企业管理过程中的计算机技术应用分析

随着社会经济的不断发展,计算机技术也得到了蓬勃的发展,目前已经在各行各业中得到了广泛的应用,计算机技术在企业管理中的应用可以使企业的管理效率得到有效提升。本文基于以上背景对计算机技术在企业管理中的应用范围进行了简单的介绍,然后对计算机技术应用过程中存在的问题以及完善的途径进行了探讨与分析,希望可以为相关研究提供一些参考。     

计算机应用技术对企业信息化的影响探究

社会经济的快速发展大大提高了市场竞争的压力,在这样的环境下,企业要想在激烈的市场竞争中立足,必须顺应科学技术的发展,利用计算机技术加快企业信息化转型,从而降低企业的成本,提高企业的办事效率,提升企业的工作质量,最后实现企业国际竞争力的提升。文章就信息化发展的内涵、信息化发展的意义和计算机应用技术进入企业建设中的优势进行探究分析。     

计算机技术在档案数字化管理中的应用研究

档案数字化管理中,计算机技术的重要性不言而喻。文章主要对计算机技术在档案数字化管理中的应用意义开展分析,方便档案管理,有助于节约成本和促进信息共享。在此基础上,文章着重探究了计算机技术的具体应用,并提出了几点合理化建议,如开展计算机网络系统建设工作、提高对信息储存的相关基础工作的关注度、强化对档案信息管理人才队伍的建设、建立健全档案管理制度等,以期全面发挥计算机技术优势,创新档案数字化管理模式,优化管理质量。     

计算机技术如何推动煤矿企业的安全管理工作

随着我国经济的不断发展,计算机技术的应用范围及其广泛,特别是随着互联网的广泛应用,计算机系统的出现,极大地提升了企业的管理效率。信息管理技术在煤矿企业的管理工作中越来越重要,本文分析了目前煤矿企业安全管理存在的问题,探析计算机技术在煤矿安全管理工作中的应用及效果。     

论办公自动化中的计算机技术应用

随着社会经济及信息技术的飞速发展，计算机应用的不断普及为企业办公带来了质的飞跃，不仅提高了办公效率，对企业经济效益的提升也起到了巨大的推动作用。人们利用计算机技术速度快、效率高的特点进行文本、数字、图片、声音、视频等数据的处理、传输与共享，其强大的数据处理功能解决了工作中繁琐而复杂的问题，通过对资源进行充分利用，使企业得到持续稳定、健康而快速的发展。本文结合工作实际，通过对现代办公自动化中计算机技术应用的意义进行分析，并对办公自动化中计算机技术的应用进行探讨，为进一步提升和细化计算机技术在办公自动化中的应用提供一定的参考。     

计算机技术在办公自动化中的应用研究

当前,越来越多的企业都实现了计算机技术的深度应用,其在提升办公自动化水平上发挥着重要作用。办公室工作主要有协调与沟通作用,具有任务繁琐、工作量较大等特点,而通过对计算机技术的应用,能够将音频、图像、文字和视频等形式的信息集合起来,显著提高办公效率和质量,有利于企事业单位资源的有效整合。文中首先对办公自动化的优势与发展趋势进行了概述,然后分析了计算机技术在办公自动化中的作用,最后介绍了计算机技术在办公自动化中的具体应用。     

计算机技术在企业信息化中的应用

计算机技术和互联网的快速发展,为企业提供了更为便捷的经营和管理服务。企业应用计算机技术,逐步实现了信息化,不仅提高了管理的质量,而且提高了企业的生产效率。企业为了实现更高的社会和经济效益,必须提升企业的信息化水平。文章对计算机技术在国内企业信息化建设中的应用现状进行了探究,并针对存在的问题提出了一些建议。     

浅析计算机技术在企业管理中的应用

随着互联网的进一步普及和发展,计算机技术在企业管理中的应用越来越广泛。从企业的生产过程到企业的管理和组织等整个过程,都有计算机技术的用武之地。通过利用计算机技术,可以大大的降低企业的生产成本,提高整个企业的生产效率和生产质量。提高整个企业的内部管理能力。当前,我国企业都处于转型阶段,通过应用计算机技术,可以快速实现企业管理的现代化和高效率化。如何通过计算机技术来加强企业管理,加强核心竞争力,实现持续创新对企业的成长具有决定性的意义。     

对招标代理企业管理中计算机技术的应用分析

计算机和互联网技术呈现迅猛发展,且被广泛应用于各大企业中.而计算机技术在招标代理企业管理中的运用,一方面可以有效降低企业的经济成本,调动员工的工作积极性,提高工作效率,另一方面可降低人力资源在企业管理中的投入.建立并完善信息化、现代化的招标代理企业管理信息化系统,为管理更加全面的掌握企业信息提供了便捷,以此来保证管理工作的科学性、合理性.本文主要对招标代理企业管理中计算机技术的应用进行分析,仅供参考.     

系统方法在质量管理中的应用

系统方法在质量管理中已得到广泛的应用,它能促进企业质量管理水平的提高,提升企业竞争力.本文介绍了系统方法在质量管理中的含义、意义和系统方法在质量管理中的运用管理.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.