Effect of annealing temperature on magnetic property of Si1 − xCrx thin films

Polycrystalline Si_1 − xCr_x thin films have been prepared by magnetron sputtering followed by rapid thermal annealing (RTA) for crystallization. RTA was performed at 800 °C for 5 min, 1200 °C for 30 s and 1200 °C for 2 min, in a N₂ flow. The magnetic hysteresis loops were observed at room temperature in all the samples except for RTA at 800 °C for 5 min, and the annealing caused the decrease of saturation magnetization relative to the as-grown film. X-ray diffraction spectra and Raman spectra showed that the annealing process lead the deposited amorphous film to be crystallized and CrSi₂ phase formed. The magnetism of the films was determined by the competition between crystallinity and precipitation of diamagnetic CrSi₂ phase.     

Characterization and ozone-induced coloration of ZnxNi1 − xO thin films prepared by sol-gel method

Zn_xNi_1 − xO thin films were prepared by sol-gel spin coating method onto glass substrates in combination with annealing process. Effect of zinc content on the structural, optical and ozone-induced coloration properties of as-prepared films was investigated by X-ray diffraction, field emission-scanning electron microscope, atomic force microscopy and UV-VIS spectrophotometer, respectively. X-ray diffraction results reveal that the structures of all films are still cubic NiO structure. Average grain size of Zn_xNi_1 − xO film increases with increasing annealing temperature and its crystallization is strongly affected by Zn content. Coloration of the films was obtained after UV/ozone exposure due to a presence of ozone-induced hydroxyl groups. Significant enhancement of coloration efficiency of the films is achieved as content of Zn increases.     

Low temperature (~ 250 °C) layer exchange crystallization of Si1 − xGex (x = 1-0) on insulator for advanced flexible devices

Low-temperature (~ 250 °C) layer exchange crystallization of poly-Si_1 − xGe_x (x = 1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (~ 250 °C, 20 h) of the a-Si_1 − xGe_x (x = 1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices.     

Compositional dependence on the optical properties of amorphous As2 − xS3 − xSbx thin films

In this paper, we report results of the optical properties of thermally deposited As_2 − xS_3 − xSb_x thin films with x = 0.02, 0.07, 0.1 and 0.15. We have characterized the deposited films by Fourier Transform Infrared, Raman and X-ray photoelectron spectroscopy (XPS). The relationship between the structural and optical properties and the compositional variation were investigated. It was found that the optical bandgap decreases with increase in Sb content. The XPS core level spectra show a decrease in As₂S₃ percentage with increase in Sb content. This is confirmed from the shifting of the Raman peak from AsS₃ vibrational mode towards SbS₃ vibrational mode.     

Stress and microstructure evolution in Al-induced crystallization of amorphous Ge thin films

Stress evolution during Al-induced crystallization of amorphous Ge thin films was in-situ explored by multi-beam optical stress sensor (MOSS). The critical temperature at which crystallization occurs was determined by in-situ X-ray diffraction (XRD) measurement. In combination with microstructure characterization, we try to understand the mechanisms of stress generation as well as stress relaxation during metal induced crystallization (MIC).     

Raman and XRD studies of Ge nanocrystals in alumina films grown by RF-magnetron sputtering

Germanium (Ge) nanocrystals (NCs) embedded in alumina thin films were produced by deposition on fused silica and silicon (111) substrates using radio-frequency (RF) magnetron sputtering. The films were characterised by both Raman and X-ray diffraction (XRD) spectroscopy. The deposition conditions were optimised in order to obtain crystalline Ge nanoparticles. In as-deposited films, the typical NC size was ∼3 nm as estimated by means of X-ray diffraction. Raman spectra taken from as-deposited films revealed both amorphous and crystalline semiconductor phases. Annealing was performed in order to improve the crystallinity of the semiconductor phase in the films. After a 1 h annealing at 800 °C the mean NC size estimated from the XRD data and Raman spectra increased to ∼6.5 nm. An increase in the crystallinity of the Ge phase was also confirmed by the Raman spectroscopy data.     

Structural study of Si1 − xGex nanocrystals embedded in SiO2 films

We have investigated the structural properties of Si_1 − xGe_x nanocrystals formed in an amorphous SiO₂ matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si_1 − xGe_x nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.     

