大气压附近不同温度对碘气体简并四波混频光谱的影响

非线性激光光谱技术在气相介质的痕迹量检测方面有广泛应用。实验采用了具有自稳分光系统的前向简并四波混频(DFWM)布局,在大气压附近不同压强和不同温度条件下研究了碘气体的DFWM 光谱。在饱和泵浦和探测光强的情况下,发现温度与压强的变化对碘在波长555~556 nm 及558~559 nmDFWM 光谱结构影响较大,其中波长为555.1 nm 的跃迁对温度相当敏感。同时仍有少数碘的DFWM 光谱线较强是因为跃迁(558.81 nm)对温度不敏感,可以利用该谱线来探测不同温度下气相介质的浓度变化。所以不同温度与压强对碘气体DFWM 光谱影响的研究在气相介质痕迹量的检测以及燃烧诊断等方面有重要的应用价值。     

共振简并四波混频位相共轭研究

本文采用Nd:YAG激光的倍频光,选择了有机染料溶液、碘溶液和碘蒸气等作为简并四波混频的共振介质,研究了共振吸收介质的浓度、样品池厚度对DFWM的影响。实验较详细地研究I_2溶解于不同有机溶剂时,位相共轭信号强度与溶剂的关系,并对I_2蒸气的简并四波混频光谱作了初步的尝试。     

基于电磁感应透明的弱光非线性研究进展

利用电磁感应透明实现弱光场条件下的强非线性效应,开辟了一个崭新的非线性光学研究领域-“弱光非线性光学”。主要介绍了基于电磁感应透明的Kerr非线性和四波混频效应。Kerr非线性在全光学开关、全光学逻辑运算和光量子逻辑门等方面有着潜在的应用价值。四波混频也具有非常广泛的应用,其中最重要的是把可调谐相干光源的频率范围扩展到红外和紫外。在简并情况下,四波混频对于自适应光学中的波前再现是很有用的。另外,在材料研究中共振四波混频技术是强有力的光谱分析工具。     

基于四波混频的元素超精细光谱研究

提出将简并四波混频激光光谱分析技术用于物质超精细结构检测，加之量子光学理论计算的新方法测量同位素含量。即由实验现象确定出自激振荡频率后，在三阶极化率的基础上，通过量子光学梯形三能级系统的计算，得到了简并四波混频双光子共振吸收下，三阶极化率与原子数密度的关系。     

十二烷基苯中的简并四波混频及其三阶非线性极化率的对比测量

本文报道了十二烷基苯(dodecylbenzene)中的简并四波混频的实验研究结果。采用相对测量方法,以CS_2为标准介质较好地测定了它的三阶非线性极化率x。此外,我们还给出了利用简并四波混频对x进行相对测量的计算公式。     

钠蒸气近4D能级双光子共振光谱分析

由钠蒸气近4D能级双光子共振光谱证实，存在330nm纯参量四波混频信号，共振时参量四波混频抑制了放大的自发辐射，而激光波长失谐时产生的受激超拉曼散射削弱了参量四波混频。     

吸收介质中三阶极化率的测量

全光学信息处理、光计算机的发展依赖于具有大的三阶非线性光学材料,因此介质的三阶非线性极化率的测量就显得特别重要。吴存恺等提出了用简并四波混频方法测量透明介质的三阶极化率,G.R.Olbright用于涉法测量了CdS_xSe(1-x)玻璃的非线性折射率。本文将讨论用简并四波混频测量吸收介质的三阶极化率的方法。     

亚甲基蓝掺杂聚乙烯醇四波混频的实验研究

为了研究在低功率连续He-Ne激光条件下亚甲基蓝掺杂聚乙烯醇薄膜简并四波混频的基本特性,采用简并四波混频技术研究了亚甲基蓝掺杂聚乙烯醇的相位共轭光与入射角度、前抽运光和后抽运光的变化关系,以及透射光栅和反射光栅对相位共轭光的影响.在实验中得到了最大的相位共轭反射率为0.27%.所得的结果对研究染料固化在固体基质中的非线性研究是有帮助的.     

掺半导体玻璃的简并四波混频

用简并四波混频研究了CdS_xSe_(1-x)半导体玻璃的三阶非线性光学特性。实验结果表明这种材料具有大的三阶非线性系数(x~(3)～10~(-8)esu)和快速非线性响应时间(<1ns)。     

利用激光腔内相位共轭效应直接产生光场压缩态

本文研究通过在激光腔内进行后向或前向简并四波混频,直接产生压缩态光输出的方案。在把信号波、感生波视为量子场,对泵浦波、非线性介质采用经典描述情况下的计算表明,输出光呈现明显的压缩效应。     

常压MOCVD生长的ZnO薄膜的电学性能

利用常压MOCVD法在蓝宝石(0001)衬底上沉积了非故意掺杂ZnO单晶薄膜．用Van der Pauw法测量了其从15K到室温的载流子浓度和霍耳迁移率，并用双层结构单施主模型对载流子浓度和迁移率进行了拟合分析．研究表明：ZnO薄膜浅施主能级为20.4meV，温度较低时，以电离杂质散射为主，温度较高时，以极性光学波散射为主．     

