多组分掺杂ZnO陶瓷薄膜的射频磁控溅射法制备及表征

采用传统陶瓷烧结工艺,制备了直径为50mm,厚度为3 mm的Bi2O3、Sb2O3、CO2O3、Cr2O3、MnO2掺杂的ZnO陶瓷靶,采用所制备的ZnO陶瓷靶和射频磁控溅射技术在Si(111)衬底上成功制备出了ZnO陶瓷薄膜,并研究了溅射功率和退火温度对ZnO陶瓷薄膜的微观结构和表面形貌的影响.结果表明:随着溅射功率...     

Ag掺杂In2S3薄膜的拉曼光谱研究

利用拉曼光谱结合XRD与SEM测试对未掺杂与Ag掺杂的In2S3薄膜进行了分析研究。XRD测试结果确定了In2S3的物相,并表明掺杂后晶粒尺寸发生一定的变化;拉曼光谱研究表明,掺杂后232、272及300cm-1 3条拉曼谱线发生红移,这是由于掺杂后晶格膨胀引起的。结合部分拉曼谱线半高宽的展宽证实了掺杂后薄膜中存在间隙Ag原子;SEM的测试结果进一步证实Ag掺杂后In2S3晶格存在膨胀,并说明了In2S3薄膜的生长方式。     

Ag掺杂In2S3薄膜的拉曼光谱研究

利用拉曼光谱结合XRD与SEM测试对未掺杂与Ag掺杂的In2S3薄膜进行分析了研究。XRD测试结果确定了In2S3的物相,并表明掺杂后晶粒尺寸发生一定的变化;拉曼光谱研究表明,掺杂后232、272及300cm-13条拉曼谱线发生红移,这是由于掺杂后晶格膨胀引起的。结合部分拉曼谱线半高宽的展宽证实了掺杂后薄膜中存在间隙Ag原子;SEM的测试结果进一步证实Ag掺杂后In2S3晶格存在膨胀,并说明了In2S3薄膜的生长方式     

退火温度对ZnO陶瓷薄膜低压压敏特性的影响

应用新型溶胶-凝胶法制备了ZnO陶瓷薄膜,研究了退火温度对ZnO陶瓷薄膜低压压敏电阻电性能的影响.结果表明,采用溶胶掺杂在550℃退火条件下可形成Zn7Sb2O12及ZnCr2O4相,且在退火温度范围内(550～950℃)基本上没有焦绿石相形成.当退火温度达到750℃以后,Sb2O3已全部转变为稳定性好的尖晶石相,同时存在Bi2O3、ZnO的挥发.采用适当的退火温度,可得到具有优良电性能的ZnO陶瓷薄膜低压压敏电阻,其压敏电压低于5 V,非线性系数可达20,漏电流密度小于0.5μA/mm2.     

多组分掺杂ZnO薄膜的微观结构及电学性能研究

采用射频磁控溅射法在Si(111)衬底上制备多组分掺杂ZnO薄膜,研究了衬底温度和氧分压对Bi、Cr、Sb、Mn和Co掺杂ZnO薄膜的晶体结构、表面形貌及电学性能的影响。结果表明:随着衬底温度的升高,ZnO(002)衍射峰相对强度先增强后减弱;薄膜表面粗糙度先减小后增大。随着氧分压的增大,ZnO的(101)、(102)和(103)衍射峰消失,薄膜呈优异的(002)择优取向生长。在衬底温度为300℃、氧分压为50%时,Bi、Cr、Sb、Mn和Co所引起的缺陷和氧过剩引起的本征缺陷,共同形成受主态的复合缺陷,导致晶界势垒激增。此时,薄膜有最优化的压敏电压、非线性常数和漏电流,分别达到7.05V、20.83和0.58μA/mm~2。     

纳米(ZnO,Al2O3)复合掺杂对3Y2O3-ZrO2材料电性能的影响

以3Y2O3—ZrO2纳米粉和ZnO，A12O3纳米粉为原料，采用交流阻抗谱技术对掺少量ZnO和A12O3的3Y2O3—ZrO2烧结陶瓷进行电性能研究。研究表明：少量纳米ZnO掺杂降低了3Y2O3—ZrO2的电导率，但随着掺人量的增加，电导率开始回升。在ZnO掺杂样品中加入少量纳米A12O3进行复合第二相掺杂，结果提高了3Y2O3—ZrO2材料的电导率。同时少量A12O3的掺人降低了晶粒电导活化能，使得晶粒电导率增加。     

