Winner-Take-All Class AB Input Stage

A novel technique to implement class AB differential amplifier input stages is proposed. It is based on the use of Winner-Take-All circuits for achieving dynamic current boosting, and is well suited for low-voltage operation. Experimental measurements of an OTA using this technique, fabricated in a 0.5-μm CMOS technology, show a slew rate of 92 V/μs for an 80-pF load and 120 μW of static power consumption.     

New CMOS Class AB Transmitter for 10 Gb/s Serial Links

This paper presents a new fully differential CMOS class AB transmitter for 10 Gb/s serial links. The transmitter consists of a fully differential multiplexer, a rail-to-rail configured pre-amplification stage, and a push-pull output stage. The multiplexer achieves a high multiplexing speed by using modified pseudo-NMOS logic where pull-up networks are replaced with self-biased active inductors. The rail-to-rail configured pre-amplification stage with active inductors amplifies the signals from the multiplexer. The fully differential output current is generated by a class AB output stage operated in a push-pull mode. High data rates of the transmitter are obtained by ensuring that the transistors in both the pre-amplification and output stages are always in saturation and the voltage swing of all critical nodes is small. The fully differential configuration of the transmitter effectively suppresses common-mode disturbances, particularly those coupled from the power and ground rails, the electro-magnetic interference exerted from channels to neighboring devices is also minimized. The transmitter minimizes switching noise by drawing a constant current from the supply voltage. The transmitter has been implemented in TSMC 0.18 μm 1.8 V 6-metal CMOS technology and analyzed using Spectre from Cadence Design Systems with BSIM3.3 device models. Simulation results demonstrate that the transmitter provides a 5 mA peak-to-peak differential output current with 100 ps eye-width and >5 mA eye-height at 10 Gb/s. The transmitter consumes 18 mW with a total transistor area of 100 μm² approximately. Jean Jiang received the B.Eng. degree in Electrical Engineering from Wuhan University of Technology, Wuhan, China in 1995, and the M.A.Sc. degree in Electrical and Computer Engineering from Ryerson University, Toronto, Ontario, Canada in 2004. From 1999 to 2001, she worked for Ericsson Global IT Services where she was a technical staff to maintain computer networks. From 2002 to 2004, she was a research assistant and a M.A.Sc. student with the Microsystem Research Laboratory in the Department of Electrical and Computer Engineering at Ryerson University. She is now with Intel Corp., CA. as an IC design engineer. Her research interests are in analog CMOS circuit design for high-speed data communications. Jean Jiang was awarded the Ontario Graduate Scholarship in 2003–2005 for academic excellence. Fei Yuan received the B.Eng. degree in electrical engineering from Shandong University, Jinan, China in 1985, the M.A.Sc. degree in chemical engineering and Ph.D. degree in electrical engineering from University of Waterloo, Waterloo, Ontario, Canada in 1995 and 1999, respectively. During 1985–1989, he was a Lecturer in the Department of Electrical Engineering, Changzhou Institute of Technology, Jiangsu, China. In 1989 he was a Visiting Professor at Humber College of Applied Arts and Technology, Toronto, Ontario, Canada, and Lambton College of Applied Arts and Technology, Sarnia, Ontario, Canada. He was with Paton Controls Limited, Sarnia, Ontario, Canada as a Controls Engineer during 1989–1994. Since 1999 he has been with the Department of Electrical and Computer Engineering, Ryerson University, Toronto, Ontario, Canada, where he is currently an Associate Professor and the Associate Chair for Undergraduate Studies and Faculty Affairs. He is the co-author of the book Computer Methods for Analysis of Mixed-Mode Switching Circuits (Springer-Verlag, 2004, with Ajoy Opal). Dr. Yuan received the Ryerson Research Chair award from Ryerson University in Jan. 2005, the Research Excellence Award from the Faculty of Engineering and Applied Science of Ryerson University in 2004, the post-graduate scholarship from Natural Science and Engineering Research Council of Canada during 1997–1998, and the Teaching Excellence Award from Changzhou Institute of Technology in 1988. Dr. Yuan is a senior member of IEEE and a registered professional engineer in the province of Ontario, Canada.     

