Phonon drag of electrons in Ag<Subscript>2</Subscript>S

The temperature dependences of the heat-conductivity coefficient χ and the thermopower 6h of Ag₂S are investigated in the range of 4.2–300 K. It is found that the value of 6h sharply increases (6h ∞ T^-3) with decreasing T at T < 100 K and passes through a maximum at 16–18 K. The heat-conductivity coefficient passes through a maximum at ≈30 K. The sharp increase in 6h is found to be caused by the effect of long-wavelength-phonon drag of electrons. It is shown that the shift of the 6h and χ peaks, as well as the temperature dependence of the phonon thermopower 6h_ph ∞ T^-3, agrees with the Herring theory.     

Temperature dependence of the band gap of FeIn<Subscript>2</Subscript>S<Subscript>4</Subscript> single crystals

Single crystals of the FeIn₂S₄ ternary compound are grown by the Bridgman method. The composition and structure of the crystals are established. The transmittance spectra of the crystals in the region of the fundamental absorption edge are studied in the temperature range of T = 20–300 K. The band gap E _g and its temperature dependence E _g (T) are determined from the transmittance spectra. It is shown that the shape of the dependence E _g (T) is typical of complex compounds.     

Magnetic properties of the FeIn<Subscript>2</Subscript>S<Subscript>4</Subscript> ternary-compound crystals

Crystals of the ternary compound FeIn₂S₄ are grown by directional crystallization of a melt (the horizontal Bridgman method). Composition of the crystals and their crystal structure are determined. Magnetic properties of the FeIn₂S₄ crystals are studied in the temperature range 4–310 K in magnetic fields of 0–140 kOe. It is shown that the crystals under study are paramagnets up to ∼12 K and their specific magnetic moment monotonically increases with decreasing temperature. The antiferromagnetic character of indirect interactions between Fe²⁺ cations is established. The most probable causes and the mechanism of the formation of the magnetic state in the FeIn₂S₄ crystals are discussed.     

Negative magnetoresistance in silicon with manganese-atom complexes [Mn]<Subscript>4</Subscript>

It is experimentally shown that an anomalously high negative magnetoresistance is observed in silicon with manganese-atom complexes [Mn]₄ at room temperature. It is established that the negative magnetoresistance has the largest value at T = 230–240 K, while its value decreases with temperature, and the inversion of the magnetoresistance sign takes place at T < 170 K; i.e., the positive magnetoresistance is observed. It is established that the negative magnetoresistance and its temperature dependence are substantially affected by the intensity of both integrated and monochromatic light.     

Thermoelectric Properties of the One-Dimensional Cobalt Oxide CaCo<Subscript>2</Subscript>O<Subscript>4</Subscript>

In this work we studied the crystal structure and physical properties of the new one-dimensional cobalt oxide CaCo₂O_4+δ . The CaCo₂O_4+δ phase crystallizes as a calcium-ferrite-type structure, which consists of a corner- and edge-shared CoO₆ octahedron network including one-dimensional double chains. The specific-heat Sommerfeld constant γ was found to be 4.48(7) mJ/mol K². This result suggests that the CaCo₂O_4+δ phase has a finite density of states at the Fermi level. Metallic temperature dependence of the Seebeck coefficient S with a large thermoelectric power (S = 151 μV/K at 387 K) was observed. The origin of the large thermoelectric power may be attributed to the quasi one-dimensional character of the energy band near the valence band maximum in CaCo₂O_4+δ .     

Thermoelectric Properties of <Emphasis Type="Italic">p</Emphasis>-Type Mg<Subscript>2.00</Subscript>Si<Subscript>0.25</Subscript>Sn<Subscript>0.75</Subscript> with Li and Ag Double Doping

Mg₂Si_1−x Sn _x -system solid solutions are ecofriendly semiconductors that are promising materials for thermoelectric generators in the middle temperature range. To produce a thermoelectric device, high-performance p- and n-type materials must be balanced. In this paper, p-type Mg_2.00Si_0.25Sn_0.75 with Li and Ag double doping was prepared by the liquid–solid reaction method and hot-pressing. Effects of Li and Ag double doping on thermoelectric properties were investigated in the temperature range from room temperature to 850 K. All sintered compacts were identified as single-phase solid solutions with anti-fluorite structure. The carrier concentration increased with the double doping. The temperature dependence of resistivity of the double-doped samples was similar to that of a metal. The seebeck coefficient increased with temperature to a maximum value and then decreased in the intrinsic region. Thermal conductivity decreased linearly with increasing temperature, reaching a minimum near the intrinsic region, and then increased rapidly because of the contribution of the bipolar component. The dimensionless figure of merit reached 0.32 at 610 K for Mg_2.00Si_0.25Sn_0.75 double-doped with Li-5000 ppm and Ag-20000 ppm.     

