有强内电场的GaN-基阶梯量子阱中的线性与非线性光吸收

采用密度矩阵方法,考察了带强内建电场GaN-基阶梯量子阱中的线性与非线性光吸收系数.基于能量依赖的有效质量方法,在考虑了带的非抛物性情况下,推导了结构中的精确解析的电子本征态,给出了系统中简单解析的线性与非线性光吸收系数表达式.以AlN/GaN/AlxGa1-xN/AlN阶梯量子阱为例进行了数值计算.结果发现阶梯量子阱的阱宽Lw、阶梯垒宽Lb、阶梯垒的掺杂浓度x的减小将提高体系的吸收系数.而且,随着Lw,Lb和x减小,吸收光子的能量有明显的蓝移,总吸收系数的半宽度及饱和吸收强度均减小.计算获得的部分结果与最近的实验观察完全一致.     

有强内电场的GaN-基阶梯量子阱中的线性与非线性光吸收（英文）

采用密度矩阵方法,考察了带强内建电场GaN-基阶梯量子阱中的线性与非线性光吸收系数.基于能量依赖的有效质量方法,在考虑了带的非抛物性情况下,推导了结构中的精确解析的电子本征态,给出了系统中简单解析的线性与非线性光吸收系数表达式.以AlN/GaN/AlxGa1-xN/AlN阶梯量子阱为例进行了数值计算.结果发现阶梯量子阱的阱宽Lw、阶梯垒宽Lb、阶梯垒的掺杂浓度x的减小将提高体系的吸收系数.而且,随着Lw,Lb和x减小,吸收光子的能量有明显的蓝移,总吸收系数的半宽度及饱和吸收强度均减小.计算获得的部分结果与最近的实验观察完全一致.     

Hg1-xCdxTe/CdTe/Si薄膜厚度测试方法的研究

在分子束外延生长高质量的CdTe/Si复合衬底上,分别通过MBE和LPE技术成功地研制出Hg1-xCdxTe/CdTe/Si红外探测器所需的重要红外半导体材料。利用傅里叶变换红外光谱仪对Hg1-xCdxTe/CdTe/Si红外半导体材料的红外透射光谱进行测试分析且计算薄膜厚度,并配合扫描电子显微镜对其厚度计算分析进行校正,最终获得一种无破坏、无污染、快捷方便的多层膜厚度测试方法。     

内建电场对应变多量子阱带阶的影响

隧穿电流的大小依赖于带阶的大小。内建电场会改变多量子阱的结构 ,使其由方阱变为斜阱 ,导致其带阶发生改变。本文定量地给出了由内建电场导致的价带阶变化及其斜率。对沿任意方向生长的立方超晶格系统 ,当其特征厚度小于临界值 (欠临界系统 )时 ,给出了内建电场与应变的定量关系。针对不同的量子阱系统 ,当生长方向沿着 [111]方向时 ,计算了三种类型、2 1种组分、由内建电场引起的价带阶变化量。所有结果在线性领域及没有相变的情况下都是适用的。     

Cd1-xMnxTe/CdTe抛物量子阱内激子结合能的研究

在有效质量近似下采用变分法计算了Cd1-xMnxTe/CdTe抛物量子阱内不同Mn组分下激子的结合能,给出了结合能在不同Mn组分下随阱宽、垒宽、外加电场的变化情况。 结果表明:激子结合能是阱宽的一个非单调函数，随阱宽的变化呈现先增加后减小的趋势，而且随着Mn组分增大, 激子结合能达到最大值的阱宽相应变小, 这与材料的带隙改变有关;激子结合能随垒宽逐渐增大然后趋于稳定值，这与波函数向垒中的渗透有关；在一定范围内电场对激子结合能的影响很小,而且Mn组分越大对激子结合能影响越小，但电场强度较大时会破坏激子效应。计算结果可以对基于半导体抛物形量子阱发光器件设计制作提供一些理论依据。     

