多壁碳纳米管复合BiSbTe材料的热电性能（英文）

研究了BiSbTe/多壁碳纳米管(MWCNTs)复合材料的球磨法制备及其热电性能(300~500 K)。采用商用BiSbTe块体作为基体材料,利用球磨及压力辅助的感应加热烧结进行致密化得到了不同复合比的BiSbTe/0.5、1.0 vol%MWCNTs复合材料。复合MWCNTs后,引入的纳米复合结构增强了声子散射,大幅降低了热导率,同时由于载流子散射的增强和较低的致密度使电导率恶化。尽管电导率降低但热导率得到抑制,BiSbTe/1.0 vol%MWCNT复合材料的热电优值与BiSbTe基体接近。结果表明,优化加工参数获得更高的致密度可以优化BiSbTe/MWCNTs复合材料的热电性能。     

Mg_2Si同质纳微米复合材料的制备及其热电性能

以平均晶粒尺寸约3μm及20 nm的Mg_2Si粉末为原料,采用放电等离子体烧结方法制备出不同纳米、微米含量的Mg_2Si纳微米复合块体材料,系统研究了纳微米结构对材料热电性能的影响.结果表明:随复合材料中纳米颗粒含量的增加,晶界散射增强,导致材料晶格热导率κ_p有明显降低;同时晶界势垒散射的增强也导致Seebeck系数α显著增加,电导率σ有一定程度的降低;综合Seebeck系数α、电导率σ、热导率κ的影响,在纳米颗粒含量为50%(质量分数,下同)、823 K时,获得最大热电优值达0.45,分别是未掺杂纳米相和完全纳米相Mg_2Si材料的1.5及1.1倍.纳微米复合结构的引入,可以获得性能更好的Mg_2Si热电材料.     

高能球磨工艺对CNTs/Cu复合粉末与材料性能的影响

采用卧式高能球磨和机械合金化工艺制备了纳米碳管增强铜基(CNTs/Cu)复合粉体,并采用真空冷压烧结法制备出CNTs/Cu复合材料。研究了高能球磨工艺参数对复合粉体与材料性能的影响,包括球磨时间和搅拌轴转速对复合粉体粒度、松装密度的影响,及其对该复合材料力学性能的影响。结果表明,高能球磨技术有利于CNTs与铜的界面结合和机械合金化。高能球磨的最佳工艺条件为搅拌轴线速度为4.2/5.4 m/s和球磨时间为2~4h,得到的CNTs/Cu复合粉体中位径11.76μm,松装密度1.356 g/cm3。CNTs/Cu复合材料的致密度达94%,硬度达92 HB,抗拉强度达138 MPa。     

机械合金化对W-20Cu复合材料的显微组织与性能的影响

采用机械合金化结合粉末冶金技术制备W-20Cu(vol%)复合材料.利用扫描电镜和金相显微镜对不同球磨时间的W-20Cu复合材料显微组织进行表征,并对材料的各项物理性能进行测试.结果表明,随着球磨时间的延长,W-20Cu烧结体的组织越来越均匀,Cu相分布也越来越均匀.W-20Cu烧结体密度、收缩率、硬度、抗弯强度随球磨时间的延长而增大;球磨20h的W-20Cu复合粉烧结体热导率达到峰值(130.61 Wm-1K-1),继续球磨,热导率减小.综合考虑所有研究结果,通过机械合金化所制备的W-Cu复合粉体可以获得具有优异综合物理性能的W-20Cu复合材料.     

有机纳米颗粒复合Co掺杂ZnO热电性能研究（英文）

有机-无机纳米结两端有机材料的离散轨道能级与无机半导体的连续能带差异减小时,使得纳米结界面具有选择性散射不同能量载流子的特征,有利于提高赛贝克系数和热电性能。利用溶胶-凝胶法合成了具有有机-无机纳米结结构的聚对苯撑(PPP)纳米复合Zn_(1-x)Co_xO材料。研究结果表明,较高电导率和赛贝克系数使Zn_(0.925)Co_(0.075)O/9%PPP呈现较大的功率因子。另外,有机-无机纳米界面上的界面散射大大降低了热导率。因而,合成的纳米复合材料最大ZT值达到0.22,是Zn_(0.925)Co_(0.075)O基体材料的5倍。这一实验结果表明纳米结效应是提高块体热电材料热电性能的有效途径。     

