A full integration of electromagnetic resonance sensor and capacitive touch sensor into LCD

We have developed a transmissive and reflective LCD that integrates electromagnetic resonance (EMR) and capacitive touch sensors using existing in‐cell process. This development has been achieved by utilizing our hybrid‐in‐cell technology with low resistance material for the RX, which is an improvement of over 80% compared with conventional indium thin oxide (ITO) material. For EMR detection, we have slightly modified the TX layer used for capacitive touch sensing, by making a coil loop that generates a magnetic field on the panel. The direction of current on the coil can be modulated by the low‐temperature polycrystalline silicon (LTPS) circuit. Our in‐cell touch sensing has separately assigned timings for display and touch units. This time‐sharing method provides immunity from display noise and consequently better signal‐to‐noise ratio (SNR) than other out‐cell types. In parallel, we have developed a new controller that can support both EMR and capacitive sensing as a one‐chip solution, with the capability of maximizing signal levels lowering noise and detecting the frequency precisely when there is pressure on the pen tip. Our in‐cell technologies contribute not only a good SNR for EMR pen but also the added benefits for thin design, lightweight panel, compared with conventional LCD techniques.     

An in‐cell capacitive touch sensor integrated in an LTPS WSVGA TFT‐LCD

This paper discusses an In‐cell capacitive touch sensor and its integration in an LTPS TFT‐LCD with 7‐inch screen size and WSVGA resolution. The operation of the newly developed sensor is based on capacitive coupling between user's finger and the detection electrode on the TFT substrate, and is purely capacitive. The sensors and the sensor driver circuits have been integrated in the TFT substrate of the prototype TFT‐LCD using LTPS technology. The prototype having 256x150 sensors shows advantages such as smooth operation with no touch force, high position accuracy, multi‐touch (10 or more), a thin and light LCD module, high display quality, and thus is suitable for various applications such as cell‐phones, smart‐phones, mobile‐PCs, and automotive‐use displays.     

Low‐temperature poly‐Si TFT‐LCD with an integrated analog circuit

We have developed a 6‐bit D/A converter and amplifier integrated low‐temperature poly‐Si TFT‐LCD in which an integrated signal‐line driver is driven by a 5‐V power supply. We have employed a D/A converter including a new capacitor array and an original amplifier comprised of serially connected comparators to achieve high accuracy. The D/A converter performs gamma correction using upper significant bits of input data. Control signals for these circuits were generated by the integrated timing circuit. These advances in integration have been achieved for the first time using 3‐μm design rule and improved LTPS TFT technologies and provide an advanced display system with lower power consumption, smaller module size, and higher durability.     

LTPS circuit integration for system‐on‐glass LCDs

Abstract— A 3.5‐in. QVGA‐formatted driving‐circuit fully integrated LCD has been developed using low‐temperature poly‐Si (LTPS) technology. This display module, in which no external ICs are required, integrates all the driving circuits for a six‐bit RGB digital interface with an LTPS device called a “FASt LDD TFT” and achieves a high‐quality image, narrow frame width, and low power consumption. The LTPS process, device, and circuit technologies developed for system‐on‐glass LCD discussed. The development phase of LTPS circuit integration for system‐on‐glass LCDs is also reviewed.     

Ultra‐low‐power polysilicon AMLCD with full integration

Abstract— An LTPS TFT‐LCD that only consumes 0.07 mW of power was developed. It is the world's first LCD equipped with all the circuits needed to display still images continuously for up to 1 year on a button battery. At the same time, the panel is capable of displaying 260,000‐color moving pictures.     