一种微功耗轨到轨输出AB类运算放大器设计

在分析研究AB类运算放大器的输入和输出级构成原理基础上,提出一种与信号处理模块的输出端匹配并具有一定负载能力的缓冲器的设计。缓冲器采用了AB类运放结构,其输入级采用折叠式共射共基结构,输出级分别采用PNP管和NMOS管作为上拉管和下拉管,结合电路结构的改进使之具有轨到轨(rail-to-rail)的输出特性和很低的静态电流。设计的电路具有开环增益大、静态功耗小、带宽较高等特点。此运放已在1.5μmBCD工艺下实现。测试结果表明,静态电流仅为8.5μA,闭环带宽达200kHz,开环增益为100dB。     

A Novel Class AB CMOS Power Amplifier

A novel class AB design is described. To achieve a large output voltage swing and to avoid the offset problems associated with a class AB input stage, the non-linearity is placed between the input and the output stage. Before the output stage the signal is separated in one positive and one negative half, which are then amplified separately.For the first time this topology is used in an integrated CMOS power amplifier. It operates with +/ –2.5 V supplies and can drive more than 4 V_pp into an 8 load.     

Class AB Output Stages of the Integrated Amplifiers

General approach to the design of the class AB output stages of bipolar and CMOS amplifiers based on common-mode negative feedback is discussed. Frequency compensation of the result multiloop system is provided by feed forward links. Effectiveness of the proposed method is shown on designs of rail-to-rail bipolar and CMOS output stages, all-NPN output stage, output stage of the hearing aids IC. Common design mistakes are shown using industry-standard ICs.     

一种恒跨导轨对轨CMOS运算放大器的设计

设计了一种新颖的恒跨导轨对轨CMOS运算放大器结构。输入级采用轨对轨的结构,在输入级采用4个虚拟差分对管来对输入差分对的电流进行限制,使运放的输入级跨导在工作范围内保持恒定。输出级采用前馈式AB类输出结构,以使输出达到全摆幅。仿真结果显示,在5 V电源电压和带有10 pF电容与10 kΩ电阻并联的负载下,该运放在共模输入范围内实现了恒跨导,在整个共模输入范围内跨导变化率仅为3%,输出摆幅也达到了轨对轨全摆幅,运放的开环增益为108.5 dB,增益带宽积为26.7 MHz,相位裕度为76.3°。     

A Study of Different Class AB Log Domain First Order Filters

Several different class AB log-domain/translinear filters are compared in terms of their noise and distortion behavior using both analytical and simulation results. A few of the circuit topologies shown have not been considered before and are derived using a new theory for class AB dynamical circuits recently proposed. The study, although approximate, suggests ways in which both noise and distortion performance may be optimized by appropriate choice of circuit topology. Other practical aspects of the designs are also discussed.     

CMOS宽带可编程增益低噪声放大器

给出了一种可应用于中国移动多媒体广播(CMMB)调谐器的宽带(470~860 MHz)可编程增益低噪声放大器。该电路在UMC 0.18μm RF CMOS工艺下实现,芯片面积为0.37 mm2(不包括ESD pad)。芯片测试结果表明,在1.8 V的电源电压下功耗为30.2 mW,该电路可实现-6.8~32.4 dB的增益动态变化范围,0.5 dB步长,最高增益下单端信号噪声系数小于3.8 dB。     

A new CMOS class AB serial link transmitter with a low supply voltage sensitivity

