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介绍了一种S波段集中式全固态雷达发射机,发射机设计采用前级组件及发射监控热备份技术,能在发热达到一定温度时,或其他故障发生时进行前级组件自动切换。发射机同时应用了开关电源和强迫风冷结构,性能优良,大幅提高了发射机使用可靠性。经实际测试,发射机输出功率>15 kW,瞬时带宽40 MHz,发射脉宽100 μS,工作比8%,已连续工作5 000 h无故障。 相似文献
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采用气压浸渗法制备了热导率为850 W ? m-1 ? K-1的铜-硼/金刚石复合材料翅片热沉,测试了其在自然冷却、强迫风冷和强迫水冷三种冷却模式下的散热效果.结果表明,热源功率越高,铜-硼/金刚石复合材料的散热效果越显著.在强迫水冷模式下,当加热片的输入功率为80 W时,使用铜-硼/金刚石复合材料翅片热沉时加热片的最高温度比使用铜翅片热沉时低14℃,比使用铝翅片热沉时低23℃.Icepak热模拟发现,在强迫水冷模式下输入功率为80 W时,与铜和铝翅片热沉相比,铜-硼/金刚石复合材料翅片热沉的整体温度更低且温度分布更均匀.研究结果证实,铜-硼/金刚石复合材料是一种高效的散热材料,在大功率电子器件散热中具有广阔的应用前景. 相似文献
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设计一款可在室内机房环境条件下工作,总热耗约为2 700 W,结构紧凑、散热方式简单、散热效果良好,可安装在19寸机柜内的功放单元。依据该功放单元工作原理、内部器件布局、热耗,综合考虑散热与结构要求,设计一种采用组合插片散热器强迫风冷的方案。通过功放模块和电源分组固定安装在分层的3个插片散热器上,同时与设备侧壁形成完整的风道的方式,实现了功放单元的强迫风冷散热;并对该设备进行了热传导与散热理论计算,同时运用仿真软件建立模型,进行数值分析。数值仿真结果显示,该功放单元正常工作热交换达到平衡状态时,功放模块外壳最高温度为64.2℃,满足设计要求。通过实物样机验证了该功放单元基于组合插片散热器结构设计方案的可行性,以及计算、仿真方法的合理性、正确性。 相似文献
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某机载通讯设备的热仿真分析 总被引:2,自引:0,他引:2
以强迫风冷下某机载通讯设备作为研究对象,应用CFD热分析软件对其紊流流场和温度场进行了仿真分析.为了使该设备工作在允许的温度范围内,对其进行了优化设计. 相似文献
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鉴于目前IGBT模块功率越来越大,传统风冷散热模块难以满足其散热要求,以磁悬浮列车牵引变流器中的单个IGBT模块为研究对象,设计了一款新型热管嵌入式IGBT水冷散热模组。通过ANSYS?Icepak软件对该冷却系统和设计的水冷模组的压力损失进行仿真分析,研究了增加圆柱形翅片和扁平翅片与不同入口流量对模块性能的影响。结果表明:与传统水冷模组相比,新型热管嵌入式IGBT水冷散热系统使IGBT模块芯片最高温度从81.51℃降低到75.34℃,降低了约7.4%;最大温差从12.81℃降低到9.92℃,进一步提高了IGBT模块的芯片温度均匀性,验证了新型水冷系统具有良好的散热性能,满足IGBT模块的要求,为后续先进的水冷系统设计奠定了基础。 相似文献
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本文为了验证大功率功率放大器在强迫风冷散热方式下的散热效果,设计了一款基于推挽式结构的大功率放大器,通过理论分析计算散热方案,使用ICEPAK散热软件仿真验证理论计算结果。考虑到功放耗散功率较大,最终采用强迫风冷和热沉的散热方式对功放进行散热。本文设计基于LDMOS功率管型号为MRF13750H,仿真设计在单频点915 MHz,输入功率35dBm时,输出功率达615W,效率为74%,耗散功率约达290 W,理论计算所需风机的风量大小为2.54 m3/min。ICEPAK软件进行仿真在耗散功率在300 W时,功率管温度为71.25℃,风机工作点为3.86 m3/min,工作静压力为201 Pa。仿真验证满足设计要求。 相似文献
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Peter Z. F. Shi Albert C. W. Lu Y. M. Tan Stephen C. K. Wong Eric Tan Ronson Tan 《Microelectronics Reliability》2004,44(5):112-769
This paper describes a thermal design methodology for a 2.5 Gbps optical transmitter that mainly comprises a laser array of 12 VCSELs and a laser driver module. An integrated heat sink design was performed and optimized through modeling and simulation. Temperature regulation of the laser array has been performed through design and optimization of the thermal path (cavity and heat spreader) and separations (wire bonding lengths). Detailed module simulation was performed after the heat sink design and the temperature regulations. To validate the simulation results, a test vehicle of 2.5 Gbps transmitter was built up and tested under various thermal conditions. The airflow rate and ambient temperature were controlled by a wind tunnel. It has shown that the experimental and detailed module simulation results are comparable. A cooling solution with natural convection has been achieved so that the case temperature can be kept under 70 °C without using a fan. The modeling and simulation were done by using a computational fluid dynamics (CFD) program. 相似文献
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S波段液冷固态功放组件的设计 总被引:1,自引:0,他引:1
功放组件是固态雷达发射机的重要组成部分,其热设计已成为发射机可靠性水平的重要标志之一。介绍了一种输出功率在工作频带内达1kW的液冷功放组件,对其电讯设计、电磁兼容及热设计都做了详细的阐述。试验表明,该组件热性能满足要求,保证组件实现高输出功率,工作稳定可靠。 相似文献
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论述了某固态发射机的热设计。针对集中热源和高功率密度功放组件的散热问题进行了专题研究,完成了板级、系统级的热设计分析计算,并进行了原型试验研究,实现了强迫空调通风冷却系统的等量送风,取得良好效果。 相似文献
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Deepak Nayak Lih-Tyng Hwang Iwona Turlik Arnold Reisman 《Journal of Electronic Materials》1987,16(5):357-364
A thermal module was designed to transfer heat efficiently from high power dissipation chips to a liquid coolant via forced
convection. Turbulent and laminar flow regimes were investigated. Channel geometries for deep channels (1000 μm deep, and
used for turbulent flow), and shallow channels (100 μm deep, and used for laminar flow) were optimized for high heat transfer
coefficient, ease of fabrication, and better structural rigidity of the module. A 4″ x 4″ module, made out of Cu, was tested
using a 4″ Si “thermal” wafer as a heat generating source as well as a temperature sensor. Wafer scale integration and high
energy ion implantation were employed to obtain nine l x l cm heat sources, and temperature sensing diodes embedded within
the thermal wafer. For the deep channel design, the maximum device temperature rise on the module was 18° C for a power dissipation
of 42 W/chip, and a flow rate of 126 cc/sec. For the shallow channel design, the temperature rise was 19° C for a flow rate
of 19 cc/sec, and a power dissipation level of 42 W/chip. With all nine chips on the thermal module powered to 42 W/chip,
the maximum chip to chip temperature variations were found to be 2 and 8° C for deep and shallow channel designs, respectively. 相似文献
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