Discharge properties and chemical stability of SrZrO films

Abstract— MgO thin film is currently used as a surface protective layer for dielectric materials because MgO has a high resistance during ion sputtering and exhibits effective secondary electron emission. The secondary‐electron‐emission coefficient γ of MgO is high for Ne ions; however, it is low for Xe ions. The Xe content of the discharge gas of PDPs needs to be raised in order to increase the luminous efficiency. Thus, the development of high‐γ materials replacing MgO is required. The discharge properties and chemical surface stability of SrO containing Zr (SrZrO) as the candidate high‐γ protective layer for noble PDPs have been characterized. SrZrO films have superior chemical stability, especially the resistance to carbonation because of the existence of a few adsorption sites due to their amorphous structure. The firing voltage is 60 V lower than that of MgO films for a discharge gas of Ne/Xe = 85/15 at 60 kPa.     

Relationship between exo‐electron currents from MgO thin film and statistical delay time in ACPDPs

Abstract— The exo‐electron currents from a ACPDP test panel with or without MgO crystals sprayed on MgO film were measured directly after eliminating of the wall‐voltage effect. An inverse relationship was established between the statistical delay time and exo‐electron currentfrom the MgO cathode film. The spraying of MgO crystals on MgO thin film was observed to reduce the statistical delay time dramatically even for the same exo‐electron currents measured. The shift of the inverse curve may be attributed to an increased discharge success probability by the MgO crystals sprayed.     

Improvement of luminous efficiency using high helium content in full‐HD plasma‐display panels

Abstract— The influence of the Xe (15%) and He (70%) fractions on the discharge and driving characteristics was compared in 50‐in. full‐HD plasma‐display panels. The same improvement in the luminous efficacy was obtained when increasing either the Xe or He fraction. However, the discharge current with a high He fraction was smaller than that with a high Xe fraction. While the breakdown voltage was hardly influenced by an increase in the He fraction, it was significantly changed when increasing the Xe fraction. The formative and statistical time lags were only slightly changed with a high He fraction, yet significantly increased with a high Xe fraction. In addition, the relatively low luminance and driving‐margin characteristics with a high He fraction were compensated for by controlling the capacitance of the upper dielectric layer.     

Improvement in luminance,luminous efficiency,driving margin,and operational lifetime of HD PDPs by using discharge deactivation film

Abstract— We have improved our 116‐cm HD PDP in many respects by using DDF formed on MgO around the display line boundaries. The DDF allows an extremely narrow inter‐pixel gap even for a stripe‐rib structure because it prohibits vertical crosstalk discharge. The DDF combined with a stripe‐rib structure results in the best address discharge response. Thus, a very wide driving margin area is achieved, allowing for a high percentage of Xe. The preferable sustain electrode shape follows the CAPABLE DDF style, where the principal discharge portion is separated from the bus via a slim bridge. This cell configuration proved to be excellent in operational life testing with respect to DDF as well as in manufacturing process margin. By employing both a thinner dielectric layer and a TiO₂reflective underlayer for phosphor, the address response is further improved so that Xe15% vol. is available from the viewpoint of the driving margin. Thus, we achieved a white peak luminance of 1220 cd/m² and a luminous efficiency of 2.16 lm/W simultaneously despite of an applied sustain voltage as low as 185 V. We foresee that they will be soon as high as 1400 cd/m² and 2.5 lm/W by modifying the sustain electrode style.     

Fabrication of 5.8‐in. OTFT‐driven flexible color AMOLED display using dual protection scheme for organic semiconductor patterning

Abstract— A 5.8‐in. wide‐QQVGA flexible color active‐matrix organic light‐emitting‐diode (AMOLED) display consisting of organic thin‐film transistors (OTFTs) and phosphorescent OLEDs was fabricated on a plastic film. To reduce the operating voltage of the OTFTs, Ta₂O₅ with a high dielectric constant was employed as a gate insulator. Pentacene was used for the semiconductor layer of the OTFTs. This layer was patterned by photolithography and dry‐etched using a dual protection layer of poly p‐xylylene and SiO₂ film. Uniform transistor performance was achieved in the OTFT backplane with QQVGA pixels. The RGB emission layers of the pixels were formed by vacuum deposition of phosphorescent small molecules. The resulting display could clearly show color moving images even when it was bent and operated at a low driving voltage (below 15 V).     