Digital time‐modulation pixel memory circuit in LTPS technology

Abstract— A digital time‐modulation pixel memory circuit on glass substrate has been designed and verified for a 3‐μm low‐temperature polysilicon (LTPS) technology. From the experimental results, the proposed circuit can generate 4‐bit digital codes and the corresponding inversion data with a time‐modulation technique. While the liquid‐crystal‐display (LCD) panel operates in the still mode, which means the same image is displayed on the panel, a data driver for an LCD panel is not required to provide the image data of the frame by the proposed pixel memory circuit. This pixel memory circuit can store the frame data and generate its corresponding inversion data to refresh a static image without activating the data driver circuit. Therefore, the power consumption of a data driver can be reduced in the LCD panel.     

A novel low‐power‐consumption all‐digital system‐on‐glass display with serial interface

Abstract— A new conceptual ultra‐compact LCD panel, which features a simple interface and lower‐power consumption by using low‐temperature polysilicon thin‐film transistor (LTPS‐TFT) technology has been developed. This panel is capable of switching operation modes based on an input command, and all the data are directly communicated with the circuit inside the panel through a Serial Peripheral Interface (SPI) protocol. The integration of the serial‐data‐receiver function on glass substrate has enabled the achievement of a significant reduction in the number of interface pins. Moreover, a low power consumption of 15 μW for a 2.26‐in. reflective LCD panel in combination with the technique of integrating a memory circuit in each pixel has been achieved.     

Low‐power and small‐area holding latch with level‐shifting function using LTPS TFTs for mobile applications

Abstract— A holding latch having a level shifting function fabricated by using a low‐temperature polysilicon (LTPS) process with a 5‐μm design rule on a glass backplane for power and cost effectiveness has been proposed. The layout area and the power consumption of the proposed circuit are reduced by 10% and 52%, respectively, compared with those of a typical structure which combines a static D‐latch and a cross‐coupled level shifter for a 2.2‐in. qVGA TFT‐LCD panel.     

Incorporation of input function into displays using LTPS TFT technology

Abstract— A new display in which an input function is incorporated has been developed by using LTPS TFT technology. A new circuit configuration that includes a lateral p‐i‐n diode with an in‐pixel amplifier, an LTPS A/D converter on the periphery of the glass substrate and an external image‐processing LSI is presented. The experimental results of two major applications of the image‐capture function and touch‐panel function are discussed.     

In‐cell capacitive‐type touch sensor using LTPS TFT‐LCD technology

Abstract— An LTPS TFT‐LCD with an in‐cell capacitive‐type touch sensor has been proposed and prototyped. The embedded sensor in the pixel was designed to amplify the voltage change caused by capacitive coupling between the detection electrode and conductive object (user's finger). No touch force is needed for sensor actuation and no extra electrical connection for the counter‐substrate is needed. The validity of the observed voltage difference of the sensor output on the TFT substrate was examined. The proposed architecture is considered to be applicable to larger LCDs for various applications such as smartphones, automotive navigation systems, and mobile internet devices.     

High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

A pixel circuit and a gate driver on array for light‐emitting display are presented. By simultaneously utilizing top‐gate n‐type oxide and p‐type low‐temperature polycrystalline silicon (LTPS) thin‐film transistors (TFTs), the circuits provide high refresh rate and low power consumption. An active‐matrix LED (AMOLED) panel with proposed circuits is fabricated, and driving at various refresh rate ranging from 1 to 120 Hz could be achieved.     

High‐uniformity 2T1C AMOLED panels by a built‐in trimming method

Abstract— A new built‐in trimming scheme boosting the OLED driving current through analog programming of the driver p‐channel TFT is proposed. By using a selective programming operation, the current variation on the LTPS panel can be reduced to less than 1%. Another blanket‐boosting method is investigated for concurrent programming of the entire panel. This blanket‐boosting scheme has been successfully demonstrated on a 2.4‐in. AMOLED panel where the non‐uniformity improved from 8.1 to 4.9% under a worst‐case condition.     