Growth and characterization of nc-Ge prepared by microwave annealing

Ge nanocrystals embedded in Silicon oxide matrix have been synthesized on Si substrate by co-sputtering of SiO₂ and Ge using RF magnetron sputtering technique. The as deposited films were subjected to microwave annealing at 800 and 900 °C. The structural characterization was performed by using X-ray diffraction (XRD) and Raman spectrometry. XRD measurements confirmed the formation of Ge nanocrystals. Raman scattering spectra showed a peak of Ge-Ge vibrational mode around 299 cm⁻¹, which was caused by quantum confinement of phonons in the Ge nanocrystals. Variation of the nanocrystal size with annealing temperature has been discussed. Advantages of microwave annealing are explained in detail.     

Structural and optical properties of rock-salt Cd1 − xZnxO thin films prepared by thermal decomposition of electrodeposited Cd1 − xZnxO2

Cd_1 − xZn_xO nanocrystalline thin films with rock-salt structure were obtained through thermal decomposition of Cd_1 − xZn_xO₂ (x = 0, 0.37, 0.57, 1) thin films which were electrodeposited from aqueous solution at room temperature. X-ray diffraction results showed that the Zn ions were incorporated into rock salt-structure of CdO and the crystal lattice parameters decreased with the increase of Zn contents. The bandgaps of the Cd_1 − xZn_xO thin films were obtained from optical transmission and were 2.40, 2.51, 2.63 and 3.25 eV, respectively.     

Synthesis, structural and magnetic studies of the CuCr1−xRhxO2 delafossite solid solution with 0 ≤ x ≤ 0.2

The CuCr_1−xRh_xO₂ series is investigated by X-ray diffraction, magnetization measurements and Raman spectroscopy on ceramic samples. It is found that a delafossite solid solution is maintained up to x = 0.2 in CuCr_1−xRh_xO₂. The small observed variation in cell parameters is consistent with the small difference between the ionic radii of Cr³⁺ and Rh³⁺. A significant broadening of X-ray reflections is observed and when analyzed using the Williamson-Hall relationship showed that the strain generated by Rh substitution is strongly anisotropic, affecting mainly (Cr,Rh)-O bonds in the ab plane. Room temperature Raman spectra displayed three main Raman active modes. All modes shift to lower frequency and undergo significant changes in intensity with increasing Rh content, showing the effect of Rh atoms on the M³⁺-O bond strength. The magnetic behavior of CuCr_1−xRh_xO₂ samples was investigated as a function of temperature and applied field. At high temperature paramagnetic behavior, and at low temperature, evidence for weak ferromagnetism, reinforced by a hysteresis loop at 4 K is observed. The magnetic behavior of CuCr_1−xRh_xO₂ is attributed to the disorder of Cr and Rh in octahedral sites resulting in short-range Cr-O-Cr and Cr-O-Rh interactions, which give rise to short-range weak ferromagnetism.     

Annealing effects on microstructure and mechanical properties of sputtered multilayer Cr(1 − x)AlxN films

Multilayer Cr_(1 − x)Al_xN films with a total thickness of 2 μm were deposited on high-speed steel by medium frequency magnetron sputtering from Cr and Al-Cr (70 at.% Al) targets. The samples were annealed in air at 400 °C, 600 °C, 800 °C and 1000 °C for 1 hour. Films were characterized by cross-sectional scanning electron microscopy and X-ray diffraction analysis. The grain size of the as-deposited multilayer films is about 10 nm, increasing with the annealing temperature up to 100 nm. Interfacial reactions have clearly changed at elevated annealing temperatures. As-deposited films' hardness measured by nanoindentation is 22.6 GPa, which increases to 26.7 GPa when the annealing temperature goes up to 400 and 600 °C, but hardness decreases to 21.2 GPa with further annealing temperature increase from 600 to 1000 °C. The multilayer film adhesion was measured by means of the scratch test combined with acoustic emission for detecting the fracture load. The critical normal load decreased from 49.7 N for the as-deposited films to 21.2 N for the films annealed at 1000 °C.     