粉末冶金制备50%SiC_p/Al复合材料的结构及性能

采用球磨加常压烧结的粉末冶金工艺制备50%SiC_p/6061Al(体积分数)复合材料,研究了烧结温度对该高体积分数SiC_p/Al复合材料结构与性能的影响。结果表明:球磨有利于形成成分均匀的50%SiC_p6061Al复合粉体;随着烧结温度的升高,50%SiC_p/6061Al复合材料的致密度及抗弯强度先增后减。710℃烧结的复合材料性能最佳,致密度达到97%,抗弯强度大于400 MPa。该复合材料中SiC_p呈解理断裂,而Al合金基体呈韧性撕裂的断裂特征。750℃烧结的50%SiC_p/6061Al复合材料中,SiC_p/Al界面反应加剧,生成较多的Al4C3相,导致复合材料结构劣化,性能降低。     

硅纳米线复合Mg2Si基热电材料的制备与性能研究

利用溶液法混合粉体并通过电场激活压力辅助烧结(FAPAS)方法制备了不同硅纳米线含量的Mg_2Si基复合热电材料,研究了硅纳米线的掺入及含量对基体材料热电性能的影响。结果表明:硅纳米线掺入后材料电导率大幅降低,塞贝克系数基本不变,热导率小幅降低。随着硅纳米线掺量增加,材料电导率降低,塞贝克系数稍有提高,热导率有升高趋势。硅纳米线掺量为0.1at%的样品在800 K时ZT值达到最高值0.5。     

碳纳米管增强铜基复合材料的制备、力学性能及电导率

以CNTs、电解Cu粉、Cu(CH_3COO)_2·H_2O为原料,采用混酸处理、分子水平法结合行星球磨两步混合工艺制备含0.5%～2%(质量分数)CNTs的Cu基复合粉末,然后通过放电等离子烧结技术制备了Cu-CNTs复合材料,探讨了制备工艺及CNTs含量对Cu-CNTs复合材料的组织、电导率和力学性能的影响规律。结果表明:当CNTs含量小于1.0%时,采用两步混粉工艺制备的Cu-CNTs复合粉体均匀性、分散性良好,经烧结后可获得致密度高、CNTs分布均匀的Cu-CNTs复合材料;当CNTs含量大于1.0%时,复合材料的致密度及CNTs分布均匀性明显降低;随CNTs含量的提高,复合材料的强度先升高后降低,塑性和电导率趋于降低;相对高能球磨、分子水平法等单一混粉工艺而言,两步法制备的Cu-1.0%CNTs复合材料综合性能更优,其电导率为51.7 MS/m(89.1%IACS),维氏硬度为1130 MPa,抗拉强度为279 MPa,断后伸长率为9.8%。     

B掺杂p型SiGe合金的制备与热电性能表征

以一定化学计量比均匀混合的Si、Ge、B混合粉末为原材料,使用放电等离子烧结(SPS)一步法合金化制备了p型Si₈₀Ge₂₀B_x(x=0.5,1.0,2.0)合金热电材料,并对样品的组成、微观形貌、热电性能进行了表征与分析。结果表明,放电等离子烧结过程实现原位合金化并烧结为块体材料。随着B掺杂量的增加,电导率明显提升,热导率显著下降,当温度为950K时,热导率为1.79W/(m·K)。在1050K时,ZT值达到了0.899。球磨和掺杂的协同作用使得SiGe合金基体内产生不同类型的缺陷特征而散射不同波长的声子,导致硅锗合金热导率的降低。     

SPS制备金刚石/铜基复合材料的组织和性能

采用放电等离子烧结(SPS)方法制备了低金刚石含量的金刚石/铜基复合材料,研究了金刚石含量对复合材料的致密度、热导率、抗拉强度和伸长率等的影响。结果表明,随着金刚石含量的增加,金刚石/铜基复合材料的致密度、热导率、力学性能都先增后减。当金刚石含量为1.0%时,复合材料的抗拉强度达到221.35 MPa;在金刚石含量为1.5%时致密度达到最大值;热导率和伸长率都是在金刚石含量为2.0%时达到最大值。金刚石/铜基复合材料的断裂机制主要是韧性断裂以及增强体界面剥离。     

