TiO2基底对MoO3/TiO2复合薄膜电致变色性能的影响EI北大核心CSCD

采用水热法首先在导电玻璃上制备TiO2纳米线,随后电沉积涂覆MoO3薄膜,成功制备MoO3/TiO2复合薄膜。利用电化学测试与光谱测试,得到MoO3/TiO2复合薄膜的扩散系数、着色/退色的响应时间、光密度、电致变色可逆性和着色效率等参数,研究不同水热生长时长TiO2纳米线基底对MoO3/TiO2复合薄膜的电致变色性能的影响。结果表明:水热生长6h TiO2纳米线的MoO3/TiO2复合薄膜具有最佳的电致变色性能,扩散系数为2.86×10^-12 cm^2·s^-1,可逆性值为60.88%,光密度为0.41,着色效率达到124.49 cm^2·C^-1,着色和退色响应时间分别为13.53 s和12.65 s。     

射频磁控溅射制备TiO2-xNx薄膜及其光催化特性研究

利用射频磁控溅射在玻璃衬底上制备了透明TiO2 和 TiO2-x Nx 薄膜样品,通过 X 射线衍射(XRD)、原子力显微镜(AFM)及 UV Vis分光光度计等测试手段表征了样品的结构、形貌和光催化性能。结果表明制备的薄膜为锐钛矿相结构。随着 N2/Ar气流比的增大薄膜样品出现新的物相,吸收光谱向可见光方向展宽,在N2/Ar流量比为 3∶100 时,制备的薄膜在可见光区具有很好的光催化性能。     

直流磁控溅射沉积WO3薄膜电致变色性能研究

以金属钨为靶材,采用直流反应磁控溅射方法,在玻璃上制备电致变色WO3薄膜.利用X射线衍射(XRD)方法对薄膜的结构进行了分析,得出了WO3薄膜的沉积工艺.制备了WO3/TTO/Glass电致变色器件,并对其性能进行了研究.结果表明在Li+注入前后,薄膜的透射率平均变化约50%,具有较好的可逆变色特性;Li+注入后,WO3薄膜中的一部分W6+变为W5+,转化比例约为25%.     

氧流量和钛掺杂对WO3电致变色性能的影响

采用中频孪生磁控溅射技术制备非晶WO3薄膜.拉曼光谱、X射线衍射(XRD)、紫外分光光度计、计时安培分析仪等测试手段分析薄膜的结构、吸收光谱、透射光谱及响应时间.研究了氧流量和钛掺杂对薄膜电致变色性能的影响.结果表明原始非晶态WO3薄膜在较高O2流量比份(＞ 95%)条件沉积时,表现出更好的变色性能,对于500 nm～800 nm可见光范围,薄膜的透光率差值大于60%.钛掺杂后吸收光谱向短波方向移动,且掺杂5%后,近紫外线区域吸收率明显提高.掺杂5%,10%后响应速度提高了1倍,但着色效率降低.     

磁控反应溅射制备的Ta2O5薄膜的光学与介电性能

采用直流磁控反应溅射技术，在不同的Ar/O2比条件下制备了系列Ta2O5薄膜样品，采用紫外．可见光透射光谱和椭偏光谱测试分析技术，研究了Ta2O5薄膜在可见光范围内的透射率、折射率和消光系数；同时还采用HP 4192A阻抗分析仪测试分析了样品在500Hz～13MHz频段的介电谱，结果表明在300～700nm的可见光波长范围内，氧化钽薄膜的消光系数k→0，折射率＞2．0，透射率大约80％。500Hz下的低频介电常数5的典型值为20.1。损耗角正切tgδ为19.9。     

