柔性SnO_2/ZnO复合光阳极的制备及其在染料敏化太阳能电池中的应用

通过简单易行的方法制备了SnO_2/ZnO复合纳米颗粒,利用XRD对SnO_2/ZnO结构进行表征。使用电泳技术制备无裂纹SnO_2/ZnO复合薄膜,考察了ZnCl2添加量对SnO_2/ZnO复合薄膜光阳极性能的影响,通过机械压膜方法对柔性导电衬底(ITO/PEN衬底)上的SnO_2/ZnO复合薄膜进行后处理,扫描电镜结果表明机械压膜处理使SnO_2/ZnO复合薄膜变得更加平滑,SnO_2/ZnO复合纳米颗粒之间的连接性能增强,光电测试结果表明机械压膜处理可以显著提高SnO_2/ZnO复合光阳极的光电性能,电池的开路光电压和短路光电流均得到明显提高,优化后柔性SnO_2/ZnO复合光阳极组装的染料敏化太阳能电池的光电转换效率(η)达到了3.95%,短路光电流密度(JSC)、开路光电压(VOC)和填充因子(FF)分别为16.43mA/cm2、0.493V和0.49。     

沉积Ag纳米层改善定型相变复合纤维膜的传热性能

以癸酸(CA)、月桂酸(LA)和肉豆蔻酸(MA)为原料制备了新型的脂肪酸三元低共熔物(CA-LA-MA),并将其作为固-液相变材料,以沉积2 h银(Ag)纳米颗粒的静电纺聚丙烯腈(PAN)纳米纤维膜为支撑材料,通过物理吸附法制备了新型的CA-LA-MA/PAN和CA-LA-MA/PAN/Ag定型相变复合纤维膜。研究了磁控溅射Ag纳米层对定型相变复合纤维传热性能的影响。结果表明,沉积Ag纳米层后定型相变复合纤维膜的储热和放热时间分别缩短了31%和25%。制备的CA-LA-MA/PAN/Ag定型相变复合纤维膜的融化温度和结晶温度分别为19.87℃和11.63℃,融化焓值和结晶焓值分别为123.1 kJ/kg和121.5 kJ/kg。     

磁控溅射法提高定型相变材料的储热和放热速率

首先采用磁控溅射法在静电纺聚氨酯(PU)纤维膜表面沉积纳米银(Ag)导热金属薄膜,并将其作为支撑材料,通过物理吸附法吸附癸酸-月桂酸-肉豆蔻酸-棕榈酸四元低共熔物(CA-LA-MA-PA),制备出新型的CALA-MA-PA/PU/Ag定型相变复合纤维膜。EDX测试结果显示Ag纳米颗粒已经被成功地沉积到静电纺PU纤维膜上。SEM图像显示经过磁控溅射后静电纺PU纤维的直径明显增加,CA-LA-MA-PA四元低共熔物被均匀地吸附到PU和PU/Ag纤维膜的孔隙结构中。热分析结果表明CA-LA-MA-PA/PU/Ag定型相变复合纤维膜的融化温度和融化焓值分别为17℃和94.81kJ/kg。与CA-LA-MA-PA/PU定型相变复合纤维膜相比较,CALA-MA-PA/PU/Ag定型相变复合纤维膜的储热和放热时间分别缩短了约42%和24%。     

连续制备柔性导热的氮化铝/芳纶纳米纤维复合薄膜

设计制备柔性导热材料对柔性电子器件的热管理具有重要意义。本文基于溶剂剥离的芳纶纳米纤维和氮化铝(AlN)纳米颗粒,采用溶胶-凝胶-薄膜转换方法,连续制备了柔性导热的AlN/芳纶纳米纤维复合薄膜材料。其中,芳纶纳米纤维形成了三维连通的网络结构,提供力学支撑作用;AlN颗粒填充在该网络结构中,赋予复合材料良好的导热性能。结果显示,该复合材料的拉伸强度为65.5 MPa,断裂应变为12%,反复折叠300次后其拉伸强度和断裂应变保持率在90%以上,导热率为13.98 W·(m·K)?1。此外,该复合薄膜显示出良好的绝缘性能和耐热性能,体积电阻率为1.85×1015 Ω·cm、起始热分解温度为524℃。最后,演示该高性能的AlN/芳纶纳米纤维复合薄膜作为柔性基底材料,可用于冷却电子器件。      