Characteristics of ACPDP test panels with aluminum fence electrode formed via anodic bonding with soda‐lime glass

Abstract— In an attempt to reduce materials and processing costs of ACPDPs, aluminum fence electrodes were prepared on soda‐lime glass substrates by chemically etching aluminum foil bonded directly onto the substrate via an anodic‐bonding process. Several different fence‐electrode patterns were designed and coated either with a glass dielectric layer or with an anodic aluminum oxide layer. Firing voltages, operation margin, luminance, and luminous efficiency of such test panels were evaluated. The results indicated that the performance of test panels with aluminum fence electrodes is comparable with conventional test panels with ITO/Ag electrodes, demonstrating the possibility of a dramatic reduction in the costs of ACPDPs.     

Effect of intensified discharge in the vicinity of ribs on PDP performance

It was determined that the discharge in the vicinity of ribs should be intensified to obtain low‐voltage, high‐luminous efficacy, and high module efficiency. One possible way is to increase the space between ribs and the discharge surface. Even if the amount of space increases by only 2 or 3 µm, it still results in low discharge voltage, large discharge current, and high luminous efficacy. For that reason it might be important to control the micron‐sized particles included in the MgO crystal dispersed layers. Another preferable way is to use ribs with a low electric permittivity (ε) that are represented by porous ribs. Moreover, low‐ε ribs diffuses the high‐energy spots in plasma, resulting in a high luminous efficacy. They feature a significantly lower sustain voltage and a smaller parasitic capacitance as well to facilitate a help high module efficiency. Also, highly porous ribs are expected to increase their practical use in aspects of mechanical strength and impurity gas exhaustion.     

Recent research and development on 71‐in.‐diagonal color PDPs

Abstract— The World's first 71‐ and 76‐in.‐diagonal ACPDPs with full high‐definition resolution (1920 × 1080), a high luminance of 800 cd/m², and a dark‐room contrast ratio of 1200:1 have been developed using a highly efficient barrier‐rib structure. Also a new MgO protective layer and a film‐type optical filter were developed to improve picture quality. To fabricate large‐sized panels over 70 in. on the diagonal, an improved uniform exposing technology for the patterning of electrodes, a green sheet method for the transparent dielectric layer, and a co‐processed bus and black‐matrix (CPBB) method were used.     

Protective layer for high‐efficiency PDPs driven at low voltage

Abstract— The sustain pulse voltage of a panel for 66‐kPa Ne + Xe (5–30%) with an (SrCa)O protective layer is 20–40% lower than that with an MgO protective layer. The luminous efficiency of the panel with a Ne + Xe (30%) (SrCa)O protective layer is 1.5 times that of the conventional panel with a Ne + Xe (10%) MgO protective layer; the sustain pulse voltages of these panels are almost the same. The power loss caused by panel capacitance is proportional to the second power of the sustain pulse voltage. Using the (SrCa)O protective layer for Xe (5–30%), the power loss is reduced by 35–60% compared with the MgO protective layer. It follows that, using the (SrCa)O protective layer, we can increase the Xe content with little power loss and thus achieve high‐efficiency PDPs. As for MgO and CaO with Xe ions, electrons are probably ejected from only the defect states. On the other hand, as for the SrO with Xe ions, it is likely that electrons can be ejected from not only defect states but also the valance band. This seems to be the reason why the driving voltage is lower with the (SrCa)O protective layer than with the MgO protective layer.     

Improved discharge characteristics using MgO single‐crystal particles and advanced CEL structure

Abstract— Pioneer Corporation introduced plasma‐display‐panel (PDP) TVs in 2005, which achieved the highest dark‐room contrast ratio of 4000:1 at the time. These PDPs had a novel discharge cell structure consisting of a crystal emissive layer (CEL) on a MgO protective thin film. This cell structure is refered to as a CEL structure. Magnesium‐oxide single‐crystal particles, which have a unique luminance peak around 230–250 nm and a good exo‐electron‐emission property, were found to be an excellent material for CEL and were utilized in CEL panels. In 2007, newly developed PDP TVs in which CEL was formed on a phosphor layer, in addition to the previous CEL structure, were introduced, and this discharge cell structure is refered to as advanced CEL structure. By using the new cell structure, the opposed discharge characteristics have been drastically improved, and a stable reset discharge has been realized with only a weak opposed discharge. As a result, black luminance has been drastically reduced, and a dark‐room contrast ratio of over 20,000:1, the highest ever reported, has been achieved.     