反应磁控溅射法制备F掺杂ZnO(FZO)薄膜的结构和透明导电性能

以Zn/ZnO/ZnF2混合物为靶材,在衬底温度(Ts)为150℃和300℃、溅射气氛为Ar+O2和Ar+H2下反应溅射制备F掺杂ZnO(FZO)薄膜,研究气体流量、Ts以及溅射气氛对薄膜结构及透明导电性能的影响.结果表明:对于Ar+O2下制备的FZO薄膜,Ts=300℃时有利于制备出具有(002)择优取向、结晶度高、压应力低且透明导电性能较好的薄膜.对于Ar+H2下制备的薄膜,Ts增大到300℃虽然提高了薄膜结晶度和透光性,降低了压应力,但薄膜厚度明显降低,薄膜导电性能变差.比较两种气氛下制备的FZO薄膜,发现Ar+H2下制备的薄膜可在150℃和0.8～3.2 mL·min-1的H2流量范围内得到更好的透明导电性能(电阻率为3.5×10-3Ω·cm,可见光平均透光率为87％).讨论Ar+H2气氛时H等离子的刻蚀作用与H掺杂、A r+O 2气氛时O离子的轰击作用与薄膜氧缺陷的变化、Ts升高时沉积原子反应活性与迁移能力增强以及Eg与载流子浓度的关系.     

热处理温度对TiO2薄膜结构及电色性能的影响

采用溶胶-凝胶法在镀有ITO透明电极的玻璃上制备了TiO2电致变色薄膜,用XRD、FT-IR、SEM、TG-DTA、分光光度计和电化学工作站等研究了热处理温度对其成分、结构和电致变色性能的影响.结果表明:350℃以下,薄膜呈非晶态;450℃时形成锐钛矿结构,同时出现网状分布的缝隙.薄膜具有较弱的阴极电致变色效应,对可见光的调制幅度随温度的升高而降低.当温度从120℃上升到450℃时,样品的K值由0.56升高到0.93,循环寿命由不足50次增加到10000次以上,注入电荷密度则由14.12 mC/cm2下降到6.79 mC/cm2.350℃处理的薄膜具有较好的综合性能,适于制备透射型电致变色器件的对电极.     

射频溅射制备氧化镍电致变色薄膜的研究

采用射频反应磁控溅射工艺，以纯镍靶为靶材，在SnO2玻璃上制备电致变色NiOx薄膜。通过对薄膜X射线衍射（XRD）、X光电子能谱（XPS）、扫描隧道显微镜（STM）、循环伏安曲线及可见光透过率的测定，探讨了NiOx薄膜的电致变色性能和微观结构之间的关系，研究了热处理过程中的结构变化和表面形貌。测试表明该氧化镍薄膜具有良好的电致变色性能和阳极着色效应，以及较高的使用寿命。     

气流场强度对直流磁控溅射ZAO薄膜性能的影响

用含2%Al的Zn/Al合金靶材,在不同气流场强度下使用直流反应磁控溅射法在玻璃衬底上制备了ZAO(ZnO:Al)透明导电薄膜样品.定义气流场强度等于总气流量除以总气压.结果表明:气流场强度的大小对ZAO薄膜的表面形貌和电导率有较大影响,对可见光的透射率影响不大.在Ar气压强为0.3Pa,流量为22sccm,O2气压强为0.08Pa,流量为10sccm,气流场强度约为84sccm/Pa时制备ZAO薄膜的最低电阻率为4.2×10-4Ω·cm,可见光透射率为90%.     

中频磁控溅射NiO_x电致变色薄膜(英文)

采用中频孪生非平衡磁控溅射技术,制备了纳米晶结构NiOx电致变色薄膜。利用原子力显微镜、掠射X射线衍射、电化学设备、紫外分光光度计等测试手段分析薄膜结构及电致变色特性。结果表明:室温沉积获得表面质地均匀的NiOx薄膜;在±3V致色电压下,薄膜电致变色性能优异,对可见光透过率调制范围达30%以上,但薄膜寿命低。获得的薄膜为结构疏松的纳米晶结构,易于离子的注入和抽取,变色性能优异,但易发生Li+不可逆注入,薄膜寿命低。     

Electrochromic and optical study of atmospheric pressure chemical vapour deposition MoO3-Cr2O3 films

Electrochromism (EC) is a phenomenon in which materials are able to change their optical properties in a reversible and persistent way under the action of a voltage pulse. The studied MoO3-Cr2O3 films are obtained by atmospheric pressure CVD. Mixing MoO3 films with Cr2O3 is expected to enhance optical transparency and to modulate electrochromic properties of MoO3 films. In the present work, the study is focused on the morphological, structural and optical properties of MoO3-Cr2O3 films as a function of annealing temperatures. Raman spectroscopy and optical spectrophotometry are used for the film characterization. The mixed oxide films obtained on ordinary glass substrates show transmittance values in the range of 70-80%. Surface morphology is analyzed by SEM and AFM methods. The microanalysis of MoO3-Cr2O3 films reveals uniform distribution of the elements, which is a sign of homogeneous structure.     

