应用渐近波形估计技术快速计算宽带雷达散射截面

将渐近波形估计技术应用到矩量法中,计算了任意形状二维理想导体目标的宽带雷达散射截面.计算中使用矩量法和奇异值分解技术求解电场积分方程,得到一展开频率点的表面电流密度,通过Padé近似求出给定频带内任意频率点的表面电流密度分布,进而计算出散射场和雷达散射截面.奇异值分解技术的使用消除了电场积分方程的内谐振问题.对数值计算结果与矩量法逐点求解的结果进行了比较,两者吻合良好,且计算效率提高了约一个数量级.     

渐近波形估计技术在三维电磁散射问题快速分析中的应用

本文将渐近波形估计技术应用到矩量法中,计算了三维理想导体目标的宽带雷达散射截面(RCS)和单站RCS方向图.用矩量法求解电场积分方程,得到给定频率点、给定方向入射波照射下的导体表面电流密度,应用渐近波形估计技术分别得到频带内任意频率点以及任意角度入射波照射下的导体表面电流密度,进而计算出宽带RCS和单站RCS方向图.计算结果表明渐近波形估计技术与矩量法结合可以逼近矩量法逐点计算的结果,且计算效率大大提高.     

一种求解目标内谐振时散射截面的有效方法

众所周知,在内谐振频率点上,用矩量法求解电场或磁场表面积分方程将得到不正确的表面电流。文中应用奇异值分解和正交化方法对由电场积分方程计算出的表面电流进行修正,从而得到目标表面上产生散射场的真实电流分布。文中计算了一无限长理想导体圆柱内谐振时的散射截面,所得结果与解析解一致,并对一无限长理想导体正方柱的后向散射截面进行了计算,结果表明本文方法是有效和准确的。     

基于奇异值分解的方法求解目标内谐振时的散射截面

表面积分方程已被广泛地用来分析电磁散射问题,但在离散的内谐振频率点上,用矩量法求解积分方程将得到错误的结果.本文基于电场积分方程,应用奇异值分解找出谐振模电流,并采用正交化方法将其舍去,从而得到非谐振模电流的分布.文中计算了一无限长理想导体圆柱内谐振时的散射截面,所得结果与解析解一致,并对一无限长理想导体三角柱的前向散射截面进行了计算,结果表明本文方法是有效和准确的.     

矩量法精确求解磁场积分方程的有效方法

矩量法求解磁场积分方程（MFIE)迭代收敛快,但计算精度不高. 通过提取和处理MFIE积分核中的强奇异点,并采用积分域变换消除方程中残留弱奇异性的方法,使矩量法求解MFIE能达到良好的精度. 计算了模型的雷达散射截面（RCS）MFIE计算结果与电场积分方程（EFIE）结果吻合良好,误差小于0.5 dB,且收敛性优于EFIE,验证了算法的有效性.     

MOM/Lanczos-AWE算法快速求解良导体柱的RCS宽带与宽角响应

考虑导体柱的电磁散射 ,由于一般实际导体为良导体 ,若利用表面阻抗的边界条件 ,则良导体柱的电场积分方程 (EFIE)为第二类Fredholm积分方程 ;将矩量法 (MOM )应用到该积分方程时 ,该积分方程转化为第二类Fredholm矩阵方程。本文提出了一种求解第二类Fredholm矩阵方程的Lanczos AWE递归迭代快速算法 ,首先采用Lanczos技术快速求解在某一给定频率或角度时第二类Fredholm矩阵方程 ,得到在该频率或角度时良导体的表面电流分布 ;然后采用渐近波形估计 (AWE)技术求取所考虑的频段内任意频率或角度范围内任意角度时良导体的表面电流分布。根据表面电流分布预测了任意形状良导体柱的单站雷达散射截面 (RCS)的宽带与宽角响应。计算结果表明Lanczos AWE技术可大大加快MOM法的计算速度。     

应用切比雪夫逼近快速求解目标宽带雷达散射截面

将切比雪夫逼近理论应用于目标宽带电磁散射特性分析中,通过求解给定频带内的切比雪夫节点和节点处的目标表面电流,实现了频带内任意频率点表面电流的快速预测,从而实现目标宽带雷达散射截面的快速计算.组合场积分方程的使用消除了内谐振问题.将计算结果与传统矩量法逐点计算的结果进行了比较,结果表明在不影响精度的前提下,该方法的计算效率大大提高.     

基于AWE技术的宽角度与宽频带RCS的快速计算

目标的雷达散射截面（RCS）与照射角度和照射频率都有关系,采用渐近波形估计（AWE）技术在角度域和频率域上预测任意形状的理想导体的单站RCS,通过Pade逼近求出给定角度域内任意角度及给定频带内任意频点的表面电流密度分布,进而计算出给定目标的散射场及雷达散射截面。对数值结果与矩量法逐点求解的结果进行了比较,两者吻合较好,而且提高了计算效率。     

预处理结合AWE技术求解导体目标RCS

采用渐近波形估计技术(AWE)和预处理技术求解导体目标的宽带雷达散射截面(RCS)。应用矩量法求解导体目标的电场积分方程,通过构造预条件算子,使由矩量法得到的阻抗矩阵稀疏化,从而计算导体表面电流时变得简便,再结合渐近波形估计(AWE)技术计算导体目标的宽带雷达散射截面(RCS)。实例结果表明,该方法在计算电大导体目标时具有较高的计算效率和很好的精度。     

一种应用于目标宽带RCS快速计算的高效预处理技术

矩量法常与渐近波形估计技术结合用于目标宽带雷达散射截面的快速计算,然而当目标为电大尺寸时,此种方法仍然十分耗时。该文使用一种基于可变内外迭代技术的Krylov子空间迭代法FBICGSTAB求解由电场积分方程离散得到的大型稠密矩阵方程。同时近场矩阵预处理技术将与双阈值不完全LU分解预处理技术结合用于降低FBICGSTAB的迭代求解次数。数值计算表明：在不影响精度的前提下,该文方法可以大大提高目标宽带雷达散射截面的计算效率。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.