共查询到20条相似文献,搜索用时 15 毫秒
1.
Y. S. Hwang S. H. Paek Y. S. Song H. C. Cho J. S. Choi J. K. Jung J. K. Lee S. I. Lee J. G. Lee 《Journal of Materials Science: Materials in Electronics》1994,5(3):163-167
Stable TiSi2 was formed by rapid thermal annealing (RTA) on single-crystal Si. Subsequently a 600 nm-thick Al-1%Si-0.5%Cu layer was deposited on the top of the formed TiSi2 followed by furnace annealing for 30 min at 400–600 C in N2 ambient atmosphere. The thermal stability of Al-1%Si-0.5%Cu/TiSi2 bilayer and interfacial reaction were investigated by employing four-point probe, scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). The composition and the phase of precipitates formed by the reaction of Al-1%Si-0.5%Cu with TiSi2 were studied by energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). It was found that the TiSi2 layer was consumed by the reaction between TiSi2 and Al-1%Si-0.5%Cu layer, resulting in precipitates at 550 C. The results from EDS revealed that the precipitates were composed of Ti, Al and Si. The precipitates were identified as Ti7Al5Si12 ternary compound from XRD analysis. 相似文献
2.
Ba2TiSi2O8(BTS)玻璃陶瓷具有压电性、热释电性和非线性光学性能。采用溶胶凝胶法制备了BTS玻璃陶瓷,利用差热分析仪(DTA)分析了BTS干凝胶在煅烧过程中的化学反应及能量变化;X射线衍射仪(XRD)研究了BTS粉体的物相组成;激光粒度仪分析了BTS粉体的颗粒度;扫描电子显微镜(SEM)表征了BTS玻璃陶瓷样品断面的微观结构。研究结果表明:合成BTS粉体的最佳温度为850℃,所得颗粒的平均粒径为1.73μm。1250℃烧结制得的BTS玻璃陶瓷表现出致密、孔少、均匀的外观性质。 相似文献
3.
O. P. Balkashin A. G. M. Jansen O. Laborde U. Gottlieb G. L. Sukhodub P. Wyder I. K. Yanson 《Journal of Low Temperature Physics》2002,129(3-4):105-116
High-frequency point-contact spectroscopy as well as conventional low-frequency PC spectroscopy has been used for determining the spectral functions of the electron-phonon interaction (EPI) for three disilicides TiSi2, TaSi2, and VSi2. The temperature dependences of resistivity have been calculated from obtained EPI functions. Comparison of calculated dependences with known experimental data allowed correction of the electron-phonon interaction constants for the studied disilicides. 相似文献
4.
5.
《Thin solid films》1986,138(2):235-243
The effect of the preparation technique of TiSi2 films on their properties is discussed. Films formed by the diffusion of silicon into a titanium layer evaporated on top of an Si/SiO2/n+-poly-Si structure (where poly-Si is poltcrystalline silicon) have some unfavorable properties for metal/oxide/semiconductor technology. A significant improvement can be achieved using the co-evaporation technique to form the silicide layer. Superior silicides are obtained by sintering the co-evaporated TiSi2 using short-time annealing. 相似文献
6.
7.
高导电性TiSi2薄膜对低频电磁波有高反射率.在玻璃基片上成功制备TiSi2薄膜有望开发形成一种新型低辐射镀膜玻璃.本文结合工业在线和大面积生产的特点,以常压化学气相沉积法研究了TiSi2在玻璃基板上生长、制备及其与性能间的关系.研究发现:反应在温度低于680℃时,为反应控制;在高于680℃时,为传质控制.在700℃,Si/Ti摩尔比为3时,生成的TiSi2为低电阻的正交面心晶型(C54)TiSi2.Ti5Si3相和Si相的存在,对薄膜电阻的降低不利.TiSi2晶相含量越多,结晶越好,则电阻越小. 相似文献
8.
Low resistivity C54-TiSi2 is currently the most commonly used silicide for metal contacts in ultralarge scale integrated circuits devices. In the present
paper, we review recent results of investigations on the effects of stress and high temperature sputtering on the formation
of C54-TiSi2. Enhanced formation of C54-TiSi2 on (001)Si by tensile stress and high temperature sputtering is correlated to the growth of thicker amorphous interlayer
at the Ti/(001)Si interface. The enhanced transformation is attributed to the presence of higher density of silicide crystallites,
which serve as the nucleation sites for the C49-TiSi2, in the amorphous layer. As a result, the average grain size of C49-TiSi2 is smaller which leads to lower C49- to C54-TiSi2 transformation temperature. 相似文献
9.
飞秒激光诱导玻璃内Ba2TiSi2O8晶体的析出 总被引:1,自引:0,他引:1
使用聚焦后的800nm,150fs,250kHz的高重复频率飞秒脉冲激光器能够在BaO-TiO2-SiO2组分的玻璃内部三维选择性地诱导Ba2TiSi2O8晶体的析出. 发光光谱显示这种晶体把入射的800nm光转化成了400nm的蓝光,因此这种析出的晶体具有非线性倍频特性. 通过拉曼光谱测定,在当前的玻璃组分中析出的晶体是Ba2TiSi2O8. 研究表明,经250kHz的飞秒激光辐照一段时间后,在玻璃内部由于脉冲能量的连续沉积会使得激光辐照区域出现热积累效应,因此,该辐照区域的温度会不断升高以致超过玻璃析晶温度,最终诱导玻璃熔融析晶. 此外,对飞秒激光辐照区域不同部位进行拉曼光谱检测,结果表明:在整个区域Ba2TiSi2O8晶体的析出呈现中间比外围明显的分布特点,因此晶体析出与辐照形成的温度梯度场有密切关系. 相似文献
10.
