Dynamic conductivity of ferroelectric domain walls in BiFeO₃

Topological walls separating domains of continuous polarization, magnetization, and strain in ferroic materials hold promise of novel electronic properties, that are intrinsically localized on the nanoscale and that can be patterned on demand without change of material volume or elemental composition. We have revealed that ferroelectric domain walls in multiferroic BiFeO(3) are inherently dynamic electronic conductors, closely mimicking memristive behavior and contrary to the usual assumption of rigid conductivity. Applied electric field can cause a localized transition between insulating and conducting domain walls, tune domain wall conductance by over an order of magnitude, and create a quasicontinuous spectrum of metastable conductance states. Our measurements identified that subtle and microscopically reversible distortion of the polarization structure at the domain wall is at the origin of the dynamic conductivity. The latter is therefore likely to be a universal property of topological defects in ferroelectric semiconductors.     

Interactions of magnetic domain walls with twin and grain boundaries in orthoferrites

Twin and grain boundaries impede the motion of magnetic domain walls in the orthoferrites. Bubbles distort and collapse before it is possible to propagate them through twin boundaries and all but very low angle grain boundaries. A new experimental technique has been used to measure the coercivity of isolated defects in nearly perfect crystals. The coercivity measured is the minimum applied field required to force a planar domain wall past a defect. Models of the spin configurations near twin and grain boundaries in the presence and absence of magnetic domain walls have been developed to explain the observed coercivities.     

Global optimum of microstructure parameters in the CMWP line-profile-analysis method by combining Marquardt-Levenberg and Monte-Carlo procedures

Line profile analysis of X-ray and neutron diffraction patterns is a powerful tool for determining the microstructure of crystalline materials. The Convolutional-Multiple-Whole-Profile (CMWP) procedure is based on physical profile functions for dislocations, domain size, stacking faults and twin boundaries. Order dependence, strain anisotropy, hkl dependent broadening of planar defects and peak shape are used to separate the effect of different lattice defect types. The Marquardt-Levenberg (ML) numerical optimization procedure has been used successfully to determine crystal defect types and densities. However, in more complex cases like hexagonal materials or multiple phases the ML procedure alone reveals uncertainties. In a new approach the ML and a Monte-Carlo statistical method are combined in an alternative manner. The new CMWP procedure eliminates uncertainties and provides globally optimized parameters of the microstructure.     

Relations between single-domain and multidomain piezoelastic properties in single crystals

This paper presents a new method to compute the piezoelastic properties of multidomain single crystals from the single-domain constants. Based on a quasi static assumption, a PMN-chiPT multidomain is defined as a periodic medium with a lattice composed of layers of two domains in a twin structure. Such a structure is assumed to have charged domain walls that imply specific lattice media and boundary conditions. A numerical computation has been performed for a PMN-33PT single crystal in the rhombohedral phase. The effective elastic, piezoelectric, and dielectric constants of the macroscopic structure have been calculated, as well as the wave velocities in different configurations of domain patterns.     

Strong ultrasonic microwaves in ferroelectric ceramics

It is well known that ferroelectric materials have piezoelectric properties which allow the transformation of electrical signals into mechanical signals and vice versa. The transducer action normally is restricted to frequencies up to the mechanical resonance frequency of the sample. There are, however, two mechanisms which allow transducer action in ferroelectric ceramics at much higher frequencies: one is the normal piezoelectric effect in a ferroelectric ceramic in which the crystallites have periodic domain structures, the other is a domain wall effect in which ferroelastic domain walls in a periodic domain structure are powerful shear wave emitters. Both mechanisms give rise to extensive dielectric losses in ceramics at microwave frequencies.     

新型纳米级微位移致动器的设计

磁致伸缩型微位移致动器通常采用多晶或孪晶结构材料作为驱动单元 ,由于晶界和孪晶界对畴壁的移动具有阻碍作用 ,其低场下的位移输出较小 ,调控精度受到较大影响。采用Tb Dy Fe单晶材料可以有效解决这一问题 ,本文介绍了采用这一单晶材料设计的新型高精度微位移致动器以及致动器的结构和数控电源     

Simulation of martensitic microstructure

The defects appearing during the process of martensitic transformation from bcc austenite to a microtextured hcp martensite are examined, with reference to molecular dynamics simulations in zirconium. The simulations involve cooling from the high temperature austenitic bcc phase. A variety of geometric defects are identified, with the structure and dynamics being understood in terms of vicinal twin boundaries and dislocations. These defects are classified as either geometrically necessary or nanoscale effects, and the evolution of the material in response to annealing and external stress is described. The observed mechanism for twin boundary motion under applied strees involves a combination of stress concentration by preexisting sessile dislocation, causing nucleation, motion and absorption of defects in the boundary plane.     

Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films

Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of the ferroelectric domain walls for application in low‐dimensional electronic systems. One of the most prominent features of the ferroelectric domain walls is their electrical conductivity. Here, using a combination of scanning probe and scanning transmission electron microscopy, the mechanism of the tunable conducting behavior of the domain walls in the sub‐micrometer thick films of the technologically important ferroelectric LiNbO₃ is explored. It is found that the electric bias generates stable domains with strongly inclined domain boundaries with the inclination angle reaching 20° with respect to the polar axis. The head‐to‐head domain boundaries exhibit high conductance, which can be modulated by application of the sub‐coercive voltage. Electron microscopy visualization of the electrically written domains and piezoresponse force microscopy imaging of the very same domains reveals that the gradual and reversible transition between the conducting and insulating states of the domain walls results from the electrically induced wall bending near the sample surface. The observed modulation of the wall conductance is corroborated by the phase‐field modeling. The results open a possibility for exploiting the conducting domain walls as the electrically controllable functional elements in the multilevel logic nanoelectronics devices.     

Microstructure study of Sm,Mn-modified PbTiO3 piezoelectric ceramics by XRD profile-fitting technique

By using the X-ray diffraction profile-fitting technique, the microstructures of Sm, Mn-modified PbTiO₃ piezoelectric ceramic discs, including ferroelectric domain sizes, microstrains, and their variations with the poling strength have been quantitatively investigated. The results manifest that the modified PbTiO₃ ceramics contain a high density of domain walls due to the presence of finely-divided coherent domain structures (tens of nanometres in dimension). The poling treament can evidently influence the domain-size distribution, with a more homogeneous microstructure being developed; however, it simultaneously causes high anisotropic microstrains within the structure which, together with the high density of domain walls, is expected to be responsible for the unusual high electromechanical coupling properties possessed by this material.     

Spontaneous vortex nanodomain arrays at ferroelectric heterointerfaces

The polarization of the ferroelectric BiFeO(3) sub-jected to different electrical boundary conditions by heterointerfaces is imaged with atomic resolution using a spherical aberration-corrected transmission electron microscope. Unusual triangular-shaped nanodomains are seen, and their role in providing polarization closure is understood through phase-field simulations. Heterointerfaces are key to the performance of ferroelectric devices, and this first observation of spontaneous vortex nanodomain arrays at ferroelectric heterointerfaces reveals properties unlike the surrounding film including mixed Ising-Ne?el domain walls, which will affect switching behavior, and a drastic increase of in-plane polarization. The importance of magnetization closure has long been appreciated in multidomain ferromagnetic systems; imaging this analogous effect with atomic resolution at ferroelectric heterointerfaces provides the ability to see device-relevant interface issues. Extension of this technique to visualize domain dynamics is envisioned.     

Diverse Defects in Alkali Niobate Thin Films: Understanding at Atomic Scales and Their Implications on Properties

Defects in ferroelectric materials have many implications on the material properties which, in most cases, are detrimental. However, engineering these defects can also create opportunities for property enhancement as well as for tailoring novel functionalities. To purposely manipulate these defects, a thorough knowledge of their spatial atomic arrangement, as well as elastic and electrostatic interactions with the surrounding lattice, is highly crucial. In this work, analytical scanning transmission electron microscopy (STEM) is used to reveal a diverse range of multidimensional crystalline defects (point, line, planar, and secondary phase) in (K,Na)NbO₃ (KNN) ferroelectric thin films. The atomic-scale analyses of the defect-lattice interactions suggest strong elastic and electrostatic couplings which vary among the individual defects and correspondingly affect the electric polarization. In particular, the observed polarization orientations are correlated with lattice relaxations as well as strain gradients and can strongly impact the properties of the ferroelectric films. The knowledge and understanding obtained in this study open a new avenue for the improvement of properties as well as the discovery of defect-based functionalities in alkali niobate thin films.     

Structural integrity and ferroelectric–piezoelectric properties of PbTiO3 coating prepared via supersonic plasma spraying

In order to prepare the PbTiO₃ coating with high density and excellent piezoelectric properties on all kinds shape surface, the PbTiO₃ coating was prepared by supersonic plasma spraying. The microstructure and mechanical properties were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectrograph (XPS). The dielectric constant and dissipation constant of the PbTiO₃ coating were tested. The results show that the coating has a single ferroelectric phase with perovskite structure, and its surface is smooth and dense. In the course of spraying, about 50% PbTiO₃ is decomposed into PbO and TiO₂ at high temperature. The ferroelectric hysteresis is weak and the ferroelectric hysteresis loop is not completely closed, which indicates that the defects, such as pores and cracks, exist in the coating. Although the defects are inevitable, the PbTiO₃ coating with ferroelectric and piezoelectric properties is successfully prepared.     

Stress relaxation in ferroelectric materials

Stress relaxation takes place in BaTiO₃ type ferroelectric materials due to the motion of non 180° domain boundaries, which are the twin boundaries. The nature of stress relaxation taking place due to plastic deformation in crystalline solids and that due to twin boundaries in ferro electric materials is discussed. The usefulness of the stress relaxation data for the study of domain wall motions in this type of ferroelectrics is pointed out.     