Band gap of CdTe and Cd<Subscript>0.9</Subscript>Zn<Subscript>0.1</Subscript>Te crystals

The band gap E _g of the CdTe and Cd_0.9Zn_0.1Te crystals and its temperature dependence are determined by optical methods. This is motivated by considerable contradictoriness of the published data, which hampers the interpretation and calculation of characteristics of detectors of X-ray and γ radiation based on these materials (E _g = 1.39–1.54 and 1.51–1.6 eV for CdTe and Cd_0.9Zn_0.1Te, respectively). The used procedure of determination of E _g is analyzed from the viewpoint of the influence of the factors leading to inaccuracies in determination of its value. The measurements are performed for well-purified high-quality samples. The acquired data for CdTe (E _g = 1.47–1.48 eV) and Cd_0.9Zn_0.1Te (E _g = 1.52–1.53 eV) at room temperature substantially narrow the range of accurate determination of E _g.     

Thermoelectric Properties of Co<Subscript>4</Subscript>Sb<Subscript>12</Subscript> Skutterudite Materials with Partial In Filling and Excess In Additions

The properties of Co₄Sb₁₂ with various In additions were studied. X-ray diffraction revealed the presence of the pure δ-phase of In_0.16Co₄Sb₁₂, whereas impurity phases (γ-CoSb₂ and InSb) appeared for x = 0.25, 0.40, 0.80, and 1.20. The homogeneity and morphology of the samples were observed by Seebeck microprobe and scanning electron microscopy, respectively. All the quenched ingots from which the studied samples were cut were inhomogeneous in the axial direction. The temperature dependence of the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ) was measured from room temperature up to 673 K. The Seebeck coefficient of all In-added Co₄Sb₁₂ materials was negative. When the filler concentration increases, the Seebeck coefficient decreases. The samples with In additions above the filling limit (x = 0.22) show an even lower Seebeck coefficient due to the formation of secondary phases: InSb and CoSb₂. The temperature variation of the electrical conductivity is semiconductor-like. The thermal conductivity of all the samples decreases with temperature. The central region of the In_0.4Co₄Sb₁₂ ingot shows the lowest thermal conductivity, probably due to the combined effect of (a) rattling due to maximum filling and (b) the presence of a small amount of fine-dispersed secondary phases at the grain boundaries. Thus, regardless of the non-single-phase morphology, a promising ZT (S ² σT/κ) value of 0.96 at 673 K has been obtained with an In addition above the filling limit.     

Thermoelectric Properties of Zr<Subscript>3</Subscript>Mn<Subscript>4</Subscript>Si<Subscript>6</Subscript> and TiMnSi<Subscript>2</Subscript>

The Seebeck coefficient, electrical resistivity, and thermal conductivity of Zr₃Mn₄Si₆ and TiMnSi₂ were studied. The crystal lattices of these compounds contain relatively large open spaces, and, therefore, they have fairly low thermal conductivities (8.26 Wm⁻¹ K⁻¹ and 6.63 Wm⁻¹ K⁻¹, respectively) at room temperature. Their dimensionless figures of merit ZT were found to be 1.92 × 10⁻³ (at 1200 K) and 2.76 × 10⁻³ (at 900 K), respectively. The good electrical conductivities and low Seebeck coefficients might possibly be due to the fact that the distance between silicon atoms in these compounds is shorter than that in pure semiconductive silicon.     

Current-voltage characteristics of MnGa<Subscript>2</Subscript>Se<Subscript>4</Subscript> single crystals

The current-voltage characteristics of MnGa₂Se₄ single crystals have been investigated. The measurements were performed in the range of electric fields from the level at which the Ohm law is satisfied to 10 V/cm, and in the temperature range 300–400 K. The data obtained are interpreted within the theory of injection-contact phenomena and the theory of field ionization of traps due to the Poole-Frenkel effect.     