Electron‐beam deposition of MgO on plastic substrate and manufacturing flexible flat fluorescent lamp

Abstract— A flexible fluorescent lamp that utilizes the same plasma discharge mode as in PDPs has been manufactured. The structure of the flexible lamp is simple and easy to manufacture. All‐plastic materials including plastic substrates, barrier ribs (spacers), and sealants for low‐temperature manufacturing processing have been adopted except for the phosphor and MgO thin film. The MgO thin films were coated on the plastic substrates as a protection layer against the plasma discharge. The adhesion and biaxial texture of MgO thin film deposited on the plastic substrates, poly‐ethyle‐nenaphthalate (PEN) and polycarbonate (PC), at low temperature (100–180°C) has been characterized. The MgO film on PEN shows good adhesion under a repeated bending test. The manufactured flexible lamp consists of two plastic substrates of about 3 in. on the diagonal, barrier rib (spacer), and external ITO electrodes. The Ne‐Xe (5%) gas mixture at 100–200 Torr was used for the discharge gas. A maximum surface luminance of about 100 cd/m² was achieved for a 1 ‐kHz AC pulse.     

A4‐sized flexible ferroelectric liquid‐crystal displays with micro color filters

Abstract— We demonstrated an A4‐paper‐sized flexible ferroelectric liquid‐crystal (FLC) color displays fabricated by using a new plastic‐substrate‐based process which was developed for large‐sized devices. Finely patterned color filters and ITO electrodes were formed on a plastic substrate by a transfer method to avoid surface roughness and thermal distortion of the substrate, which induce disordering of the FLC molecular alignment. The thickness of an FLC/monomer solution sandwiched by two plastic‐film substrates was well controlled over a large area by using flexographic printing and lamination techniques. Molecular‐aligned polymer walls and fibers were formed in the FLC by a two‐step photopolymerization‐induced phase‐separation method using UV‐light irradiation. A fabricated A4‐sized flexible‐sheet display for color‐segment driving was able to exhibit color images even when it was bent.     

Effects of diamond and AlN layers inserted beneath the phosphor layer on the discharge characteristics of PDPs

Abstract— In this study, the effects of diamond and AlN layers inserted beneath the phosphor layer of the rear plate of a PDP were investigated. The layers were formed via an osmotic‐pressure coating process. Macrocells and test panels were prepared to examine their effects on luminance and luminous efficacy. The results indicate that the layers primarily affect the glow‐discharge behavior and eventually enhance the luminous efficacy of the PDP, suggesting the possibile improvement in the performance of PDPs.     

Numerical analysis of density of energy states for electron‐emission sources in MgO

Abstract— An analytical method to determine the density of energy states of electron‐emission sources (EESs) in chemical‐doped MgO is described using a discharge probability model and a thermal excitation and emission model. The density of energy states for multiple types of EESs is represented by using a linear combination of Gaussian functions of which parameters are determined by the theoretical emission time constant of an exoelectron and statistical delay time ts extracted from experimental stochastic distributions of discharge delay time in plasma‐display panels. When applied to Si‐doped MgO, the effective number of Si EES is calculated to be 1.8 × 10⁶ per cell. The average and standard deviations of activation energy have an energy level of 770 meV and a large value of 55 meV. In Si and H co‐doped MgO, the high peak density of [H^2?]⁰ appears at 550 meV. ts at the short time interval of 1 msec decreases and is independent of temperature due to exoelectron emission from the [H^2?]⁰. The dependence of ts at a time interval of 10 msec on temperature becomes weak because the energy structure of the Si EES broadens significantly attributed to the electrostatic effects of the doped H atoms.     