锂掺杂MoO3薄膜的制备及电色性能的研究

采用过氧化氢溶胶－凝胶法成功地在室温下制备了纯的ＭｏＯ_３和锂掺杂的ＭｏＯ_３薄膜．通过ＴＧ－ＤＴＡ热分析、ＦＴＩＲ红外光谱分析、循环伏安和光学特性的测试,研究了薄膜成膜过程中的结构转变过程和薄膜的电化学性能及电变色性能．结果表明通过Ｌｉ^＋掺杂,ＭｏＯ_３溶胶的稳定性和ＭｏＯ_３薄膜的电化学循环稳定性都有了较大的提高．且掺杂锂的ＭｏＯ_３薄膜仍具有良好的电变色性能．     

Microstructure Characterization of Sol-gel Prepared MoO3-TiO2 Thin Films for Oxygen Gas Sensors

Binary metal oxide MoO3-TiO2 films have been prepared using the sol-gel technique. The thin films were annealed at several temperatures including 400℃,450℃,500℃,550℃ and 600℃ for lhour. The morphology, crystalline structure and chemical composition of the films have been analysed using SEM,XRD,RBS and XPS techniques. The SEM analysis showed that the films annealed at 450℃ are mainly smooth and uniform with 20-100nm-sized grains and with few particles as large as a micrometre or more. The XRD analysis revealed that the films annealed at 400℃ were a mixture of orthorhombic and hexagonal MoO3phases. The films annealed at 450℃ increased in hexagonal phase. The preferential orientation growth along(100) plane of the hexagonal phase and (010) plane of the orthorhombic phase has been found in both samples. RBS and XPS analysis showed that the films were stoichiometric. When the annealing temperature is increased to more than 500℃, the concentration ratio of MoO3 to TiO2 decreased due to the evaporation of MoO3. For the study of the electrical and gas sensing properties, films were deposited on sapphire substrates with interdigital electrodes on the front-side and a Pt heater on the backside. The O2 gas sensing properties of MoO3-TiO2 thin films are discussed.     

Effect of deposition ambient on structural and optical properties of Mg<Subscript>x</Subscript>Zn<Subscript>1−x</Subscript>O alloy thin films grown by RF sputtering

Mg_xZn_1−xO thin films were deposited on Corning eagle 2,000 glass substrates by a RF magnetron sputtering using a ceramic target. The effect of Ar/O₂ ratios on structural and optical properties was investigated. The XRD results showed that the film demonstrated the best structural properties when the Ar/O₂ ratio equal 7:3. Sputtering ambient seemed to have minor effect on the optical properties of Mg_xZn_1−xO thin films.     

反应溅射Ti-Si-N纳米晶复合薄膜的微结构与力学性能

采用Ar、N2 和SiH4混合气体反应溅射制备了一系列不同Si含量的Ti Si N复合膜 ,用EDS、XRD、TEM和微力学探针研究了复合膜的微结构和力学性能。结果表明 ,通过控制混合气体中SiH4分压可以方便地获得不同Si含量的Ti Si N复合膜。当Si含量为 (4～ 9)at%时 ,复合膜得到强化 ,最高硬度和弹性模量分别为 34 2GPa和 398GPa。进一步增加Si含量 ,复合膜的力学性能逐步降低。微结构研究发现 ,高硬度的Ti Si N复合膜呈现Si3 N4界面相分隔TiN纳米晶的微结构特征 ,其中TiN纳米晶的直径约为 2 0nm ,Si3 N4界面相的厚度小于 1nm。     

Electrochromic properties of N-doped tungsten oxide thin films prepared by reactive DC-pulsed sputtering

