预电离效应对ArF准分子激光特性的影响分析

利用流体模型对ArF准分子激光气体放电过程进行了数值模拟,通过对比不同初始预电离强度下的气体放电情况,分析了预电离效应对准分子激光系统放电特性的影响,并探究了不同气体参数下的预电离效果。结果表明,初始预电离强度对于极间击穿电压、ArF准分子的形成以及光输出特性均有显著影响。在保证均匀电场且有效放电的情况下,低的初始预电离强度难以“点燃”气体,但可以获得较高的激光输出能量,而提高初始预电离强度能有效降低击穿电压,却不利于气体对能量的吸收转化。此外,预电离效果受工作气压与F₂比例的影响,气压的升高或F₂浓度的增加,均会降低预电离的有效性。     

准分子激光器中张氏面型电极的电场仿真研究

为了获得准分子激光器高脉冲能量输出,采用张氏面型电极的理论,设计了一套能产生大面积均匀电场的紧凑型电极。通过ANSYS软件数值仿真获得了电极表面电场分布,并与紧凑型张氏面型电极的理论计算结果进行了对比验证;分析了紫外火花预电离结构对电极放电的影响,并进行了电位和电场分布仿真。结果表明,预电离板的存在直接影响了电极之间的电位和电场分布;电场仿真结果解释了预电离板的顶端与阳极形成放电的原因。该研究为大面积辉光放电电极设计提供了更深入的理论支持。     

高重复频率ArF准分子激光器能量控制算法研究

为了实现工业用高重复频率ArF准分子激光器脉冲能量稳定,从电源控制的角度进行了脉冲能量控制技术的基础研究。介绍了高重复频率ArF准分子激光器能量稳定闭环控制原理,使用近似方法建立了准分子激光器脉冲能量和放电电压的函数模型,提出一种基于实时检测脉冲能量的电压调节比例积分算法,并结合函数模型和控制算法进行了MATLAB仿真。结果表明,建立的脉冲能量模型是合理的,且提出的比例积分算法在提高激光器脉冲输出能量稳定性方面是有效的。     

193nm ArF准分子激光器

本文报告高功率紫外光预电离ArF准分子激光器的实验研究。使用F_2+Ar+He混合气体作为工作介质,已获得ArF最大脉冲激光能量219毫焦耳,总效率0.5％左右。本器件并可输出KrF激光,最大脉冲激光能量424毫焦耳,总效率约1％。激光器是由内径为8.4cm的玻璃钢圆筒做成,长94cm。电极采用张氏均匀场型面电极,电极有效平区宽5mm,电极长80cm,两电极之间距离为2.1cm,因此激活体积为80×2.1×0.5cm~3。放电采用LC反转电路,主放电电容为平板电容,电容量分别为C_1=12nF和C_2=     

紫外光预电离ArF和KrF准分子激光器

本文报导紫外光预电离ArF和KrF准分子激光器的实验研究.输出激光能量ArF105毫焦耳、KrF185毫焦耳.文中讨论了各种参数对激光性能的影响.     

高功率高重频TEA CO2激光器激光放电腔技术

介绍了高功率、高重频TEA CO2激光器激光放电腔的放电电路、结构及特点,针对该系统的性能实施了合理的技术设想及研究方法。在分析高功率TEA激光器技术基础上,讨论了TEA CO2激光器激光放电腔的基本机理。该系统由多只具有储能充、放电功能的陶瓷电容,通过低阻抗匹配传输线、放电电极和紫外光预电离装置向激光器高能放电腔注入电能,获得高重复频率脉冲和高能量脉冲,经光学谐振腔窗口输出高功率激光。描述了储能充放电路、高压快脉冲、低阻抗匹配传输线、放电电极和紫外光预电离等技术的具体应用。     

准分子激光器软X光辐射源

准分子激光器软Ｘ光辐射源Ｈ．Ｓｈｉｅｌｄｓ等人指出［１－４］，为使放电准分子激光器中的体均匀自持放电触发，必须具有起始电子密度ｎｅ≥１０６ｃｍ－３的气体预电离。若ｎｅ增大到１０９ｃｍ－３，放电稳定性得到改善，且输出辐射能增大。为使气体预电离，最广泛采...     

阳极预电离改善准分于激光器放电均匀性

提出了准分子激光器阳极预电离方案，并在实验上证实了阳极预能有效地改善放电均匀性，同时使激光输出能量略有提高。     

印刷电路板预电离TEA CO2激光器的阴极表面预电离研究

弧光放电不利于TEA CO2激光器输出高功率激光,通常采用预电离技术来获得主电极间的均匀辉光放电。印刷电路板预电离较其他紫外光预电离方式具有更好的预电离强度和预电离均匀性的结合,有利于产生高重复频率和高平均功率的脉冲激光。本文研究了印刷电路板预电离TEA CO2激光器中有、无紫外光体积光电离的两种不同预电离结构形式,主放电均匀性实验表明,在无紫外光体积光电离的情况下,也可以获得放电均匀性很好的大体积主放电。这说明在印刷电路板预电离中起主导作用的是阴极表面的预电离效应。本研究结果对探讨TEA CO2激光器的预电离放电机理具有参考价值。     

紫外光预电离TEACO2激光器的研究

我们研制了一台紫外光预电离的TEACO2激光器。主放电电极采用两个实心Rogowski型剖面电极。谐振腔由一凹面镀金镜和一锗平面镜组成。采用金属丝电晕放电紫外光预电离方式。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.