Ka频段GaAs单片平衡混频器

报道Ｋａ频段ＧａＡｓ单片平衡混频器的设计和研究结果。用自行开发的“ＴＵＭＭＩＸＥＲ”软件进行电路设计，工艺以半绝缘ＧａＡｓ为衬底，采用ＮｂＭｏ／ＧａＡｓ接触形成肖特基势垒二极管，以ＳｉＯ２和聚酰亚胺双介质为保护膜，增强了工艺的成功率。研制成功的芯片尺寸为：２ｍｍ×３ｍｍ×０．２ｍｍ，在ｆ＝３１～３６ＧＨＺ范围内ＮＦＳＳＢ≤１０ｄＢ，最佳点ｆ＝３２．２ＧＨｚＮＦ．ＳＳＢ＝８．７ｄＢ［ｆＩＦ＝１．２ＧＨｚ］。     

Ka频段GaAs单片平衡混频器

Ｋａ频段ＧａＡｓ单片平衡混频器江关辉，孙柏根，高葆薪，孙迎新，戴沛然（南京电子器件研究所，２１００１６）（清华大学电子工程系，北京，１０００８４）Ｋａ－ＢａｎｄＭｏｎｏｌｉｔｈｉｃＧａＡｓＢａｌａｎｃｅｄＭｉｘｅｒ￥ＪｉａｎｇＧｕａｎｈｕｉ；ＳｕｎＢ...     

12GHz GaAs单片混频器

分析研究了一种新型１２ＧＨｚＧａＡｓＭＥＳＦＥＴ单片混频器，这种混频器采用级联ＦＥＴ作为混频元件。射频（ＲＦ）和本振（ＬＯ）信号分别通过各自的匹配网络进入混频电路，在中频输出端用中频缓冲放大器代替通常的中频匹配电路。电路在厚０．２ｍｍ，面积１．５ｍｍ×１．２ｍｍ的ＧａＡｓ基片上实现。设计的ＭＭＩＣ混频器在本振１１ＧＨｚ，射频１１．７～１２．２ＧＨＺ频率范围内的最大变频增益１．８ｄＢ。这一结果使进一步研究单片微波接收机成为可能。     

大信号设计GaAs MESFET功率合成

利用ＧａＡｓＭＥＳＦＥＴ功率特性的线性化模型，求出ＧａＡｓＭＥＳＦＥＴ近似最佳功率负载阻抗，为利用谐波平衡法计算提供初值。然后，使用自行研制的谐波平衡分析软件包，进行ＧａＡｓＭＥＳＦＥＴ大信号模型参数的提取和非线性电路模拟计算。将两只总栅宽为９．６ｍｍ的ＧａＡｓＭＥＳＦＥＴ管芯，利用内匹配功率合成技术，在Ｃ波段（５．５～５．８ＧＨＺ）制成１ｄＢ压缩功率大于８Ｗ，典型功率增益９ｄＢ的ＧａＡｓＭＥＳＦＥＴ内匹配功率管。     

用于19～64GHz数字射频的GaAs混频器

据《ＣｏｍｐｏｕｎｄＳｅｍｉｃｏｎｄｕｃｔｏｒ》１９９９年第１期报道，ＴＲＷ公司已研制成７种新的毫米波ＧａＡｓＨＢＴＭＭＩＣ混频器，迅速增加民用通信产品的种类，并已包括ＭＭＩＣ放大器和ＭＭＩＣ全集成模块。研制成新的超小型ＭＭＩＣ混频器，可用于宽带点对点接收机和发射机以及点对多点的无线电系统，通常的工作频率为１９～６４ＧＨｚ。这７种芯片包括双平衡和镜像混频器。ＴＲＷ公司垂直结构的ＨＢＴ肖特基二极管混频器可提供低的变频损耗，高的端口间隔离和最小电路间差异，典型的例子是：·ＭＤＢ１７６和ＭＤＢ１７２Ｃ…     

X和Ku波段GaAs MMIC低噪声放大器的测量及其研究

讨论了微波电性能测量在ＧａＡｓＭＭＩＣ研制和开发中的重要作用，研究了Ｘ和Ｋｕ波段ＧａＡｓＭＭＩＣＬＮＡ微波电性能测量及其测量系统设计所要注意的有关问题。给出了相关增益、噪声系数、输入和输出驻波比的测试结果，并介绍了这两个频段ＧａＡｓＭＭＩＣＬＮＡ的应用情况。     