Abnormal C–V curve and clockwise hysteresis loop in ferroelectric barium stannate titanate ceramics

Reversible hysteresis loop, defined as integral of small signal dielectric constant with electrical field, represents the contribution of the reversible part of polarization. In barium stannate titanate ceramics, field dependence of small signal dielectric constant was abnormal. The subsequent mathematical integral showed an abnormal clockwise hysteresis loop in the temperature range of 10–40 °C. The ferroelectric hysteresis loop measured by Sawyer–Tower circuit showed slim-waist or pinched shape. This phenomenon may reveal abnormal domain switching mechanism and is believed to be related with the strong interaction between point defects and domain walls.     

Structure of weiss domains in elastic ferroelectric crystals

In this work a variational principle is proposed to study the existence and structure of Weiss domains in elastic ferroelectric crystals. Weiss domains are defined as certain subregions of the crystal in each of which the polarization vector is uniform and has a constant magnitude which is equal to the saturation polarization per unit mass for the crystal. The variational principle differs from previous ones in that the variations of the domain walls are also taken into account and it is a direct generalization of the one corresponding to the rigid crystals which we have proposed earlier. In deriving the general theory the dependence on the polarization gradients are also considered and the effect of this dependence when passing from one domain to another is represented by an appropriately chosen surface energy on domain walls. The domain structure is studied under homogeneous deformation. The effect of a small deformation field on the shape of domains is illustrated in the case of a rectangular uniaxial crystal which has initially no electric field inside. It is shown that the deformation creates a small electric field in the crystal and domain walls change slightly.     

Characterization of nanocrystalline materials by X-ray line profile analysis

X-ray line profile analysis is shown to be a powerful tool to characterize the microstructure of nanocrystalline materials in terms of grain and subgrain size, dislocation structure and dislocation densities and planar defects, especially stacking faults and twin boundaries. It is shown that the X-ray method can provide valuable complementary information about the microstructure, especially when combined with transmission electron microscopy and differential scanning calorimetry.     

Tunable metallic conductance in ferroelectric nanodomains

Metallic conductance in charged ferroelectric domain walls was predicted more than 40 years ago as the first example of an electronically active homointerface in a nonconductive material. Despite decades of research on oxide interfaces and ferroic systems, the metal-insulator transition induced solely by polarization charges without any additional chemical modification has consistently eluded the experimental realm. Here we show that a localized insulator-metal transition can be repeatedly induced within an insulating ferroelectric lead-zirconate titanate, merely by switching its polarization at the nanoscale. This surprising effect is traced to tilted boundaries of ferroelectric nanodomains, that act as localized homointerfaces within the perovskite lattice, with inherently tunable carrier density. Metallic conductance is unique to nanodomains, while the conductivity of extended domain walls and domain surfaces is thermally activated. Foreseeing future applications, we demonstrate that a continuum of nonvolatile metallic states across decades of conductance can be encoded in the size of ferroelectric nanodomains using electric field.     

Dynamics of ferroelastic domains in ferroelectric thin films

Dynamics of domain interfaces in a broad range of functional thin-film materials is an area of great current interest. In ferroelectric thin films, a significantly enhanced piezoelectric response should be observed if non-180 degrees domain walls were to switch under electric field excitation. However, in continuous thin films they are clamped by the substrate, and therefore their contribution to the piezoelectric response is limited. In this paper we show that when the ferroelectric layer is patterned into discrete islands using a focused ion beam, the clamping effect is significantly reduced, thereby facilitating the movement of ferroelastic walls. Piezo-response scanning force microscopy images of such islands in PbZr0.2Ti0.8O3 thin films clearly point out that the 90 degrees domain walls can move. Capacitors 1 microm2 show a doubling of the remanent polarization at voltages higher than approximately 15 V, associated with 90 degrees domain switching, coupled with a d33 piezoelectric coefficient of approximately 250 pm V-1 at remanence, which is approximately three times the predicted value of 87 pm V-1 for a single domain single crystal.     

Study of {332}<113> twinning in a multilayered Ti-10Mo-xFe (x = 1–3) alloy by ECCI and EBSD

We have investigated the propagation of {332}<113> twins in a multilayered Ti-10Mo-xFe (x = 1–3) alloy fabricated by multi-pass hot rolling. The material contains a macroscopic Fe-graded structure (about 130 μm width) between 1 and 3 wt% Fe in the direction perpendicular to rolling. We observe strong influence of the Fe-graded structure in the twin propagation behavior. The propagation of {332}<113> twins that are nucleated in Fe-lean regions (~1 wt% Fe) is interrupted in the grain interiors at a specific Fe content, namely, about 2 wt% Fe. We ascribe this effect to the role of Fe content in solid solution on the stress for twin propagation. The interruption of twins in the grain interiors results in the development of characteristic dislocation configurations such as highly dense dislocation walls (HDDWs) associated to strain localization phenomena. The nucleation and propagation of these dislocation configurations is ascribed to the underlying plastic accommodation mechanisms of the stress field at the twin tips. We find that the crystallographic alignment of HDDWs is determined by the stress field at the twin tips and the deformation texture. The excellent plastic accommodation at the interrupted twin tips allows attaining the good ductility of the present material (total elongation of 28%).