ZnO纳米线场效应管的制备及光电特性

本文采用水热法生长的ZnO纳米线制得悬浮ZnO纳米线场效应晶体管,该场效应管的跨导为0.396μS,迁移率为50.17cm^2/Vs,VGS = 0 V时电阻率为0.96×102Ωcm,开关态电流比（Ion/Ioff）为10^5。该效应管在紫外下曝光（2.5μw/cm2）后显示了穿通现象和开启电压漂移（从-0.6V 到 +0.7V）,且由于漏极感应势垒的降低,使得源漏电流减少一半（从560nA到320nA）。悬浮ZnO纳米线场效应管的这些性质揭示了它的一些内在属性和器件方面的应用。     

Fabrication and photoelectrical characteristics of ZnO nanowire field-effect transistors

rease by almost half of the source-drain current (Ids, from 560 nA to 320 nA) due to drain-induced barrier lowering.Continued work is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.     

High-yield GaN nanowire synthesis and field-effect transistor fabrication

This letter describes a simple way to grow high-quality GaN nanowires in a specific area. The relationship between catalyst formation and nanowire growth was addressed. High-yield gallium nitride nanowire field-effect transistors were demonstrated successfully using a prealigned process: Ni catalysts with a diameter of 200 nm were deposited selectively at predetermined positions. GaN nanowires were then grown by vapor-liquid-solid mechanism in a chemical vapor deposition (CVD) reactor. Fabricated GaN nanowire FETs showed a high current density along with good saturation and pinch-off characteristics. These authors contributed equally to this work.     

The color change in polychromatic organic light-emitting field-effect transistors: Optical filtering versus reemission

In this contribution the color conversion process of a polychromatic organic light-emitting field-effect transistor (OLET) is revisited on the basis of an analytic device model. The device of interest consists of a color conversion layer out of rubrene on top of a monochromatic light-emitting transistor based on poly(9,9-di-n-octyl-fluorene-alt-benzothiadiazole) (F8BT). The model describes the relation of color coordinate and emission intensity – set by the applied drain and gate biases – linking the optoelectronic response of the employed monochromatic OLET to the optical processes occurring in the color conversion layer. The model shows that the color shift is rather due to partial absorption of the F8BT emission by rubrene than, as was claimed earlier, due to a color conversion process by absorption and reemission in the conversion layer. In addition to the earlier publication, it will be demonstrated that such a device allows for an independent electrical tunability of emission intensity and color coordinate within the color span of the F8BT and the rubrene spectrum being a unique feature of such a polychromatic light-emitting field-effect transistor.     

基于自组装工艺的ZnO纳米线网络晶体管

本文提出了一种,制备均匀高密度ZnO纳米线网络的简单高效的自组装方法。在此方法中,ZnO纳米线经3-氨丙基三乙氧基硅烷修饰后,其表面出现带正电的氨基功能团。经亲水性处理后的SiO2层在水中带负电,从而凭借静电吸引作用,修饰后的ZnO纳米线吸附在SiO2/Si基底,形成纳米线网络。利用此纳米线网络制备得场效应晶体管。纳米线密度为2.8/μm2的晶体管,其电流开关比为2.4×105,跨导为336 nS, 场效应迁移率为27.4 cm2/V?s.     

Short-channel effect and device design of extremely scaled tunnel field-effect transistors

For serving as ideal switching devices in future energy-efficient applications, scaling down the channel lengths of tunnel-field effect transistors (TFETs) is essential to follow the pace of Si-based CMOS technologies. This work elucidates the short-channel mechanisms and the role of the drain in extremely-scaled TFETs. The scalability of TFETs depends strongly on the appropriately low drain concentration, whereas the capability of the drain for scaling relies on a sufficient drain region. The drain with a light concentration of 5 × 10¹⁷ cm⁻³ and a minimum length of 20 nm enables 5 nm TFETs to exhibit favorable on–off switching characteristics. In sub-20 nm TFETs, the total drain and channel lengths must satisfy the minimum criteria of approximately 25 nm to sustain reversely biased drain voltage of 0.7 V. The asymmetric Si_1−xGe_x source heterojunction is combined with the minimum drain design in 5 nm TFETs to separately optimize the source- and drain-side tunnel junctions, generating ideal on-/off-currents and switching characteristics to serve as a promising design approach of sub-5 nm TFETs.     