Crystallization ability and optical and electrical properties of Ge<Subscript>10</Subscript>(Se-Te)<Subscript>90</Subscript> and Ge<Subscript>30</Subscript>(Se-Te)<Subscript>70</Subscript> chalcogenide glassy semiconductors

Chalcogenide glassy semiconductors of the ternary system Ge-Se-Te along the Ge₁₀(Se-Te)₉₀ and Ge₃₀(Se-Te)₇₀ joins have been synthesized. The crystallization ability, near-IR transmission spectra, and temperature dependence of the electrical conductivity of the alloys obtained have been studied. It is shown that chalcogenide glassy semiconductors along the Ge₁₀(Se-Te)₉₀ join have a lower softening and crystallization points compared with semiconductors belonging to the Ge₃₀(Se-Te)₇₀ join. A change in the electrical conductivity of samples by several orders of magnitude occurs upon a phase transition from the glassy to the crystalline state. Compositions of chalcogenide glassy semiconductors in the Ge-Se-Te system are found, which have α < 1 cm⁻¹ absorption coefficient at wavelengths of λ ≈ 1.5 μm and exhibit a thermally induced phase transition from the glassy to the crystalline state.     

Exfoliation and blistering of Cd<Subscript>0.96</Subscript>Zn<Subscript>0.04</Subscript>Te substrates by ion implantation

As part of a series of wafer bonding experiments, the exfoliation/blistering of ion-implanted Cd_0.96Zn_0.04Te substrates was investigated as a function of postimplantation annealing conditions. (211) Cd_0.96Zn_0.04Te samples were implanted either with hydrogen (5×10¹⁶ cm⁻²; 40–200 keV) or co-implanted with boron (1×10¹⁵ cm⁻²; 147 keV) and hydrogen (1–5×10¹⁶ cm⁻²; 40 keV) at intended implant temperatures of 253 K or 77 K. Silicon reference samples were simultaneously co-implanted. The change in the implant profile after annealing at low temperatures (<300°C) was monitored using high-resolution x-ray diffraction, atomic force microscopy (AFM), and optical microscopy. The samples implanted at the higher temperature did not show any evidence of blistering after annealing, although there was evidence of sample heating above 253 K during the implant. The samples implanted at 77 K blistered at temperatures ranging from 150°C to 300°C, depending on the hydrogen implant dose and the presence of the boron co-implant. The production of blisters under different implant and annealing conditions is consistent with nucleation of subsurface defects at lower temperature, followed by blistering/exfoliation at higher temperature. The surface roughness remained comparable to that of the as-implanted sample after the lower temperature anneal sequence, so this defect nucleation step is consistent with a wafer bond annealing step prior to exfoliation. Higher temperature anneals lead to exfoliation of all samples implanted at 77 K, although the blistering temperature (150–300°C) was a strong function of the implant conditions. The exfoliated layer thickness was 330 nm, in good agreement with the projected range. The “optimum” conditions based on our experimental data showed that implanting CdZnTe with H⁺ at 77 K and a dose of 5×10¹⁶/cm² is compatible with developing high interfacial energy at the bonded interface during a low-temperature (150°C) anneal followed by layer exfoliation at higher (300°C) temperature.     

Memory Switching Characteristics in Amorphous Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript> Films

Ga₂Se₃ films were deposited by the thermal evaporation of the bulk material onto pyrographite substrates under vacuum. The I–V characteristic curves were found to be typical for a memory switch. They exhibited a transition from an ohmic region in the lower-field region to a non-ohmic region in the high-field region in the preswitching region, which has been explained by the Poole–Frenkel effect. The temperature dependence of the resistance in the ohmic region was found to be that of a thermally activated process. It was also found that the mean value of the switching voltage increased linearly with increasing film thickness in the range from 291 nm to 516 nm, while it decreased exponentially with increasing temperature in the range from 298 K to 393 K. The results were explained in accordance with the electrothermal model for the switching process.     

