（英）磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究

本文中,采用磁控溅射制备Ga掺杂ZnO (GZO)/CdS双层膜在p型晶硅衬底上以形成GZO/CdS/p-Si异质结器件。纳米晶GZO/CdS双层膜的微结构、光学及电学特性,通过XRD、SEM、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征。GZO/CdS/p-Si异质结J-V曲线显示良好的整流特性。在±3V时,整流比IF/IR(IF和IR分别表示正向和反向电流)已达到21。结果表明纳米晶GZO/CdS/p-Si异质结具有好的二极管特性,在反向偏压下获得高光电流密度。纳米晶GZO/CdS/p-Si异质结显示明显的光伏特性。由于CdS晶格常数在GZO和晶Si之间,它能作为一个介于GZO和晶Si之间的缓冲层,能有效地减少GZO和p-Si之间的界面态。因此,我们获得了GZO/CdS/p-Si异质结明显光伏特性。     

基于ZnO纳米线阵列和P3HT的混合光电二极管特性

为了发展低成本、大面积和高性能光电二极管,采用简单的化学浴沉积方法,在氧化铟锡(I TO) 玻璃基底上生长良好取向的ZnO纳米线阵列(ZNWA),然后在生长的ZNWA上旋涂规整的聚3-己 基噻吩(P3HT)层,形成结构为ITO/ZNWA/P3HT/Ag的光电二极管。系统研究了此光电二极管在 暗态和在太阳模拟器的光照下的电流-电压 (I-V)特性。实验结果表明,器件在暗态和光照下都表现出良好 的二极管特性。暗态下,在偏压±2V处的整流 率为3211, 理想因子为1.8、低开启电压为0.5V和反偏饱和电流为1．13×10－7 A。在20mW/cm²光照下,在偏压±2V处的整流率为39.1、开启电压为0.3V。器件中产生了大量的光生载流子,根据器件的能级结构图和光生载流子的 输运过程对此光电二极管的光响应机理进行了解释。     

磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究

采用磁控溅射制备Ga掺杂ZnO (GZO)/CdS双层膜在p型晶硅衬底上以形成GZO/CdS/p-Si异质结器件。纳米晶GZO/CdS双层膜的微结构、光学及电学特性,通过XRD、SEM、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征。GZO/CdS/p-Si异质结J-V曲线显示良好的整流特性。在±3 V时,整流比IF/IR(IF和IR分别表示正向和反向电流)已达到21。结果表明纳米晶GZO/CdS/p-Si异质结具有好的二极管特性,在反向偏压下获得高光电流密度。纳米晶GZO/CdS/p-Si异质结显示明显的光伏特性。由于CdS晶格常数在GZO和晶Si之间,它能作为一个介于GZO和晶Si之间的缓冲层,能有效地减少GZO和p-Si之间的界面态。因此,我们获得了GZO/CdS/p-Si异质结明显光伏特性。     

ZnO纳米颗粒的紫外光探测器制备及其特性

为了发展高性能、低成本和结构简单的ZnO紫外 光探测器。在本文中,利用溶液法,制备出ZnO 纳米颗粒,采用透射电子显微镜(TEM)、X射线衍射仪(XRD)、紫外-可见分光光度计和荧光 光谱仪,分别 研究了ZnO纳米颗粒的形貌、晶相结构和光学特性。结果显示:样品呈球形状的颗粒,尺寸 分布在6~8.5nm 之间,平均粒径为7.1nm,为六方纤锌矿结构。发现ZnO纳米颗 粒的陡峭吸收边出现在370nm附近,在390nm 处出现一个很强的近带边发射峰和一宽泛的可见光发光带。此外,利用制备的ZnO纳米颗粒 ,旋涂在刻蚀 有叉指电极的FTO(SnO₂:F)上,制备出紫外光探测器,测试了它在暗态和365 nm紫外光照下的电流-电压(I-V) 和电流-时间(I-t)特性。结果表明:紫外光探测器的灵敏度、光响应度、响 应时间、恢复时间分别为62.4(在 －3.5V处),13.6A/W(在+5V处), 15s。另外,它的光响应机理主要由于ZnO纳米 颗粒表面吸附的氧起主导作用。     

