Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $mu$m

We report on the third-order optical nonlinearity of the e ₁ -e ₂ intersubband transition in GaN-AlN quantum wells and the s-p z intraband transition in GaN-AlN quantum dots, both of them in the spectral region around 1.5 mum. The results in terms of third-order susceptibility, together with the ultrafast nature of the nonlinear response, render these GaN-AlN nanostructures particularly suitable for optical switching and wavelength conversion applications.     

Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs–AlAs–AlAsSb Coupled Quantum Wells

We developed a pigtailed fiber module including an intersubband transition all-optical switch using InGaAs-AlAs-AlAsSb coupled double quantum wells and studied the absorption saturation dynamics. An increased extinction ratio was obtained by optimizing the delay time between control and signal pulses due to the reduced effect of two-photon absorption. An extinction ratio of 10 dB was obtained for a fiber input pulse energy of 16 pJ (200-fs pulsewidth). The absorption recovery time varied from 600 fs to 2 ps depending on the control pulse energy     

Lattice-Matched GaN–InAlN Waveguides at λ = 1.55 μm Grown by Metal–Organic Vapor Phase Epitaxy

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mum-wide WGs the propagation losses in the 1.5- to 1.58-mum spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.     

n-Type Ge–SiGe Quantum Cascade Structure Utilizing Quantum Wells for Electrons in the L and Γ Valleys

In this letter, we propose an n-type vertical transition bound-to-continuum Ge-SiGe quantum cascade structure utilizing electronic quantum wells in the L and Gamma valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. Under a bias of 80 kV/cm, the carriers in the lower level are extracted by miniband transport and L -Y tunneling into the subband in the Gamma well of the next period. And then the electrons are injected into the upper level by ultrafast intervalley scattering, which not only effectively increases the tunneling rate and suppresses the thermal backfilling of electrons, but also enhances the injection efficiency of the upper level. The performance of the laser is discussed.     

非统一多量子阱波长可选DFB激光器

报道了一种单片集成的串联DFB激光器芯片,在合适工作条件下,可以在疏波分复用(CWDM)的两个信道波长激射。芯片通过非统一多量子阱有源区拓宽材料增益谱,给DFB激光器的纯折射率光栅引入弱增益耦合,提高DFB激光器的动态单模特性。芯片采用普通DFB激光器的制备工艺制备,工艺简单成本低,重复性高。测试结果表明,芯片能够在1.51μm和1.53μm两个波长激射,出光功率均能达到6mW以上,边模抑制比均达到40dB。     

Analysis of Gain and Luminescence in Violet and Blue GaInN–GaN Quantum Wells

In this paper, gain in GaInN quantum wells with 8% and 19% indium is analyzed using a comparison of a microscopic model to experimental data. It is shown that localized valence states can explain the characteristics of the gain spectra, in particular the broadening features at the red side of the spectrum. From an analysis of experimental and simulation data, the nonradiative current component is extracted, and is shown to dominate the total current density at laser threshold operation. The increase of nonradiative current with density explains the drop in internal quantum efficiency in GaInN light-emitting diodes.     

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

Strain-compensated InGaN–AlGaN quantum wells (QW) are investigated as improved active regions for lasers and light emitting diodes. The strain-compensated QW structure consists of thin tensile-strained AlGaN barriers surrounding the InGaN QW. The band structure was calculated by using a self-consistent 6-band $kcdot p$ formalism, taking into account valence band mixing, strain effect, spontaneous and piezoelectric polarizations, as well as the carrier screening effect. The spontaneous emission and gain properties were analyzed for strain-compensated InGaN–AlGaN QW structures with indium contents of 28%, 22%, and 15% for lasers (light-emitting diodes) emitting at 480 (500), 440 (450), and 405 nm (415 nm) spectral regimes, respectively. The spontaneous emission spectra show significant improvement of the radiative emission for strain-compensated QW for all three structures compared to the corresponding conventional InGaN QW, which indicates the enhanced radiative efficiency for light emitting diodes. Our studies show the improvement of the optical gain and reduction of the threshold current density from the use of strain-compensated InGaN–AlGaN QW as active regions for diode lasers.      

Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots

Semiconductors - The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with...     