Charge carrier transport in Ge<Subscript>20</Subscript>As<Subscript>20</Subscript>S<Subscript>60</Subscript> chalcogenide semiconductor films

Charge-carrier transport in Ge₂₀As₂₀S₆₀ films has been studied using the transit time method under low-injection conditions at room temperature. It was found that drift mobilities of electrons and holes in Ge₂₀As₂₀S₆₀ films are close to each other, i.e., μ _e ≈ μ _h ≈ 2 × 10⁻³ cm² V⁻¹ s⁻¹ at T = 295 K and F = 5 × 10⁴ V/cm. It was shown that the time dependence of the photocurrent during carrier drift and the voltage dependence of the drift mobility allowed the use of the concept of anomalous dispersive transport. Experimental data were explained using the model of transport controlled by carrier trapping by localized states with energy distribution near conduction and valence band edges described by the exponential law with a characteristic energy of ∼0.05 eV.     

Effect of copper doping on kinetic coefficients and their anisotropy in PbSb<Subscript>2</Subscript>Te<Subscript>4</Subscript>

In anisotropic PbSb₂Te₄ and PbSb₂Te₄:Cu single crystals, nine main independent components of the Hall, electrical-conductivity, thermopower, and Nernst-Ettingshausen effects and their anisotropy in the range 77–450 K have been studied. PbSb₂Te₄ single crystals exhibit a high hole concentration (p ≈ 3 × 10²⁰ cm⁻³). Copper exhibits a donor effect and significantly (approximately by a factor of 2) reduces the hole concentration in PbSb₂Te₄. The temperature dependences of the kinetic coefficients, except for the Hall effect, have a form typical of the one-band model. The significant anisotropy of the Hall coefficient R ₁₂₃/R ₃₂₁ ≈ 2 at low temperatures corresponds to the multi-ellipsoid model of the energy spectrum of holes in PbSb₂Te₄. An important feature of the data on transport phenomena is the high thermopower anisotropy (ΔS ≈ 60–75 μV/K) in the mixed conductivity region caused by the mixed scattering mechanism. Data on the anisotropy of the transverse Nernst-Ettingshausen effect confirm the mixed mechanism of hole scattering; in the cleavage plane, scattering at acoustic phonons dominates, while in the trigonal axis direction, impurity scattering appears significant. Doping with copper enhances the role of impurity scattering in the direction of the trigonal axis c ₃; as a result, two components of the Nernst-Ettingshausen tensor Q ₃₂₁ and Q ₁₃₂ in the PbSb₂Te₄:Cu single crystal are positive at low temperatures, whereas, in the undoped crystal, only the Q ₃₂₁ component is positive.     

Pressure dependence of intersubband transitions in HgTe/Hg<Subscript>0.3</Subscript>Cd<Subscript>0.7</Subscript>Te superlattices

The optical absorption coefficient of HgTe/Hg_0.3Cd_0.7Te superlattices (SLs) and its pressure dependence has been investigated at hydrostatic pressures up to 30 kbar at room temperature. The corresponding intersubband transition energies result from a comparison of experimental and theoretical absorption coefficients. The latter is based on the band structure, which is calculated using Kane’s four-band (8×8 k · p) model together with the envelope function approximation. The experimental linear pressure coefficients of the H1 — E1 and H1 — L1 intersubband transitions are in good agreement with the theoretical values, e.g., 7.15±0.3 meV/kbar and 6.2±0.3 meV/kbar compared to 7.4 and 6.4 meV/kbar, respectively. this is in stark contrast to the pressure dependence of ≤1 meV/kbar of the photoluminescence (PL) peaks of a similar SL reported in the literature. Consequently, we conclude that the reported PL peaks are not due to intersubband transitions and that the k · p model correctly reproduces the electronic band structure and its pressure dependence of HgTe/Hg_1−xCd_xTe SLs.     

Thermoelectric Properties of NdGd<Subscript>1+<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>3</Subscript> Prepared by CS<Subscript>2</Subscript> Sulfurization

Ternary rare-earth sulfides NdGd_1+x S₃, where 0 ≤ x ≤ 0.08, were prepared by sulfurizing Ln₂O₃ (Ln = Nd, Gd) with CS₂ gas, followed by reaction sintering. The sintered samples have full density and homogeneous compositions. The Seebeck coefficient, electrical resistivity, and thermal conductivity were measured over the temperature range of 300 K to 950 K. All the sintered samples exhibit a negative Seebeck coefficient. The magnitude of the Seebeck coefficient and the electrical resistivity decrease systematically with increasing Gd content. The thermal conductivity of all the sintered samples is less than 1.9 W K⁻¹ m⁻¹. The highest figure of merit ZT of 0.51 was found in NdGd_1.02S₃ at 950 K.     