Digital‐to‐analog converter with gamma correction on glass substrate for TFT‐panel applications

Abstract— Low‐temperature polysilicon (LTPS) technology has a tendency towards integrating all circuits on glass substrate. However, the poly‐Si TFTs suffered poor uniformity with large variations in the device characteristics due to a narrow laser process window for producing large‐grained poly‐Si TFTs. The device variation is a serious problem for circuit realization on the LCD panel, so how to design reliable on‐panel circuits is a challenge for system‐on‐panel (SOP) applications. In this work, a 6‐bit R‐string digital‐to‐analog converter (DAC) with gamma correction on glass substrate for TFT‐panel applications is proposed. The proposed circuit, which is composed of a folded R‐string circuit, a segmented digital decoder, and reordering of the decoding circuit, has been designed and fabricated in a 3‐μm LTPS technology. The area of the new proposed DAC circuit is effectively reduced to about one‐sixth compared to that of the conventional circuit for the same LTPS process.     

An active‐matrix organic light‐emitting‐diode pixel circuit for the compensation of I × R voltage drop in power line

Abstract— A new voltage‐driving active‐matrix organic light‐emitting diode (AMOLED) pixel circuit is proposed to improve the display image‐quality of AMOLED displays. Because OLEDs are current‐driven devices, the I × R voltage drop in the power lines is evitable. Accordingly, the I × R voltage‐drop compensation scheme should be included in the pixel‐driving method when a voltage‐compensation method is used. The proposed pixel was designed for the compensation of an I × R voltage drop in the power lines as well as for the compensation of the threshold‐voltage non‐uniformity of low‐temperature polycrystalline‐silicon thin‐film transistors (LTPS TFTs). In order to verify the compensation ability of the proposed pixel, SPICE simulation was performed and compared with those of other conventional pixels. When the Vss voltage varies from 0 to 1 V, the drain current of the proposed pixel decreased by under 1% while that of conventional Vth compensation methods without Vss compensation decreased by over 60%. 2.2‐in. QCIF⁺ full‐color AMOLED displays, which employ the proposed pixel, have been also developed. It was verified by comparison of the display image quality with a conventional panel that our proposed panel successfully overcame the voltage‐drop problems in the power lines.     

Silicon‐nanocrystal‐based photosensor integrated on low‐temperature polysilicon panels

Abstract— A photodetector using a silicon‐nanocrystal layer sandwiched between two electrodes is proposed and demonstrated on a glass substrate fabricated by low‐temperature poly‐silicon (LTPS) technology. Through post excimer‐laser annealing (ELA) of silicon‐rich oxide films, silicon nanocrystals formed between the bottom metal and top indium thin oxide (ITO) layers exhibit good uniformity, reliable optical response, and tunable absorption spectrum. Due to the quantum confinement effect leading to enhanced phonon‐assisted excitation, these silicon nanocrystals, less than 10 nm in diameter, promote electron‐hole‐pair generation in the photo‐sensing region as a result resembling a direct‐gap transition. The desired optical absorption spectrum can be obtained by determining the thickness and silicon concentration of the deposited silicon‐rich oxide films as well as the power of post laser annealing. In addition to obtaining a photosensitivity comparable to that of the p‐i‐n photodiode currently used in LTPS technology, the silicon‐nanocrystal‐based photosensor provides an effective backlight shielding by the bottom electrode made of molybdenum (Mo). Having a higher temperature tolerance for both the dark current and optical responsibility and maximizing the photosensing area in a pixel circuit by adopting a stack structure, this novel photosensor can be a promising candidate for realizing an optical touch function on a LTPS panel.     

Current‐mode ambient‐light sensing circuit using p‐type low‐temperature polycrystalline‐silicon TFTs and p‐i‐m diodes

Abstract— A current‐mode ambient‐light sensing circuit, which is composed of p‐intrinsic‐metal (p‐i‐m) diodes and p‐type low‐temperature polycrystalline‐silicon (LTPS) thin‐film transistors (TFTs) for autobrightness control of display panels. The proposed sensing circuit exhibits a wide dynamic range of 56 dB, while the output signal range is 1.8 times wider than that of a previously reported sensing circuit.     