In depositing nitrogen doped tungsten oxide thin films by using reactive DC-pulsed magnetron sputtering process, nitrous oxide gas (N₂O) was employed instead of nitrogen (N₂) as the nitrogen dopant source. The nitrogen doping effect on the structural and electrochromic properties of WO₃ thin films was investigated. X-ray diffraction (XRD) results show that the films are amorphous. Morphological images reveal that the films are characterized by a hybrid structure comprising nanoparticles embedded in amorphous matrix and open channels between the agglomerated nanoparticles, which promotes rapid charge transport through the film. Increasing the nitrogen doping concentration is found to decrease the nanoparticle size and the band gap energy. The electrochromic properties were studied using cyclic voltammetric and spectroeletrochemical techniques. The film with N content of ~ 5 at.% exhibits higher optical modulation and coloration efficiency as well as faster ion transport kinetics. The results reveal that electrochromic and lithium ion transport properties are moderately enhanced relative to the un-doped tungsten oxide thin films by appropriate content of dopant, due to the effects of nitrogen doping.     

Electrochromic properties of tungsten-titanium oxide films

The last decade has seen great in electrochromic (EC) technology for smart windows and displays. In this study, WTiOx films formed from TiO2 and WO3 were deposited onto ITO glass with a sheet resistance of 10 Omega cm and on silicon substrates, by pulsed magnetron sputtering using a W and Ti alloy target. The films were deposited at plasma powers 100, 200, 300, 400 and 500 W using a gaseous Ar (150 sccm)/O2 (50 sccm) mixture; the working pressure was fixed at 5E-2 torr. The film thickness increased with the plasma power. However, increasing the plasma power yielded a more crystalline structure with poorer electrochromic properties. The influence of Ti doping and plasma power on the structural, optical and electrochromic properties of the WTiOx thin films was studied. WTiOx films grown at various plasma powers of under 400 W were amorphous. Deposition of films at 400 W yielded the optimal electrochromic properties, with high optical modulation, high coloration efficiency and the lowest color memory effect at wavelengths 400, 550 and 800 nm. An XPS study indicated that Ti can stabilize the valence state of W6+. The improvements caused by the doping with Ti were tested: an optical density (OD) of close to 0.85 and a maximum delta T (%) at 400 nm of 25.8%, at 550 nm of 52.5% and at 800 nm (in the near-IR region) of 62.4%.     

用直流溅射工艺制备的氧化铌薄膜的性能

采用直流反应溅射工艺制备了氧化铌（Nb2O5)薄膜，用XRD、AFM、AES和循环伏安等测试手段分析并研究了薄膜的组成、结构、表面形貌和电致变色性能间的关系。结果表明：在基础加热条件下可获得晶态TT－Nb2O5薄膜，沉积气压较高时的薄膜具有沿（100）面定向生长、结构相对较为疏松的柱状结构，这种薄膜具有良好的电化学稳定性，锂离子注入／抽出可逆性好，并具有灰色变色特性，在可见区（波长600nm)的透过率调制幅度为35％.     

氧化钒薄膜作为锂离子微电池阴极膜的磁控溅射技术的制备

研究了用磁控溅射系统来制备氧化钒薄膜,通过优化工艺条件制备出可用作锂离子微电池阴极膜的非晶态五氧化二钒（α-V2O5）薄膜。并使用X射线衍射（XRD）与X射线光电子谱（XPS）来表征薄膜的晶向及化学组分。结果表明通过调节氧气以及氩气的流量、基片的温度和溅射功率,可以制备出高纯度的α-V2O5薄膜。而且,半电池体系V2O5/LiPF6/Li被构造用于表征在锂电池中作为阴极膜的五氧化二钒（α-V2O5）的电学性质。在此电池系统经过10个循环放电后,薄膜放电电容趋于稳定值。     

O2/Ar气体流量比对射频磁控溅射HfO2薄膜的影响

采用射频磁控溅射法,以HfO2陶瓷作为靶材,在石英衬底上制备了HfO2薄膜.通过椭圆偏振光谱仪(SE)、X射线衍射(XRD)、场发射扫描电子显微镜(FE-SEM)研究了不同O2/Ar气体流量比对薄膜沉积速率、结构、形貌等的影响.结果表明,随着O2/Ar气体流量比从0增加到0.50,薄膜的沉积速率逐渐下降.O2/Ar气体...