Simulation study of single‐cell‐gap transflective liquid crystal display with nonuniform potential

A single‐cell‐gap transflective liquid crystal display with a nonuniform electric potential is demonstrated. The top substrate has a top planar common electrode, a transparent dielectric layer with a general dielectric constant is coated on the bottom substrate, and two planar pixel electrodes with the same size are coated on the dielectric layer and the bottom substrate, respectively. With the different gaps between the two planar pixel electrodes and top planar pixel electrode, the nonuniform electric potential from the transmissive region (T region) to the reflective region (R region) is generated, while a bumpy reflector is coated under the bottom substrate. In this device, with the dielectric layer, the pixel and common electrodes generate a strong electric potential in the T region and a relatively weak electric potential in the R region. Consequently, the T and R regions accumulate the same optical phase retardation. The simulation results show that the display exhibits reasonably low operating voltage, high optical efficiency, and well‐matched voltage‐dependent transmittance and reflectance curves. Besides, the fabrication process and the driving mode of the transflective liquid crystal display are relatively simple, and it is suitable for mobile applications.     

A single‐cell‐gap transflective blue‐phase liquid crystal display based on fringe in‐plane switching electrodes

A transflective blue‐phase liquid crystal display (TRBP‐LCD) based on fringe in‐plane switching (FIS) electrodes is proposed. The proposed structure generates combined fringe and in‐plane electric fields that cause more liquid crystal (LC) molecules to reorient almost in plane above and between the pixel electrodes. The fringe field is mainly generated in the transmissive (T) region, and the horizontal electric field is mainly generated in the reflective (R) region. By optimizing the width of the pixel electrodes and the gap between two adjacent pixel electrodes, the different electric field intensity in the T and R regions contribute to balance the optical phase retardation between the T and R regions. As a result, the proposed TRBP‐LCD exhibits a low operating voltage and high optical efficiency, while it preserves a relatively simple fabrication process.     

A single‐cell‐gap transflective liquid‐crystal display using different pretilt angles in transmissive and reflective regions

Abstract— A single‐cel l‐gap transflective liquid‐crystal display with two types of liquid‐crystal alignment based on an in‐plane‐switching structure is proposed. The transmissive region is almost homeotropically aligned with the rubbed surfaces at parallel directions while the reflective region has a homeotropic liquid‐crystal alignment. For every driving voltage for a positive‐dielectric‐anisotropy nematic liquid crystal, the effective cell‐retardation value in the transmissive region becomes larger than that in the reflective region because of optical compensation film which is generated by low‐pretilt‐angle liquid crystal in the transmissive region. Under the optimization of the liquid‐crystal cell and alignment used in the transmissive and reflective areas, the transmissive and reflective parts have similar gamma curves. An identical response time in both the transmissive and reflective regions and a desirable viewing angle for personal portable displays can also be obtained.     

A dual‐cell‐gap transflective liquid‐crystal display with identical response time in transmissive and reflective regions

Abstract— A dual‐cell‐gap transflective liquid‐crystal display (TR‐LCD) with identical response time in both the transmissive and reflective regions is demonstrated. In the transmissive region, strong anchoring energy is used to decrease the response time, while in the reflective region, weak anchoring energy is used to increase the response time. And overdrive voltage technology is adopted to make the response time identical in both the transmissive and reflective regions. The device structure and operating principle of the TR‐LCD was analyzed, the anchoring energy in the transmissive and reflective regions was designed, and the response time and electro‐optic characteristics of the TR‐LCD was calculated. The simulated dual‐cell‐gap TR‐LCD demonstrated good performances.     

A single‐cell‐gap transflective LCD using active‐level‐shift technology

Abstract— A single‐cell‐gap transflective LCD using active‐level‐shift (ALS) technology has been developed and is presented. An efficient pixel architecture has recently been designed to apply different voltages on transmissive and reflective subpixels through two separated storage capacitors, formed by a boosting electrode and pixel electrodes. A 2.2‐in. vertical‐alignment‐mode (VA) transflective LCD prototype with a similar gamma for both the transmissive and reflective areas was obtained. Compared to a conventional dual‐cell‐gap design, the new single‐cell‐gap design achieves a 17% higher aperture ratio and the contrast increased from 200:1 to 500:1.     

