台达变频器在矿用绳锯机系统的应用

本文介绍了一种矿用绳锯机控制系统,该系统使用可编程控制器、人机界面和变频器等工控元件设计构成,相比目前市场中的通用型矿用绳锯机,具有操作简单、切割效果更好等优点。     

基于安川变频器的定尺飞锯机的系统集成设计

针对焊管生产线定尺飞锯机的工艺要求,设计了基于安川变频器的定尺飞锯机,它可在管材高速运动状态下实现高精度自动跟踪锯切,起到确保主轧机连续不断工作的作用。系统由DSP2407,触摸屏,安川变频器等组成。提出了飞锯控制系统的组成框图．提出了安川变频器的具体接线图。给出了安川变频器的参数设定方法,经过中原焊管公司等很多现场的应用,验证了基于安川变频器的定尺飞锯机的可靠性和稳定性。     

变频器模拟控制方式在矿用绞车系统上的应用

本文介绍了一种基于韩国SOHO变频器的模拟量控制方式在矿用无极绳绞车系统上的应用。设计了一种电压-电流变换电路,利用变频器的模拟量给定功能,将用户给出的电压模拟量转换成电流控制量调节变频器的输出频率或转速,实现精确控制负载三相异步电机的目的。     

西门子全集成驱动系统 初探国内中型矿用卡车驱动系统市场

正在露天煤矿开采现场,已经很少能看见人工劳动,取而代之的是矿用卡车、电铲和拉斗铲三大"巨人"忙碌的身影。其中,矿用卡车是矿山开采过程中非常重要的运输工具,其性能的优劣直接影响到矿山的开采效率和运营成本。而驱动系统作为矿用卡车的灵魂,是保障"巨人"高效运作的基础,在矿用卡车性能方面起着举足轻重的作用。矿用卡车根据驱动方式不同可分为机械式矿用卡车和电动轮矿用卡车两种,由于电动轮矿用卡车具有结构简单、驱动力和电制动力强劲、配件损耗少、节省燃油等特点,     

对矿用软起动器谐波问题的探讨

针对矿用软起动器产生的谐波被忽略的问题,文章从矿用软起动器谐波产生、谐波影响、谐波治理等方面进行了分析及总结,希望大家也能更加重视对矿用软起动器谐波的谐波问题。     

基于WIFI技术的矿用机车无线通信与定位系统研究

针对矿山现有机车通信普遍采用的漏泄通信系统可靠性低、功能单一等缺点。本文提出了一种基于WIFI技术的矿用机车无线通信与定位系统的设计方案，该系统实现对矿用机车的通信联络、定位跟踪、调度管理功能。具有信号覆盖范围广、传输带宽高及可扩展性好等优点。很好的解决矿用机车行驶过程中噪音大环境中语音通信质量差的问题，通过对矿用机车的跟踪定位及实时通信调度，有效地避免了矿用机车行驶过程中的可能产生堵塞甚至碰撞的事故。提高了矿用机车的安全生产的效率，具有良好的应用前景。     

基于CAN总线技术矿用电机监测系统设计

为保证矿用电机的安全运行,满足智能化矿井的发展要求,本文在分析煤矿安全生产形势和CAN现场总线通讯技术基础上,设计了矿用电机监测系统。监测系统通过CAN通讯技术将高精度传感器采集矿用电机电压、电流和扭矩等信息反馈给上位机,上位机对电机参数进行分析处理,实现矿用电机的实时监测。     

TD-SCDMA矿用无线通信系统在“感知矿山”中的物联网应用

大唐电信矿用通讯行业解决方案引入物联网的概念、技术和设备,首次将TD-SCDMA技术运用于煤矿井下,与大唐电信自主研发的KT151矿用通讯系统有机结合,提升了矿用通讯系统的内容,提高了企业管理的效率和全面性。矿用无线通讯系统作为矿山信息通信系统的重要组成部分,在现代化大中型矿山企业中正扮演着越来越重要的角色。矿用无线通讯系统具有通信(话音通信、数字分组通信)、调度(电话调度、会议汇接)、控制及信息采集等功能,应用于矿山的生产调度、指挥和单位内部通信。     

