Switched Inductor With Wide Tuning Range and Small Inductance Step Sizes

A switched inductor based on mutual-inductance switching is proposed that aims at increasing the inductance tuning range as well as the number of inductance step sizes. This is achieved with additional coupling structures and switch constellations. Applied to a 32 nm $LC$ oscillator, the proposed inductor coil enables a frequency tuning range of 100% (1.5 octaves) from 2.8–8.4 GHz with switchable inductance values between 220 and 600 pH.      

Improved quality-factor of 0.18-/spl mu/m CMOS active inductor by a feedback resistance design

A novel CMOS active inductor approach, which can improve the quality-factor, was presented in this report. A cascode-grounded active inductor circuit topology with a feedback resistance was proposed, which can substantially improve its equivalent inductance and quality-factor. This feedback resistance active inductor was implemented by using a 0.18-/spl mu/m 1P6M CMOS technology, which demonstrates a maximum quality-factor of 70 with a 5.7-nH inductance at 1.55 GHz, where the self-resonant frequency is 2.5 GHz. The dc power consumption of this active inductor is less than 8 mW.     

Variable inductance multilayer inductor with MOSFET switch control

A variable monolithic inductor having a stacked spiral inductor connected with MOSFET switches is proposed and fabricated in a 0.18 /spl mu/m, one-poly-six-metal (1P6M) standard CMOS process. By controlling a voltage of the MOSFET switch, the proposed three-stacked inductor demonstrates a continuously variable inductance of from 8 to 23 nH at 2.4 GHz, and due to its stacked structure, it takes less than 50% of the chip area compared with conventional single layer inductors. With its compact size and variable inductance feature, the proposed variable inductor is a prospective key component for the multiband RF circuits such as electrically controllable matching circuits and wide tuning range voltage controlled oscillators (VCOs).     

Novel grounded parallel inductance simulators realization using a minimum number of active and passive components

In this paper novel lossless and lossy grounded parallel inductance simulators are reported. All grounded inductor simulator circuits employing only a single DXCCII and three passive components are proposed. The proposed topologies realized all grounded parallel inductance variations. To demonstrate the performance of the presented DXCCII based parallel inductance simulators, we used one of the circuits to construct a third order high-pass filter, a voltage-mode band-pass filter and LC oscillator. Simulation results are given to confirm the theoretical analysis. The proposed DXCCII and its applications are simulated using CMOS 0.35 μm technology.     

New lossless inductance simulators realization using a minimum active and passive components

In this paper, five new lossless grounded inductance simulators are presented. All proposed inductor simulator circuits employ with only a single Fully Differential Second-Generation Current Conveyor (FDCCII), two resistors and a capacitor are proposed. Moreover, all passive components are grounded therefore the proposed inductance simulator circuits offer ease of integration and tuning advantages with low sensitivities. To demonstrate the performance of the proposed FDCCII-based inductance simulators, we use one of the circuits to construct a current-mode multifunction filter. The proposed inductance simulator circuits and current-mode multifunction filter are simulated with SPICE program. Simulation results are given to verify the theoretical analysis.     

一种采用LC谐振电路的高频差分有源电感

提出了一种采用LC并联谐振电路的新型差分有源电感,实现了宽的工作频带、高的Q值、较大的电感值和可调谐功能.采用无源电感和MOS晶体管可变电容构成LC谐振电路,减小了等效串联电阻和等效并联电容,在增大电感值、Q值的同时,扩大了工作频带.仿真结果表明,在2～7.6 GHz频率范围内,该新型差分有源电感的电感值大于26 nH...     

