Vacancy-donor pairs and their formation in irradiated n-Si

The present experiments using fast electron and gamma-irradiation are aimed at checking the model of defect formation in oxygen-lean n-Si(FZ) in a quantitative way. Electrical measurements are taken over a wide temperature range of 20 to 300 K. Analysis of equations of charge balance making use of the statistics of charge carriers in non-degenerate semiconductors demonstrates that group-V impurity atoms strongly interact with intrinsic point defects. As a result, the concentration of shallow donor states is markedly decreased. This loss of shallow donors, ?δN _D , is accompanied with an increase in the concentration of radiation-produced deep acceptors, +δN _A ^rad , being equal in magnitude but opposite in sign. Such behavior correlates quantitatively with the formation model of donor-vacancy pairs put forward earlier by Watkins and Corbett, what has been proved on the basis of electrical data for the first time. The formation kinetics of these complexes is discussed. Defects of interstitial type in irradiated material appear to be electrically neutral in n-Si. However, their production in the course of electron- and gamma-irradiation is believed to be responsible for drastic changes in the mobility of charge carriers at cryogenic temperatures.     

The GenLOT: generalized linear-phase lapped orthogonal transform

The general factorization of a linear-phase paraunitary filter bank (LPPUFB) is revisited. From this new perspective, a class of lapped orthogonal transforms with extended overlap (generalized linear-phase lapped orthogonal transforms (GenLOTs)) is developed as a subclass of the general class of LPPUFB. In this formulation, the discrete cosine transform (DCT) is the order-1 GenLOT, the lapped orthogonal transform is the order-2 GenLOT, and so on, for any filter length that is an integer multiple of the block size. The GenLOTs are based on the DCT and have fast implementation algorithms. The implementation of GenLOTs is explained, including the method to process finite-length signals. The degrees of freedom in the design of GenLOTs are described, and design examples are presented along with image compression tests     

The theory of the formation of multilayered thin films on solid surfaces

The growth of a dislocation-free thin film deposited on a solid surface from a gaseous phase is treated theoretically. The most commonly encountered process in which the growth follows the two-dimensional mechanism and each succeeding layer is formed on the covered areas of the preceding layer is considered. A self-consistent kinetic model of the film formation is developed. If the energy parameters of the system and the conditions of growth are known, the model makes it possible to calculate the structural characteristics of the system at the different stages of growth. The size distribution function of islands at the stage of their separate growth, the perimeter of the layer boundary, the coverage of the surface at the stage of continuous layer formation, and the average height, as well as other parameters of the surface roughness of the three-dimensional film are determined. The algorithm of numerical calculations and the examples of the calculations for some model systems are presented. The results can be used for the control and optimization of growth in various technological procedures of thin film deposition.     

Encoding of images based on a lapped orthogonal transform

Traditional block transform image coding systems generate artifacts near block boundaries which degrade low bit rate coded images. To reduce these artifacts, a class of unitary transformations, called lapped orthogonal transforms (LOT), is investigated. The basis function on which the signal is projected are overlapped for adjacent blocks. An example of an LOT optimized in terms of energy compaction is numerically derived, using an augmented Lagrangian optimization algorithm. Using this LOT, intraframe coding experiments for 256×240 pixel images were performed at bit rates between 0.1 and 0.35 bits/pixel. The LOT improved the coded image subjective quality over other transforms. The LOT was also used in interframe full-motion video coding experiments for head and shoulder sequences at 28 and 56 kb/s. Significant improvement resulted at low data rates and if no motion compensation were used. However, the improvement was no longer significant at 56 kb/s with full motion compensation     

频变扩展重迭变换的快速算法

频变扩展重迭变换（FV-ELT）是一类具有灵活时频分辨率特性的非均匀滤波器组,适用于音频编码中时频映射处理部分。本文主要给出基于DCT-IV的FV-ELT快速算法,并给出复杂度计算公式。最后以几种典型滤波器组应用结构为例,给出了所需乘加运算次数。与直接计算模式相比,此快速算法能有效地降低FV-ELT的运算复杂度。     

Design of lapped orthogonal transforms

We investigate the design of lapped orthogonal transforms for data compression of images. We present some properties and new results of paraunitary filter banks. We concentrate on the case where the filter length L=2K, where K is the number of channels. The aim is to design perceptually relevant filters, i.e., linear-phase filters that smoothly decay to zero at the boundaries.     

