磁通门传感器探头测试分析

本文分析了磁通门传感器探头电气参数与物理参数,提出了改进磁探头性能的方法。实际选取了Co基非晶合金薄片作为磁探头磁芯材料,利用理论公式分析设计研制了探头。经实验验证,优化的磁探头噪声较小,灵敏度较高,温度性能较好,磁通门传感器的性能达到了设计要求。     

基于软磁材料提高磁传感器灵敏度的研究

针对微型磁传感器对弱磁场测量灵敏度低的问题,利用软磁材料对外磁场的集聚放大作用来提高磁测系统的灵敏度,重点针对T-形磁通集聚器的轴向磁场放大特性及影响因素进行了分析,并设计了相应的磁通集聚器并进行试验测试。试验表明所设计的Ｔ－形磁通集聚器具有很好的磁场线性放大作用,可用于提高弱磁场的测量精度,磁力线在磁通集聚结构 内部流动的过程中发生了磁通泄漏现象,Ｔ－形磁通集聚器对外部磁场放大了约21倍,磁通集聚器的相对磁导率及空气间隙与外部磁场的放大倍数都呈非线性的关系,结构的长宽之比与外部磁场的放大倍数呈单调递增关系,结构厚度对其几乎没有影响,该研究结果能够为磁通集聚器结构设计及优化方面提供一定的参考价值。     

三分量磁通门传感器非正交性误差校正

静态磁场测量中,由于三分量磁通门传感器的非正交性,使得高分辨率测量要求不能得到满足,必须校正其测量误差。通过分析三分量磁通门传感器非正交性误差,给出其数学模型描述,提出了一种基于实数编码遗传算法的校正方法。应用于三分量磁通门传感器非正交性误差的校正,提高了传感器磁场测量的准确度。实验表明,该算法提高了三分量磁通门传感器非正交误差的校正效果。     

微磁传感器在无源导航及导引技术中的应用前景

介绍了利用地磁场实现无源导航及导引的技术途径及可能性.主要是利用核心器件微磁传感器的特性研制导航及导引所用的磁通门传感器、磁强计和磁罗盘等.介绍了国内外新型巨磁阻抗非晶丝传感器的基本原理及其发展情况并分析比较了几种微磁传感器的性能和特点,分析了达到制导精度所要求的微磁传感器的分辨率和数据采样的速率.描述了地磁匹配制导技术的途径和方法,给出了地磁场的参考模型以及每个点地磁参数的计算方法.介绍了微磁传感器在近炸引信方面的应用.最后描述了微磁传感器在无源导航及导引技术中的应用前景.     

低角雷达跟踪技术研究

随着飞行器技术突飞猛进的发展,其目标特性具有低空发现距离近、信噪比低、速度快、亚音速飞行等特点。雷达由于多路径效应的影响,很难迅速、准确的搜索、捕获、跟踪低空目标。为了有效地解决雷达的低角跟踪问题,本文分析了一些主要的雷达低角跟踪技术。     

一种基于磁传感器的磁场放大特性研究

针对现阶段常用磁传感器对弱磁场测量灵敏度低的问题,利用软磁材料具备对外磁场集聚放大的特性,通过在磁传感器外部的磁通集聚结构以提高磁测系统的灵敏度,利用ANSYS软件重点分析了T形、斜线形以及条状磁通集聚结构的轴向、横 向磁场放大特性并通过实验进行验证,磁力线在磁通集聚结构内部流动的过程中发生了磁通泄漏现象3种结构中T形磁通集 聚结构对外部磁场的放大效果最好,放大倍数达21倍左右,通过对3种结构的线性工作范围进行测试,得到斜线形磁通集聚结构线性工作范围比T形磁通集聚结构线性工作范围大51%,磁传感器外加磁通集聚结构能明显提高对弱磁场的测量精度。     

振弦式传感器测频方法的研究

振弦式传感器是一种使用相当广泛的称重测力传感器。称重测力传感器主要分为应变力传感器,石英谱振器,振弦式传感器等几大类。就其工作原理而言,振弦式传感器是目前在称重测力应用方面最为先进的一种测力传感器。文章主要从理论上对振弦式传感器的激励响应信号进行分析,确定出稳定可靠的激励响应信号区间,并在该区间内分析计数法和多周期测量法的误差,比较得出多周期测量法测量频率精度高,稳定性好,抗干扰能力好。     

振弦式传感器测频方法的研究

振弦式传感器是一种使用相当广泛的称重测力传感器.称重测力传感器主要分为应变力传感器,石英谱振器,振弦式传感器等几大类.就其工作原理而言,振弦式传感器是目前在称重测力应用方面最为先进的一种测力传感器.文章主要从理论上对振弦式传感器的激励响应信号进行分析,确定出稳定可靠的激励响应信号区间,并在该区间内分析计数法和多周期测量法的误差,比较得出多周期测量法测量频率精度高,稳定性好,抗干扰能力好.     

基于结构优化的微型磁通门降噪技术研究

对铁芯结构的改进有利于降低微型磁通门传感器的噪声,本文对铁芯结构进行了拓扑分析与优化,并采用标准MEMS工艺制备了相应的多孔铁芯结构微型磁通门,对所制备的微型磁通门进行了主要噪声指标的综合测试与对比分析。实验结果表明,改进后的多孔铁芯结构能很好地降低微型磁通门传感器的噪声,提高器件的综合性能。     

磁性MEMS传感器制备技术及生物传感应用研究进展

对磁性传感器件的微电子机械系统(MEMS)加工技术以及在生物医学检测方面的应用进行了简单阐述,分析了磁性生物传感技术的工作原理,重点介绍了巨磁阻抗(GMI)、巨磁阻(GMR)和微磁通门传感器的MEMS制备工艺,其中详述了磁性传感器的材料、几何尺寸、结构以及基底对其性能的影响,总结了磁性生物传感器在生物检测中的研究进展,重点阐述了磁性生物传感器在磁性标签、癌症标志物、食源性细菌、病毒以及细胞检测方面的应用。最后,对当前磁性生物传感器在生物医学检测领域面临的问题进行了简要分析,并对磁性生物传感器未来的应用前景进行了展望,以期为研发新一代可用于临床检测磁性生物检测系统打下良好的基础。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.