出脲醛树脂微胶囊,方便快捷。用AJX-02型光学显微镜对微胶囊表面形貌、球形度、分散度及粒径进行表征。对合成的微胶囊分散液进行离心分离,计算包封率。结果表明,用聚乙烯醇作为改性剂,pH=2.0,乳化时间为60 min时制备出来的微胶囊表面光滑、球形度好,粒径分布在40～500μm范围内,平均粒径为320μm,脲醛树脂的包封率达到92%。     

新型热红外复合隐身涂层的研究

本文介绍了红外隐身技术实现的基本原理,探讨了新型热红外复合隐身涂层的制备工艺和初步性能测试,即发射率、降温性能、隔热性能的测试.作为降温材料,相变微胶囊的大规模制备,使得新型热红外隐身涂层的实现有了可能.实验结果为红外复合隐身涂料的实用化研究提供了重要参考.     

原位聚合法制备石蜡微胶囊相变材料

以尿素、甲醛、三聚氰胺共聚物为壁材,以石蜡为微胶囊芯材,采用原位聚合法制备微胶囊结构的相变控温材料,采用SEM、DSC等分析手段对样品的结构和性能进行表征,从而获得影响微胶囊性能的主要因素,以及优化的制备工艺条件。     

黄绿电子墨水微胶囊的制备及性能研究

利用十八胺改性的酞菁绿G作为绿色显示颗粒,span80为电荷控制剂,四氯乙烯为分散介质,油溶黄为背景色,制备稳定的电泳液,采用界面聚合法制备出电子墨水微胶囊。研究了改性后的酞菁绿G颗粒在电泳液中分散性和颗粒大小分布,通过SEM照片证明,当十八胺的质量分数为4%时,酞青绿G在四氯乙烯下分散效果最好。对电泳液进行微胶囊化处理后,在E=50V/mm电场下,微胶囊中的颗粒可以进行可逆运动。     

液晶微胶囊制备宽波反射凝胶

手征向列相(N*)液晶能够选择性反射入射光,但其反射波宽一般小于150nm。利用负介电各向异性的向列相液晶SLC10V513-200与手性化合物R1011、CB15配制出5种N*液晶,其反射波长能够覆盖整个可见光波段。使用异佛尔酮二异氰酸酯(IPDI)界面聚合法制备出平均粒径为8.0μm的5种N*液晶聚脲微胶囊之后,将相同质量的5种微胶囊混入OP-10与IPDI中制备出微胶囊的凝胶。对80.0μm厚微胶囊凝胶薄膜施加交流电场,使微胶囊中的液晶处于平面织构状态,紫外固化微胶囊中的液晶性单体,固定微胶囊中N*液晶的平面织构,从而制备出可以反射可见光波段的微胶囊凝胶薄膜。     

一种新型电子标签天线用导电油墨的配制

基于电子标签天线对导电性要求较高的特性,实验以自制Ag作为导电填料。论文采用液相化学还原法,以次磷酸钠为还原剂,还原硝酸银制备纳米银胶。通过控制反应条件(温度、pH值等)、反应物的量(六偏磷酸钠、PVP),制备出粒径分布均匀、分散稳定性优良的纳米银胶。通过向银胶中添加电解质,析出纳米银粉,加上适量的助剂、溶剂和分散剂,制备了水性丙烯酸树脂和水性聚氨酯基导电油墨。分析了影响油墨导电性能的各影响因素。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.