Hyperspectral image compression based on lapped transform and Tucker decomposition

In this paper, we present a hyperspectral image compression system based on the lapped transform and Tucker decomposition (LT-TD). In the proposed method, each band of a hyperspectral image is first decorrelated by a lapped transform. The transformed coefficients of different frequencies are rearranged into three-dimensional (3D) wavelet sub-band structures. The 3D sub-bands are viewed as third-order tensors. Then they are decomposed by Tucker decomposition into a core tensor and three factor matrices. The core tensor preserves most of the energy of the original tensor, and it is encoded using a bit-plane coding algorithm into bit-streams. Comparison experiments have been performed and provided, as well as an analysis regarding the contributing factors for the compression performance, such as the rank of the core tensor and quantization of the factor matrices.     

Fast wavelet transforms based on the extended lapped transform

A new family of wavelet transforms (WTs) based on the extended lapped transform (ELT) is introduced. A new optimisation criterion for the ELT butterfly angles is presented, leading to ELT-based WTs with virtually the same performance but a much lower computational complexity than the standard maximally-regular WTs.<>     

New family of lapped biorthogonal transform via lifting steps

By scaling all discrete cosine transform (DCT) intermediate output coefficients of the lapped transform and employing the type-II and type-IV DCT based on lifting steps, a new family of lapped biorthogonal transform is introduced, called the IntLBT. When all the elements with a floating point of each lifting matrix in the IntLBT are approximated by binary fractions, the IntLBT is implemented by a series of dyadic lifting steps and provides very fast, efficient in-place computation of the transform coefficients, and all internal nodes have finite precision. When each lifting step in the IntLBT is implemented using the same nonlinear operations as those used in the well known integer-to-integer wavelet transform, the IntLBT maps integers to integers, so it can express lossless image information. As an application of the novel IntLBT to lossy image compression, simulation results demonstrate that the IntLBT has significantly less blocking artefacts, higher peak signal-to-noise ratio, and better visual quality than the DCT. More importantly, the IntLBT's coding performance is approximately the same as that of the much more complex Cohen-Daubechies-Feauveau (CDF) 9/7-tap biorthogonal wavelet with floating-point coefficients, and in some cases even surpasses that of the CDF 9/7-tap biorthogonal wavelet.     

The stability of electrical characteristics of Ti/n-Si/Ag,Ti/n-Si/Cu and Ti/n-Si/AgCu diodes prepared under the same conditions with respect to increasing aging time

The purpose of this study is to fabricate Ti/n-Si/Ag, Ti/n-Si/Cu and Ti/n-Si/AgCu Schottky type diodes and to investigate the effects of aging time on the diode parameters such as ideality factor, barrier height, series resistance, interface state density and rectification ratio. High purity titanium (Ti) metal was deposited on the back side of the n-Si semiconductor and then the Ti/n-Si junction was annealed at 420 °C in nitrogen atmosphere. This junction showed ohmic behavior. To fabricate rectifier contacts, Ag, Cu metals and AgCu alloy have been evaporated on the other polished surface of n-Si with Ti ohmic contact. Ag and Cu ratios in the AgCu alloy which are used in the process of preparing the Schottky contact were taken in equal weights. Thus, Ti/n-Si/Ag, Ti/n-Si/Cu and Ti/n-Si/AgCu Schottky type diodes were prepared under the same conditions. The current-voltage (I-V) characterization of Ti/n-Si/Ag, Ti/n-Si/Cu and Ti/n-Si/AgCu diodes were immediately made at room temperature in dark conditions. To investigate the effect of aging time, the I-V measurements of the diodes have been repeated after 1, 7, 15, 30 and 90 days. Characteristic parameters of the diode were calculated from the I-V measurements which are taken with respect to aging time. The results were compared. From these results, it can clearly be seen that the electrical characteristics of diode which is made from AgCu alloy are more stable than other two diodes.     