一种Q-f与L-f特性增强的高线性有源电感

提出了一种品质因数(Q)-频率(f)特性与电感值(L)-频率(f)特性增强的新型高线性有源电感,主要由负跨导器、新型正跨导器、Q值增强调制模块、反馈电阻、两级电平转换电路和负跨导器分流支路组成。通过多个电路单元间的协同配合和所设置的三个外部偏置端电压的联合调谐,该有源电感不但具有高Q值,Q值相对于电感值可独立调节,而且高Q峰值及电感值在不同频率下能够基本保持不变,同时也有高的线性度。验证结果表明,在6 GHz下,Q值可在275~4 471之间变化,调谐率为176.8%,而电感值的变化率仅为1.5%；在4.8 GHz、5.2 GHz、5.6 GHz和6 GHz的4个频点下,分别获得了4 480、4 469、4 473和4 471的高Q峰值,变化率仅为0.24%,且电感值分别为7.532 nH、7.467 nH、7.909 nH、7.977 nH,变化率仅为6.3%；电感值的-1 dB压缩点为-13 dBV。     

New grounded simulated inductance circuit using a single PFTFN

A new single-PFTFN based lossless grounded inductance simulation circuit has been presented. The proposed circuit employs a single PFTFN along with four resistors and a single capacitor and realises a lossless grounded inductance subject to the fulfillment of only one realization condition. Some sample results of circuits realized with the new simulated inductor using existing CMOS FTFN implementation have been given to demonstrate the workability of the new circuit.     

双层悬空结构射频微电感制作研究

利用MEMS工艺制作了一种双层悬空结构的圆形射频微电感,研究了双层结构微电感中微带线宽度对其性能的影响。研究表明,双层悬空结构的圆形射频微电感不仅具有较大的电感量,而且其Q值也较高;双层微电感的Q值随微带线宽度的增大而升高,而电感量则随微带线宽度的增大而降低。对于微带线宽度为60μm的双层微电感,在频率2～4GHz时,其电感量可达到5nH左右,Q值达到20。     

一种电感值可独立调节的低噪声有源电感

基于回转器-电容原理,联合采用回转电容、可调反馈电阻、补偿电容和噪声抵消支路,提出了一种电感值相对于Q值可独立调节的低噪声有源电感。通过改变正-负跨导器之间的回转电容值来实现电感值的调节。因调节电感值而引起的Q值变化,可通过调节正-负跨导器之间的可调反馈电阻值和伪差分对之间的补偿电容值来共同补偿,从而实现电感值相对于Q值的独立调节。通过噪声抵消支路来降低有源电感的噪声。对该有源电感的性能验证表明,协同调节3个外部偏置电压,可实现电感值相对于Q值的独立调节,在电感峰值变化幅度为175.49%时,Q值的峰值变化幅度仅为4.88%。在0~6 GHz内,有源电感的输入参考噪声电流均小于45 pA·Hz-1/2,噪声较低。     

Centre-tapped spiral inductors for monolithic bandpass filters

A centre-tapped spiral inductor is proposed for use in fully balanced monolithic bandpass filters. The design consumes only 63% of the area required by two traditional spirals and delivers a common-mode rejection ratio approaching 40 dB. Moreover, the self-resonance frequency is twice that of a traditional grounded spiral of the same inductance value. Enabling higher reactances and Q-values to be achieved     

On-chip solenoid inductors with high quality factor for high frequency magnetic integrated circuits

On-chip solenoid inductors for high frequency magnetic integrated circuits are proposed. The eddy current loss was reduced by dividing the inductor into three consecutive inductors connected in series. The inductor has an inductance of 1.1nH and the maximum quality factor (Q/sub max/) of 50.5. The self-resonant frequency and the operating frequency at Q/sub max/ are greater than 17.5GHz and 16.7GHz, respectively.     