双单量子阱材料的调制光谱研究

本文采用光调制光谱方法测量了GaAs/Ga_(1-x)Al_xAs双单量子阱材料的光调制反射光谱(PR),同时观察到了二个单量子阱中的带间激子跃迁,采用电场调制线形可以拟合出激子跃迁的能量,与简单的有限方势阱模型的计算结果符合。并且由调制反射光谱中的Franz-Keldysh振荡,计算得到材料表面内建电场约为29.3kV/cm。     

GaN基量子阱激子结合能和激子光跃迁强度

采用变分法,计算了GaN基量子阱中激子结合能和激子光跃选强度。计算结果表明,GaN基量子阱中激子结合能为10－55meV,大于体材料中激子结合能,并随着阱宽减小而增加,在临界阱宽处达到最大。结间带阶同样对激子结合能有着较大的影响,更大带阶对应更大的结合能。同时量子限制效应增加了电子空穴波函数空间重叠,因此加强了激子光跃迁振子强度,导致GaN/AlN量子阱中激子光吸收明显强于体材料中激子光吸收。     

GaAs/GaAlAs量子阱在电场作用下光电流谱的研究

我们用室温和低温下电场下的光电流谱研究了 GaAs/AlGaAs多量子阱p-i-n 二极管的量子限制斯塔克效应.侧面光照下测量的光电流谱明显地反映出轻重空穴激子峰的偏振效应.对光电流谱和光致发光激发光谱进行对比发现,外加电场不仅影响光吸收,也影响多量子阱中光生载流子的漂移过程.光电流谱的线形用 P~-/n~+结的耗尽模型进行了分析,并计入了入射光强度在光传播过程中由于产生吸收跃迁而发生的衰减.光电流谱峰与激发光谱峰的斯塔克位移提供了多量子阱中电场分布的信息,并证明了耗尽区模型的正确性.     

GaInAsP /InP阶梯量子阱中氢施主杂质束缚能

在有效质量近似下,利用变分法对GaxIn1-xAsyP1-y /InP阶梯量子阱中氢施主杂质束缚能进行了理论计算,并研究了外加电场和阶梯阱的高度对阶梯量子阱中氢施主杂质电子态特性的影响。计算结果显示当施主杂质位于阶梯量子阱的中心时,束缚能达到最大值;外加电场使得电子波函数从阱中心偏移,引起束缚能的非对称分布;Ga 与 As组分的变化使得阶梯阱的势能高度发生变化,从而明显的影响阱中氢杂质束缚能。计算结果对一些基于半导体阶梯型量子阱的光电子器件的设计制作有一定的指导意义。     

内建电场对应变多量子阱带阶的影响

隧穿电流的大小依赖于带阶的大小.内建电场会改变多量子阱的结构,使其由方阱变为斜阱,导致其带阶发生改变.本文定量地给出了由内建电场导致的价带阶变化及其斜率.对沿任意方向生长的立方超晶格系统,当其特征厚度小于临界值(欠临界系统)时,给出了内建电场与应变的定量关系.针对不同的量子阱系统,当生长方向沿着[111]方向时,计算了三种类型、21种组分、由内建电场引起的价带阶变化量.所有结果在线性领域及没有相变的情况下都是适用的.     

Transforming Common III–V and II–VI Semiconductor Compounds into Topological Heterostructures: The Case of CdTe/InSb Superlattices

Currently, known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. It is shown via first‐principle calculations that a heterovalent superlattice made of common semiconductor building blocks can transform its non‐TI components into a topological nanostructure, illustrated by III–V/II–VI superlattice InSb/CdTe. The heterovalent nature of such interfaces sets up, in the absence of interfacial atomic exchange, a natural internal electric field that along with the quantum confinement leads to band inversion, transforming these semiconductors into a topological phase while also forming a giant Rashba spin splitting. The relationship between the interfacial stability and the topological transition is revealed, finding a “window of opportunity” where both conditions can be optimized. Once a critical InSb layer thickness above ≈1.5 nm is reached, both [111] and [100] superlattices have a relative energy of 1.7–9.5 meV Å^–2, higher than that of the atomically exchanged interface and an excitation gap up to ≈150 meV, affording room‐temperature quantum spin Hall effect in semiconductor superlattices. The understanding gained from this study could broaden the current, rather restricted repertoire of functionalities available from individual compounds by creating next‐generation superstructured functional materials.     