Study of thermally-induced effects on Si–Ge amorphous layers using optical measurements

Thin films of elemental Si and Ge were grown one after another onto glass substrate using electron beam evaporation method. Optical measurements were used to probe the thermally-induced effects on Si–Ge layers upon annealing at 100 °C. Thermal treatment of the films was carried out under vacuum, to avoid oxidation of the films, at a temperature of 100 °C. X-ray diffraction, XRD, showed that the as-deposited layers are amorphous. The change of some optical parameters such as transmission and optical energy gap, as a result of the heat treatment, was explored. The optical energy gap as well as the optical transmission of the dual layer sample was found to increase with annealing time. The obtained results show the possibility of tailoring the layer structure to meet certain technological applications in terms of optical transmission and optical energy gap. Scanning Electron Microscope, SEM, was used to study the morphology of the as-deposited and annealed films. As-deposited films showed no crystalline features. However, the annealed films show some partial crystallization that increases with annealing time. The observed structural changes result in an increase of the optical energy gap with annealing.     

Study on the Crystallization of Amorphous Cr-Si-Ni Thin Films Using in situ X-ray Diffraction

Crystallization behavior of amorphous Cr-Si-Ni thin films was investigated by means of high temperature in situ X-ray diffraction measurements. The diffraction spectra were recorded isothermally at temperature between 250 and 750 degreesC. The in situ testing of crystallization enables the direct observation of structure evolution which is dependent on heat treatment. Based on the testing results, the grain sizes of the crystalline phases were compared and phase transition tendency was understood. In the mean time, electrical properties of the films as functions of annealing temperature and time have been studied. The increase of volume fraction of CrSi2 crystalline phases in the Cr-Si-Ni films leads to the decrease in conductivity of the films. The annealing behavior of temperature coefficient of resistance (TCR) is a result of competition between a negative contribution caused by the weak localization effects in amorphous region and a positive contribution caused by CrSi2 grains. Thus the proper mixture of amorphous and crystalline constituents could result in a final zero TCR.     

Structural and optical properties of polycrystalline CdSexTe1−x (0 ≤ x ≤ 0.4) thin films

CdSe_xTe_1−x (0 ≤ x ≤ 0.4) ternary thin films have been deposited on quartz substrates at room temperature by a single source thermal evaporation. X-ray diffraction patterns and transmission electron microscope micrographs of these films showed that the films were of polycrystalline texture over the whole range studied and exhibit predominant cubic (zinc blende) structure with strong preferential orientation of the crystallites along (1 1 1) direction. Linear variation of the lattice constant with mole fraction x is observed obeying Vegard's law. The dependence of the optical constants, the refractive index n and extinction coefficient k, of the films on the mole fraction x was studied in the spectral range of 400-2500 nm. The normal dispersion of the refractive index of the films could be described using the Wemple-DiDomenco single-oscillator model. CdSe_xTe_1−x thin films of different composition have two direct and indirect transitions corresponding to energy gaps and . The variation in either or with x indicates that this system belongs to the amalgamation type. The variation follows a subquadratic dependence and the bowing parameters were found to be 0.36 and 0.48 eV for the direct, and indirect energy gaps, respectively. Direct linear variation of the ratio N/m^* with x is observed.     

Preparation of CuIn1 − xGaxSe2 films by metalorganic chemical vapor deposition using three precursors

CuInGaSe₂ thin films have been prepared by a low pressure metalorganic chemical vapor deposition technique using three precursors without additional Se. The properties of the resultant films have been examined by scanning electron microscopy, X-ray diffraction, micro-Raman scattering and absorption spectroscopy.     

Rapid crystallization of a-Si:H films with various silicon-to-hydrogen bonding configurations using rapid energy transfer annealing

Hydrogenated amorphous silicon (a-Si:H) films were prepared by changing substrate temperature of plasma-enhanced chemical vapor deposition to induce different contents of monohydride and polyhydride bonds, which were then crystallized into polysilicon (poly-Si) films by rapid energy transfer annealing. Fourier transform infrared and transmission spectra show that the formation of numerous polyhydride bonds increases the hydrogen content and reduces the refractive index of a-Si:H films. The rise in the concentration of polyhydride bonds in as-deposited a-Si:H films can result in the increase of ultraviolet reflectance, small peak shift, and change in full width at half maximum of Raman scattering and X-ray diffraction peaks of the obtained poly-Si films after annealing. These results demonstrate that high-concentration polyhydride bonds can promote the rapid crystallization of a-Si:H and obtain high-crystallinity poly-Si films. Transmission electron microscopy identifies that the poly-Si films have the typical dendrite-like grain structure.     

