磁控溅射工艺参数对Cu薄膜电阻率的影响

在确定Cu薄膜临界尺寸的基础上,选定基底温度、靶基距、溅射功率和工作气压为影响因素设计正交试验,研究了磁控溅射制备工艺对Cu薄膜电阻率的影响。研究结果表明:基底温度是影响薄膜电阻率的最主要因素,电阻率随着基底温度的升高而减小;在工艺条件为基底温度200℃、靶基距45 mm、溅射功率100 W、工作气压0.5 Pa时,所制薄膜的电阻率将会达到最小。最后,结合薄膜微观形貌对试验结论进行了分析,并对最佳工艺条件进行了实验验证。     

激光冲击处理工艺因素对铝合金疲劳寿命影响的研究

约束层和激光脉冲功能和密度是影响激光冲击处理强化效果的重要工艺因素,本文研究了不同的约束层和激光脉冲功率密度对铝合金疲劳寿命的影响。疲劳试验结果表明,约束层冲击阻抗越大,激光脉冲功率密度越高,铝合金激光冲击处理后疲劳寿命的提高越显著。     

Analysis of coverage probability in NOMA-HetNet based on Matern cluster process

Considering the correlation between the users and base stations and the network irregularity,the non-orthogonal multiple access heterogeneous networks (NOMA-HetNet) based on Matern cluster process (MCP) was modeled.The coverage probability of UEs was analyzed.Firstly,the signal-to-interference-plus-noise ratios (SINR) of UEs were theoretically derived.Secondly,an updating law for the upper limit of SINR was presented for the imperfect serial interference elimination (SIC) scheme,which was more consistent with the reality.Then,using the mathematical tools such as spatial coordinate system,probability theory,stochastic geometry theory and order statistics,the correlation probability and service distances of the different types of UEs were analyzed.Finally,the theoretical expression of the coverage probability of UEs was derived.The effects of cluster radius,base station density,interference residual factors on service distances,and coverage probability are verified by numerical simulations.The simulation results are consistent with the theoretical analysis,which testifies the correctness of the theoretical analysis.     

CCD小尺寸接触孔金属化的工艺优化

对铝金属化工艺中存在的台阶覆盖率低和铝穿刺问题进行了讨论和分析,在此基础上对CCD铝金属化工艺进行了优化.采用冷铝+热铝两步淀积的方法,提高了铝膜对小尺寸接触孔的台阶覆盖率;采用TiN作为阻挡层抑制了铝穿刺.     

纸基RFID标签天线印刷工艺参数的优化试验

材料与制作工艺造成的成本过高是RFID标签普及化应用的障碍。应用导电银浆与丝网印刷技术,可以解决RFID标签的低成本化问题。本文以丝网印刷技术在纸基材上印刷导电银浆而制作出RFID标签天线,研究了丝网印刷天线的工艺参数,讨论了工艺参数对制作RFID标签性能的影响,并通过优化试验对刮板施加给网版的压力,印刷速度,导电银浆固化温度与时间等制作工艺参数进行优化,得出最佳工艺参数,并制作出满足电阻特性的RFID标签天线。     

磁控溅射中生长参数对氧化锌薄膜性能的影响

介绍了氧化锌的应用和制备方法 ,着重研究了磁控溅射中各生长参数如衬底温度、氧分压及工作压强对氧化锌薄膜结晶质量和电学性能的影响     

氮分压对磁控溅射制备TaN薄膜性能的影响

采用直流反应磁控溅射法制备了TaN薄膜,研究了φ(N2)对薄膜的结构和性能影响。研究发现,在N2分压(体积分数)为9%时,多相共存的TaN薄膜表现出TaN(200)面择优取向,方阻和αt达到最佳,其值为52Ω/□和–306×10–6/℃。薄膜的方阻、电阻温度系数αt和晶粒尺寸都随着N2分压的增大而增大:当N2分压高于11%时,薄膜的方阻和αt增长较快。     

Effects of process current density and temperature on electrochemical boriding of steel in molten salts

In this study, the effects of current density and bath temperature on the hardness, thickness, and morphology of boride layer are systematically investigated. The electrochemical boride coating on steel substrates is carried out at various current densities (50–700 mA/cm²) and bath temperatures (800–1000°C) at constant electrolyte composition and electrolysis time. The FeB, Fe₂B, and Fe₃B phases are detected by the x-ray diffraction method. The hardness of the boride layer reaches approximately 1800 HV on the surface and gradually decreases toward the matrix. The optimum current density and electrolyte temperature for the boriding of low-alloy steel are determined as 200 mA/cm² and 900°C, respectively.