掺氮类金刚石薄膜的制备及其结构表征

采用射频磁控反应溅射法,Ar气为溅射气体,N2气为反应气体,用高纯石墨靶在Si（100）片上制备了掺氮类金刚石薄膜,采用X射线光电子能谱（XPS）、拉曼光谱（Raman）、扫描电子显微镜（SEM）,表征了掺氮类金刚石薄膜的微观结构、表面及截面形貌。Raman光谱结果表明,制备的掺氮类金刚石薄膜中含有特征峰D峰和G峰,分别位于1339．2cm^-1、1554．6cm^-1均向低波数段频移,具有典型的类金刚石结构特征;XPS光谱的C1s和N1s的芯能级证实了薄膜中的碳氮进行了化合,形成了C-N、C=N、C=N,说明薄膜中形成了非晶碳氮结构;同时SEM结果表明实验所制备的薄膜表面均匀、致密、光滑,从截面照片观察,薄膜与衬底结合紧密,薄膜的厚度大约为150nm。     

不同生长温度下Zn1-xSbxO薄膜的结构与发光性能研究

采用固相反应法制备了不同比例的Sb掺杂ZnO靶材,并用脉冲激光沉积(PLD)法在Si(100)基底上制备了Zn_1-xSb_xO薄膜。通过XRD、光致发光(PL)谱对所制薄膜进行了结构表征和性能分析,探讨了不同Sb掺杂量和不同生长温度对薄膜结晶质量和发光性能的影响。结果表明：对比纯ZnO的PL谱发现ZnSbO薄膜出现了紫外峰,且随着Sb浓度的增加,所有发光峰的强度相对增大;针对Zn_0.98Sb_0.02O薄膜,不同的基底生长温度改变了薄膜的紫外和蓝光发射强度,500℃下薄膜具有最好的结晶质量和最强的发光峰;对于500℃下生长的Zn_0.98Sb_0.02O薄膜,当激发光源波长从325nm变化到300nm,峰位红移,而且紫外峰与蓝光锋强度比由1∶3变为12∶1。据此,可以通过改变Sb掺杂量、生长温度和激发光源波长,从而制备出不同波段、不同强度的发光器件。     

Sb对直流反应磁控溅射制备TiO2薄膜的影响

用直流磁控溅射方法在Si(100)面及载玻片上制备了Sb掺杂TiO2薄膜.利用XRD光谱研究了Sb对其薄膜结晶情况的影响,用AFM观察其表面形貌,利用分光光度计测量了TiO2薄膜的光学特性及其对亚甲基蓝的分解活性,通过测量和计算表面对水的接触角来衡量光致亲水性.研究结果表明纯TiO2薄膜为锐钛矿型,适量Sb的掺杂能使TiO2薄膜的结晶有显著改善,并出现Ti2O3和金红石相TiO2,薄膜的光催化活性和光致亲水性明显改善.随着掺杂量的增加,TiO2薄膜的吸收边逐渐红移.但Sb掺杂过量时,破坏了二氧化钛原有的晶格结构,光催化活性和光致亲水性也相应降低.     

MnO2对Ba(Mg1/3Nb2/3)O3微观结构和微波介电性能的影响

研究了MnO2助烧剂对Ba(Mg1/3Nb2/3)O3陶瓷的微观结构和微波介电性能.MnO2可以有效地使Ba(Mg1/3Nb2/3)O3陶瓷的致密化温度由1550℃降低到1400℃左右.随MnO2掺量的增加,Ba(Mg1/3Nb2/3)O3陶瓷的12超晶格衍射峰的强度减弱,但是没有第二相出现.1400℃烧结4h陶瓷的晶粒尺寸在1.5μm左右.MnO2的掺入改善了Ba(Mg1/3Nb2/3)O3陶瓷的微波介电性能,MnO2掺量为1%mol的Ba(Mg1/3Nb2/3)O3陶瓷具有最好的微波介电性能εr≈31.5,Qf=68000,τf=3.11×10-5/℃,这可归功于陶瓷具有相当高的相对密度.     