Tunable infrared modulator and switch using Stark shift in stepquantum wells

A tunable infrared modulator and/or switch using intersubband Stark shift in a step quantum well is discussed. The device utilizes the intersubband absorption and the large change of separation between energy levels in the step quantum well under an applied electric field. The incident infrared beam on the device is either absorbed or transmitted depending on the energy separation of the levels, and thus the modulation can be achieved by adjusting the energy levels with an applied electric field. The extremely short lifetime of the intersubband transition makes this modulator suitable for application in high-speed long-wavelength optical communications     

Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field

Analytic forms of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained for general asymmetric quantum well systems using the density matrix formalism, taking into account the intrasubband relaxation. Based on this model, we calculate the electric field dependence of the linear and the third-order nonlinear intersubband optical absorption coefficients of a semiconductor quantum well. The energy of the peak optical intersubband absorption is around 100 meV (wavelength is 12.4 μm). Thus, electrooptical modulators and photodetectors in the infrared regime can be built based on the physical mechanisms discussed here. The contributors to the nonlinear absorption coefficient due to the electric field include 1) the matrix element variation and 2) the energy shifts. Numerical results are illustrated.     

基于非厄米和拓扑效应的光场调控机制与光学器件研究进展（特邀）

光的传输与调控是光子集成器件发展的重要基础,光子晶体作为一种新型的光学功能材料,在光操控上有着巨大的潜力。与传统的基于实空间光场叠加原理和倒空间固体能带色散理论的光场调控思想不同,受凝聚态物理中拓扑相概念启发,通过在光子晶体的能带系统研究中引入拓扑相能够提供新颖的光场调控机制和丰富的输运以及光操控性质,如高维度的光场调控等。文中分别从非厄米光子体系和拓扑光子学体系两个方面综述了近年来笔者所在的课题组所取得的研究成果。首先,回顾了光学拓扑研究和光学非厄米研究的背景;其次,介绍了在高阶光子拓扑绝缘体、高阶量子自旋霍尔效应、光子晶体的拓扑场局域以及非厄米体系拓扑光传输等领域的研究进展;最后,对研究结果在相关领域如光量子计算、光通信等的应用发展趋势进行了总结与展望。     

CdTe/CdS、CdTe/ZnS核壳结构半导体量子点制备及荧光特性

核壳半导体量子点材料因其在修复单量子点表面缺陷方面的特殊性能,极大地提高了量子点的光学性能而受到人们的研究。改进了CdTe核心的制作方法,使用小型三口瓶替代传统的小烧瓶作为反应容器,制备碲氢化钠,合成了不同核心尺寸、不同壳层厚度与不同壳层材料的10种CdTe/CdS、CdTe/ZnS核壳结构半导体量子点。对10种核壳结构半导体量子点材料进行紫外可见吸收光谱及荧光光谱测试,并分析其荧光特性。量子点在紫外可见波段的吸收光谱表明随着量子点尺寸的增大,吸收峰发生红移。通过实验结果与分析可推断出CdTe/CdS量子点荧光寿命和强度的不同是由于核心和壳层尺寸的不同量子点在I型和II型中相互转换;CdTe/ZnS的壳层厚度增加时,由于ZnS的壳层降低了核心外表的悬空键和表面缺陷态的数量,使电子空穴对复合机率加大,使得荧光峰位产生了红移。     

