共查询到20条相似文献,搜索用时 23 毫秒
1.
Taorong GONG Fengping YAN Dan LU Ming CHEN Peng LIU Peilin TAO Muguang WANG Tangjun LI Shuisheng JIAN 《中国光电子学前沿》2009,2(4)
A 10-GHz clock recovery from a 16×10-Gbit/s optical time-division-multiplexed (OTDM) data stream is experimentally demonstrated using an electro-absorption modulator and 40-Gbit/s electric time-division-multiplexed (ETDM) demultiplexer. The recovered clock signal exhibits excellent stability, with root square (RMS) jitter of 328 and 345 fs corresponding to back-to-back and transmission over 100 km, respectively. 相似文献
2.
Ertel J. Helbing R. Hoke C. Landolt O. Nishimura K. Robrish P. Trutna R. 《Lightwave Technology, Journal of》2006,24(4):1674-1680
The authors describe a reconfigurable optical add-drop multiplexer designed for 50-GHz channel spacing over either the C- or L-bands. The system may also function as a variable optical attenuator. The design features a reflective liquid-crystal modulator, a compact free-space spectrometer, polarization diversity, and fine-scale attenuation control. 相似文献
3.
《Solid-State Circuits, IEEE Journal of》1987,22(3):385-389
A silicon bipolar circuit is presented which may be used as either a 1:2 demultiplexer or a decision circuit up to the bit rate of 5 Gb/s. The circuit was fabricated with a standard bipolar technology with oxide-wall isolation, 2-/spl mu/m emitter stripe widths, and a transit frequency of about 9 GHz at V/SUB CE/=1 V. The high-speed performance of the circuit was achieved by applying a double sampling scheme. Clock phase margin (CPM) and decision ambiguity are 120/spl deg/ and 150 mV at 4 Gb/s, respectively. CPM at 5 Gbit/s is about 90%. Decision feedback equalization may be included in the circuit scheme for optional use. 相似文献
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40-Gb/s packet-selective photonic add/drop multiplexer based on optical-code label header processing 总被引:1,自引:0,他引:1
A packet-by-packet-selective photonic add/drop multiplexer, of the finest data granularity, is experimentally demonstrated at 40 Gb/s. An optical-code label, attached to the packet, enables determination, in the optical domain, of whether to drop, cut through, or add packets. 相似文献
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A simple optical add/drop multiplexer (OADM) based on a X-crossing InGaAsP-InP vertical coupler filter is demonstrated. Laterally separated input and output waveguides and the X-crossing arrangement are achieved using wafer bonding. A sidelobe level of -26 dB and a coupling efficiency of 97% with the central wavelength at 1.56 μm were measured for an OADM with an X-crossing angle of 0.25 相似文献
9.
Miyamoto Y. Yoneyama M. Otsuji T. Yonenaga K. Shimizu N. 《Solid-State Circuits, IEEE Journal of》1999,34(9):1246-1253
This paper presents 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-μm-gate-length InP high electron mobility transistor IC's and a scheme for upgrading toward a terabit-per-second capacity system. A 40-Gbit/s, 300-km, in-line transmission experiment and a dispersion-tolerant 40-Gbit/s duobinary transmission experiment are described as 40-Gbit/s single carrier system applications on dispersion-shifted fiber. An ultra-high-speed receiver configuration using a high-output-power photodiode is introduced to realize fully electrical receiver operation beyond 40 Gbit/s. The high-sensitivity operation of the optical receiver (-27.6 dBm@BER=10-9) is demonstrated at a data bit rate of 50 Gbit/s for the first time using a unitraveling carrier photodiode. A dense wavelength division multiplexing (DWDM) system operating up to terabits per second can be easily realized on a zero-dispersion flattened transmission line using ultra-high speed TDM channels of 40 Gbit/s and beyond. An experiment demonstrates 1.04-Tbit/s DWDM transmission based on 40-Gbit/s TDM channels with high optical spectrum density (0.4 bit/s/Hz) without dispersion compensation 相似文献
10.