Intrinsic ferromagnetism in nanocrystalline Mn-doped ZnO depending on Mn concentration

The physical properties of Zn(1-x)Mn(x)O nanoparticles synthesized by thermal decomposition are extensively investigated by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Raman light scattering and Hysteresis measurements. XRD and XPS spectra reveal the absence of secondary phase in nanocrystalline ZnO doped with 5% or less Mn; and, later confirms that the valance state of Mn to be 2+ for all the samples. Raman spectra exhibit a peak at 660 cm(-1) which we attribute to the intrinsic lattice defects of ZnO with increasing Mn concentration. Overall, our results demonstrate that ferromagnetic properties can be realized while Mn-doped ZnO obtained in the nanocrystalline form.     

共沉淀法制备掺杂氧化锌压敏陶瓷粉料热力学分析

本文通过对Ｍｅ^ｎ＋（Ｚｎ^２＋;Ｃｒ_３^＋,Ｍｎ^２＋;Ｓｂ^３＋,Ｂｉ^３＋,Ｃｏ^２＋）－ＮＨ_３－ＣＯ_３^２－－Ｈ_２Ｏ体系进行热力学分析的基础上,获得了Ｍｅ－ＮＨ_３－ＣＯ_３^２－Ｈ_２Ｏ体系中的ｌｇ［Ｍ］_T－ｐＨ关系图,得到了用ＮＨ_４ＨＣＯ_３和ＮＨ_３·Ｈ_２Ｏ作沉淀剂,用共沉淀法制备掺杂氧化锌压敏陶瓷粉料时,最佳共沉淀ｐＨ为７．０左右．     

Regulation of the Growth Orientation of Bi-2212 Thin Film and the Corresponding Influences on Critical Current Density

Journal of Superconductivity and Novel Magnetism - Bi2Sr2Ca1Cu2O8+σ (Bi-2212) superconducting thin films were prepared using the sol–gel method on a LaAlO3 (LAO) single crystal...     

Mn、Sb掺杂NBT—KBT—BT无铅压电陶瓷的研究

采用传统陶瓷制备工艺,利用XRD、SEM等测试分析方法,研究了MnCO3、Sb2O3掺杂对压电陶瓷晶体结构、表面形貌以及性能的影响。研究结果表明：所有组成均呈单一钙钛矿型固溶体特征,无其它晶相生成。掺杂陶瓷在1160℃左右烧结比较合适。MnCO3表现为典型的“受主”添加物特征。Sb2O3的掺杂对陶瓷性能的影响受多种因素共同作用,当Sb2O3的掺杂量为0.1％（质量分数）时,d33=148pC／N、tanδ=4.2％、εr=1516。MnCO3的掺杂可以促进晶粒生长,Sb2O3的掺杂使晶粒尺寸的均匀性降低。     

Effect of boron doping on optical properties of sol-gel based nanostructured zinc oxide films on glass

Boron doped zinc oxide thin films (∼80 nm) were deposited onto pure silica glass by sol-gel dip coating technique from the precursor sol/solution of 4.0 wt.% equivalent oxide content. The boron concentration was varied from 0 to 2 at.% w.r.t. Zn using crystalline boric acid. The nanostructured feature of the films was visualized by FESEM images and the largest cluster size of ZnO was found in 1 at.% boron doped film (B1ZO). The presence of mixed crystal phases with hexagonal as major phase was identified from XRD reflections of the films. Particle size, optical band gap, visible specular reflection, room temperature photoluminescence (PL) emissions (3.24-2.28 eV), infra-red (IR) and Raman active longitudinal optical (LO) phonon vibration were found to be dependent on dopant concentration. For the first time, we report the room temperature fine structured PL emissions as phonon replicas originated from the LO phonon (both IR and Raman active) in 1 at.% boron doped zinc oxide film.     