Electrical models of TFT‐LCD panels for circuit simulations

Abstract— As thin‐film‐transistor liquid‐crystal‐display (TFT‐LCD) panels become larger and provide higher resolution, the propagation delay of the row and column lines, the voltage modulation of Vcom, and the response time of the liquid crystal affect the display images now more than in the past. It is more important to understand the electrical characteristics of TFT‐LCD panels these days. There are several commercial products that simulate the electrical and optical performance of TFT‐LCDs. Most of the simulators are made for panel designers. However, this research is for circuit, system, and panel designers. It is made in a SPICE and Cadence environment as a commercial circuit‐design tool. For circuit and system designers, it will help to design the circuit around a new driving method. Also, it can be easily modified for every situation. It also gives panel designers design concepts. This paper describes the electrical model of a 15‐in. XGA (1024 × 768) TFT‐LCD panel. The parasitic resistance and capacitance of the panel are obtained by 3‐D simulation of a subpixel. The accuracy of these data is verified by the measured values of an actual panel. The developed panel simulation platform, the equivalent circuit of a 1 5‐in. XGA panel, is simulated by HSPICE. The results of simulation are compared with those of experiment, according to changing the width of the OE signal. The proposed simulation platform for modeling TFT‐LCD panels can be especially applied to large‐sized LCD TVs. It can help panel and circuit designers to verify their ideas without making actual panels and circuits.     

Clocked control scheme of separating TFTs for a node‐sharing LTPS TFT shift register with large number of outputs

This paper proposes the node‐sharing low‐temperature poly‐silicon (LTPS) thin‐film transistor (TFT) shift register with the clocked control scheme that completely turns separating TFTs off during the bootstrapping period to compensate for internal resistive and capacitive loads. The fluctuation is also addressed by adding pull‐down TFTs or raising the low level of the control signal.     

Low‐temperature poly‐Si TFT data drivers for an SVGA a‐Si TFT‐LCD panel

Low‐temperature poly‐Si TFT data drivers for an SVGA a‐Si TFT‐LCD panel have been developed. The data drivers include shift registers, sample‐and‐hold circuits, and operational amplifiers, and drive LCD panels using a line‐at‐a‐time addressing method. To reduce the power consumption of the shift register, a dot‐clock control circuit has been developed. Using this circuit, the power consumption of the shift register has been reduced to 36% of that of conventional circuits. To cancel the offset voltage generated by the operational amplifier, an offset cancellation circuit for low‐temperature poly‐Si TFTs has been developed. This circuit is also able to avoid any unstable operation of the operational amplifier. Using this circuit, the offset voltage has been reduced to one‐third of the value without using the offset cancellation circuit. These data drivers have been connected to an LCD panel and have realized an SVGA display on a 12.1‐in. a‐Si TFT‐LCD panel.     

A novel pixel memory using integrated voltage‐loss‐compensation (VLC) circuit for ultra‐low‐power TFT‐LCDs

Abstract— A novel pixel memory using an integrated voltage‐loss‐compensation (VLC) circuit has been proposed for ultra‐low‐power TFT‐LCDs, which can increase the number of gray‐scale levels for a single subpixel using an analog voltage gray‐scale technique. The new pixel with a VLC circuit is integrated under a small reflective electrode in a high‐transmissive aperture‐ratio (39%) 3.17‐in. HVGA transflective panel by using a standard low‐temperature‐polysilicon process based on 1.5‐μm rules. No additional process steps are required. The VLC circuit in each pixel enables simultaneous refresh with a very small change in voltage, resulting in a two‐orders‐of‐magnitude reduction in circuit power for a 64‐color image display. The advanced transflective TFT‐LCD using the newly proposed pixel can display high‐quality multi‐color images anytime and anywhere, due to its low power consumption and good outdoor readability.