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描述了两种液态聚合物LED器件特性及发光机制,一种是溶液LED(SLED),活性层为溶液介质;另一种是凝胶介质,其中含有溶剂,二者发光机理都产生于电产生的化学发光(ECL)。前者载流子是带电的聚合物链,靠近阴极处被氧化的聚合物分子及靠近阳极的被还原的分子分别向对电极移动时复合产生辐射跃近;后者仅是在阴极处被氧化的溶剂分子,在凝胶中迁移时与在阳极附近被还原的高分子链相遇而产生辐射复合。它们与固体聚合物LED和EL发光机制有些不同。另外,描述了聚合物激光及Bell实验室研制的电注入激光现象。 相似文献
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有机聚合物CPU的结构形态 总被引:1,自引:0,他引:1
本文用扫描隧道显微镜(STM)研究了有机氰基-苯基-脲(CPU)的表面结构。在不同的CPU薄膜制备条件下,得到了不同的CPU薄膜的STM像,表明制备条件与成膜结构的密切关系。观察到了CPU薄膜中晶区和非晶区的存在,证实了聚合物晶体中晶区和非晶区的模型。 相似文献
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本文分析了一种平面波导啁啾光栅的透镜性质。并在旁轴近似条件下求出了这种光栅透镜的焦距。首次采用了光漂白方法在PMMA/DR1平面波导上制备出了啁啾光栅,从实验上观测了这种啁啾光栅对衍射光的透镜效应。 相似文献
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研究了光漂白过程对PMMA/DR1聚合物薄膜非线性吸收的影响,实验结果表明经过光漂白后其双光子吸收系数减小。 相似文献
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研究了在1064nm处非线性吸收对有机聚合物材料PMMA/DR1光漂白的影响。实验结果表明,在较强的入射光作用下,由于双光子吸收的作用,使得PMMA/DR1发生光漂白,其折射率产生微小的变化,且随光漂白时间的增加而产生饱和。 相似文献
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薄膜的厚度、折射率和传输损耗等参数在电光系数的确定和光波导器件的设计和制作过程中都是重要的参考数据。采用旋涂法制备了三种不同质量比的偶氮化合物染料分散红13(DR13)与聚合物聚甲基丙烯酸甲酯(PMMA)复合薄膜;利用分光光度计测量样品的吸收光谱;利用棱镜耦合仪测量了薄膜的厚度和折射率,并对不同波长下的折射率进行拟合得到折射率色散曲线;采用视频摄像技术研究样品的光传输特性,利用自己编写的计算机程序来处理其实验结果。DR13/PMMA复合薄膜在300nm和500nm处有两个大的吸收峰,而在其他波段,尤其是在通信波段没有明显吸收。薄膜的膜厚大约为1~2μm,其折射率随着质量比的增加而增大,随着激光波长的增大而降低,膜厚和折射率的误差分别为3.2×10-1μm和1.5×10-3。三种质量比(10%,15%和20%)的薄膜传输损耗分别为1.5269dB/cm,2.7601dB/cm和3.6291dB/cm,可以看出随着DR13质量比的增大,光传输损耗也逐渐增大,即DR13的含量对于传输损耗的影响较大。 相似文献
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报道了用可溶性发光材料聚(2,5-二丁氧基苯)做发光材料,分别与母体聚合物聚乙烯基咔唑(PVK)和聚甲基丙烯酸甲脂(PMMA)共混,并掺杂电子传输材料叔丁基联苯基苯基口恶二唑和空穴传输材料二胺衍生物作发光层,用铟锡氧化物和铝分别作正负电极,制作了两种蓝紫光有机/聚合物单层发光器件。通过比较两种器件的器件特性,发现以PMMA做母体的器件比用PVK做母体的器件有更好的稳定性,器件开启电压为10V左右,发光峰值波长均位于424nm,电致发光效率可达2.9%,比用PVK做母体的器件效率高一倍多。 相似文献
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当有机发光二极管(OLED)显示器和液晶显示器(LCD)在可获利的消费电子产品市场展开竞争时,其有限的使用寿命和较高的生产成本是其在竞争中获胜的主要障碍。虽然OLED的许多优异特性,如较高的亮度、较好的对比度和彩色是大家公认的,但仍受其性能衰减问题的困扰。对 相似文献
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基于第一性原理,应用Materials Studio软件对2H-MoS2的能带结构、态密度、光学特性等进行了模拟研究.结果 表明:MoS2是间接带隙半导体,禁带宽度约为1.1275 eV;材料在紫外至可见光波段具有一定吸收,吸收系数随波长增加而减小,拉曼光谱在375和400 cm-1分别出现了E2g1和A1g两个振动模式.在39.5°,33.5°等位置处出现了(103),(101)等晶面的衍射峰.采用磁控溅射的方法,在石英衬底上制备了不同厚度的MoS2薄膜,发现该薄膜具有(101)择优取向,在375和407 cm-1处也分别出现了E2g1和A1g两个拉曼峰.随着厚度的增加,薄膜在可见光波段透过率下降,光学带隙向长波长移动,模拟结果与实验结果基本吻合. 相似文献
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采用两步水热法在导电玻璃(FTO)上制备了WO3/NiWO4复合薄膜。通过XRD,SEM表征了WO3/NiWO4复合薄膜的组成结构及微观形貌,利用UV-Vis、光电流测试、光电催化测试和交流阻抗测试分析了WO3/NiWO4复合薄膜的光电性能。结果表明:WO3/NiWO4复合薄膜相较于WO3薄膜具有更好的光吸收特性、光电流密度和光电催化活性,其中水热反应3h的WO3/NiWO4复合薄膜的光电化学性能最佳。WO3/NiWO4-3h在1.4V(vs.Ag/AgCl)时的光电流密度为1.94mA/cm2,光电催化210min对亚甲基蓝溶液的降解效率为57.1%。交流阻抗图谱表明WO3/NiWO4薄膜的电荷转移电阻小于WO3薄膜,光电化学性能更优。 相似文献