Magnetoresistance and magnetization studies of the layered magnanite system La<Subscript>1.2</Subscript>Ca<Subscript>1.8</Subscript>Mn<Subscript>2−x</Subscript>Ru<Subscript>x</Subscript>O<Subscript>7</Subscript> (0 ≤ x ≤ 1)

We report here the results of magnetotransport and electrical resistivity (ρ) measurements in the temperature range of 4.2–320 K and in the presence of magnetic fields up to 10 T on the Ru-doped, bilayered manganite system, La_1.2Ca_1.8Mn_2−xRu_xO₇ (0≤x≤1). We find that the Ru doping affects the magnetotransport properties considerably. The ρ versus H data were analyzed by fitting the data to the power-law equation, ρ = ρ₀ − αHⁿ. The isothermal magnetoresistance (MR) versus H curves taken up to ± 10 T are highly symmetrical, and their curvature changes from concave up to concave down as the temperature increases. The MR, defined as [ρ(H) − ρ(0)]/ρ(0), is found to increase with Ru doping from 58% to 64% up to x=0.1 and to decrease to 45% for the x=1 sample at 10 K. Analysis of the ρ-T data below 30 K shows that, at low temperature, the system behaves like a disordered metal.     

Thermoelectric Properties of Layer-Antiferromagnet CuCrS<Subscript>2</Subscript>

We have performed a detailed study of the electrical and thermal conductivities and thermoelectric power behavior of an antiferromagnetic-layer compound of chromium, CuCrS₂, from 15 K to 300 K. Unlike previous studies, we find noninsulating properties and sensitive dependence on the preparation method, the microstructure, and the flaky texture formed in polycrystalline samples after extended sintering at high temperatures. Flakes are found to be metallic, with strong localization effects in the conductivity on cooling to low temperatures. The antiferromagnetic transition temperature T _N (=40 K) remains essentially unaffected. The Seebeck coefficient is found to be in the range of 150 μV/K to 450 μV/K, which is exceptionally large, and becomes temperature independent at high temperatures, even for specimens with low resistivity values of 5 mΩ cm to 200 mΩ cm. We find the thermal conductivity κ to be low, viz. 5 mW/K cm to 30 mW/K cm. This can be attributed mostly to the dominance of lattice conduction over electronic conduction. The value of κ is further reduced by disorder in Cu occupancy in the quenched phase. We also observe an unusually strong dip in κ at T _N, which is probably due to strong magnetocrystalline coupling in these compounds. Finally we discuss the properties of CuCrS₂ as a heavily doped Kondo-like insulator in its paramagnetic phase. The combination of the electronic properties observed in CuCrS₂ makes it a potential candidate for various thermoelectric applications.     

Growth and doping of SiC-thin films on low-stress,amorphous Si<Subscript>3</Subscript>N<Subscript>4</Subscript>/Si substrates for robust microelectromechanical systems applications

The N₂-doped 3C-SiC thin films have been grown by low-pressure, chemical vapor deposition (LPCVD) on amorphous Si₃N₄/p-Si (111) substrates using the single, organosilane-precursor trimethylsilane [(CH₃)₃SiH]. The effects of N₂ flow rate and growth temperature on the electrical properties of SiC films were investigated by Hall-effect measurements. The electron-carrier concentration is between 10¹⁷–10¹⁸/cm³. The lowest resistivities at 400 K and 300 K are 1.12×10⁻² and 1.18×10⁻¹ cm, respectively. The corresponding sheet resistances are 75.02 Ω/□ and 790.36 Ω/□. The SiC film structure was studied by x-ray diffraction. The 3C-SiC films oriented in the 〈111〉 direction with a 2ϑ peak at 35.5° and line widths between 0.18–0.25° were obtained. The SiC/Si₃N₄ interface is very smooth and free of voids. The fabrication of microelectromechanical (MEMS) structures incorporating the SiC films is discussed.