High-power scaling (>100 W) of a diode-pumped TEM/sub 00/ Nd:GdVO/sub 4/ laser system

We present results of an investigation to scale a diode-pumped A Nd:GdVO/sub 4/ laser system to high powers (>100 W) using a bounce amplifier configuration. A Nd:GdVO/sub 4/ laser oscillator with a bounce amplifier geometry, pumped by a single 40-W diode bar, gave 24 W of multimode output power (60% optical efficiency), and 20 W of TEM/sub 00/ output with M/sup 2/<1.05. Power scaling of the oscillator system with pumping by multiplexing two (nominally) 40-W diode bars gave 50.1 W of multimode output at 83-W diode pumping, 40 W of predominantly TEM/sub 00/ output from 81-W of diode pumping, and 34 W TEM/sub 00/ output (M/sup 2//sub x/=1.05,M/sup 2//sub y/=1.1) with an external slit spatial filter. Higher power scaling is achieved by using a master-oscillator power-amplifier (MOPA) configuration with the double-diode-pumped oscillator and a bounce amplifier pumped by a 3-bar diode stack. A multimode MOPA output of 100 W is achieved by single pass amplification with 145-W amplifier diode pumping and 104-W TEM/sub 00/ mode using a double bounce amplifier configuration with 180-W amplifier diode pumping.     

Laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO/sub 4//KTP Green laser with GaAs saturable absorber

The intracavity photon density is assumed to be Gaussian spatial distributions, and the nonlinear loss that is due to second-harmonic generation (SHG) to the photon-density equation is given under Gaussian spatial distributions in the rate equations for a laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO/sub 4//KTP laser with a GaAs saturable absorber. These space-dependent rate equations are solved numerically. The dependences of pulsewidth, pulse repetition rate, single-pulse energy, and peak power on incident pump power are obtained for the generated-green-laser pulses. In the experiment, a laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO/sub 4//KTP laser with a GaAs saturable absorber is realized, and the experimental results are consistent with the numerical solutions.     

High-power continuous-wave intracavity frequency-doubled Nd:GdVO/sub 4/-LBO laser under diode pumping into the emitting level

The continuous-wave high power laser emission of Nd:GdVO/sub 4/ at the fundamental wavelength of 1.06 /spl mu/m and its 531-nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal is investigated under pumping by diode laser at 808 nm (on the /sup 4/I/sub 9/2//spl rarr//sup 4/F/sub 5/2/ transition) and 879 nm (on the /sup 4/I/sub 9/2//spl rarr//sup 4/F/sub 3/2/ transition). It is shown that, in spite of a lower absorption at 879 nm, the infrared emission is comparable under these two wavelengths of pump. The green emission performances were, however, improved by the 879 nm pump: 5.1 W at 531 nm with M/sup 2/=1.46 and 0.31 overall optical-to-optical efficiency was obtained from a 3-mm-thick 1-at.% Nd:GdVO/sub 4/ laser medium and a 10-mm-long LBO nonlinear crystal in a Z-type cavity for 16.5 W pump power. In similar conditions, the maximum green power for the 808 nm pump was 4.4 W, with 0.26 overall optical-to-optical efficiency and M/sup 2/=3.40 beam quality; at this pump wavelength the green emission shows evident saturation for pump power in excess of 9.9 W. This behavior is connected with the enhanced heat generation under 809-nm pumping, as evidenced by the increased thermal lensing of the fundamental emission. A careful alignment of the laser enables emission almost free of chaotic intensity fluctuations.     

Simultaneous removal of NO/sub x/, SO/sub x/, and CO/sub 2/ at elevated temperature using a plasma-chemical hybrid process

In previous studies, the authors confirmed that the plasma-chemical combined hybrid process for controlling NO flue gas emission was extremely effective and economical in comparison with the conventional selective catalytic reduction (SCR) system and other technologies. In the present study, we carried out experiments on the simultaneous removal of NO/sub x/ and SO/sub x/ at elevated temperature using the plasma-chemical hybrid process. A series of experiments was performed to quantify all the reaction byproducts such as N/sub 2/O, CO, HNO/sub 2/, HNO/sub 3/, NO/sub 3//sup -/, and SO/sub 4//sup -/ to evaluate the simultaneous NO/sub x/ and SO/sub x/ removal efficiency. The oxidation from NO to NO/sub 2/ without decreasing NO/sub x/ concentration (i.e., minimum reaction byproducts) and with least power consumption is the key for the optimum operation of the plasma reactor. The produced NO/sub 2/ was totally converted to N/sub 2/ and Na/sub 2/SO/sub 4/ with Na/sub 2/SO/sub 3/ or Na/sub 2/S with and without NaOH using the barrier-type packed-bed plasma reactor followed by the packed-column chemical reactor. The NO/sub 2/ reduction was more effective for Na/sub 2/S than Na/sub 2/SO/sub 3/ but produces H/sub 2/S with Na/sub 2/S. For both cases at least five times the stoichiometric amount of chemicals were required for complete NO/sub 2/ reduction. Nearly 100% of NO/sub x/ and SO /sub 2/ and 40% Of CO/sub 2/ simultaneous removal were achieved with less than 5 ppm of N/sub 2/O and CO. The operating cost was less than 1/4 the SCR process. The additional SO/sub 2/ treatment system can be eliminated.     