High‐Sensitivity p–n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots

Chemically synthesized nanocrystal quantum dots (NQDs) are promising materials for applications in solution‐processable optoelectronic devices such as light emitting diodes, photodetectors, and solar cells. Here, we fabricate and study two types of p‐n junction photodiodes in which the photoactive p‐layer is made from PbS NQDs while the transparent n‐layer is fabricated from wide bandgap oxides (ZnO or TiO₂). By using a p–n junction architecture we are able to significantly reduce the dark current compared to earlier Schottky junction devices without reducing external quantum efficiency (EQE), which reaches values of up to ～80%. The use of this device architecture also allows us to significantly reduce noise and obtain high detectivity (>10¹² cm Hz^1/2 W^?1) extending to the near infrared past 1 μm. We observe that the spectral shape of the photoresponse exhibits a significant dependence on applied bias, and specifically, the EQE sharply increases around 500–600 nm at reverse biases greater than 1 V. We attribute this behavior to a “turn‐on” of an additional contribution to the photocurrent due to electrons excited to the conduction band from the occupied mid‐gap states.     

Soft‐Lithographed Up‐Converted Distributed Feedback Visible Lasers Based on CdSe–CdZnS–ZnS Quantum Dots

The development of a solution‐deposited up‐converted distributed feedback laser prototype is presented. It employs a sol–gel silica/germania soft‐lithographed microcavity and CdSe–CdZnS–ZnS quantum dot/sol–gel zirconia composites as optical gain material. Characterization of the linear and nonlinear optical properties of quantum dots establishes their high absorption cross‐sections in the one‐ and two‐ photon absorption regimes to be 1 × 10^?14 cm² and 5 × 10⁴ GM, respectively. In addition, ultrafast transient absorption dynamics measurements of the graded seal quantum dots reveal that the Auger recombination lifetime is 220 ps, a value two times higher than that of the corresponding CdSe core. These factors enable the use of such quantum dots as optically pumped gain media, operating in the one‐ and two‐photon absorption regime. The incorporation of CdSe–CdZnS–ZnS quantum dots within a zirconia host matrix affords a quantum‐dot ink that can be directly deposited on our soft‐lithographed distributed feedback grating to form an all‐solution‐processed microcavity laser.     

Negative Tap Photonic Microwave Filter Based on a Mach–Zehnder Modulator and a Tunable Optical Polarizer

A negative tap photonic microwave filter based on a Mach-Zehnder modulator (MZM) and a tunable optical polarizer is proposed. In the proposed filter, the output light from the MZM, after experiencing a time delay difference between the two orthogonal modes in a polarization-maintaining fiber, is sent to the tunable optical polarizer. By adjusting the dc bias of the MZM and the polarization angle of the tunable polarizer with respect to the two orthogonal modes, two positive or one positive and one negative coefficient are generated. A theoretical analysis is presented which is verified by experiments. A two-tap microwave filter with two positive or one positive and one negative coefficient is demonstrated.     

Novel Optical Vector Signal Generation With Carrier Suppression and Frequency Multiplication Based on a Single-Electrode Mach–Zehnder Modulator

This investigation presents a novel modulation approach for generating optical vector signals using frequency multiplication based on double sideband with carrier suppression. A single-electrode Mach–Zehnder modulator is biased at null point with a driving signal consisting of a 10-GHz sinusoidal signal and a 5-GHz sinusoidal signal modulated with 1.25-Gb/s on–off keying, 1.25-Gb/s binary phase-shift keying data, or 625-MSym/s quadruple phase-shift keying data. After square-law photodetection, a 1.25-Gb/s radio-frequency signal at a sum frequency of 15 GHz is generated. After transmission over 50-km single-mode fiber, the power penalty of all three modulation formats is under 0.2 dB.      

Robust and Stable Ratiometric Temperature Sensor Based on Zn–In–S Quantum Dots with Intrinsic Dual‐Dopant Ion Emissions

Dual emission quantum dots (QDs) have attracted considerable interest as a novel phosphor for constructing ratiometric optical thermometry because of its self‐referencing capability. In this work, the exploration of codoped Zn–In–S QDs with dual emissions at ≈512 and ≈612 nm from intrinsic Cu and Mn dopants for ratiometric temperature sensing is reported. It is found that the dopant emissions can be tailored by adjusting the Mn‐to‐Cu concentration ratios, enabling the dual emissions in a tunable manner. The energy difference between the conduction band of the host and Cu dopant states is considered as the key for the occurrence of Mn ion emission. The as‐constructed QD ratiometric temperature sensor exhibits a totally robust stability with a fluctuation of ≈I_Cu/I_tot versus times lower than 1% and almost no hysteresis in cycles over a broad window of 100–320 K. This discovery represents that the present cadmium‐free, intrinsic dual‐emitting codoped QDs can open a new door for the synthesis of novel QDs with stable dual emissions, which poise them well for challenging applications in optical nanothermometry.     