便携式通信矿灯的研究与设计

完好的矿灯对改善劳动条件、提高劳动生产率和安全生产都具有重大意义。矿灯若不完好,比如电池漏液、红灯、电线破损、闭锁不起作用、灯圈松动等不仅影响正常使用,而且有可能造成瓦斯、煤尘爆炸等严重事故。基于对采矿安全的要求和矿用无线网络的认识,通过对矿用智能终端的应用需求及关键技术进行研究,在ARM11硬件平台上搭建Linux系统,并结合响应的驱动及应用程序,将TD-LTE技术与矿灯相融合,设计和实现了矿用通信矿灯。测试结果表明,终端能实现控制矿灯,在矿用无线网络下实现通信功能,矿灯的检测信息和矿工的位置信息能实时地传输到管理中心,实现对安全采矿的要求。     

变频调速系统在矿井提升中的实现

针对矿用提升机实际应用中所出现的低效,高能耗等诸多问题,提出了使用变频调速技术代替传统控制的必要性。文中首先分析了矿用提升机的基本理论,在此基础上设计了—种全数字式PLC控制的矿用变频调速系统,通过计算比较得出,该变频调速系统较传统转子串电阻调速控制方式具有控制简单易行,实现低能耗,有效提高年产置等特点。     

半导体晶体线锯切割工艺研究

线锯切割技术在半导体晶体切割领域已经得到了广泛应用。对传统内圆切割技术进行了介绍,并针对新兴线锯切割技术的现有分类和研究水平做了总结,阐述了自由磨料线锯切割和固结磨料线锯切割两大类别的工作原理和研究进展。自由磨料线锯切割是取代内圆切割的一种广泛技术,而固结磨料线锯切割则是针对高切割效率要求的重要改进。针对晶体线锯切割技术所做的综述,有助于研究者了解前沿研究进展,把握晶体线锯切割的发展方向。     

新型多线切割机张力控制系统研究

分析了多线切割机的工作原理、组成结构及其工作过程。介绍了多线切割机的总体控制方案,并对多线切割机的张力控制系统进行深入地理论研究,建立了控制系统的运动学和动力学模型。在此基础上,提出了一种PID速度同步跟随控制方案。试验结果表明,该方案可靠、稳定、控制精度高、调整方便。     

Prediction of sawing force for single-crystal silicon carbide with fixed abrasive diamond wire saw

Fixed abrasive diamond wire saw has been used to cut hard-and-brittle materials into wafers, such as silicon carbide. The force of a single abrasive determines the cutting depth, and affects material removal mode and crack propagation length. Therefore, the sawing force is a key factor that affects the surface/subsurface quality of wafers. In this paper, a numerical sawing force predicting method considering wire saw parameters was proposed with the combination of both ductile removal and brittle fracture removal for each single abrasive. A new calculation method of single abrasive cutting force considering frictional force component and new material removal way considering the effect of lateral crack were adopted. Then the influences of process parameters and wire parameters on sawing force were analyzed. Finally, mathematical sawing force formulas described by both process parameters and wire saw parameters were obtained using the new sawing force prediction method. The validity of this prediction method and sawing force formulas was verified through experiments in the literature under the same process parameters and wire saw parameters.     

