铂钨含量对CoPtW永久磁性薄膜结构及磁性能的影响

研究了钴钨含量对CoPtW永久磁性薄膜结构及磁性能的影响。研究表明，P1 W的原子含量在10％-12％之间时对晶体的晶面间距影响较大，晶系发现变化。随着这一含量的增大，在样品表面垂直和平行磁场方向上的矫顽力差值变大。     

Influence of Magnetic Annealing on Properties of SmFe Thin Films

SmFe thin films were prepared by DC magietron sputtering at room temperature and 300 %. The influence of magnetic annealing temperature on the phase structure and magnetic properties was investigated. Results showed that thermal sputtering followed by a heat treatment process helped to obtain a structure with a relatively large fraction of SmFe2. Residual phases observed were α-Fe, Sm2O3, and unknown phases. During the annealing treatment, the intrinsic compressive stress in SmFe films was relieved and could become tensile at higher annealing temperatures. The degree of in-plane anisotropy weakened, and furthermore, the anisotropy transformed into out-of-plane anisotropy.     

Effect of Phosphor Incorporation on Magnetic Properties of Electrodeposited CoPtW Thin Films

The electrochemical behaviors of CoPtW(P) electrodeposition have been analyzed by means of cyclic voltammetry. Effect of hypophosphite concentration in the electrolyte on the alloy composition, crystalline structure and magnetic properties has been investigated. It is turned out that the intensity of [00.1] P.O in the XRD pattern of CoPtW(P) has been strengthened when the concentration of hypophosphite increased from 0 to 0.1 M. Parallel and perpendicular coercivity of electrodeposited CoPtW(P) reached a maximum when the hypophosphite concentration was 0.06 M, but the perpendicular magnetic anisotropy increased gradually with the increase of hypophosphite concentration. Moreover, saturation magnetization of the electrodeposited CoPtW(P) with more P content decreased when the films were exposed to the air. This can be explained by the fact that the hydrogen evolution would be favored thanks to an increase of hypophosphite concentration, which led to the acceleration of corruption speed.     

Cyclic Electrodeposition of Yb-Bi Thin Films

Recently ,Bihasattractedmuchattentionforap plicationsinvolvingfieldandcurrentsensingduetoitsextremelyhighmagnetoresistance (MR )relativetothosereportedforGMRandCMRmaterials .ThelargeMRofBiarisesfromitspeculiarelectronicstructure .Ithasasmallenergyoverlap (～38meV)betweentheLconductionandTholebands ,smalleffectivemasses(atthebandedge ,me=0 0 0 2m0 ) ,andhighmobil ities .Becauseoftheseproperties ,Bihasfrequentlybeenusedforquantumconfinementstudiesinquan tumwellandquantumwiregeometries[1] …     

Growth and Magnetic Properties of Sol-Gel Derived Co-Doped ZnO Thin Film

Zn1-xCoxO films were grown on glass by sol-gel spin coating process. A homogeneous and stable Zn1-xCoxO sol was prepared by dissolving zinc acetate dihydrate, cobalt acetate tetrahydrate and aluminium chloride hexahydrate as solutes in solution of isopropanol and monoethanolamine. The films were postheated and vacuum annealed, and investigated for c-axis preferred orientation and electromagnetic properties. Zn1-xCoxO films with different Co concentrations were oriented well along the c-axis, especially the Zn1-xCoxO film with 10% Co(atom fraction) was highly c-axis oriented. The transmittance spectra show that Zn1-xCoxO films occur d-d transition and sp-d exchange interaction between Co2 ions. The electrical resistivity of the films at 10% Co had the lowest value because the crystallite size became largest and the crystallinity of the c-axis was improved. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster was formed, and the ferromagnetism at room temperature appeared. The characteristics of the electrical resistivity and room temperature ferromagnetism of sol-gel derived Zn1-xCoxO films suggest a potential application of dilute magnetic semiconductor devices.     