Katsura K. Usui M. Sato N. Ohki A. Tanaka N. Matsuura N. Kagawa T. Tateno K. Hikita M. Yoshimura R. Ando Y. 《Advanced Packaging, IEEE Transactions on》1999,22(4):551-560
NTT is currently working on developing a high-throughput interconnection module that is both compact and cost effective. The technology being developed is called “parallel inter-board optical interconnection technology”, or “ParaBIT”. The ParaBIT module that has been developed is the first step; it is a front-end module with 40 channels, a throughput of over 25 Gbit/s, and a transmission distance of over 100 m along multimode fibers. One major feature of this module is the use of vertical-cavity surface-emitting laser (VCSEL) arrays as very cost-effective light sources. These arrays enable the same packaging structure to be used for both the transmitter and receiver. To achieve super-multichannel performance, high-density multiport bare-fiber (BF) connectors were developed for the module's optical interface. Unlike conventional optical connectors, these BF connectors do not need a ferrule or spring. This ensures physical contact with an excellent insertion loss (less than 0.1 dB per channel). A polymeric optical waveguide film with a 45° mirror for coupling to the VCSEL and photo-diode (PD) arrays by passive optical alignment was also developed. To facilitate coupling between the VCSEL/PD array chips and the waveguide, a packaging technique was developed to align and die bond the optical array chips on a substrate. This technique is called transferred multichip bonding (TMB); it can be used to mount optical array chips on a substrate with a positioning error of only several micrometers. These packaging techniques enabled ultra-parallel interconnections to be achieved in prototype ParaBIT modules 相似文献
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Forward error correction (FEC) has been used to improve the bit error rate performance of a 5 Gbit/s 9000 km erbium-doped fibre amplifier (EDFA) transmission line. The results using a 5 Gbit/s prototype optical transmission terminal showed extremely small penalty in BER performance after 9000 km transmission 相似文献
12.
Optimum design of a 4-Gbit/s GaAs MESFET optical preamplifier 总被引:1,自引:0,他引:1
An analysis for determining the optimum MESFET gate width to optimize the sensitivity of a high-speed optical preamplifier is presented. A full MESFET model is employed including correlated gate and drain noise sources. The design of an optimum sensitivity monolithic shunt feedback amplifier, including stability requirements, is investigated. The results show that the optimum gate width for minimizing input equivalent noise is significantly larger than earlier simplfied predictions. A sensitivity improvement of 1.2 dB is demonstrated for a 4-Gbit/s MESFET optical amplifier, and results showing the dependence of optimum FET width on photodetector capacitance are described. 相似文献
13.
采用波长为248nm的紫外光,在由标准单模光纤和自制的高掺锗光敏光纤熔融拉锥制作的2×2光纤失配耦合器上写入光纤光栅,实现了全光纤布拉格光栅(FBG)辅助失配耦合器型上下话路滤波器,并测试了器件的传输特性,器件的插入损耗和回波损耗分别为6.74dB和-18.84dB。用10Gbps的光信号进行了传输实验,分别测试了下话路前、后信号的眼图。与输入信号相比,下话路信号的信噪比从10.04dB降低到了9.27dB,信号的消光比从8.89dB降低到了4.68dB。 相似文献
14.
结合马赫-曾德干涉仪(MZI)和二元相位取样光纤布拉格光栅(BP-SFBG)构造出了一种具备多信道处理功能的光分插复用器(OADM).首先利用传输矩阵法建立了OADM的理论模型,再结合传输矩阵法和Chebyshev恒等式实现对BP-SFBG的快速分析和计算;最后给出了一个仿真设计的实例,数值结果表现出了良好的性能,为具体器件的研制提供了有益的参考. 相似文献
15.