This paper presents a new class AB transmitter with a low supply voltage/ground bouncing sensitivity for 10 Gb/s serial links. The low sensitivity of the output current to supply voltage fluctuation and ground bouncing is achieved by operating the system in a rail-to-rail swing mode. High data rates are obtained by multiplexing at low-impedance nodes and inductive shunt peaking with active inductors. The fully differential configuration and bipolar signaling of the transmitter minimize the effect of both common-mode disturbances and electro-magnetic interferences exerted from channels to neighboring devices. The class AB operation of the transmitter minimizes its static power consumption. The proposed transmitter is implemented in a 1.2 V 0.13μm CMOS technology and analyzed using Spectre from Cadence Design Systems with BSIM3v3 device models. Both pre and post-layout simulation results demonstrate that the transmitter conveys a sufficiently large differential output current that is insensitive to supply voltage fluctuation and ground bouncing at 10 Gb/s. Fei Yuan received the B.Eng. degree in electrical engineering from Shandong University, Jinan, China in 1985, the M.A.Sc. degree in chemical engineering, and Ph.D. degree in electrical engineering from University of Waterloo, Waterloo, Ontario, Canada in 1995 and 1999, respectively. During 1985–1989, he was a Lecturer in the Department of Electrical Engineering, Changzhou Institute of Technology, Jiangsu, China. In 1989 he was a Visiting Professor at Humber College of Applied Arts and Technology, Toronto, Ontario, Canada, and Lambton College of Applied Arts and Technology, Sarnia, Ontario, Canada. He was with Paton Controls Limited, Sarnia, Ontario, Canada as a Controls Engineer during 1989–1994. Since 1999 he has been with the Department of Electrical and Computer Engineering, Ryerson University, Toronto, Ontario, Canada, where he is currently an Associate Professor and the Associate Chair for Undergraduate Studies and Faculty Affairs. He is the co-author of the book Computer Methods for Analysis of Mixed-Mode Switching Circuits (Springer-Verlag, 2004, with Ajoy Opal). Dr. Yuan received the Ryerson Research Chair award from Ryerson University in Jan. 2005, the Research Excellence Award from the Faculty of Engineering and Applied Science of Ryerson University in 2004, the post-graduate scholarship from Natural Science and Engineering Research Council of Canada during 1997–1998, and the Teaching Excellence Award from Changzhou Institute of Technology in 1988. Dr. Yuan is a senior member of IEEE and a registered professional engineer in the province of Ontario, Canada. Minghai Li received the B.Eng. (96) and M.A.Sc (06) degrees from North University of China and Ryerson University, Toronto, Ontario, Canada, respectively, both in Electrical and Computer Engineering. During 1996–2001, he was with Motorola Semiconductor (China) as a MCU product engineer. He was involved with MCU new product design, simulation, and test program development. He was a research assistant and a M.A.Sc student with the Microsystems Research Laboratory in the Department of Electrical and Computer Engineering at Ryerson University. He is now with Micron Technology Inc., Boise, Idaho, USA as a design engineer. His research interest is in the design of CMOS mixed-signal circuits for high-speed data transmission, including multiplexer, driver, pre-emphasis, and VCOs.     

低功耗CMOS限幅放大器设计

利用0.18μm CMOS工艺设计了应用于光接收机中的10Gb/s限幅放大器.此限幅放大器由输入缓冲,4级放大单元,一级用于驱动50Ω传输线的输出缓冲和失调电压补偿回路构成.输入动态范围为38dB(10mV～800mV),负载上的输出限幅在400mV,在3.3V电源电压下,功耗仅为99mW.整个芯片面积为0.8×1.3mm2.     

单片化低压低功耗Si CMOS运算放大器的实现

基于新型的折叠共栅共源PMOS差分输入级拓扑、轨至轨AB类低压CMOS推挽输出级模型、低压低功耗LV/LP技术特别考虑和EDA平台的实验设计与模拟仿真,并设计配置了先进的Si 2 mm P阱硅栅CMOS集成工艺技术。已经得到一种具有VT = 0.7 V、电源电压1.1~1.5 V、静态功耗典型值330 mW、75 dB开环增益和945 kHz单位增益带宽的LV/LP运算放大器。该运放可应用于ULSI库单元和诸多相关技术领域,其实践有助于Si CMOS低压低功耗集成电路技术的进一步开发与交流。     

基于FC-AB结构的运放标准化设计流程研究北大核心

折叠式共源共栅和Class AB(FC-AB)结构的运算放大器被广泛研究和使用，但是其结构应用的多变性使设计者难以快速准确地设计出符合要求的电路。文章提出了一种标准化的运算放大器设计流程，设计者可以根据应用需求快速灵活地设计目标电路。以电流分配作为设计流程的起始点和调整点，以核心参数作为判据或约束项，进行迭代优化，最终通过相关电流和跨导确定器件尺寸。以流程图形式提出了低噪声运放的设计流程，关键器件尺寸的理论值和设计值平均误差为11.48%。根据该流程设计了一种低噪声运放，并采用0.18μm CMOS工艺进行了加工。运放关键电学参数都满足设计要求，其等效输入噪声为10.8 nV/√Hz,与目标值偏差1.8%。     

Very Low Voltage CMOS Current Multiplier with Floating DC Level Shifters

A compact, wide dynamic range, four-quadrant analog CMOS current multiplier is presented. The use of floating DC level shifters (floating batteries) made by resistors and current sources allows low supply voltages while maintaining at the same time a large input range and low harmonic distortion. Measurement results for an experimental prototype in a 0.8 m CMOS technology demonstrate on silicon the proposed technique.     