关于短沟道双栅无结型晶体管的仿真研究

We study the characteristics of short channel double-gate(DG) junctionless(JL) FETs by device simulation. OutputⅠ-Ⅴcharacteristic degradations such as an extremely reduced channel length induced subthreshold slope increase and the threshold voltage shift due to variations of body doping and channel length have been systematically analyzed.Distributions of electron concentration,electric field and potential in the body channel region are also analyzed.Comparisons with conventional inversion-mode(IM) FETs,which can demonstrate the advantages of JL FETs,have also been performed.     

A circuit-compatible analytical device model for ballistic nanowire transistors

Silicon nanowire transistors (SNWTs) have attracted broad attention as a promising device structure for future integrated circuits. Silicon nanowires with a diameter as small as 2 nm and having high carrier mobility have been achieved. Consequently, to develop TCAD tools for SNWT design and to model SNWT for circuit-level simulations have become increasingly important. This paper presents a circuit-compatible closed-form analytical model for ballistic SNWTs. Both the current–voltage (I–V) and capacitance–voltage (C–V) characteristics are modeled in terms of device parameters and terminal voltages. Such a model can be efficiently used in a conventional circuit simulator like SPICE to facilitate transistor-level simulation of large-scale nanowire or mixed nanowire-CMOS circuits and systems.     

Submicron-meter tunneling field-effect poly-Si thin-film transistors with a thinned channel layer

Submicron-meter poly-Si tunneling-effect thin-film transistor (TFT) devices with a thinned channel layer have been investigated. With reducing the gate length to be shorter than 1 μm, the poly-Si TFT device with conventional MOSFET structure is considerably degraded. The tunneling field-effect transistor (TFET) structure can be employed to alleviate the short channel effect, thus largely suppressing the off-state leakage. However, for a poly-Si channel layer of 100 nm thickness, the TFET structure causes a small on-state current, which may not provide well sufficient driving current. By reducing the channel layer thickness to be 20 nm, the on-state current for the TFET structure can be largely increased, due to the enhanced bending of energy band for a thinned channel layer. As a result, for the TFET poly-Si TFTs at a gate bias of 5 V and a drain bias of 3 V, a 20-nm channel layer leads to an on-state current of about 1 order larger than that by a 100-nm channel layer, while still keeping an off-state leakage smaller than 0.1 pA/μm. Accordingly, the submicron-meter TFET poly-Si TFT devices with a thinned channel layer would show good feasibility for implementing high packing density of poly-Si TFT devices.     

Contactless charge carrier mobility measurement in organic field-effect transistors

With the increasing performance of organic semiconductors, contact resistances become an almost fundamental problem, obstructing the accurate measurement of charge carrier mobilities. Here, a generally applicable method is presented to determine the true charge carrier mobility in an organic field-effect transistor (OFET). The method uses two additional finger-shaped gates that capacitively generate and probe an alternating current in the OFET channel. The time lag between drive and probe can directly be related to the mobility, as is shown experimentally and numerically. As the scheme does not require the injection or uptake of charges it is fundamentally insensitive to contact resistances. Particularly for ambipolar materials the true mobilities are found to be substantially larger than determined by conventional (direct current) schemes.     

High operational stability of solution-processed organic field-effect transistors with top-gate configuration

Electrical characteristics of top-gate field-effect transistors based on a wide range of solution-processed organic semiconductors are systematically investigated. The top-gate field-effect transistors based on different organic semiconductors—from an amorphous polymer semiconductor to a polycrystalline molecular semiconductor—exhibit higher operational stability compared with bottom-gate organic field-effect transistors reported in literature, in spite of significant difference in field-effect mobility. The correlation between charge transport and operational stability is discussed to gain insight into high operational stability of top-gate organic field-effect transistors.     