Dynamics of a liquid plug in a capillary duct powered by vapor explosion

A theoretical model of liquid plug dynamics powered by vapor explosion in a capillary duct has been proposed in order to provide guidance for designing a fluid propulsion device. The model can evaluate performance parameters such as the amount of useful work, efficiency of energy conversion, generated vapor volume and displacement volume rate of liquid. For example, the efficiency of energy conversion for water under atmospheric pressure and room temperature is calculated at 2.8%. The prediction of the vapor volume agrees well with existing experimental result. The prediction of the displacement volume rate also agrees well with the experimental result and suggests the existence of optimum heat flux at which the displacement volume rate is maximum.     

Doping behavior of iodine in Hg0.8Cd0.2Te+

Iodine doped single crystal samples of Hg_0.8Cd_0.2Te were annealed at temperatures varying from 450 to 600°C in Hg vapor and quenched to room temperature. Hall effect measurements at 77 K on the crystals cooled to room temperature indicate the samples to be n-type after anneals at high Hg pressures whereas they turn p-type after anneals at low Hg pressures; the electron concentration increases with increase in Hg pressure. The results are explained on the basis that the crystals are saturated with (Hg,Cd)I₂, with the iodine being present as donors occupying tellurium lattice sites (I_Te) and a fraction being present as (I_TeV_Hg)’ species formed from the iodine on tellurium lattice sites (I_Te) pairing with the doubly ionized native acceptor defects (V^Hg/11). The solubility of the I_Te species increases with increase in Hg pressure, whereas that of the (I_TeV_Hg)’ species increases with decrease in Hg This work was supported by NASA under contract NAS8-33245 pressure. Equilibrium constants for the incorporation of the iodine species as well as the pairing reaction have been established     

Low threshold current AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure distributed-feedback lasers grown by metalorganic chemical vapor deposition

AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure (SCH) distributed-feedback (DFB) lasers emitting at 880 nm were fabricated by a two-step atmospheric pressure metalorganic chemical vapor deposition (MOCVD) growth technique. A CW threshold current as low as 18 mA and an output power of more than 10 mW per facet at room temperature were obtained. Also, single longitudinal and fundamental transverse modes were maintained up to more than twice the threshold current level.     

大气的布里渊散射特性研究

建立了大气布里渊散射光频移的数学模型,分析计算了温度、水汽压、大气压力等大气参量对布里渊散射特性的影响。结果表明,布里渊散射光频移受大气压、水汽压的影响很小,而受大气温度的影响很大。这些结果对大气中隐形目标的探测技术具有重要的参考意义。     

Zinc telluride films by photoenhanced metalorganic chemical vapor deposition

Polycrystalline films of zinc telluride (ZnTe) have been deposited on glass and conducting semiconductor coated glass substrates at 270°-350° C by photoenhanced metalorganic chemical vapor deposition (PECVD) using the reaction of dimethylzinc (DMZn) or diethylzinc (DEZn) and diisopropyltellurium (DIPTe) in hydrogen under atmospheric pressure. The deposited films are always ofp-type conductivity. Their properties are affected by the DMZn/DIPTe or DEZn/DIPTe molar ratio in the reaction mixture. The optimum DMZn/DIPTe ratio has been found to be approximately 0.9 on the basis of the open-circuit voltage of ZnTe/CdS heterojunctions and photoconductivity measurements. Without intentional doping, the deposited films are of high resistivity (>10⁷ ohm-cm) at room temperature, and the resistivity of these films has been controlled by using arsine as a dopant. The structural, optical, and electrical properties of ZnTe films have been characterized. Supported by the Solar Energy Institute under Subcontract XL-8-18091-1.     

InGaN光致发光性质与温度的关系

分析了用金属有机物气相外延方法(MOVPE)在蓝宝石衬底上生长的铟镓氮(InGaN)的光致发光(PL)性质.发现在4.7K至300K范围内,随着温度升高,InGaN带边辐射向低能方向移动,峰值变化基本符合Varshni经验公式;同时InGaN发光强度虽有所衰减,但比GaN衰减程度小,分析了导致GaN和InGaN光致发光减弱的可能因素.     

Tunnelling in aluminium/aluminium-oxide/palladium junctions: hydrogen-induced variations

The tunnel current of aluminium/aluminium-oxide/palladium (Al/Al2O3/Pd) junctions, obtained by means of sapphire sputtering, has been measured in air and in hydrogen-nitrogen atmosphere at various H2 concentrations ranging from 2 to 100% and at room temperature. It has been found that the tunnel current undergoes a significant change as a consequence of Pd work function lowering induced by the hydrogen. The ratio between the tunnel current in H2 and in air has a value in the range 102?106, depending on the oxide thickness. The increase of the current occurs in some hundreds of milliseconds if the hydrogen is emitted at atmospheric pressure.