Design of orthogonal and biorthogonal lapped transforms satisfyingperception related constraints

We propose a new efficient method for the design of orthogonal and biorthogonal lapped transforms for image coding applications. It is shown how perception related constraints such as decay and smoothness of the filters' impulse responses can be incorporated in the optimization procedure. A decomposition of lapped transforms (orthogonal and biorthogonal) with 50% overlap leads to an efficient recursive optimization procedure, which is robust with respect to initial solutions. The importance of this decomposition lies in the fact that it allows to decouple the design of the even-symmetric and the odd-symmetric filters and hence drastically reduces the number of variables to be optimized. It furthermore reveals all the variables predetermined by perception related and coding-efficiency related constraints imposed on the filters. We present design and coding examples demonstrating the perceptual performance and the rate distortion performance of the resulting transforms.     

A family of lapped regular transforms with integer coefficients

Invertible transforms with integer coefficients are highly desirable because of their fast, efficient, VLSI-suitable implementations and their lossless coding capability. In this paper, a large class of lapped regular transforms with integer coefficients (ILT) is presented. Regularity constraints are also taken into account to provide smoother reconstructed signals. In other words, this ILT family can be considered to be an M-band biorthogonal wavelet with integer coefficients. The ILT also possesses a fast and efficient lattice that structurally enforces both linear-phase and exact reconstruction properties. Preliminary image coding experiments show that the ILT yields comparable objective and subjective performance to those of popular state-of-the-art transforms with floating-point coefficients     

Analysis of lapped fiber couplers with an intermediate layer

The effect of a matching or sealing layer inserted in the coupling region of a lapped fiber coupler is analyzed. It is found that the first-order correction factor to the coupling coefficient is proportional to the optical path increment but is independent from bending radius and fiber separation. Specific data with reference to wavelength division multiplexing couplers are presented     

多道搭接对激光熔覆层组织及硬度的影响

进行了EDS能谱分析,并测试了熔覆层的硬度.结果表明:由于搭接的过程中激光的二次加热,促进了共晶体中的Ni的硅化物的重溶,相邻两道的搭接区的组织与其他区域的树枝状枝晶组织明显不同,为微小的颗状晶粒均匀地分布在奥氏体基体上.搭接区的硬度与未受搭接影响的区域基本一致,只是在熔覆层的接近表面部位硬度分布更加均匀.     

Control of island formation on silicon surfaces using ultra-high-vacuum scanning electron microscopy

In situ scanning electron microscopy has been used to control Au island formation on a patterned Si(111) surface with a periodic array of atomic-step bunches and holes. Liquid phase Au-Si islands were observed to redistribute on the patterned surface by annealing. The islands accumulate at a particular position of the step bunch in each pattern unit. This phenomenon is interpreted in terms of the energetic stability of a droplet on a patterned surface.     

Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-xGex/n-Si heterojunction bipolar transistors

Boron out-diffusion in epitaxially grown n-Si/p⁺-Si_1-xGe_x/n-Si heterojunction bipolar transistors is significantly enhanced during 850°C, 10 s rapid thermal annealing following arsenic emitter contact implantation. In this paper, we introduce three techniques which dramatically reduce boron out-diffusion during implant activation. Limiting the post-implant processing to 600°C for 2 min results in minimal diffusion giving acceptable device performance. A second technique involves pulsed laser annealing of the As implant, which removes residual defects and eliminates enhanced diffusion during subsequent thermal processing. Finally, we show that high bulk concentrations of oxygen in the Si_1-xGe_x (∼10²⁰ cm^-3) dramatically reduce the implant-damage-enhanced boron diffusion. In addition to the depth profiles, electrical measurements performed on heterojunction bipolar transistors, incorporating these fabrication techniques, show ideal collector current characteristics and confirm the absence of deleterious boron out-diffusion effects.     