溅射参数对SmCo/Cr薄膜铬底层晶面取向及磁学性能的影响

采用直流磁控溅射法制备SmCo／Cr薄膜磁记录材料，通过改变Cr底层制备过程中的功率、靶基距、溅射压强和溅射时间，得到了磁性能不同的SmCo／Cr薄膜。利用X射线衍射法对Cr底层晶面取向和磁控溅射参数之间的关系进行了研究，结果表明：如果改变溅射参数，使沉积cr原子获得较大的能量，则有利于Cr底层最终以(110)晶面择优取向。本实验中Cr底层以(110)晶面择优取向的最佳实验条件为：溅射功率在50～70w左右，靶基距为6cm，压强为0．5Pa，溅射时间为15min。利用振动样品磁强计(VSM)测定SmCo／Cr薄膜的磁学性能，结果表明，如果Cr底层能以(110)晶面择优取向，所得到的SmCo／Cr薄膜的磁学性能较好。     

在有机溶剂中电沉积Er-Co-Fe合金膜

利用循环伏安法和恒电位电解法研究了室温条件下在有机溶剂DMSO(二甲基亚砜)中Er-Co-Fe合金膜的电化学制备。实验结果表明:在0.1mol·L-1ErCl3-0.1mol·L-1FeCl2-0.1mol·L-1CoCl2-0.1mol·L-1LiClO4-DMSO体系中,当控制电位在-2.00V～-2.60V(vsSCE)范围内进行恒电位电解,可得到表面均匀、附着力强、有金属光泽的黑色非晶态Er-Co-Fe合金膜,其中铒的质量分数可达31.63%～43.15%。     

Morphology and Magnetic Properties of Electrodeposited Iron and Nickel Based Alloy Foils

An alternative to conventional process for the preparation of soft magnetic metal foils of Fe, Fe-Ni, Fe-Co and Fe-Ni-Co by electroforming was described. The microstructure and magnetic properties were observed. The results showed that the crystal size of the iron-based alloy foil is less than 10μm, while that of nickel-based alloy foil is about 2μm. Moreover, the electroformed Fe-Ni foil has better magnetic properties than the conventional milled permalloy 1J79 foil.     

Fabrication and Magnetic Properties of Highly Oriented ZnO:Eu Films by Sol-Gel Process

A series of Eu-doped ZnO films were prepared by a sol-gel method. Precursor and films were characterized by thermal analysis (TG-DTA), X-ray diffraction (XRD), scanning electron microscope (SEM), UV-vis spectra, as well as the magnetism measurement. The wurtzite structure of obtained films presents an extreme high c-orientation character. The film susceptibility resembles a Curie-Weiss behavior at high temperature, and presents an obvious enhancement at low temperature, indicating the presence of antiferromagnetic interactions in the Zn0.9Eu0.1O films.     

NdFeB永磁薄膜的制备方法及其研究进展

综述了NdFeB永磁薄膜的制备方法和原理;介绍了NdFeB永磁薄膜的研究进展;指出了NdFeB永磁薄膜存在的问题;并对NdFeB永磁薄膜未来的发展方向及应用前景进行了展望。     

MgO插层对FeN基复合膜的磁各向异性的影响

在FeN薄膜中不同位置引入较薄的MgO插层,研究其对FeN合金的磁各向异性能和界面电子结构的影响。结果表明,在FeN薄膜的上界面处插入MgO可以形成Fe-O轨道杂化,使得磁各向异性能（Keff）显著增加,有利于体系向垂直磁各向异性转变;但是,在FeN薄膜的下界面处插入MgO会破坏Cr/MgO间的晶格外延,使得Keff值下降,不利于实现垂直磁各向异性。     

