数字梯度敏感法在静态断裂力学实验中的应用

为了研究断裂力学问题中裂纹尖端区域的局部变形场和断裂特性,采用数字梯度敏感法对带有中心贯穿裂纹的有机玻璃有限宽板条进行了静态实验研究。实验过程中通过CCD记录裂纹尖端区域不同应力状态下的散斑图,对记录的散斑图进行相关运算,得到了不同应力状态下裂纹尖端周围区域内的光线偏转角,并通过偏转角对Ⅰ型裂纹的应力强度因子进行了提取。结果表明, 通过数字梯度敏感方法计算得到的应力强度因子与理论值吻合相对较好。     

数字散斑相关技术及其应用

在一些特殊的全场变形测量场合中引入了数字散斑测量技术,即利用材料表面散斑点的随机分布模式来测量变形。本文利用数字散斑相关技术研究了固体炸药的破坏模式,测量了预制裂纹尖端附近的变形分布,表明裂纹对尖端位移分布有显著影响。在电子封装结构的热变形分析中也引入了数字散斑相关技术,测量了封装结构中焊点附近区域的变形分布,显示出在焊点位置产生了由热变形不协调引起的变形梯度的高度集中。结果表明数字散斑相关技术在材料和结构的全场变形测量方面具有良好的应用前景。     

全息干涉法研究裂纹尖端应力状态的分布

用二次曝光全息干涉法,对有机玻璃材料试件,用小载荷静力加载方式,对单向拉伸单边裂纹有限宽板进行了试验研究,获得了裂纹尖端近区全场应力分布全息图。 单边裂纹有限宽板承受单向拉伸载荷时,近裂纹端的弹性应力场的理论解和光测弹性力学主应力和与等厚干涉条纹级数之间的关系式,当θ=0时,可以推导出关系式n/n_∞=F(2a/r)~(1/2)。因为a、r已知,n、n_∞可由试验测定,从而可以确定F。再由公式K_1=Fσ(πa)~(1/2)即可得到Ⅰ型应力强度因子K_1。     

用焦散线法测量应力强度因子

本文主要研究用焦散线方法求解裂纹尖端应力强度因子，扼要介绍了焦散线法基本原理，并对单边裂纹拉仲板条的应力强度因子进行测量，与理论值相比较，符合得很好。     

密质骨双裂纹反平面模型问题复变方法研究

文章构建密质骨双裂纹反平面模型,通过复变方法求解了该模型问题,并给出了裂纹尖端处应力及应力强度因子的解析表达式。数值算例分析了骨单元与基质的剪切模量比、裂纹尖端处与骨单元中心的距离和裂纹长度对裂纹尖端应力强度因子的影响。     

垂直于双压电材料界面裂纹的反平面问题研究

研究了双压电材料中垂直于界面裂纹的反平面问题。在裂纹面为可通导的边界条件下,通过对控制方程进行傅里叶(Fourier)变换,并利用边界条件将问题转化为奇异积分方程进行求解,得到了裂纹面的位移函数、裂纹尖端的应力强度因子、电位移强度因子和裂纹尖端能量释放率的表达式。数值分析了双压电材料的材料属性对裂纹尖端能量释放率的影响。     

散斑照相法与测量力学常数E、μ值

本文介绍了散斑照相法的一般原理、力学量记录及测量方法,导出了离焦散斑技术在转角测量中的近似关系式,最后提出了用散斑照相法测量材料的杨氏模量E和泊松比μ的特实,并给出了试验结果,它与以往其它方法相比,显得简单、准确、有效。目前,在实验应力分析中,散斑照相法已从最初作为全息法的补充(测量面内位移)发展到测量转角、振动,并推广到三维透明物体的内部位移场的测量。在工程中已用于测量平板弯曲、振动、裂缝尖端的张开位移等。     

激光透射焊接聚甲基丙烯酸甲酯试验研究

采用YAG激光透射焊接聚甲基丙烯酸甲酯(PMMA)板材,对其工艺、焊接区形貌和拉伸性能进行了研究。结果表明:在未添加吸光剂条件下,激光功率高于200W时,透明和黑色PMMA板激光透射焊接性能良好,上层透明PMMA材料的激光入射面无烧蚀损伤,拉伸试验中透明PMMA板断开,焊接区无开裂,最大载荷为2110N。激光功率低于200W时,单道焊接条件下焊接区被拉开,最大载荷1170N。透明PMMA板和其他颜色PMMA板在焊接时,需要添加吸光剂。采用黑色热塑性丙烯酸树脂为吸光剂的条件下,焊接效果较好。     

激光透射塑料焊接剪切强度测试方法分析研究

选取透明有机玻璃(PMMA)板条和半透明聚苯乙烯(PS)板条试样搭接后进行了激光焊接,按照目前常用的两种塑料焊接强度测试方法在万能材料试验机上试验观测,对观测结果的测量和分析证明:第一种塑料焊接强度测试方法(两块板条搭接未做贴附补偿)会因为附加力矩的作用改变焊接面受力状态,第二种塑料焊接强度测试方法(两块板条搭接做贴附补偿)仍然会产生附加力矩,贴附补偿不能保证焊接面受力状态回归到纯剪切状态,最后讨论了附加力矩所带来偏转角Ф大小的主要影响因素。     

数字全息法测量透明物体变形的研究

采用数字全息法测量透明物体的厚度变形场,并给出了物光的相位变化与物体厚度变形间的关系。应用此方法测量了带孔有机玻璃（PMMA）试件在均布拉伸载荷作用下的厚度变形场,并将测量结果与理论计算结果进行比较,验证了此方法的正确性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.