Correlation between dielectric properties and sintering temperatures of polycrystalline CaCu/sub 3/Ti/sub 4/O/sub 12/

Dielectric properties of polycrystalline CaCu/sub 3/Ti/sub 4/O/sub 12/ (CCTO) pellets sintered in the temperature range 1000-1200/spl deg/C were evaluated with impedance spectroscopy at frequency range of 10/sup 2/ to 10/sup 7/ Hz from 90 K to 294 K. A correlation has been established between the pair values of low frequency limit dielectric constant and the total resistivity and the sintering temperature. For example, the sample sintered at 1100/spl deg/C demonstrates higher value of low frequency limit dielectric constant and lower value of total resistivity, while the sample sintered at 1000/spl deg/C demonstrates lower values of low frequency limit dielectric constant and higher value of total resistivity. This correlation has been successfully explained by relating with the difference in grain size and grain volume resistivities of these two polycrystalline CCTO samples. Further, it is suggested that donor doping of oxygen vacancies Vo' and Vo" may be the reason to cause the difference in the grain volume resistivities of these two samples.     

The Dynamics of the Polarization State in Microchip Nd:YVO4 Laser System

For the properties of crystal and simple system structure, laser diode pumped microchip Nd:YVO4 laser have wide applications. The study of the dynamics of instability of Nd:YVO4 laser system is one of more important issue, recently. In this study, We construct a microchip Nd:YVO4 laser system with polarized optical feedback to observe the influence of polarization state. We select linear, ellipse, and circular as the polarization state of pumping beam and optical feedback beam. When the system is solitary pumped, we demonstrate that the Nd:YVO4 laser system is polarization-dependent fluctuations, and that the pumping efficiency of linearly polarization state is the best. As the system experience the optical feedback, the results shows that the linear polarized feedback is more sensitive in the laser system.     

Power scalable TEM/sub 00/ CW Nd:YAG laser with thermal lens compensation

We present finite-element analysis and experimental results to validate our approach for building high-power single-mode Nd:YAG lasers. We show that the thermooptical and thermomechanical properties of a slab laser can be controlled. This is essential for the use of the proposed unstable resonator, We include demonstration of an efficient subscale laser operating at 20 W TEM/sub 00/.     

Influence of Cr/sub 2/O/sub 3/ and MnO additives on the surface properties of alumina insulators

Alumina insulators containing 95wt% Al/sub 2/O/sub 3/ were doped with Cr/sub 2/O/sub 3/ and MnO(MnCO/sub 3/). The properties of the doped samples were measured and compared with those of the original alumina insulators. Better surface performances of the samples doped with proper Cr/sub 2/O/sub 3/ and MnO were obtained while the bulk properties have hardly been changed. After doping the sample showed a lower SEE (secondary electron emission) coefficient, a lower surface resistivity and a higher surface flashover voltage in vacuum. Meanwhile, some points regarding the effects of manganese and chromium doping on the properties of alumina insulators were also briefly discussed.     

Gel electrolyte system based on polyvinyl chloride with addition of LiClO/sub 4//propylene carbonate: structure, morphology, thermal and conductivity properties

X-ray scattering, calorimetric, and quasi-elastic neutron scattering (QENS) investigations of the polymer gel electrolytes based on 20% PVC, containing 80% of propylene carbonate (PC)-LiClO/sub 4/ solution as a liquid phase were made. It was established that after incorporating PC into the micropores of PVC gels the glass transition of PC increased by 3 K. This is, evidently, a reflection of an effect of confining liquid PC in the pores of PVC microphase-separated morphology. Addition of salt to the PVC-PC system results in raising T/sub g/ of both the pure PC and PVC-PC gel by 10 K. The SAXS data of pure PVC and PVC-PC and PVC-PC-LiClO/sub 4/ indicate that the gels based on PVC consist of microdomains of a different composition. Single-particle and collective dynamics of solvent molecules in free state and in the pores of polymer gels based on PVC were studied by quasi-elastic neutron scattering technique.     