The generalized lapped pseudo-biorthogonal transform: oversampled linear-phase perfect reconstruction filterbanks with lattice structures

We investigate a lattice structure for a special class of N-channel oversampled linear-phase perfect reconstruction filterbanks with a decimation factor M smaller than N. We deal with systems in which all analysis and synthesis filters have the same finite impulse response (FIR) length and share the same center of symmetry. We provide the minimal lattice factorization of a polyphase matrix of a particular class of these oversampled filterbanks (FBs). All filter coefficients are parameterized by rotation angles and positive values. The resulting lattice structure is able to provide fast implementation and allows us to determine the filter coefficients by solving an unconstrained optimization problem. We consider next the case where we are given the generalized lapped pseudo-biorthogonal transform (GLPBT) lattice structure with specific parameters, and we a priori know the correlation matrix of noise that is added in the transform domain. In this case, we provide an alternative lattice structure that suppress the noise. We show that the proposed systems with the lattice structure cover a wide range of linear-phase perfect reconstruction FBs. We also introduce a new cost function for oversampled FB design that can be obtained by generalizing the conventional coding gain. Finally, we exhibit several design examples and their properties.     

Arbitrary resizing of images in DCT domain using lapped transforms

An arbitrary L/M-fold image resizing method using lapped transforms is presented. The resizing operation is carried out in the lapped transform domain, by converting the images in the discrete cosine transform (DCT) domain into those in the lapped transform domain and vice versa. The proposed method provides visually fine images, while reducing the blocking effect to a very low level for images compressed at low bit rates.     

硅基异质结n-SiOxNy/n-Si二极管的I-V特性分析

n-SiOxNy是硅上热生长的超薄绝缘SiOxNy薄膜在电、热应力作用下形成的一种具有双施主型掺杂的宽带隙(Eg=9eV)n-型半导体材料.随着施加电应力时的环境温度的增加,n-SiOxNy的形成效率显著增加.其形成时间的对数lnt随着应力电压、应力环境温度的增加而减小并呈近似的线性关系.n-SiOxNy中的双施主能级是一种施主型的双缺陷能级,当电应力引导的施主缺陷密度达到1.26×1020cm-3时,SiOxNy,绝缘薄膜呈现n型半导体导电特性.在n-Si或p-Si衬底上形成的硅基异质结n-SiOxNy/n-Si或n-SiOxNy/p-Si二极管的I-V特性具有饱和性质,在电压大于1V的电压区,I-V特性可以用1eV势垒的FN隧道机制来描述.当衬底Si的掺杂增加时,势垒高度下降.     

Lossy-to-lossless image compression based on multiplier-less reversible integer time domain lapped transform

In this paper, a reversible integer to integer time domain lapped transform (RTDLT) is introduced. TDLT can be taken as a combination of time domain pre- and post-filter modules with discrete cosine transform (DCT). Different from TDLT, the filters and DCT in our proposed RTDLT are realized from integer to integer by multi-lifting implementations after factorizing the filtering and transforming matrixes into triangular elementary reversible matrices (TERMs). Lifting implementations are realized by only shift and addition without any floating-point multiplier to reduce complexity. The proposed method can realize progressive lossy-to-lossless image compression with a single bit-stream. Simulation results show that RTDLT-based compression system obtains comparable or even higher compression-ratio in lossless compression than that of JPEG2000 and JPEG-LS, as well as gratifying rate distortion performance in lossy compression. Besides, RTDLT keeps low-complexity in hardware realization because it can be parallel implemented on the block level.