A. Halliyal A. S. Bhalla R. E. Newnham L. E. Cross 《Journal of Materials Science》1981,16(4):1023-1028
Pyroelectric glass-ceramics of composition Ba2TiGe2O8 and Ba2TiSi2O8 were prepred by crystallizing the glasses in a temperature gradient. High pyroelectric responses up to 50% of the single-crystal values were observed because of the high degree of orientation of the crystallites in the glass-ceramic samples. The piezoelectric and dielectric properties of the glasses and the glass-ceramics are also consistent with the properties of the single crystals. 相似文献
11.
《Materials Letters》2005,59(8-9):885-888
Investigated by ab initio plane-wave ultrasoft pseudopotential method based on generalized gradient approximation (GGA), it has been found that the formation energies of the vacancies in C54 TiSi2 largely depend on the atomic chemical potentials of Ti and Si. In Si-rich limit, the formation energies of the Si and Ti vacancy are 2.39 eV and 2.40 eV while they are 1.53 eV and 4.07 eV in Ti-rich limit, respectively. The introduction of Si or Ti vacancy only slightly changes total density of states (DOS) and it also causes no considerable charge transfer. 相似文献
12.
Microstructural characterization of grain-oriented glass-ceramics in the system Ba2 TiSi2O8-SiO2 总被引:1,自引:0,他引:1
In polycrystalline fresnoite, advantage of the piezo- and pyroelectric properties can be taken only if texturing along its polar [0 0 1]-axis can be achieved. We report on a novel technique to prepare grain-oriented glass-ceramics in the system fresnoite-SiO2 by electrochemically induced nucleation. Optimum conditions for grain orientation were determined by characterizing the microstructure of glass-ceramics prepared at 1150, 1200 and 1350 °C using electron microscopy and X-ray texture goniometry. At 1150 °C—due to the smallest crystal growth rate and highest nucleation rate—the most distinct orientation is obtained. The solidification of the glass-ceramic consist of three subsequent steps. First, dendritic fresnoite crystallizes most rapidly along its [0 0 1]-axis with [1 1 0] facet planes. Due to growth selection, the polar {c}-axes become oriented. Secondly, within the interdendritic areas, the pseudo-binary eutectic fresnoite-silica solidifies lamellarly. Finally, in the middle of the interspaces, a crystalline barium silicate coexisting with glassy silica is formed at 1200 °C and 1350 °C. At 1150 °C, however, a glass with the composition of the melt solidifies. 相似文献
13.
14.
V. M. Ievlev S. B. Kushchev S. A. Soldatenko A. Yu. Isaev V. I. Rubtsov 《Inorganic Materials》2001,37(12):1256-1260
The microstructure and orientation of TiSi2films produced by pulsed illumination of Ti layers on (111) Si with incoherent light and by vacuum evaporation of Ti onto heated (111) Si substrates were studied by transmission electron microscopy. Both theC49- and C54-TiSi2grains were found to have a number of orientations satisfying the basic crystallographic rules: a high density of coinciding sites at the interface and continuity of high-density planes across the interface. The TiSi2/Si interfaces studied were shown to be incoherent. The major structural defects in TiSi2layers were identified. 相似文献
15.
The effect of barium titanium silicate additions to pure and manganese-doped barium titanate was studied by high-temperature conductivity and analytical electron microscopy. The results show that this addition precipitates during cooling as a second crystalline phase with only a small amount of amorphous phase left in a few grain boundaries. The secondary crystalline phase incorporates excess manganese left from the heterogeneous doping of barium titanate. 相似文献
16.
17.
18.
本文报道了掺C60磷酸盐玻璃显微结构特征的研究结果。透射电子显微镜观察表明:在玻璃介质中,C60分子晶体能以结晶固体的形式稳定存在。 相似文献
19.
Crystallization behavior of the glass system AlF3-MgF2-CaF2-SrF2-BaF2-YFa-TeO2 (AMCSBY-TeO2) was studied by the nonisothermal method using differential thermal analysis. The activation energy E and Avrami exponent g were determined by nonisothermal method. It is found that the value of E varies with increasing TeO2 and reaches a minimum at 10 mol fraction TeO2, while g decreases from 3.65 to 1.78 with the addition of TeO2. X-ray diffraction shows that Ba2TeaOs, MgTe205, and SrTeOa phase formed when the glasses were reheated. The addition of TeO2 changes the crystallization mechanism and improves the stability of the fluoroaluminate glass. 相似文献
20.
Visible and near-infrared photoluminescence (PL) at room temperature is reported from Si nanowires (NWs) grown by chemical vapor deposition from TiSi2 catalyst sites. NWs grown with average diameter of 20 nm were etched and oxidized to thin and passivate the wires. The PL emission blue shifted continuously with decreasing nanowire diameter. Slowed oxidation was observed for small nanowire diameters and provides a high degree of control over the emission wavelength. Transmission electron microscopy, PL, and time-resolved PL data are fully consistent with quantum confinement of charge carriers in the Si nanowire core being the source of luminescence. These light emitting nanowires could find application in future CMOS-compatible photonic devices. 相似文献