Effect of nitrogen on the band structure and material gain of In/sub y/Ga/sub 1-y/As/sub 1-x/N/sub x/-GaAs quantum wells

The conduction subband structure of InGaAsN-GaAs quantum wells (QWs) is calculated using the band anticrossing model, and its influence on the design of long-wavelength InGaAsN-GaAs QW lasers is analyzed. A good agreement with experimental values is found for the QW zone center transition energies. In particular, a different dependence of the effective bandgap with temperature when compared to the equivalent N-free structure is predicted by the model and experimentally observed. A detailed analysis of the conduction subband structure shows that nitrogen strongly decreases the electron energies and increases the effective masses. A very small N incorporation is also found to increase the nonparabolicity, but this effect saturates for higher nitrogen contents. Both the In content and well width decrease the effective masses and nonparabolicity of the conduction subbands. Material gain as a function of the injection level is calculated for InGaAsN-GaAs QWs for moderate carrier densities. The peak gain at a fixed carrier density is found to be reduced, compared to InGaAs, for a small N content, but this reduction tends to saturate when the N content is further increased. For the gain peak energy, a monotonous strong shift to lower energies is obtained for increasing N content, supporting the feasibility of 1.55-/spl mu/m emission from InGaAsN-GaAs QW laser diodes.     

BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments

Significant deviations in BTI characteristics for metal gate HfO/sub 2/ films compared to silicon oxide based films prove that conventional reliability models based on SiO/sub 2/ films can no longer be directly applied to HfO/sub 2/ based MOSFETS. This study shows the use of conventional accelerated reliability testing in the Fowler-Nordheim tunneling regime to extrapolate time to failure at operating voltages (direct tunneling regime) overestimates device lifetimes. Additionally, unlike conventional gate oxides, the slope of /spl Delta/V/sub t/ versus time (or the rate of charge trapping) in HfO/sub 2/ MOSFETS is dependent on stress voltage. The HfO/sub 2/ based metal gated nMOSFETS show poor PBTI characteristics and do not meet the 10 year lifetime criterion for threshold voltage stability. On the other hand, HfO/sub 2/ based pMOSFETS show superior NBTI behavior and meet the 10 year lifetime criterion. These results are contrary to the observations with conventional gate dielectrics. This paper explores the anomalous charge trapping behavior and provides a comprehensive study of the PBTI characteristics and recovery mechanisms in metal gated HfO/sub 2/ films.     

流动温压成型时间和温度对粘结钕铁硼/铁氧体复合磁体性能的影响

采用快淬NdFeB磁粉和铁氧体磁粉复合,流动温压成型制备出各向同性粘结钕铁硼/铁氧体复合磁体,研究了流动温压工艺对磁体密度和磁性能的影响.结果表明,随着流动温压成型时间的延长和温度的增高,磁体剩磁Br、内禀矫顽力Hcj、最大磁能积(BH)max和密度增大,当达到一定值后开始减小.矫顽力温度系数β随成型时间的延长有下降的...     

LiFePO4充/放电过程界面性能研究

采用粉末X射线衍射法(XRD)和电化学阻抗谱(EIS)来研究LiFePO4充/放电过程的结构变化和界面行为。XRD测试表明,在充/放电过程中LiFePO4/FePO4处于两相共存相互转换的状态。确定了LiFePO4的脱/嵌锂过程中的等效电路,对LiFePO4不同充放电时期试样进行电化学阻抗测试,计算出了交换电流I0和锂离子扩散DLi+。并讨论随充放电过程的进行i0和DLi+的变化规律。     

Gas-flow Simulation with contact moving in GCB considering high-pressure and high-temperature transport properties of SF/sub 6/ gas

This paper addresses a thermal gas-flow simulation in gas circuit-breaker (GCB) chambers, introducing SF/sub 6/ gas constants up to a pressure of 10 MPa and to a temperature of 30 000 K. In the simulation, moving parts, such as nozzle, movable arcing contact, and operating rod, are moved with the opening motion of GCB to see if different results are produced from the conventional simulation method, in which fixed parts in the real GCB are moved. As a result, as far as the pressure profile in the puffer chamber is concerned, it is confirmed that this simulation method can produce better results than the conventional method for the hybrid-puffer-type chamber.     