A 2.4-GHz CMOS Monolithic VCO with an MOS Varactor

A 2.4-GHz CMOS VCO is presented employing pMOS transistors as voltage-controlled capacitances and on-chip hollow spiral inductors. The design was implemented in a standard digital 0.8m CMOS process and exhibits a 15% tuning range at 2.5 V supply voltage and 9 mA supply current. Phase-noise measurements show a phase-noise of about –118 dBc/Hz at 1 MHz from the carrier.     

一种具有精确增益控制的CMOS可编程增益放大器

采用0.13μm RF CMOS工艺,设计了一款具有精确增益步长控制的宽带可编程增益放大器.在传统电阻网络衰减器的基础上,提出了一种新的增益控制方法.该方法采用两个互相重叠的反馈环路,通过改变环路中跨导的比值以实现精细的增益步长控制.测试结果表明,当电源电压为1.2V时,功耗为24 mW,-3 dB带宽为600MHz....     

低压CMOS满幅度恒定增益运算放大器设计

运用负反馈控制输入共模电平,实现了电源电压仅为0.9 V的满幅度运算放大器。采用TSMC 0.35μm CMOS工艺参数HSPICE模拟结果显示,在满幅度共模电平下,运放的平均直流电压增益为66.4 dB(10 pF电容负载),增益波动仅为0.01%,平均单位增益带宽为1.88 MHz,平均相位裕度52°,平均静态功耗仅为135μW。     

一种静态电流精确可控的AB类运算放大器

针对传统A类两级运算放大器摆率受限的情况,提出了一种新型的AB类两级CMOS运算放大器。仅通过增加一个电阻和电容,就实现了传统A类运算放大器向AB类运算放大器的转变,以及对输出级静态电流的精确控制,极大地改善了摆率,并且不会增加额外的功耗。新的频率补偿方法在保证系统稳定的同时大大增加了单位增益带宽,同时避免了传统补偿所带来的缺点。仿真结果表明,与传统的A类运算放大器相比,提出的AB类运算放大器的正负摆率分别提高到原来的35倍和2.2倍,单位增益带宽提高到原来的5倍。     

An RF Power Amplifier in a Digital CMOS Process

A two stage class B power amplifier for 1.9 GHz is presented. The amplifier is fabricated in a standard digital EPI-CMOS process with low resistivity substrate. The measured output power is 29 dBm in a 50 load. A design method to find the large signal parameters of the output transistor is presented. It separates the determination of the optimal load resistance and the determination of the large signal drain-source capacitance. Based on this method, proper values for on-chip interstage matching and off-chip output matching can be derived. A envelope linearisation circuit for the PA is proposed. Simulations and measurements of a fabricated linearisation circuit are presented and used to calculate the achievable linearity in terms of the spectral leakage and the error vector magnitude of a EDGE (3/8-8PSK) modulated signal.     

具有温控保护的低谐波失真AB类音频功放

设计了一款应用于电视机、PC音响等系统的AB类四通道音频功率放大器.实现最低谐波失真为0.148%.同时提出了一种新型BE结负温反馈温度监控保护电路.在电路中设置温度传感器,当芯片温度高于150℃或局部温度高于180℃时,关断功率输出级2.8ms.使用先进3μm高压双极型工艺进行版图设计并成功流片.对芯片实测显示,此功放可提供1～50W的功率输出,输出效率达到35%,总谐波失真小于1%.     

Design of Two‐Stage Class AB CMOS Buffers: A Systematic Approach

A systematic approach for the design of two‐stage class AB CMOS unity‐gain buffers is proposed. It is based on the inclusion of a class AB operation to class A Miller amplifier topologies in unity‐gain negative feedback by a simple technique that does not modify quiescent currents, supply requirements, noise performance, or static power. Three design examples are fabricated in a 0.5 µm CMOS process. Measurement results show slew rate improvement factors of approximately 100 for the class AB buffers versus their class A counterparts for the same quiescent power consumption (< 200 µW).