Alternating dithienobenzoxadiazole-based conjugated polymers for field-effect transistors and polymer solar cells

Three new alternating copolymers derived from dithienobenzoxadizole (DTfBO) and different thiophene-based π-spacers, including terthiophene, quarterthiophene, and dithienyl flanked thienothiophene, were successfully synthesized. The DTfBO-based polymers possess optical band-gaps in the range of 1.84–1.89 eV and exhibit relatively deep HOMO levels between −5.36 eV and −5.50 eV. Due to strong interchain aggregation, DTfBO-based polymers could not be well dissolved in chlorobenzene at room temperature, but they could be processed with hot chlorobenzene solutions of ∼100 °C. Evolutions of UV absorption spectra of polymer solutions during heating process could differentiate their different aggregation ability, among which a repeating unit based on a DTfBO and a terthiophene could supply the strongest inter-chain interaction. Notably, the three DTfBO-based polymers displayed high field-effect hole mobilities between 0.21 and 0.54 cm²/(V s). In polymer solar cells (PSCs) with the three polymers as the donors, high open-circuit voltages between 0.87 and 0.93 V could be realized. For active layer thickness of 80 nm, the PSCs displayed power conversion efficiency (PCE) between 2.85% and 5.07%. A very high fill factor of 75.4% was achieved for the polymer comprising dithienyl flanked thienothiophene. With thicker ative layers of 250 nm, the three DTfBO-based polymers exhibited comparable PCEs of ∼5.61% due to obviously increased short-circuit currents. Our results suggest that DTfBO, a big coplanar heterocycle, is a promising building block to construct high mobility conjugated polymers for efficient thick-film PSCs.     

Analytical solution of fundamental surface potential equations for symmetric double-gate metal-oxide-semiconductor field-effect transistors

Both the fundamental surface potential equations for undoped and doped symmetric double-gate MOSFETs are transcendental equations with exponentials, to which a general analytical solution is introduced. Given the lowest potential in the channel film, this solution can calculate the surface potentials of both undoped and doped symmetric double-gate MOSFETs accurately. This analytical approach could also be applied to solve other similar device equations with exponential transcendent structures.     

Downscaling of n-channel organic field-effect transistors with inkjet-printed electrodes

In this contribution we demonstrate for the first time a downscaled n-channel organic field-effect transistors based on N,N′-dialkylsubstituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) with inkjet printed electrodes. First we demonstrate that the use of a high boiling point solvent is critical to achieve extended crystalline domains in spin-coated thin films and thus high electron mobility >0.1 cm² V⁻¹ s⁻¹ in top-gate devices. Then inkjet-printing is employed to realize sub-micrometer scale channels by dewetting of silver nanoparticles off a first patterned gold contact. By employing a 50 nm crosslinked fluoropolymer gate dielectric, ∼200 nm long channel transistors can achieve good current saturation when operated <5 V with good bias stress stability.     

Enhanced performance of room temperature ammonia sensors using morphology-controlled organic field-effect transistors

Developing electronic sensors for ammonia (NH₃) is very useful for environmental monitoring and diagnostic purposes. In this work, a highly sensitive, organic field-effect transistor (OFET) based, room temperature sensor for NH₃ has been fabricated using dinaphtho [2,3-b:2′,3′-f]thieno [3,2-b]thiophene (DNTT), which showed a fast response to low concentration of the analyte down to 100 ppb. A thin film of solution-processed polymethyl methacrylate (PMMA) has been used as the gate dielectric material and its hydrophobic surface promoted structured growth of organic semiconductor, DNTT, by inducing mass transfer. By controlling the thickness and thereby exploiting the growth dynamics of the semiconductor film, the sensor performance was improved. The sensitivity of the device towards 1 ppm of NH₃ was almost doubled with a thinner and porous film of DNTT as compared to that with a thick film. Morphological studies of the sensing layers, using atomic force microscopy (AFM), have established this structure-property relation. The variations in different transistor parameters have been studied with respect to different analyte concentrations. The p-channel devices in the enhancement mode showed depletion upon exposure to NH₃. The devices exhibited a fast response and good recovery to the initial state within 2 min.     