多线切割机导轮系统设计

导轮系统是多线切割机的关键部件之一,承担着金属线的传输工作,它的旋转灵活性、端跳及径跳对整个设备的可靠性至关重要。从设计角度研究了整个导轮系统的结构,并对其关键件导轮轴进行设计,对整个导轮系统的寿命进行计算分析,最终达到该设备要求。     

Characterization of polycrystalline silicon wafers for solar cells sliced with novel fixed‐abrasive wire

For slicing crystalline silicon ingots, we have developed a novel fixed‐abrasive wire where diamond grit is fixed onto a bare wire by resin bonding. The properties of the wafers sliced using a multi‐wire saw with the fixed‐abrasive wire have been investigated. When compared with the wafers sliced with the loose‐abrasive wire, the slicing speed is improved by approximately 2.5‐fold and the thicknesses of saw‐damage layers are reduced by more than a factor of two. Polycrystalline silicon solar cells have been fabricated for the first time utilizing the wafers sliced with the fixed‐abrasive wire, and the cells with the saw‐damage etching depth of 7 µm have shown photovoltaic properties comparable to those prepared using the wafers sliced with the loose‐abrasive wire and subsequently etched to remove the damage layers up to 15 µm. It has been clarified that wafer slicing using the fixed‐abrasive wire is promising as a next‐generation slicing technique for fabrication of solar cells, particularly thin silicon cells where the wafer thicknesses approach or become less than 150 µm. Copyright © 2010 John Wiley & Sons, Ltd.     

Subsurface crack damage in silicon wafers induced by resin bonded diamond wire sawing

In order to optimize the process of wire sawing, this work studied the subsurface crack damage in silicon wafers induced by resin bonded diamond wire sawing using theoretical and experimental methods. A novel mathematical relationship between subsurface crack damage depth and processing parameters was established according to the indentation fracture mechanics. Sawing experiment using resin bonded diamond wire saw was performed on a wire saw machine. The validity of the proposed model was conducted by comparing with the experimental results. At last, the influences of processing parameters on subsurface damage depth were discussed. Results indicate that the median cracks are mainly oblique cracks which generate the subsurface crack damage. On the diamond wire saw cross section, the abrasives with the position angle 78° between abrasive position and vertical direction generate the largest subsurface damage depth. Furthermore, abrasives, generating the subsurface damage, tend away from the bottom of diamond wire with the increase of wire speed or decreases with the increase of feed rate. However, the wire speed and feed rate have opposite effects on the subsurface crack damage depth. In addition, the subsurface crack damage depth is unchanged when the ratio of feed rate and wire speed does not change.     

Experiment study on electroplated diamond wire saw slicing single-crystal silicon

This paper conducted the slicing experiments of single-crystal silicon using a reciprocating electroplated diamond wire saw. The machined wafer topography and wire wear were observed by using scanning electron microscope (SEM). The influences of process parameters and cutting fluids on single-crystal silicon wafer surface roughness (SR), subsurface micro-crack damage (SSD) depth, total thickness variation (TTV) and warp were investigated. The bonded interface sectioning technique was used to examine the cut wafers SSD depth. Study results show that a higher wire speed and lower ingot feed speed can produce lower wafer SR and SSD; the lower warp of wafer needs lower wire speed and ingot feed speed; and low wafer TTV can be obtained by an appropriate matching relationship between wire speed and ingot feed speed. The synthetic cutting fluid has a better total effect to improve the wafer quality. The pulled-out of diamond abrasives is the main wear form of wire, which indicates that more research on improving the abrasives retaining strength on wire surface should be investigated in fixed-abrasive wire manufacturing process, in order to improve the wire life and wire saw machining process.     

多线切割工艺中晶片翘曲度的控制

翘曲度是鉴别晶片几何参数好坏的重要指标之一.采用逐点扫描法对多线切割制备的晶片翘曲度分布进行了测量.通过对切割线张力、砂浆使用次数、切割速度等影响翘曲度的主要因素进行实验分析,阐述了产生的原因,并得出了翘曲度的分布规律.针对影响翘曲度的主要因素,根据其分布规律调整相应的切割工艺条件,可较好地控制晶片的翘曲度.虽是针对Si单晶加工中出现的实验情况进行分析,但该结论完全可用于Ge、GaAs等其他晶体的加工中.     

V360变频器在金刚石绳锯机上的应用

本文介绍了四方V360系列变频器在金刚石绳锯机上的成功应用。