Dielectric and conductive spectra of the composite of barium titanate and LiClO/sub 4/-doped polyethylene oxide

Dielectric and conductive frequency spectra in a 10 mHz-10 GHz range have been measured for a composite consisting of barium titanate (BaTiO/sub 3/) inclusions dispersed in a LiClO/sub 4/-doped polyethylene oxide (Li-PEO) matrix with volume fraction /spl Phi/ = 0-40%. Pure Li-PEO behaves as a dielectric showing a segmental-mode dielectric relaxation at high frequencies (dielectric regime) and transfers to an ionic conductor below 10 MHz (conductive regime). BaTiO/sub 3/ is a ferroelectric having a very large dielectric permittivity and spontaneous polarization. The introduction of BaTiO/sub 3/ into Li-PEO caused a rapid increase in permittivity in the dielectric regime. In the conductive regime, the composite exhibited an additional relaxation at a frequency related to the ratio of DC conductivity of Li-PEO and the permittivity of BaTiO/sub 3/. This relaxation was attributed to accumulation of dissociated Li/sup +/ and ClO4/sup o/ns at the inclusion/matrix interface which resulted in an increase of effective permittivity and a decrease of effective conductivity. Quantitative analyses based on mixing laws for the two-phase spherical dispersion system have shown that the Bruggeman equation accurately predicted the /spl Phi/-dependence of the effective permittivity over the entire frequency range. Regarding the effective conductivity, it predicted values lower than the observed. We attributed this discrepancy to the spontaneous polarization of BaTiO/sub 3/, which induced ion trapping to reduce the DC conductivity of Li-PEO matrix.     

The influence of the dielectric strength of the N/sub 2//SF/sub 6/-insulation by conducting particle on the spacer surface

This paper investigates the dielectric properties of various N/sub 2//SF/sub 6/ gas mixtures based upon a cylindrical spacer model with adhering particle on the surface tinder homogeneous field conditions. The investigation involves a comparison with pure SF/sub 6/. The flashover field strength for clean and particle contaminated spacer surface under AC and LI stress is determined. The results of the investigations show the sensitivity of N/sub 2//SF/sub 6/ gas mixtures to conducting particles on spacer surfaces for gas pressures up to 800 kPa. Moreover, the correspondence between pure SF/sub 6/ at pressure range from 100 to 400 kPa and N/sub 2//SF/sub 6/ gas mixtures for AC and lightning impulse (LI) flashover field strength range from 50 to 178 kV/cm is determined. Conclusions are drawn about the ability of SF/sub 6/ gas mixtures to serve as technically efficient media for GIS/GITL. The results shed light on the issue of the SF/sub 6/ reduction and particle detectability in GIS/GITL.     

Experimental and numerical studies of dielectric properties of BaTiO/sub 3/-platinum composites at microwave frequencies

The conductor loading method has been used for creating a lossy dielectric material with a desired loss tangent. This method may also be applicable for developing high dielectric constant materials. In this paper, we will present the experimental results of the dielectric properties of BaTiO/sub 3/ and BaTiO/sub 3/ -platinum (BaTiO/sub 3/-Pt) composites. These composite materials were designed to increase the real part of the effective dielectric constant at high frequency. Three different platinum volume fractions were used, 3, 5 and 10%, to make BaTiO/sub 3/-Pt composites, in addition to a pure BaTiO/sub 3/ material. To characterize the BaTiO/sub 3/-Pt composites, microwave frequency measurements were conducted using the waveguide transmission technique. The experimental and numerical results verify that it is possible to increase the dielectric constant using the conductor loading method.     

氰酸酯/环氧复合体系弹性波纹板的制备及性能研究

合成制备了氰酸酯 /环氧复合树脂体系,对该体系的合成工艺及物理性能进行了研究,并考察了温度及催化剂用量对复合树脂反应活性的影响.以 E-玻璃纤维布为增强材料、氰酸酯 /环氧复合树脂为粘结剂制备了发电机定子槽内固定用弹性波纹板,研究了不同体系的树脂及树脂含量对波纹板的变形应力和波峰变化率等性能的影响.结果表明,氰酸酯 /环氧复合树脂体系弹性波纹板完全满足 SIEMENS、 GE公司同类产品技术要求,达国内先进水平.     

Modeling and experimental investigation of a diode-pumped Tm:YAlO/sub 3/ laser with a- and b-cut crystal orientations

The Tm:YAlO/sub 3/ laser performance for two crystal orientations in diode-end-pumped configurations is presented in this paper. An advanced numerical model, which included reabsorption, temperature profile in the medium, and pump and laser beam spatial distribution, was used to predict laser performance. An experimental investigation comparing a- and b-oriented Tm:YAlO/sub 3/ crystals laser performance is presented and discussed in detail. The novel a-cut orientation produced superior performance over the traditionally used b-cut orientation. The modeling results were found to be in a good agreement with the measured data.