Defect‐free deformed‐helix ferroelectric liquid‐crystal mode in a vertically aligned configuration (Invited Paper)

Abstract— A novel deformed‐helix ferroelectric liquid‐crystal (DHFLC) mode in a vertically aligned (VA) configuration is described. In this configuration, several unique features of display performance such as uniform alignment, fast response, and analog gray‐scale capability are obtained. Particularly, this VA‐DHFLC mode allows for the defect‐free uniform alignment of both the FLC molecules and the smectic layers over a large area without employing additional processes such as rubbing or electric‐field treatment that are generally required for planar FLC modes. Based on the VA‐DHFLC mode, a transflective display having a single‐gap geometry with in‐plane electrodes on two substrates in the transmissive regions and on one substrate in the reflective regions is described.     

Letter: Mechanisms for on/off currents in dual‐gate a‐Si:H thin‐film transistors using indium‐tin‐oxide top‐gate electrodes

Abstract— Two types of dual‐gate a‐Si:H TFTs were made with transparent indium‐tin‐oxide (ITO) top‐gate electrodes of different lengths to investigate the static characteristics of these devices. By changing the length of the ITO top gate, we found that the variations in the on‐currents of these dual‐gate TFTs with dual‐gate driving are due to the high resistance of the parasitic intrinsic a‐Si:H regions between the back electron channel and the source/drain contact. In the off‐state of the dual‐gate‐driven TFTs, the Poole‐Frenkel effect is also enhanced due to back‐channel hole accumulation in the vicinity of the source/drain contact. Furthermore, we observed for the first time that under illumination the dual‐gate‐driven a‐Si:H TFTs exhibit extremely low photo‐leakage currents, much lower than that of single‐gate‐driven TFTs in a certain range (reverse subthreshold region) of negative gate voltages. The high on/off current ratio under backside illumination makes dual‐gate TFTs suitable devices for use as switching elements in liquid‐crystal displays (LCDs) or for other applications.     

Switchable transmissive and reflective liquid‐crystal display using a multi‐domain vertical alignment

Abstract— A wide‐view transflective liquid‐crystal display (LCD) capable of switching between transmissive and reflective modes in response to different ambient‐light conditions is proposed. This transflective LCD adopts a single‐cell‐gap multi‐domain vertical‐alignment (MVA) cell that exhibits high contrast ratio, wide‐viewing angle, and good light transmittance (T) and reflectance (R). Under proper cell optimization, a good match between the VT and VR curves can also be obtained for single‐gamma‐curve driving.     

Transflective ferroelectric liquid‐crystal display with a single‐cell gap

Abstract— A ferroelectric liquid‐crystal (FLC) display was optimized as a transflective liquid‐crystal display (LCD). In this configuration, the single‐cell‐gap approach was considered. The optimized configuration exhibits a high contrast ratio, wide viewing angles, and achromatic (black/white) switching in both the transmissive and reflective modes. Because no double‐cell‐gap structure, no subpixel separation, and no patterning polarizers and retarders are included in the configuration, the configuration is easy to fabricate and also possess a perfect dark state. This configuration is also suitable for bistable applications.     

Single‐substrate encapsulated cholesteric LCDs: Coatable,drapable, and foldable

Abstract— The first ever, reflective cholesteric liquid‐crystal displays (ChLCDs) on single textile substrates made with simple coating processes have been developed. A novel approach for fabrication of ultra‐thin encapsulated ChLCDs with transparent conducting polymers as bottom and top electrodes will be reported. These displays are fabricated from the bottom‐up by sequential coating of various functional layers on fabric materials. Encapsulation of the cholesteric liquid‐crystal droplets in a polymer matrix and the mechanical flexibility of the conducting polymers allow for the creation of durable and highly conformable textile displays. The development and status of this next‐generation display technology for both monochrome and multicolor cholesteric displays will be discussed.     