Non-functionalized soluble diketopyrrolopyrrole: Simplest p-channel core for organic field-effect transistors

We report the synthesis, characterization and behavior in field-effect transistors of non-functionalized soluble diketopyrrolopyrrole (DPP) core with only a solubilizing alkyl chain (i.e. –C₁₆H₃₃ or –C₁₈H₃₇) as the simplest p-channel semiconductor. The characteristics were evaluated by UV–vis and fluorescence spectroscopy, X-ray diffraction, cyclic voltammetry (CV), thermal analysis, atomic force microscopy (AFM) and density functional theory (DFT) calculation. For top-contact field-effect transistors, two types of active layers were prepared either by a solution process (as a 1D-microwire) or thermal vacuum deposition (as a thin-film) on a cross-linked poly(4-vinylphenol) gate dielectric. All the devices showed typical p-channel behavior with dominant hole transports. The device made with 1D-microwiress of DPP-R18 showed field-effect mobility in the saturation region of 1.42 × 10^?2 cm²/V s with I_ON/I_OFF of 1.82 × 10³. These findings suggest that the non-functionalized soluble DPP core itself without any further functionalization could also be used as a p-channel semiconductor for low-cost organic electronic devices.     

Electrical transport properties in electroless-etched Si nanowire field-effect transistors

We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag⁺ ions on the wafer surface. The FET performance of the as-synthesized Si nanowires was investigated and compared with Ag-nanoparticles-removed Si nanowires. In addition, high-k HfO₂ gate dielectric was applied to the Si nanowires FETs, leading to the enhanced performance such as higher drain current and lower subthreshold swing.     

Electrical characterization of mica as an insulator for organic field-effect transistors

Electrical properties of conjugated polymer films, including poly(3-hexylthiophene)-2,5-diyl (P3HT), poly(3,3-didodecylquarterthiophene) (PQT-12), and poly(triarylamine) (PTAA), on mica substrates have been studied. The test structure was similar to a standard organic field-effect transistor but with a 150-μm-thick commercially available mica gate insulator/substrate, which allowed to obtain a field-effect mobility of P3HT as high as 0.08 cm²/Vs in the linear regime in ambient air. The influence of interface treatment, thermal annealing, and measurement conditions on the electrical properties of the P3HT films has been characterized and analyzed. We also studied the time dependence of the carrier concentration and mobility before and after a thermal annealing process. The results indicate that mica is a promising insulator for organic field-effect transistors, apart from already being one of the common thin-film materials widely used in electric capacitors.     

Direct investigations of the interface impedance of organic field-effect transistors with self-assembled-monolayer-modified electrodes

It has been demonstrated that the modification of electrodes with self-assembled monolayers (SAMs) reduces the contact resistance and improves the device performances of organic field-effect transistors (OFETs). However, it has been difficult to judge if the contact resistance was reduced by the change in the electronic properties or by the change in the morphology of the metal–organic interface caused by the SAM modification because they have been difficult to be separately assessed. We have directly investigated the local impedance and the potential difference at the electrode–channel interfaces of the OFETs with and without modification of the electrodes by a pentafluorobenzenethiol SAM using frequency-modulation scanning impedance microscopy (FM-SIM). The potential profile measurement and the FM-SIM measurement at the interface showed that the improvement of the field-effect mobility in the SAM-modified OFET was caused by the reduction of the energy level mismatch, namely, the hole injection barrier at the source–channel interface, presumably with the reduction of the hole trap sites at the source–channel interface.     

Dielectric surface-polarity tuning and enhanced operation stability of solution-processed organic field-effect transistors

The electrical performance of triethylsilylethynyl anthradithiophene (TES-ADT) organic field-effect transistors (OFETs) was significantly affected by dielectric surface polarity controlled by grafting hexamethyldisilazane and dimethyl chlorosilane-terminated polystyrene (PS-Si(CH₃)₂Cl) to 300-nm-thick SiO₂ dielectrics. On the untreated and treated SiO₂ dielectrics, solvent–vapor annealed TES-ADT films contained millimeter-sized crystals with low grain boundaries (GBs). The operation and bias stability of OFETs containing similar crystalline structures of TES-ADT could be significantly increased with a decrease in dielectric surface polarity. Among dielectrics with similar capacitances (10.5–11 nF cm⁻²) and surface roughnesses (0.40–0.44 nm), the TES-ADT/PS-grafted dielectric interface contained the fewest trap sites and therefore the OFET produced using it had low-voltage operation and a charge-carrier mobility ∼1.32 cm² V⁻¹ s⁻¹, on–off current ratio >10⁶, threshold voltage ∼0 V, and long-term operation stability under negative bias stress.