声表面波声光移频器的工艺与实验研究

在微型光学陀螺仪中，声表面波声光移频器是实现系统闭环控制的核心执行器件。本文在理论分析与设计的基础上，以Ｋ８玻璃为基片，采用相应工艺成功地研制出声表面波声光移频器样片。经测试，其主要技术指标已初步满足微型光学陀螺仪的设计要求     

利用声光差频抑制集成光学陀螺背散噪声研究

研究了利用两个声光移频器间的差频抑制谐振式集成光学陀螺中的背向散射噪声.测试了声光移频器的输出特性,结果表明声光移频器输出功率随调制频率变化.测试并说明了两路声光移频器的功率不平衡会影响环形谐振器的谐振曲线深度和陀螺解调曲线的斜率,并最终导致陀螺的测量误差.实验中通过补偿声光移频器的输出功率,有效地克服了声光移频器功率带宽的影响,陀螺零漂从补偿前的0.28 mV降低为0.095 mV.     

激光多普勒移频特性研究

为了提高激光多普勒测速系统的性能,增强系统与应用场景适配性,文中对比电光和声光两种主要移频器件的特点,从器件移频原理出发,提出了简化频率变换关系的分析方法,从理论上研究激光多普勒测速系统中两种器件产生的移频特性,搭建铌酸锂电光调制和声光移频全光纤激光测速系统链路,将测试频率特征与理论特征进行对比研究,提出一种新型声电混合调制激光多普勒测速系统。结果表明,该新型系统兼具声光移频测速系统可测量运动目标运动方向、运动速度,完成电光调制测速系统多频率校正的特点,频率测量相对误差较小,动态范围大。通过研究两种移频方式对频率特性,为设计高性能激光多普勒测速系统提供了理论和实验支撑。     

声光器件的动态特性及其对激光测速的影响

在光电混合反馈激光测速系统(OEHF—LDA)和声光扫描激光测速系统(AOS—LDA)中，起光学频移作用的声光调制器和控制测量位置的声光偏转器均处于变频工作模式，因此声光器件的动态特性对系统的性能具有重要的影响。该文从理论分析、数值计算和实验研究入手，具体讨论了声光器件的动态响应特性，它可用具有纯滞后的一阶非周期环节来表征，并深入分析了声光器件的滞后特性对变频光学频移LDA系统的影响，最后提出了对变频声光器件调节的基本要求。     

光纤缺陷定位检测用声光偏转器

本文介绍一种新型声光偏转器——光纤缺陷定位检测用声光偏转器.它是为适应先导纤维的研制工作提出来的.器件亦可用于近红外光的激光扫描、调制或移频.器件采用TeO_2晶体作声光介质,其主要性能为:在工作光波长1.32μm处偏转角>5°,峰值衍射效率～50%(在632.8nm He-Ne激光下为80%),响应时间≤300ns,配合驱动电源可延时0.2—800μs,脉宽3—300μs.     

直接数字频率合成在声光移频器中的应用

直接数字频率是一种新兴的电子技术,已广泛应用于雷达以及和 ,由于应用在惯性技术中的声光移频器对其控制电路提出了很高的要求,传统的技术难以实现。因此,文章介绍了一种以技术为核心的新型控制方法,它将声光移频器的要求与先进的数字技术结合起来,大大提高了控制系统的精度。     

基于声光调制器的光学锁相环He-Ne激光稳频方法研究

报道了一种基于声光调制器与光学锁相环相结合的高稳定度激光稳频方法,用于提高热稳频He-Ne激光器的频率稳定度和准确度。为了克服全内腔热稳频He-Ne激光精密调谐困难的缺点,发展了基于声光调制器两次移频的频率调谐光路,有效地消除声光调制器移频光束路径对衍射角θ的依赖。自行研制了具有高灵敏度与捕获带宽的光学锁相环系统,利用声光调制器的高频率响应特性实现热稳频He-Ne激光高速、准确的锁定。成功实现了热稳频He-Ne激光器偏频锁定至碘稳频HeNe激光器。实验结果表明,环路锁定后拍频频率波动在±0.2 Hz范围内,频率抖动的标准差为0.04。偏置频率为30 MHz时,系统在1 s和1 000 s积分时间的相对阿伦方差分别为3.3×10^-9和1.4×10^-12。系统锁定后,压缩后的拍频线宽小于2 kHz。该研究表明,采用基于声光调制器与光学锁相环相结合的激光稳频方法可以实现亚赫兹级的激光频差控制,通过将热稳频He-Ne激光器偏频锁定至高稳定度的参考激光源可以显著提升其频率稳定度和准确度。     

利用双晶体实现的低频保偏光纤声光移频器

该文介绍了一种低频保偏光纤声光移频器的设计、制作、性能参数及典型应用。采用双晶体反向级联设计,将两片晶体工作频率的差值作为器件的移频频率,避免了单片声光晶体难以实现低频声光移频的问题。样品获得的性能参数为:工作波长1 053nm,移频频率10 MHz,插入损耗3.3dB,光上升时间33ns,输出偏振态线偏振。     

用光学频移的激光测速系统

文章介绍了国内首次研制成功了带有光学频移装置的激光多普勒测速系统。以氦氖激光器为光源。采用声光调制晶体为频移元件，双差动工作模式。     

LD相对于铯原子超精细跃迁线的偏频锁定

对于单纵模半导体激光器（ＬＤ）,应用往返两次通过一个声光频移系统的方法,结合铯原子饱和吸收稳频技术,实现了激光频率相对于铯原子Ｄ２线６２Ｓ１／２（Ｆ＝４）→６２Ｐ３／２（Ｆ′＝５）超精细跃迁的偏频锁定。其特点是可通过调谐声光频移系统的工作频率方便地改变偏频量,而不需要对光路进行再调整     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.