Zhang Y. Whelan C.S. Leoni R. Marsh P.F. Hoke W.E. Hunt J.B. Laighton C.M. Kazior T.E. 《Electron Device Letters, IEEE》2003,24(9):529-531
An optoelectronic integrated circuit operating in the 1.55-/spl mu/m wavelength range was realized on GaAs substrate through metamorphic technology. High indium content layers, metamorphically grown on a GaAs substrate, were used to fabricate the optoelectronic integrated circuits (OEICs) with -3 dB bandwidth of 40 GHz and 210 V/W of calculated responsivity. The analog OEIC photoreceiver consists of a 12-/spl mu/m, top-illuminated p-i-n photodiode, and a traveling wave amplifier (TWA). This receiver shows 6 GHz wider bandwidth than a hybrid photoreceiver, which was built using comparable, but stand-alone metamorphic p-i-n diode and TWA. With the addition of a buffer amplifier, the OEIC shows 7 dB more gain than the hybrid counterpart. To our knowledge, this is the first 40 Gbit/s OEIC achieved on a GaAs substrate operating at 1.55 /spl mu/m. 相似文献
16.
Effect of temperature cycling on angular alignment in add/drop filter-module packaging 总被引:1,自引:0,他引:1
C. S. Hsieh J. M. Chen J. M. Hsu M. T. Sheen J. H. Kuang W. H. Cheng 《Journal of Electronic Materials》2003,32(3):137-141
The thermally-induced, fiber-alignment shifts of ferrule-solder-ferrule (FSF) joints in add/drop filter-module packaging for
multiplexer/demultiplexer applications have been studied experimentally and numerically. From experimental measurements of
the module-insertion loss difference (0.3 dB) with and without temperature cycling, FSF angular-tilt misalignments of up to
0.05° were found after undergoing 42 temperature cycles. The effects of an imperfect soldering process along the two ferrules
during the packaging of an add/drop filter module on the angular-tilt misalignment has been explored in this study. An elastic-plastic
finite-element method (FEM) was performed to evaluate the variation of thermal stresses, the distribution of residual stresses,
and the angular-tilt misalignment of the FSF joints. Experimental measurements of the FSF angular-tilt misalignment were in
good agreement with the FEM calculations. The major angular-tilt misalignments of FSF joints in add/drop filter-module packaging
during temperature cycling may come from the localized plastic-solder yielding introduced by the local thermal-stress variation
and the redistribution of the residual stresses within the solder. The FSF angular-tilt misalignment and, hence, fiber-alignment
shift of the add/drop filter module under temperature-cycling tests can be reduced significantly if a perfect soldering process
along the two ferrules can be fabricated. 相似文献
17.
《Solid-State Circuits, IEEE Journal of》1986,21(6):909-915
A set of three bipolar integrated circuits for a new fiber-optic link is described. The link operates at data rates of 5-200 Mb/s NRZ. The optical transmitter and receiver modules are compact and fit into standard 16-pin dual-in-line sockets. The power consumption of the transmitter module is 530 mW and the receiver module dissipates 310 mW. The optical loss budget is 20 dB, which is sufficient for link lengths of up to 5 or 6 km. The circuits have been designed in a 3-/spl mu/m bipolar process. The chip sizes are 2 mm/spl times/1.75 mm each. 相似文献
18.
A 30-Gbit/s demultiplexer IC has been fabricated and tested using an improved double mesa Si/SiGe heterojunction bipolar transistor process. This is-to our knowledge-the highest ever reported bit rate for “real” (as opposed to drift transistor) Si/SiGe HBT circuits. The result was mainly reached by scaling down the transistor sizes to reduce parasitics. The minimum emitter mesa width was 1 μm 相似文献
19.
640-Gbit/s Data Transmission and Clock Recovery Using an Ultrafast Periodically Poled Lithium Niobate Device 总被引:1,自引:0,他引:1
《Lightwave Technology, Journal of》2009,27(3):205-213