Development of a 25‐in. SVGA SMPDP

Abstract— A newly developed 25‐in. SVGA ACPDP containing a shadow mask (SMPDP) is presented. Some modifications have been introduced into the fabrication technique. Instead of using conventional Ag in a thick‐film process, an aluminum bus electrode without ITO was fabricated on the front substrate, which was made by using a thin‐film process. Due to this improvement, excellent uniformity of the dielectric layer has been achieved. Only five necessary process steps are required during the manufacturing process of the front/rear substrates for the SMPDP. The panel capacitance was reduced by over 20% by adopting an ITO‐less structure, which enables high‐speed addressing for large‐capacity displays. The color purity was improved by applying a high Xe content.     

Memory effects of all‐solution‐processed oxide thin‐film transistors using ZnO nanoparticles

Abstract— Non‐volatile memory effects of an all‐solution‐processed oxide thin‐film transistor (TFT) with ZnO nanoparticles (NPs) as the charge‐trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfO^x gate dielectric. ZnO NPs were used as the charge‐trapping site at the gate‐insulator—channel interface, and Al was used for source and drain electrodes. Transfer characteristics of the device showed a large clockwise hysteresis, which can be used to demonstrate its memory function due to electron trapping in the ZnO NP charge‐trapping layer. This memory effect has the potential to be utilized as a memory application on displays and disposable electronics.     

High‐performance MgO thin films for PDPs with a high‐rate sputtering‐deposition process

Abstract— A high‐rate sputtering‐deposition process for MgO thin films for PDP fabrication was recently developed. The deposition rate of the MgO thin film was about 300 nm/min which shows the possibility of production‐line application. The MgO film deposited in this work has a higher density than that of other deposition processes such as electron‐beam deposition and shows good discharge characteristics including firing voltage and discharge formation. These were achieved by controlling the stoichiometry and/or the impurity doping during the sputtering process.     

Discharge diagnosis of high Xe concentration and high‐γ protective layer in PDPs

Abstract— The high‐Xe‐concentration and high‐γ (ion‐induced secondary‐electron emission coefficient) protective layer have been diagnosed from both experimentation and simulation. The experimental results show that there is a great increase in luminance and luminous efficacy, while the breakdown voltage decreases in the high‐Xe and high‐γ discharge. In the high‐Xe discharge, the great increase in VUV radiation mainly results from an increase in excimer VUV emission. The application of high‐Xe concentration can greatly increase the luminous efficacy, while the high‐γ protective layer can promote it further. Considering that the total discharge efficiency can be divided into the electron heating efficiency, the Xe excitation efficiency, and the VUV radiation efficiency, both the electron heating efficiency and Xe excitation efficiency increased for a high‐Xe discharge; while for a high‐γ discharge, the increase in electron heating efficiency contributes to the improvement in discharge efficiency.     

Reduction of permanent image sticking in ACPDPs using RF‐plasma pretreatment on MgO surface

Abstract— The characteristics of the MgO layer are known to be an important parameter that affects the permanent image sticking or lifetime of an ACPDP. In this paper, to reduce the permanent image sticking in ACPDPs, the effects of RF‐plasma pretreatments of the MgO layer on the permanent image sticking are investigated. The treatment was conducted by using several plasma‐forming gases, including Ar, Ar followed by O², and O² followed by Ar. Measurements of luminance, normalized luminance, V^t closed curve, haze, MgO hardness, and photoluminescence between the discharge and nondis‐charge regions under dark and bright backgrounds indicated that the plasma treatments of MgO using either Ar or Ar followed by O² gases reduce the permanent image sticking on dark and bright images in an ACPDP.     

CAD oriented frequency,temperature, and DC bias dependent small‐signal,scalable circuit model of parallel‐plate paraelectric varactors

Simple, CAD compatible small‐signal scalable circuit model for the thin film parallel‐plate ferroelectric varactors is reported. It is based on the measured permittivity and loss tangent of the ferroelectric films along with the fundamental theoretical relationships of ferroelectrics in paraelectric phase. The model makes use of the measured DC field (voltage) at the inflection point of the C‐V curve where the nonlinearity (dC/dV) and the tunability are maximum. Both the capacitance and the equivalent loss resistance (dielectric losses) in the ferroelectric film take into account the low permittivity layers at the boundaries of the nano‐columns of the film. The frequency dependent losses in the top and bottom plates of the varactors and the parasitic inductance of the plates are also taken into account. The model is valid for ferroelectric films having columnar structure. It is useful in wide temperature, DC field, and frequency ranges. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009.