Thermoelectric properties of MxMo6Te8 （M=Ag, Cu）

Ag and Cu filled Chevrel phase MxMo6Te8 (x=1.0, 2.0) samples were synthesized by direct solid state reaction and spark plasma sintering. The electrical and thermal properties were investigated in the temperature range of 300-800 K. The results show that both the electrical and thermal properties are affected by filler atoms. Although the electrical conductivity of MxMo6Te8 is slightly higher than that of state-of-the-art thermoelectric material, such as filled skutterudites, the absolute value of Seebeck coefficient is relatively low. Due to the phonon scattering by the filler atoms, the decrease of the thermal conductivity and the lattice thermal conductivity is obvious. As a result, the dimensionless figure of merit(ZT) is improved over the whole temperature region. The highest ZT value is 0.034 at 800 K for the AgMo6Te8 sample.     

Influence of Sb doping on thermoelectric properties of Mg2Ge materials

The Sb-doped Mg₂Ge compounds were successfully synthesized by tantalum-tube weld melting method followed by hot pressing and the thermoelectric properties were examined. The effects of Sb doping on the electrical conductivity, Seebeck coefficient, and thermal conductivity have been investigated in the temperature range of 300–740 K. It was found that the Sb doping with sufficient Mg excess increased the electrical conductivity dramatically, leading to enhancement of the power factors. The thermal conductivity was also reduced upon Sb doping, mainly due to mass fluctuation scattering and strain field effects. Mg_2.2Ge_0.095Sb_0.005 showed a maximum thermoelectric figure of merit of ≈0.2 at 740 K.     

添加W对ZrB2-SiC复合材料的微观组织、力学性能和氧化行为的影响

通过放电等离子烧结技术制备了添加不同W含量(1%,3%和5%,体积分数,下同)的ZrB₂-SiC复合材料,研究了烧结过程中复合材料的致密化行为,分析了添加W对复合材料微观组织演化、相组成、力学性能和氧化行为的影响。结果表明：W的添加使复合材料的微观组织表现出核壳结构,以ZrB₂晶粒为核,原位形成的(Zr, W)B₂固溶体为壳,有效地促进了复合材料的致密化和晶粒细化。对比不含W的复合材料,含W复合材料的维氏硬度、抗弯曲强度和断裂韧性显著提高,W添加含量在3%时力学性能最优,复合材料表现出最佳的硬度、强度和韧性。随着W添加量从0%增加到5%,复合材料的氧化增重和氧化层厚度逐渐减小。当W添加量为5%时,复合材料的SiC贫化层消失。最后,详细说明了W的添加对复合材料性能的影响机制。     

Thermoelectric Properties of P-Type Ga2Te5 Based Compounds

采用放电等离子烧结技术(SPS)制备P型复相Ga2Te5基化合物,对其进行微观分析和热电性能测试。通过XRD分析观察到主相Ga2Te5和少量的SnTe、单质Te。在整个测试温度(319～549K)范围内,Ga2Te5基化合物的Seebeck系数、电导率和热导率都随温度的升高而降低。由于具有相对较低的热导率和较高的电导率,Ga2SnTe5在549K时取得了最高ZT值0.16。     

Transport properties on Sn-filled and Te-doped CoSb<Subscript>3</Subscript> skutterudites

Sn-filled and Te-doped CoSb₃ skutterudites (Sn_xCo₈Sb_23.25Te_0.75) were synthesized by the encapsulated induction melting process. Single δ-phase was successfully obtained by subsequent heat treatment at 823 K for 6 days. Structural characterizations were carried out through X-ray diffraction studies. Transport properties such as the Seebeck coefficient, electrical resistivity, thermal conductivity, carrier concentration and mobility were measured and analyzed. The unfilled Co₈Sb_23.25Te_0.75 sample showed n-type conductivity from 300 K to 700K. However, the Sn-filled Sn_xCo₈Sb_23.25Te_0.75 showed n-type conductivity for z=0.25 and 0.5, and p-type conductivity for z=1.0 and 1.5 from 300 K to 700 K. Thermal conductivity was reduced by the impurity-phonon scattering. The dimensionless figure of merit (ZT) was remarkably improved over that of untreated CoSb₃. However, the ZT value decreased when filling with z≥1.0 because the conductivity type was changed from n-type to p-type, thereby allowing bipolar conduction. The details are discussed in terms of the two-band model and the bipolar thermoelectric effect.     

Enhanced thermoelectric performance of Bi_2Se_3/TiO_2 composite

Bi_2(Te,Se)_3 alloys are conventional commercial thermoelectric materials for solid-state refrigeration around room temperature.In recent years,much attention has been paid to various advanced thermoelectric composite materials due to the unique thermoelectric properties.In this work,Bi_2Se_3/TiO_2 composites were prepared by hot pressing the plate-like Bi_2Se_3 powders coated in situ with hydrolyzed hytetabutyl-n-butyl titanate(TNBT),and therefore numerous TiO_2 in micrometer size could be formed on the interface of Bi_2Se_3 grains.The carrier concentration in Bi_2Se_3 matrix is optimized subject to the addition of n-type semiconductor TiO_2,contributing to a significant improved power factor.In the meantime,the lattice thermal conductivity is also suppressed due to the enhanced phonon scattering at Bi_2Se_3/TiO_2 interface and amorphous TiO_2 particles.As a consequence,a peak figure of merit(zT) of 0.41 is obtained at 525 K in Bi_2Se_3/15 mol% TiO_2 composites,nearly 50% augment over the pristine Bi_2Se_3 binary compound.     

Sb掺杂对Mg_2Si基化合物热电性能的影响(英文)

采用感应熔炼和真空热压的方法制备了Sb掺杂和未掺杂的Mg2Si基热电材料.研究了Sb掺杂对Mg2Si基热电材料的结构以及热电特性的影响.结果表明:通过Sb掺杂使得载流子浓度从3.07x1019 cm-3增加到1.25x1020 cm-3,电子有效质量也相应增加.测试了从室温到800 K下试样的Seebeck系数,电导率和热导率.结果显示,0.3 at%Sb掺杂使得电导率得到显著增加,在783 K时,ZT值达到0.7.     

Optimization of thermoelectric properties of n-type Bi_2(Te,Se)_3 with optimizing ball milling time

The thermoelectric properties at elevated temperature were investigated for n-type Bi2(Te,Se)3 which is obtained from ball milling processed powder with various milling times. Electrical properties such as electrical resistivity and Seebeck coefficient are clearly dependent on milling time, in which the carrier concentration is attributed to the change of the electrical properties. The concentrations of the defects are also varied with the ball milling time, which is the origin of the carrier concentration variation. Even though finer grain sizes are obtained after the long ball milling time, the temperature dependence of the thermal conductivity is not solely understood with the grain size, whereas the electrical contribution to the thermal conductivity should be also considered. The highest figure of merit value of ZT = 0.83 is achieved at373 K for the optimized samples, in which ball milling time is 10 h. The obtained ZT value is 48% improvement over that of the 0.5-h sample at 373 K.     

Thermoelectric properties of Ni- and Zn-doped Nd2CuO4

The electrical resistivity, Seebeck coefficient, and thermal conductivity of Nd₂(Cu_0.98M_0.02)O₄ (M: Ni and Zn) have been measured in the temperature range from room temperature to about 1000 K. Ni- and Zn-doping decreases the electrical resistivity and the absolute values of the Seebeck coefficient. The thermal conductivity decreases with increasing temperature, showing phonon conduction, and also decreases by doping. The power factor of Nd₂(Cu_0.98Ni_0.02)O₄ reaches 1.02×10⁻⁴ W m⁻¹ K⁻² and the figure of merit is 1.35×10⁻⁵ K⁻¹ at 320 K. The relatively low figure of merit compared with that of the state-of-the-art thermoelectric materials is due to the high thermal conductivity.