强激光场下非对称量子阱结构中子带间的跃迁

选取Al0.3Ga0.7As/GaAs的非对称双量子阱结构,在有效质量近似条件下计入电子-电子相互作用所产生的Hartree势,采用转移矩阵方法研究了外加强激光场和电场作用下非对称双量子阱结构中子带间的跃迁和光吸收性质,并且详细讨论了外场对跃迁和吸收的影响。结果发现,通过调节高频激光场和电场强度,非对称双量子阱中子带间的吸收峰将发生蓝移或红移,并且吸收峰峰值也随之发生改变,高频激光场和电场对器件的光学和电学性质具有重要的影响,对电子态的进一步调控具有重要的意义。     

正切平方势阱中光学吸收系数的研究

在量子力学框架内,利用正切平方势把电子的Schrodinger方程化为了超几何方程,并用超几何函数严格求解了电子的本征值和本征函数。利用量子力学中的密度矩阵算符理论导出了正切平方势阱中的线性与三阶非线性光学吸收系数的解析表达式。计算了该系统中的线性与非线性光学吸收系数的大小,讨论了影响吸收系数变化的因素。文章以典型的AlGaAs/GaAs 势阱为例作了数值计算,数值计算结果表明,势阱的形状和入射光强对光学吸收系数的变化有着重要的影响。     

Impact of CdTe/CdZnTe substrate resistivity on performancedegradation of long-wavelength n+-on-p HgCdTe infraredphotodiodes

For realizing HgCdTe focal plane arrays on alternate substrates (Si or GaAs), CdTe buffer layers are essential. Bulk CdTe/CdZnTe substrates are also used for LPE growth of HgCdTe. A model for the effect of the n-CdTe substrate resistivity on the quantum efficiency, η, and the dynamic resistance-area product, R_dA, of a n ⁺-on-p HgCdTe backside illuminated photodiode has been developed, taking into account the effect of the graded heterointerface between CdTe/CdZnTe and HgCdTe on the homojunction photodiode. The issue of how low the substrate/buffer layer resistivity can be, without degrading the performance of the photodiode, has been addressed. For low substrate resistivities, the R_dA can drop by about 50%, while the quantum efficiency decreases by about 5%. It has been found that as low as 2 Ω-cm for long wavelength IR photodiodes (cutoff wavelength 14 μm) is acceptable. To obtain the R_dA and η from the band profile, a linear approximation has been used in which the interface barrier region has a constant electric field, while the bulk of the epilayer has no electric field. General expressions have been derived for the R_dA and η in this two-region model. Our solutions are valid for both high and low electric fields, unlike previously derived solutions in the literature valid either in the one-region low-field case or the two-region, high-field approximation     

基于非对称量子阱的太赫兹波调制器

主要研究了一个特殊的GaAs/AlGaAs非对称量子阱中的线性和三阶非线性太赫兹波吸收系数和介质折射率的相对改变。首先利用量子力学中的密度矩阵算符理论和迭代方法导出了线性和三阶非线性光吸收系数和相对折射率改变的表达式,然后以典型的阶梯型量子阱材料为例做了数值计算。计算表明,基于泵浦光场和偏置电压控制的太赫兹波调制器不仅可以做太赫兹波开关,还可以灵活地调制太赫兹波信号的强度和相位,方便实用。     

On the band spectrum in <Emphasis Type="Italic">p</Emphasis>-type HgTe/CdHgTe heterostructures and its transformation under temperature variation

The magnetoabsorption and interband photoconductivity spectra of HgTe/CdHgTe quantum wells exhibiting p-type conductivity are studied at different temperatures. It is shown that, for a sample with a normal band structure, the long-wavelength edge of the spectra shifts to higher energies with temperature increase, indicating an increase of the band gap in the quantum well. For a sample with an inverted band structure, it is for the first time found that the long-wavelength cut-off shifts to lower energies due to the topological phase transition from the inverted band structure to the normal structure with temperature increase. The experimental data are in agreement with the results of theoretical band-structure calculations based on the Kane model.