Growth and characterization of La1 − xAxMnO3 (A = Ag and K, x = 0.33) epitaxial and polycrystalline manganite thin films derived by sol-gel dip-coating technique

Manganite La_0.67Ag_0.33MnO₃ (LAgMO) and La_0.67K_0.33MnO₃ (LKMO) films have been obtained on a single-crystal of LaAlO₃ (100) and quartz substrates using sol-gel dip-coating technique. Structural, electrical, magnetic and magnetoresistance properties of the films have been investigated. X-ray diffraction patterns of the films grown on LaAlO₃ (100) substrate showed to be highly oriented in the direction of (100) and the films grown on the quartz substrate have perovskite with rhombohedral structure. The oriented films exhibited typical transport properties, whereas the polycrystalline films showed significantly different behaviors of the temperature dependent resistivity, magnetization and magnetoresistance (MR). The epitaxial films of the LAgMO and LKMO showed different metal-insulator transition temperature (T_MI) and the paramagnetic-ferromagnetic phase transition temperature (T_C). This was mainly due to the different ionic radius size of Ag¹⁺ and K¹⁺. The variation of T_MI and T_C was due to the different annealing temperatures and grain size effect in the polycrystalline films. The polycrystalline films showed a higher MR than the corresponding epitaxial films. An extrinsic MR has been observed at low temperatures (< 100 K) for the polycrystalline films due to the spin dependent scattering of conduction electrons at grain boundaries.     

Raman spectra and structural analysis in ZrOxNy thin films

Raman spectroscopy has been used as a local probe to characterize the structural evolution of magnetron-sputtered decorative zirconium oxynitride ZrO_xN_y films which result from an increase of reactive gas flow in the deposition. The lines shapes, the frequency position and widths of the Raman bands show a systematic change as a function of the reactive gas flow (a mixture of both oxygen and nitrogen). The as-deposited zirconium nitride film presents a Raman spectrum with the typical broadened bands, due to the disorder induced by N vacancies. The recorded Raman spectrum of the zirconium oxide film is typical of the monoclinic phase of ZrO₂, which is revealed also by X-ray diffraction. Raman spectra of zirconium oxynitride thin films present changes, which are found to be closely related with the oxygen content in films and the subsequent structural changes.     

Phase transformation and optical characteristics of porous germanium thin film

In this study, we proposed a method to prepare GeO₂ by treating porous Ge thin film with thermal annealing in O₂ ambient. After annealing, the morphological transformation from porous thin film to an island structure was observed. The crystallization and composition of the porous Ge thin film prepared using different annealing time in O₂ ambient were confirmed by X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectra. Initial Ge composition was gradually oxidized to GeO₂ with increasing annealing time. Comparing the photoluminescence (PL) results between Ge and GeO₂, it was found that the visible photoluminescence originated from the germanium oxide. Photoluminescence measurements obtained at different temperatures exhibited a maximum integrated PL intensity at around 200 K. A possible explanation for this behavior might be the competition between radiative recombination and nonradiative hopping process.     

Si1 − xGex metal-oxide-semiconductor capacitors with HfTaOx gate dielectrics

Interfacial reactions and electrical properties of RF sputter deposited HfTaO_x high-k gate dielectric films on Si_1 − xGe_x (x = 19%) are investigated. X-ray photoelectron spectroscopic analyses indicate an interfacial layer containing GeO_x, Hf silicate, SiO_x (layer of Hf-Si-Ge-O) formation during deposition of HfTaO_x. No evidence of Ta-silicate or Ta incorporation was found at the interface. The crystallization temperature of HfTaO_x film is found to increase significantly after annealing beyond 500 °C (for 5 min) along with the incorporation of Ta. HfTaO_x films (with 18% Ta) remain amorphous up to about 500 °C anneal. Electrical characterization of post deposition annealed (in oxygen at 600 °C) samples showed; capacitance equivalent thickness of ~ 4.3-5.7 nm, hysteresis of 0.5-0.8 V, and interface state density = 1.2-3.8 × 10¹² cm^− 2 eV^− 1. The valence and conduction band offsets were determined from X-ray photoelectron spectroscopy spectra after careful analyses of the experimental data and removal of binding energy shift induced by differential charging phenomena occurring during X-ray photoelectron spectroscopic measurements. The valence and conduction band offsets were found to be 2.45 ± 0.05 and 2.31 ± 0.05 eV, respectively, and a band gap of 5.8 ± 05 eV was found for annealed samples.