射频磁控溅射法制备AZO/p-Si异质结及其性能研究

利用射频磁控溅射法,在p-Si衬底上生长了Al掺杂的ZnO(AZO)薄膜,并进而制备了AZO/p-Si异质结。X射线衍射仪、紫外-可见光分光光度计、四探针测试仪和霍尔效应测试仪测量表明,AZO薄膜具有良好的结晶质量、光学和电学特性。暗态下的I-V测试表明,AZO/p-Si异质结具有较好的整流特性,反向饱和电流为1.29×10-6A,±2V处的正向和反向电流之比为229.41,计算得出异质结的理想因子为2.28。在标准光照下AZO/p-Si异质结呈现出明显的光生伏特效应,这种异质结太阳电池具有2.51%的光电转换效率。     

基于ZnO纳米线阵列和P3HT的混合光电二极管特性

为了发展低成本、大面积和高性能光电二极管,采用简单的化学浴沉积方法,在氧化铟锡(ITO)玻璃基底上生长良好取向的ZnO纳米线阵列(ZNWA),然后在生长的ZNWA上旋涂规整的聚3-己基噻吩(P3HT)层,形成结构为ITO/ZNWA/P3HT/Ag的光电二极管。系统研究了此光电二极管在暗态和在太阳模拟器的光照下的电流-电压(I-V)特性。实验结果表明,器件在暗态和光照下都表现出良好的二极管特性。暗态下,在偏压±2V处的整流率为3 211,理想因子为1.8、低开启电压为0.5V和反偏饱和电流为1.13×10-7 A。在20mW/cm2光照下,在偏压±2V处的整流率为39.1、开启电压为0.3V。器件中产生了大量的光生载流子,根据器件的能级结构图和光生载流子的输运过程对此光电二极管的光响应机理进行了解释。     

ZnO/p-Si异质结构的电学输运特性

采用等离子体浸没离子注入沉积方法,在p型Si衬底上制备了具有整流特性的、非故意掺杂的以及掺氮的ZnO/p-Si异质结.非故意掺杂的ZnO薄膜为n型(电子浓度为1019cm-3数量级),掺氮的ZnO薄膜为高阻(电阻率为105Ω·cm数量级).非故意掺杂的ZnO/p-Si异质结在正向偏压下,当偏压大于0.4V,电流遵循欧姆定律.然而对于掺氮的ZnO/p-Si样品,当偏压小于1.0V时,电流表现为欧姆特性,当偏压大于2.5V时,电流密度与电压的平方成正比的关系.分别用Anderson模型和空间电荷限制电流模型对非故意掺杂和掺氮的ZnO/p-Si异质结二极管的电流输运特性进行了解释.     

紫外光照下ZnO基薄膜的光电和气敏特性研究

用sol-gel法制备ZnO及掺杂Al3+的ZnO半导体薄膜,利用XRD和AFM对薄膜结构和形貌进行表征。测量了不同掺Al量的薄膜在紫外光照射下电阻的变化,发现随着掺Al量的增大,薄膜在紫外光(波长为365nm)照射后其电阻先减小后增大。在室温下,对薄膜在不同浓度的CO气体下的敏感特性进行了研究,随着气体浓度的增加,薄膜电阻值逐渐减小;随着掺Al量的增大,气敏灵敏性先逐渐增大后减小,发现当铝含量为r(Al:ZnO)=0.5%时,对CO气体的灵敏度最大,并对紫外光照射下气敏半导体薄膜的气敏机理进行了简单分析。     

ZnO纳米结构薄膜的三阶非线性折射特性

采用直流溅射法在石英基片上制备了ZnO纳米结构薄膜。X射线衍射(XRD)谱表明ZnO尺寸约为5nm。利用Z 扫描技术,以锁模Nd:YAG激光器作光源(脉宽35ps,波长为355nm),在共振区域测定了ZnO纳米薄膜的三阶非线性光学常数,其非线性光学折射率常数n2=-5.7×10-8esu。     

ZnO/p-Si异质结的I-V及C-V特性研究

通过磁控溅射Al掺杂的ZnO陶瓷靶,在p-Si片上沉积n型电导的ZnO薄膜而制备了ZnO/p-Si异质结,并通过测试其光照下的I-V、C-V特性对其光电特性以及载流子输运特性与导电机理进行了研究。研究表明ZnO/p-Si异质结存在良好的整流特性与光电响应,可以广泛应用在光电探测和太阳电池等领域。由于在ZnO/p-Si异质结界面处的导带补偿与价带补偿相差太大的缘故,在正向电压超过1V时,导电机理为空间电荷限制电流导电。同时,研究表明ZnO/p-Si异质结界面存在大量界面态,可以通过减小界面态进一步提高其光电特性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks