Effect of growth interruption and strain buffer layer on PL performance of AlGaAs／GaAs／InGaAs quantum well for 1065 nm wavelength lasers

Strained InGaAs/GaAs quantum well (QW) was grown by low-pressure metallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer were introduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. Good PL results were obtained under condition of growth an interruption of 10 s combined with a moderate strain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed into devices. Broad area lasers (100 μm × 500 μm) show very low threshold current densities (43 A/cm2) and high slop efficiency (0.34 W/A, per facet).     

Interdiffusion in γ (face-centered cubic) Ni-Cr-X (X=Al, Si, Ge, or Pd) alloys at 900 °C

Interdiffusion in nickel (Ni)-chromium (Cr) (face-centered cubic γ phase) alloys with small additions of aluminum (Al), silicon (Si), germanium (Ge), or palladium (Pd) was investigated using solid-to-solid diffusion couples. Ni-Cr-X alloys having compositions of Ni-22at.% Cr, Ni-21at.%Cr-6.2at.%Al, Ni-22at.%Cr-4.0at.%Si, Ni-22at.%Cr-1.6at.%Ge, and Ni-22at.%Cr-1.6at.%Pd were manufactured by arc casting. The diffusion couples were assembled in an Invar steel jig, encapsulated in Ar after several hydrogen purges, and annealed at 900 °C in a three-zone tube furnace for 168 h. Experimental concentration profiles were determined from polished cross sections of these couples by using electron probe microanalysis with pure element standards. Interdiffusion fluxes of individual components were calculated directly from the experimental concentration profiles, and the moments of interdiffusion fluxes were examined to determine the average ternary interdiffusion coefficients. The effects of ternary alloying additions on the diffusional behavior of Ni-Cr-X alloys are presented in the light of the diffusional interactions and the formation of a protective Cr₂O₃ scale. This article was presented at the Multicomponent-Multiphase Diffusion Symposium in Honor of Mysore A. Dayananda, which was held during TMS 2006, the 135th Annual Meeting and Exhibition, March 12–16, 2006, in San Antonio, TX. The symposium was organized by Yongho Sohn of University of Central Florida, Carelyn E. Campbell of National Institute of Standards and Technology, Richard D. Sisson, Jr., of Worcester Polytechnic Institute, and John E. Morral of Ohio State University.     

Interficial stability of Cu/Cu(Ru)/Si contact system for barrier-free copper metallization

Films of Cu/Cu(Ru) and Cu(Ru) were deposited on Si substrates by magnetron sputtering. Samples were subsequently annealed and analyzed by four-point probe (FPP) measurement, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Auger electron spectroscopy (AES). After annealing at 500 °C, resistivity values of both systems decrease, but the reduction is more significant for Cu(Ru). Moreover, the resistivity values of annealed Cu(Ru) film are still greater than those of annealed Cu/Cu(Ru) film. XRD data suggest that Cu/Cu(Ru) film has higher thermal stability and Cu silicide cannot be observed up to 500 °C. According to TEM results, after annealing at 500 °C, the grain size of the Cu(Ru) film is smaller than that of Cu/Cu(Ru) film. In conjunction with AES, XRD, TEM analyses and sheet resistance measurement, it indicates that Cu/Cu(Ru) seed layers are potentially good for advanced Cu interconnects from the views of interfacial stability and low resistivity.     

Effects of cold rolling parameters on sagging behavior for three layer Al−Si/Al−Mn(Zn)/Al−Si brazing sheets

The effects of intermediate annealing (IA) and the final cold rolling (CR) condition on the microstructure and sagging resistance during brazing were investigated using three layer clad sheets composed of the Al−7.5 wt.%Si alloy (filler, thickness: 10 μm)/Al−1.3 wt.%Mn based alloy (core, 80 μm)/Al−7.5 wt.%Si alloy (filler, 10 μm). Also, the effect of 1.2≈2 wt.% Zn addition into the core on the sagging resistance of the clad sheets was determined. It was revealed that all the clad sheets fabricated by the optimum condition (IA at 690 K and CR to 20≈45%) show excellent sagging resistance with a limited erosion due to the formation of a coarsely recrystallized grain structure in the core during brazing. It was also revealed that the recrystallization behavior of the Al−1.3 wt.%Mn based alloy is hardly affected by the addition of 1.2≈2 wt.%Zn during the brazing cycle. Therefore, the sagging resistance of the clad sheets is found to be governed not by the Zn content added in the Al−1.3wt.%Mn based core, but by the intermediate annealing and final cold rolling condition.     

In situ technique for synthesizing multiple ceramic particulates reinforced titanium matrix composites (TiB + TiC + Y2O3)/Ti

In situ synthesized titanium matrix composites reinforced with multiple ceramic particulates including TiB, TiC and Y₂O₃ were fabricated by non-consumable arc-melting technique utilizing the chemical reaction among Ti, B₂O₃, B₄C and Y. The thermodynamic feasibility of the in situ reactions has been considered. X-ray diffraction (XRD) was used to identify the phases in the composites. Microstructures of the composites were observed by means of optical microscope (OM), scanning electron microscope (SEM) and electron probe. It is concluded that multiple reinforcements are synthesized and they show different shapes: TiB grows in needle shape; TiC grows in near-equiaxed and rod-like shapes; Y₂O₃ grows in near-equiaxed shapes when the content of Y is 0.6 wt.% and grows in dendritic shapes when the content of Y increases to 1.8 wt.%. Reinforcements TiB, TiC and Y₂O₃ are distributed uniformly in the titanium matrix.     

碱性条件下M/C(M=Pt, Pd, Ni, Ag, Au)对甲醇氧化电催化活性的对比研究

用化学还原法制备了M/C(M=Pt, Pd, Ni, Ag, Au) 5种纳米金属碳截催化剂,用XRD、XPS分别表征活性物的晶相结构、表面组成和价态形式,用TEM观察催化剂微观形貌,用循环伏安法测定不同催化剂对甲醇氧化的电催化活性。结果表明,催化剂中的纳米金属粒径在3~11 nm之间,纯度较高,在载体表面的分布较为均匀;Pd/C催化剂对甲醇氧化有较好的催化作用,Ni/C对甲醇氧化有一定的活性,而Ag/C和Au/C几乎没有活性。在1 mol·L-1CH3OH+1 mol·L-1NaOH条件下,Pd/C对甲醇氧化最高峰电流密度为890 mA·mg-1,约为Pt/C的66%,Ni/C对甲醇氧化最高峰电流密度为6.3 mA·mg-1,仅为Pt/C的0.46%。