电沉积工艺参数对软磁铁箔磁性能的影响

测试了电沉积溶液温度和阴极电流密度变化时电沉积铁箔的磁滞回线。通过铁箔的金相组织观察，电沉积过程的电化学行为及铁箔的EDAX分析，探讨了电沉积工艺参数对铁箔磁性能影响的内在原因。结果表明：阴极电流密度增大时，电成型铁箔的矫顽力增大，最大磁导率降低；电沉积溶液温度提高时，铁箔的矫顽力降低，磁导率增大；在650℃经过真空退火后的铁箔矫顽力降低，最大磁导率提高。     

硅业副产物SiCl_4资源化电沉积硅及其性能研究

以硅业副产物四氯化硅(SiCl_4)为溶解物,离子液体[BMIM]TF2N为溶剂,碳酸丙烯酯(PC)为支持电解质,采用三电极系统,用C-AFM方法研究[BMIM]TF2N与PC的质量比、电解液温度和沉积时间对阴极板生成物电学性质的影响,以及硅薄膜结构和表面形貌对其电学性质的影响。拉曼光谱结果证实沉积的硅薄膜是非晶态结构,在质量比为1:3的常温电解液中沉积1h制备出的硅薄膜具有很好的均匀性和电学性质。     

硅薄膜的热丝法淀积

系统地研究了热丝化学气相沉积技术中沉积气压、气体流量、钨丝温度、衬底温度对硅薄膜的结构、生长速率和光率和光电性能的影响。通过优化各工艺参数，成功地制备出光暗电导比达１０＾４的非晶硅薄膜和晶粒尺寸达微米量级的晶相良好的多晶硅薄膜。     

酸性条件下水浴沉积时间对硫化镉薄膜特性的影响

基于化学水浴法,以硫代乙酰胺为硫源、氯化镉为镉源、尿素为缓冲剂,在酸性条件下制备了CdS薄膜。采用台阶仪、X射线衍射仪、扫描电镜和紫外/可见光分光光度计,研究了酸性条件下化学水浴沉积时间对硫化镉薄膜厚度、结构、形貌和光学特性的影响。结果表明,沉积所得的CdS薄膜为六角纤维锌矿结构。随着沉积时间的延长,薄膜厚度和晶粒尺寸随之增大,带隙随之减小。当沉积温度为80℃,沉积时间为30min时,CdS薄膜可见光波段平均透过率接近80%。     

磁控溅射类金刚石碳膜的显微硬度

采用显微硬度测试方法,研究在单晶硅衬底上沉积厚度仅为0.09-0.56μm的磁控溅射类金刚石碳膜的力学性能。结果表明,溅射碳膜的硬度随溅射工艺参数呈规律性变化,且可以和碳膜的类金刚石性质以及碳膜结构的SP³和SP²成分的变化相联系。采用Johnson复合硬度模型进行的分析表明,溅射碳膜的真实硬度在HV6000-6600之间,比天然金刚石的硬度略低。溅射类金刚石碳膜具有明显的压痕尺寸效应(ISE),其指数约为m=1.9。     

CVD金刚石薄膜的织构分析

采用极图和取向分布函数法分析CVD金刚石薄膜的不同织构.分析表明,高的多重性因子使得{110}面织构有更高的出现概率.具体分析了{221}面织构出现的孪生机制,强调了织构与性能关系研究的重要性,并推荐使用先进织构分析手段.     

CSP工艺冷轧薄板盐浴退火再结晶实验

 研究了以CSP工艺热轧板卷为原料的冷轧薄板在盐浴退火过程中的再结晶行为,通过显微组织、显微硬度及电子背散射衍射技术观察、分析揭示了再结晶的规律,结果表明,CSP工艺冷轧薄板经盐浴退火后的再结晶组织为等轴状晶粒;在相同温度下盐浴退火,冷轧压下率较大时,完成再结晶所需的保温时间较短,再结晶晶粒细小。     

纳米WO_3薄膜材料的制备及掺杂改性研究

对制备纳米WO3薄膜的主要方法进行综合分析比较,综述通过掺杂不同元素对纳米WO3薄膜性质的影响,并展望纳米WO3薄膜材料的发展前景。