Single‐cell‐gap transflective liquid‐crystal display and the use of photoalignment technology

Abstract— In this paper, transflective liquid‐crystal‐display (LCD) technology will be reviewed, and several new single‐cell‐gap transflective LCD configurations are proposed. Photoalignment technology is studied especially for transflective‐LCD applications. In order to realize the optimal performance of the display as well as a matched transmittance/reflectance voltage curve (TVC/RVC) for the transflective configurations, two different single‐cell‐gap transflective‐LCD approaches will be discussed. The first one is the dual‐mode single‐cell‐gap approach, in which different liquid‐crystal modes are applied to the transmissive and reflective subpixels of the transflective LCD. The other approach is the single‐mode s ingle‐cell‐gap approach, in which an in‐cell retardation film is applied to adjust the performance and TVC/RVC matching of a transflective LCD. Photoalignment technology is used to fabricate the dual‐mode liquid‐crystal cell in the first approach and also the in‐cell retardation film in the second approach. Prototypes of the proposed configurations have been fabricated, which show good performance and a matched TVC/RVC.     

Novel application of ink‐jet‐printing technology in multi‐domain alignment liquid‐crystal displays

Abstract— Based on the drop‐on‐demand characteristics of ink‐jet printing, the multi‐domain alignment liquid‐crystal display (LCD) could be achieved by using patterned polyimide materials. These polyimide ink locations with different alignment procedures could be defined in a single pixel, depending on the designer 's setting. In this paper, we combined the electro‐optical design, polyimide ink formulation, and ink‐jetting technology to demonstrate the application of multi‐domain alignment liquid‐crystal display manufactory. The first one was a multi‐domain vertical‐alignment LCD. After the horizontal alignment material pattern on the vertical alignment film, the viewing angle would reach 150° without compensation film. The second one was a single‐cell‐gap transflective LCD within integrating the horizontal alignment in the transmissive region and hybrid alignment in the reflective one in the same pixel. In addition, this transflective LCD was also demonstrated in the form of a 2.4‐in. 170‐ppi prototype.     

Silicon‐nanocrystal‐based photosensor integrated on low‐temperature polysilicon panels

Abstract— A photodetector using a silicon‐nanocrystal layer sandwiched between two electrodes is proposed and demonstrated on a glass substrate fabricated by low‐temperature poly‐silicon (LTPS) technology. Through post excimer‐laser annealing (ELA) of silicon‐rich oxide films, silicon nanocrystals formed between the bottom metal and top indium thin oxide (ITO) layers exhibit good uniformity, reliable optical response, and tunable absorption spectrum. Due to the quantum confinement effect leading to enhanced phonon‐assisted excitation, these silicon nanocrystals, less than 10 nm in diameter, promote electron‐hole‐pair generation in the photo‐sensing region as a result resembling a direct‐gap transition. The desired optical absorption spectrum can be obtained by determining the thickness and silicon concentration of the deposited silicon‐rich oxide films as well as the power of post laser annealing. In addition to obtaining a photosensitivity comparable to that of the p‐i‐n photodiode currently used in LTPS technology, the silicon‐nanocrystal‐based photosensor provides an effective backlight shielding by the bottom electrode made of molybdenum (Mo). Having a higher temperature tolerance for both the dark current and optical responsibility and maximizing the photosensing area in a pixel circuit by adopting a stack structure, this novel photosensor can be a promising candidate for realizing an optical touch function on a LTPS panel.     

Transflective blue‐phase liquid‐crystal display with corrugated electrode structure

Abstract— A transflective polymer‐stabilized blue‐phase liquid‐crystal display (BP‐LCD) with a corrugated electrode structure is proposed. To balance the optical phase retardation between the transmissive (T) and reflective (R) regions, two device structures are proposed. The first device structure has the same inclination angles but different cell gaps in the T and R regions. And the second device structure has the same cell gap but different inclination angles in the T and R regions. Both of the device structures can obtain well‐matched VT and VR curves. This display exhibits low operating voltage, high optical efficiency, and a wide viewing angle.     