过渡金属(Mn2+、Ni2+、Fe3+、Cu2+)掺杂ZnO基稀磁半导体的制备及性质

利用溶液腐蚀法制备了Mn2+、Ni2+、Fe3+、Cu2+离子掺杂的ZnO基稀磁半导体。XRD表明掺杂后的ZnO仍然保持单一的纤锌矿结构,没有任何杂质相产生。由紫外-可见光反射谱可知掺杂后吸收边发生了红移。掺杂前ZnO的带隙为3.20eV,对样品分别掺入Mn、Ni、Fe和Cu后的带隙分别为3.19eV、3.15eV、3.08eV和3.17eV。掺杂后样品的室温PL谱除了紫外发射峰外,对于Mn掺杂的样品还在蓝光区域出现了2个分别位于424nm和443nm的发射峰,Fe掺杂的样品出现了一个位于468nm的微弱发射峰,Cu掺杂的样品出现了位于469nm及535nm的很宽的发射峰。室温磁滞回线显示掺杂后样品有明显的铁磁性,掺入Mn、Ni、Fe和Cu样品的剩余磁化强度(Ms)分别为0.3902×10-3emu/cm3、0.454emu/cm3、0.372emu/cm3和0.962×10-3emu/cm3,矫顽力分别为47Oe、115.92Oe、99.33Oe和23Oe。经分析室温铁磁性来源于缺陷调制的Mn2+-Mn2+长程铁磁交换相互作用。     

Mn掺杂对ZnO薄膜结构和光学性质的影响

利用脉冲激光淀积的方法在Si衬底上生长出了c轴高度取向的ZnO和Zn0.9Mn（0.1）O薄膜.光致发光结果显示了Mn的掺杂引起了薄膜的带边发射蓝移,强度减弱,紫光发射几乎消失,但绿光发射增强.利用X射线衍射,X射线吸收精细结构和X射线光电子能谱等实验技术对Mn掺杂的ZnO薄膜的结构及其对光学性质影响进行了研究.结果表明：Mn掺入到ZnO薄膜中形成了Zn0.9Mn0.1O合金薄膜,Mn以＋2价的价态存在,这就导致了掺Mn以后的薄膜带隙变大,在发光谱中表现为带边发射的蓝移.同时由于掺入的Mn与薄膜中的填隙Zn反应,导致薄膜的结晶性变差,薄膜中的填隙Zn减少,O空位增多,引起带边发射和紫光发射减弱,绿光发射增强.     

Zinc oxide epitaxial thin film deposited over carbon on various substrate by pulsed laser deposition technique

Zinc Oxide (ZnO) is a promising candidate material for optical and electronic devices due to its direct wide band gap (3.37 eV) and high exciton binding energy (60 meV). For applications in various fields such as light emitting diode (LED) and laser diodes, growth of p-type ZnO is a prerequisite. ZnO is an intrinsically n-type semiconductor. In this paper we report on the synthesis of Zinc Oxide-Carbon (ZnO:C) thin films using pulsed laser deposition technique (PLD). The deposition parameters were optimized to obtain high quality epitaxial ZnO films over a carbon layer. The structural and optical properties were studied by glazing index X-ray diffraction (GIXRD), photoluminescence (PL), optical absorption (OA), and Raman spectroscopy. Rutherford backscattering spectroscopy (RBS), scanning electron microscopy with energy dispersive spectroscopy (SEMEDS) and atomic force microscopy (AFM) were employed to determine the composition and surface morphology of these thin films. The GIXRD pattern of the synthesized films exhibited hexagonal wurtzite crystal structure with a preferred (002) orientation. PL spectroscopy results showed that the emission intensity was maximum at -380 nm at a deposition temperature of 573 K. In the Raman spectra, the E2 phonon frequency around at 438 cm(-1) is a characteristic peak of the wurtzite lattice and could be seen in all samples. Furthermore, the optical direct band gap of ZnO films was found to be in the visible region. The growth of the epitaxial layer is discussed in the light of carbon atoms from the buffer layer. Our work demonstrates that the carbon is a novel dopant in the group of doped ZnO semiconductor materials. The introduction of carbon impurities enhanced the visible emission of red-green luminescence. It is concluded that the carbon impurities promote the zinc related native defect in ZnO.     

一种新型改性PbTiO3压电陶瓷材料研究

研制了一种新型的添加Pb（Mn1／3Sb2／3）O3、碱土金属CaCO3、Bi2O3、NiO的改性钛酸铅压电陶瓷材料．该材料具有高压电活性、大压电各向异性、低介电常数及小的机械品质因素．实验确定其典型配方为Pb0．80Ca0．20［（Mn1／3Sb2／3）0．05Ti0．95］3＋0．5wt％NiO＋1wt％Bi2O3；在优化后的制备工艺条件下，其主要性能参数为：d33＝70×10-12C·N-1；Kt＝60．0；Hp≈0，Qm＝43，Nt＝2004Hz·m．