Floating inductance,FDNR and capacitance simulation circuit employing only grounded passive elements

A circuit for realizing floating inductance, grounded to a floating admittance converter, floating frequency dependent negative resistance (FDNR) and floating capacitance simulators depending on the passive element selection is presented. The proposed circuit employs only grounded passive elements and second-generation current conveyors (CCIIs) but it requires single passive component matching. Replacing second-generation current controlled conveyors (CCCIIs) instead of the CCIIs in the developed circuit, an electronically tunable floating inductor with bias currents can be obtained. Also, replacing dual X second-generation current conveyors (DXCCIIs) instead of the CCIIs in the introduced circuit, an electronically tunable floating inductor with bias voltages can be obtained. Under non-ideality conditions, the proposed circuit can realize a lossless floating inductor and a capacitor depending on the passive element choice. Simulation results using SPICE program are given to verify the theory.     

On-chip vertical tapered solenoid inductor with high self-resonance frequency

A novel on-chip vertical tapered solenoid inductor has been designed fabricated and experimentally characterised. Owing to its vertical tapered solenoid structure, it is observed that the frequency corresponding to the peak quality factor (f_Qmax) increases by 160%, i.e. from 4.05 to 10.55 GHz, and the self-resonance frequency (f_sr) increases from 21.3 to more than 25 GHz, when compared to a traditional planar inductor of similar inductance and on-chip area. Further, this inductor is found to exhibit a self-shielding characteristic which has a strong impact on the requirements of floating shields underneath the inductor. The performance of the inductor is also characterised at different temperatures.     

Suspended Spiral Inductor and Band-Pass Filter on Thick Anodized Aluminum Oxide

We make suspended inductors and 2.45 GHz BPFs on the selectively anodized aluminum. The thick anodized alumina is used as the supporting dielectric and it is easily removed by using chemical wet-etching. The thickness of anodized alumina is 80 mum and the depth of the total air-cavity is 200 mum. The fabricated inductor over an air cavity has a 25% greater Q factor and 21% higher inductance at 2 GHz compared to an inductor on anodized aluminum. The 2.45 GHz BPF adjusting the suspended inductors has 2.8 dB of insertion loss with a narrow bandwidth.     

A grounded inductance simulation using the DVCCS/DVCVS

A new economical active RC realization of a grounded inductance using the DVCCS/DVCVS as the active element is given. The circuit uses a single grounded capacitor which controls the magnitude of the inductor. Sensitivities to all passive and active circuit components are very low. Application of the simulated inductance in the realization of a canonic selective parallel resonator is discussed.     

MEMS-Based Tunable LC Bandstop Filter With an Ultra-Wide Continuous Tuning Range

This letter presents a new microelectromechanical system-based tunable LC filter that utilizes a tunable capacitor and a tunable inductor in a single device. An electrically floating metal plate is located between the tunable capacitor and the tunable inductor. As the floating metal plate is thermally moved and used commonly for both the capacitor and inductor, the device provides an ultra-wide continuous frequency tuning range by a simultaneous increase or decrease of the capacitance and inductance. The fabricated tunable LC filter showed a continuous frequency tuning ratio in excess of 127% in a range of 8.8 GHz to more than 20 GHz.      

Surface micromachined solenoid on-Si and on-glass inductors for RFapplications

RF performance of surface micromachined solenoid on-chip inductors fabricated on a standard silicon substrate (10 Ω·cm) has been investigated and the results are compared with the same inductors on glass. The solenoid inductor on Si with a 15-μm thick insulating layer achieves peak quality (Q-) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH. This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the narrowest-pitched on-glass inductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz, and spatial inductance density of 30 nH/mm². Both on-Si and on-glass inductors have been modeled by lumped circuits, and the geometrical dependence of the inductance and Q-factor have been investigated as well     

一种性能多种重构的高频压控有源电感

提出了一种性能多种重构的高频压控有源电感(HFVCAI).电路主要由第一回转回路、第二回转回路以及调控支路构成,且第一回转回路和第二回转回路并联,调控支路与第一回转回路连接,两个回转回路均配置了外部调控端.通过协同调节3个外部调控端,可对HFVCAI的性能进行3种重构:在高频工作区能够对电感值进行大范围调控,且同时能保...