我国毫米波射电望远镜灵敏度提高6倍

由中科院紫金山天文台青年研究员史生才研制的“９０－１１５ＧＨｚ超导ＳＩＳ接收机”，于９８年１０月安装在青海德令哈观测站的 １３．７ Ｍ毫米波射电望远镜上，替换了原来的肖特基二极管混频器的接收机用于天文观测．一年多的应用表明，接收机的性能稳定，能满足长时间天文观测的要求． 目前在 １１０ ＧＨｚ望远镜系统噪声温度（单边带）约为 ２００～３００ Ｋ，性能与国际上射电望远镜同频段系统相当．接收机的噪声温度为ＴＲ（ＤＳＢ）＜４０Ｋ，连同中频范围、中频带宽、连续工作时间等方面的测试，与采用肖特基二极管混频器的接…     

Ku波段PHEMT单片低噪声放大器的设计与实验

通过分析微波单片集成电路（ＭＭＩＣ）与常用的微波立体电路的不同点，讨论了采用通用的微波电路软件进行ＭＭＩＣ精确设计的有效途径，着重分析了在软件中如何建立三类ＭＭＩＣ用元件（有源器件、无源元件及由ＭＭＩＣ工艺决定的特有图形元件）电路模型的方法，借助这一分析，使用通用的微波电路软件，完成了Ｋｕ波段两级ＡｌＧａＡｓ／ＩｎＧａＡｓＰＨＥＭＴ单片低噪声放大器的设计与研制，取得了与ＣＡＤ设计值十分相近的实验结     

3mm宽带混频器

计算分析了不同参数的管芯二极管阻抗及腔体嵌入网络阻抗，并给出了匹配范围的计算图解，选择最佳参数，设计了可在３ｍｍ全波段工作的混频器，在８０－１１５ＧＨｚ带内，混频器最小噪声温度ＴＭ（ＤＳＢ）＝１５０Ｋ。     

Ku波段无耗型MESFET混频器单片电路研究

本文对无耗型ＭＥＳＦＥＴ漏极注入混频器电路工作原理进行了分析，在对这种混频器进行了ＣＡＤ研究中，提出了ＭＥＳＦＥＴ模型扩展技术，在此基础上，进行Ｋｕ波段无耗型ＭＥＳＦＥＴ混频器单片集成电路的设计与研制，混频器电路的测试结果与计算相符，性能达到，变频地益－２ｄＢ，噪声系数－７－８ｄＢ。     

Modelling of an f.e.t. mixer

A theoretical analysis of the mixer operation of an f.e.t. is presented. The model is based on a nonlinear equivalent circuit deduced from small signal S-parameter measurements. A Volterra series analysis enables the conversion gain to be calculated for different circuit conditions.     

毫米波三端器件漏极混频器的研究

对Ka频段三端器件漏极混频器电路进行了分析和优化设计。由三端器件小信号S参数和直流特性测试值拟合出该器件非线性等效电路模型和参数;采用谐波平衡和变换矩阵分析法推导出漏极混频器变频增益,由此优化设计混频器电路。实验测试结果射频为27.4GHz、本振为33.4GHz/10dBm,获得变频增益为4dB。     

Diode Mixer Coefficients for Spurious Response Prediction

The precise prediction of spurious response levels in a superheterodyne receiver would greatly aid the receiver designer besides being necessary for the representation of a radio frequency interference environment. The power series is used to represent the nonlinear receiver mixer in order to obtain an expression for the receiver spurious response sensitivity. This sensitivity expression contains the power series coefficients and shows that the coefficient magnitudes must be known before the spurious response levels can be computed. Therefore, a method is developed to provide a solution for the power series coefficients of a typical mixer circuit configuration. In the analysis to determine the coefficients, the input voltage-output current loop equation is written for a crystal mixer equivalent circuit. This expression is expanded in a power series and then the reversion of a series technique is implemented to obtain the desired output-input expression in series form. The effects of the nonlinear element (diode) and the total circuit resistance are included in the results. Coefficient expressions are determined up to the ninth order in the manner described above and the level of each expression is computed versus the product ?( IR + I?) RT where ? and IR are diode parameters, RT is the equivalent circuit resistance, and I?, is the dc bias current. Also, the effect of diode bias upon spurious response sensitivity is considered and the results are plotted. The results show the mixer dc operating conditions which must exist in order to reduce spurious response sensitivity.     