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In this work H2 plasma curing is studied to appreciate hydrogen species impact on porogen removal efficiency and transformation occurring within the porous SiOCH structure. The investigation is done by comparing H2 plasma with other curing treatment (UV curing). H2 plasma curing shows a benefit in term of porogen removal and can be considered as a fast process as only few minutes are required to decompose the C-H bonds and create the porosity. However, longer treatment reveals carbon depletion by Si-CH3 decrease and porosity collapse through the shrinkage enhancement. Plasma treatments lead also to the creation of SiH bonds which could serve as a hydrogen radical generator when the film is electrically stressed. The leakage current and breakdown voltage values are then affected by these hydrogen radicals, which can contribute in the electrical conduction. The H2 process allows obtaining films with a dielectric constant below 2.4. This process shows encouraging results comparing with the k = 2.35 obtained with UV curing technology. 相似文献
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The epitaxial growth of an epi-Ge layer via GexSi1-xO2 reduction in hydrogen annealing is reported. GexSi+1-x alloys with x = 0.52 and 0.82 were first grown epitaxially on Si substrates. They were then oxidized in a wet ambient and
subsequently annealed in 5% or 100% H2. The reduction of Ge from its oxide state is observed in both samples with both ambients. However, an epitaxial Ge growth
is only observed in the sample with x = 0.82 after the 5% H2 annealing. The other three cases result in the formation of polycrystalline Ge. The roles of the hydrogen partial pressure
and the Ge content are discussed and conditions under which this novel mode of solid-phase epitaxy can occur are explained. 相似文献
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Shang-Chou Chang Tien-Chai Lin To-Sing Li Sheng-Han Huang 《Microelectronics Journal》2008,39(12):1572-1575
To find the possibility of using a low-temperature process in growing carbon nanotubes (CNTs), nickel catalyst converted from film into particles by microwave H2/N2 plasma and the following CNT growth are all kept at a low temperature of 250 °C. The flat panel display industry requests low-temperature rather than the traditional high-temperature process for CNT growth. It was found that H2/N2 proportion is very sensitive to nickel morphology and the subsequent CNT growth. Better nickel and CNTs morphology are obtained for the proportion H2/N2=3/1 than those for the generally used pure hydrogen environment. The process pressure selection during pretreatment can determine whether CNTs are grown or not. The diameter of growing CNTs is proportional to nickel particle size. Field emission results support field amplification coefficient claim. The long tube length and high tube density of growing CNTs demonstrate low threshold electric field. This work shows the potential to use H2/N2 instead of pure hydrogen plasma in growing qualified CNTs applied in display industry. 相似文献