Single Photon Detection of InGaAs／InP APD Based on Gated-mode Operation at Telecom Wavelengths

Based on the commercially available avalanche photodiodes, the basic needs of gated-mode operation for single photon are discussed. Gated-mode technique based on the experimental data for detection of single photon is analyzed at communication wavelengths so that the basic operation parameters can decide properly for efficient detection of single photon. The bias voltage has related to the punch-through voltage in combining the cooling technique with synchronization to decrease the dark counts.     

Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells

Semiconductors - The possibility of significant lowering of the interband lasing threshold in laser structures of the mid-infrared region based on HgCdTe with HgTe quantum wells by doping with...     

Optically Modulated Threshold Switching in Core–Shell Quantum Dot Based Memristive Device

The threshold switching (TS) phenomenon in memristors has drawn great attention for its versatile applications in selectors, artificial neurons, true random number generators, and electronic integrations. The transition between nonvolatile resistive switching and volatile TS modes can be realized by doping, varying annealing and voltage sweeping conditions, or imposing different compliance current. Here, a strategy is reported to achieve such transition by the noninvasive UV light stimulus based on InP/ZnS quantum dot (QD) memristor. The core–shell InP/ZnS QDs with quasi‐type II band alignment ensures photoexcited electrons localized in InP core, photoexcited hole state distributed in the outer shell, and subsequent lifetime controlling of conductive filament under light irradiation. Systematic mechanism investigations indicate that UV photogenerated holes are accumulated on the surface of the QD film, which is consistent with rapid transfer of photogenerated holes in the core–shell InP/ZnS structure. Based on the light‐modulated effect, a reconfigurable 9 × 9 visual data storage array with a key pattern and a simple leaky integrate‐and‐fire circuit are constructed. These results suggest the potential of direct optical modulation of memory mode through energy band engineering, leading to future optoelectronic and electronic device for the implementation of neuromorphic visual system and artificial neural networks.     

Three-Band White Light-Emitting Diodes Based on Hybridization of Polyfluorene and Colloidal CdSe–ZnS Quantum Dots

The authors have demonstrated the hybridization of polyfluorene (PFO) polymer light-emitting diodes with CdSe–ZnS core/shell quantum dots (QDs) in different device structures. To achieve white light emission, the green and red QDs have been incorporated into the PFO as the single emissive layer. Furthermore, the whole structures were also optimized to engineer the emission spectra. Accordingly, the incorporation of QDs increased the turn-on voltage from 10 to 23 V in device with the blend ratio of PFO : green QD : red QD being 6 : 1 : 1, while the maximum brightness was dramatically decreased.      

Effect of Coupled Double-Quantum-Well Design on Pump-Induced Refractive-Index Change in AlAsSb–InGaAs–AlAs Optical Waveguides

Optimization of the AlAsSb–InGaAs–AlAs coupled double-quantum-wells in optical waveguide core for optimal pump-induced refractive-index change indicates that thin AlAs center barrier leads to larger refractive-index change, and the InGaAs double-quantum-wells have an optimum thickness of which maximum refractive-index change is obtained. Analysis shows that the cross phase-modulation efficiency of these optical waveguides is highly dependent on optical confinement and is limited to approximately 0.05 rad/pJ in the 1550 nm region as far as the cross phase-modulation based on free-carrier mass dispersion effect is concerned.      

Superior Micro‐Supercapacitors Based on Graphene Quantum Dots

Graphene quantum dots (GQDs) have attracted tremendous research interest due to the unique properties associated with both graphene and quantum dots. Here, a new application of GQDs as ideal electrode materials for supercapacitors is reported. To this end, a GQDs//GQDs symmetric micro‐supercapacitor is prepared using a simple electro‐deposition approach, and its electrochemical properties in aqueous electrolyte and ionic liquid electrolyte are systematically investigated. The results show that the as‐made GQDs micro‐supercapacitor has superior rate capability up to 1000 V s^?1, excellent power response with very short relaxation time constant (τ₀ = 103.6 μs in aqueous electrolyte and τ₀ = 53.8 μs in ionic liquid electrolyte), and excellent cycle stability. Additionally, another GQDs//MnO₂ asymmetric supercapacitor is also built using MnO₂ nanoneedles as the positive electrode and GQDs as the negative electrode in aqueous electrolyte. Its specific capacitance and energy density are both two times higher than those of GQDs//GQDs symmetric micro‐supercapacitor in the same electrolyte. The results presented here may pave the way for a new promising application of GQDs in micropower suppliers and microenergy storage devices.