Optimum design of nonlinear microwave circuits

This paper reports a direct optimization method of nonlinear circuits. The procedure consists in determining in the power space, a surface including all the extremum allowed powers at terminal ports of each nonlinear component of the circuit. According to the required nonlinear function, an appropriate choice of the tangent planes to this surface allows to calculate the optimum loads for the nonlinear components. This method optimizes the parameters of nonlinear devices without any constraint on the circuit. A small signal analysis is then taken in order to deduce the optimum performance of the nonlinear designed circuit. The realization of a single balanced diode mixer has shown good agreement between the calculated values and the experimental results     

Nonlinear integral modeling of dual-gate GaAs MESFET's

A nonlinear integral approach is adopted for the modeling of Dual-Gate GaAs MESFET's (DGFET's) in the framework of Harmonic-Balance circuit analysis. In particular, the model enables the computation of the large-signal performance of DGFET's directly on the basis of DC characteristics and small-signal bias-dependent admittance parameters without requiring complex procedures for parameter extraction. The validity of the approach is confirmed by accurate physics-based numerical simulations of a DGFET mixer     

Accurate analysis and design of millimeter wave mixers

The present study is based on the method introduced by B. Shuppert (1986) for nonlinear analysis of mixers, but it differs in the linear part. In particular, the circuit characterization of the mixer harmonics is emphasized, removing the usual approximation of matched terminations and employing models that effectively represent network characteristics in the microwave and millimeter wave domain. This goal is achieved through the accurate knowledge of the various components used in the mixer and the use of accurate equivalent circuits. In order to validate the model, two subharmonic mixers operating at K-band (18-26 GHz) were realized. Reasonable agreement between theoretical and experimental results is achieved     

Stability analysis of nonlinear microwave circuits in time domain

Frequency-domain based methods are not valid to analyze a nonlinear microwave circuit with general, arbitrary nonlinearities. Therefore, analysis of nonlinear microwave circuits in time-domain is presented. Subharmonics and instabilities can be predicted. As examples, Josephson junction and the Schottkybarrier mixer diode are discussed.     

Intermodulation distortion in current-commutating CMOS mixers

The nonlinearity behavior of CMOS current-switching mixers is investigated. By treating the mixer as a periodically-time-varying weakly nonlinear circuit, we study the distortion-causing mechanisms and we predict the mixer distortion performance. Normalized graphs are provided from which the designer can readily estimate the mixer nonlinearity for particular process and design parameters. A simple CMOS transistor model appropriate for our calculations, which also takes into account deviation from the square law is adopted. The significance of a physical transistor model for reliable distortion simulation is demonstrated. The prediction of our analysis is compared with simulation results and with experimental data     

Design of Ka-band antipodal finline mixer and detector

This paper mainly discusses the analysis and design of a finline single-ended mixer and detector. In the circuit, for the purpose of eliminating high-order resonant modes and improving transition loss, metallic via holes are implemented along the mounting edge of the substrate embedded in the split-block of the WG-finline-microstrip transition. Meanwhile, a Ka band slow-wave and bandstop filter, which represents a reactive termination, is designed for the utilization of idle frequencies and operation frequencies energy. Full-wave analysis is carried out to optimize the input matching network of the mixer and the detector circuit using lumped elements to model the nonlinear diode. The exported S-matrix of the optimized circuit is used for conversion loss and voltage sensitivity analysis.The lowest measured conversion loss is 3.52 dB at 32.2 GHz; the conversion loss is flat and less than 5.68 dB in the frequency band of 29-34 GHz. The highest measured zero-bias voltage sensitivity is 1450 mV/mW at 38.6 GHz,and the sensitivity is better than 1000 mV/mW in the frequency band of 38-40 GHz.     

微波混频器频域全非线性分析法

本文首先建立了微波混频器件的频域计算模型,以及相应的频域谱平衡迭代算法,然后对多频信号激励下的微波混频器进行了分析,以此研究了混频器的频率变换特性。