High‐mobility self‐aligned top‐gate oxide TFT for high‐resolution AM‐OLED

High‐mobility and highly reliable self‐aligned top‐gate oxide thin‐film transistor (TFTs) were developed using the aluminum reaction method. Al diffusion to the oxide semiconductor and homogenization of the oxygen concentration in the depth direction after annealing were confirmed by laser‐assisted atom probe tomography. The high mobility of the top‐gate TFT with amorphous indium tin zinc oxide channel was demonstrated to be 32 cm²/V s. A 9.9‐in. diagonal qHD active‐matrix organic light‐emitting diode (AM‐OLED) display was fabricated using a five‐mask backplane process to demonstrate an applicable solution for large‐sized and high‐resolution AM‐OLEDs.     

Transflective device with a transparent organic light‐emitting diode and a reflective liquid‐crystal device

Abstract— A high‐transmittance transflective device based on a hybrid structure consisting of a transparent organic light‐emitting diode (OLED) stacked on top of a reflective liquid‐crystal device (RLCD) was conceptually demonstrated. By placing the transparent OLED on top of a vertically aligned LCD operated under normally black mode, a transmittance as high as 75.7% was obtained due to the asymmetric emission characteristics of a transparent OLED. To further improve the performance in the transmissive mode, a polarizer‐free LCD was used, which yielded an ultra‐high transmittance (82.2% overall).     

Chemical nanotechnology for transparent conducting coatings on thin‐glass and plastic‐foil substrates

Abstract— The properties of wet‐deposited transparent conducting oxide coatings (TCO) prepared by sol‐gel and nanoparticle processing are presented, showing their potentials and limits for display applications. The electrical properties to a large extent are determined by their porous morphology and the resulting grain boundaries, leading to a conductivity which is a factor 10 to 50 lower compared to similar PVD and CVD coatings. Though sol‐gel coatings like antimony‐doped tin oxide (ATO) can be deposited at very low cost, they always require a high‐temperature heat treatment limiting the choice of substrate. For a low‐temperature curing of the coatings, instead, the use of crystalline conducting nanoparticles of indium tin oxide (ITO) in combination with a chemical binder offers considerable application potential. This processing not only allows the preparation of coatings with a sheet resistance of 1 to 2 kΩ/□ but also a direct patterning by a fast UV curing. Typical applications for wet‐deposited coatings are demonstrated including the adjustment of the properties of sputtered ITO coatings, as well as electrodes and antistatic properties on plastics substrates with a moderate conductivity in the lower kΩ/□ range.     

Negative bias illumination stress assessment of indium gallium zinc oxide thin‐film transistors

Electrical performance stability of indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs) is evaluated under negative bias illumination stress (NBIS). A bottom‐gate IGZO TFT whose top surface is passivated with zinc tin silicon oxide (ZTSO) exhibits a dramatic improvement in NBIS stability compared with that of an unpassivated, bottom‐gate IGZO TFT. Oxygen chemisorption/desorption at the channel layer top surface is proposed to explain why an unpassivated TFT exhibits significantly more NBIS than a passivated TFT.     

Active‐matrix and flexible liquid‐crystal displays with carbon‐nanotube pixel electrodes

Abstract— The necessary processes to use random carbon‐nanotube networks as transparent conductors in twisted‐nematic liquid‐crystal displays have been developed, replacing indium tin oxide. Because the nanotubes are deposited vacuum‐free from suspension, the potential advantages are lower costs for material, equipment, and production. Nanotube networks are also much better suited for flexible displays than the commonly used metal oxides. With the developed processes, the world's first full‐color active‐matrix LCDs as well as directly addressed flexible displays on plastic substrates with carbon‐nanotube pixel electrodes, have been realized.     

Highly conductive SnO2 thin films for flat‐panel displays

Abstract— SnO₂ is considered to be a promising alternative material for indium tin oxide (ITO), which is used for thin‐film transparent electrodes in flat‐panel displays (FPDs) and is facing a serious indium depletion problem. However, annealing processes in the manufacture of plasma‐display panels (PDPs), which are major FPDs, cause high resistivity in SnO₂ films. To obtain lower resistivity after the annealing processes, the relationship between deposition conditions and resistivity and the influences of annealing on resistivity, both theoretically and experimentally, were investigated. As a solution, a method involving the formation of a coating of SiO₂ on SnO₂ is proposed, and a SnO₂ resistivity as low as 6.60 × 10^?5 Ω‐m was obtained after annealing.