电化学沉积法制备PEDOT/PEDOT∶PSS基柔性纳米纤维膜及其热电性能

通过静电纺丝技术制备柔性热电薄膜是一种非常可行的方法,制得的纳米纤维会随机交叉排列形成多孔结构。该结构不仅可以增强薄膜的变形能力、柔性和延展性,还可以增加纳米纤维膜中低热导率的非流动空气的含量,有利于降低纳米纤维膜的导热系数,然而目前对于静电纺丝在柔性热电领域应用的相关研究非常少。本工作通过静电纺丝技术制备了具有良好自支撑性和柔性的聚(3,4-乙烯二氧噻吩)∶聚对苯乙烯磺酸钠(PEDOT∶PSS)基纳米纤维膜,并结合电化学聚合法在该纳米纤维表面沉积了PEDOT导电层,得到了PEDOT/PEDOT∶PSS基热电纳米纤维膜。研究发现,聚合电位和单体浓度对热电纳米纤维膜的导电率有很大影响,最终在聚合电位为1. 5 V、单体浓度为0. 03 mol/L时,电导率和塞贝克系数分别为9. 582 S·cm~(-1)和26. 7μV·K~(-1),最优PF值可达0. 68μW·m~(-1)·K~(-2)。     

Ag-TiO_2纳米纤维的制备及其光电转换性能研究

利用静电纺丝技术制备尺寸均一、性能稳定的Ag-TiO_2复合纳米纤维。结合了纳米银颗粒的表面等离激元共振效应,克服了TiO_2材料比表面积小、光生电子与空穴复合几率高以及对光生载流子量子化效率低的缺点,并且Ag纳米颗粒在复合材料中有很好的可调节性,同时这种材料的制备工艺简单、易重复。采用扫描电子显微镜(SEM),X射线衍射(XRD)对Ag-TiO_2复合纤维进行了表征,结果证明产物为Ag-TiO_2复合纳米纤维,且纤维分散性好、长径比大,同时掺杂均匀。相比较于TiO_2纳米纤维,Ag-TiO_2纳米纤维的光电转换性能明显提高。此外研究了Ag掺杂量对复合材料光电转换效果的影响,结果表明,掺杂10wt%Ag的Ag-TiO_2复合纳米纤维光电转换效率最高。     

PVA/PA6/TiO_2复合纳米纤维膜制备及光催化性能

通过静电纺丝技术制备聚乙烯醇/聚酰胺/纳米二氧化钛(PVA/PA6/TiO_2)复合纳米纤维,并考察了复合纳米纤维对模拟染料(亚甲基蓝和活性红X-3B)的光催化降解性能。利用扫描电子显微镜(SEM)、透射电镜(TEM)、能谱分析(EDX)、热重分析(TG)、X射线衍射分析(XRD)等表征测试对复合纳米纤维的形貌结构、表面元素分布进行分析。结果表明,用50 mg PVA/PA6/TiO_2复合纳米纤维膜(其中TiO_2含量是PVA/PA6质量的3%的)光催化降解50 mL浓度为5 mg/L亚甲基蓝溶液和50 mg/L活性红X-3B溶液,反应时间为120 min时,降解率分别为92.8%和87.5%。纳米纤维膜重复使用4次后,其亚甲基蓝降解率为86.6%,活性红X-3B降解率为66.9%,其依然保持良好的光催化性能。说明制备的复合纳米纤维膜具备优异的光催化性能及重复使用性。     

聚酰亚胺/TiO_2复合物纳米纤维的制备及其光催化性能研究

利用静电纺丝方法并协同亚胺化制备了聚酰亚胺(PI)/二氧化钛(TiO_2)复合纳米纤维膜。研究发现TiO_2成功复合到纳米纤维当中,随着TiO_2纳米颗粒含量的增加,纳米纤维的直径变细,PI/TiO_2复合纳米纤维膜的机械性能有所降低。光催化显示PI/TiO_2复合纳米纤维具有一定的光催化性能,TiO_2纳米颗粒较多时,降解的速率也较快,而且当延长降解时间后,降解速率会逐渐下降。     

PAN/CA复合纳米纤维膜的制备及性能表征

为了研究聚丙烯腈/二醋酸(PAN/CA)复合纳米纤维膜的截滤性能,以N,N-二甲基乙酰胺(DMAC)为溶剂,将PAN/CA以质量比分别为100/0、90/10、80/20共混配制成质量分数为10%的溶液,以静电纺丝技术,制备PAN/CA复合纳米纤维膜.借助扫描电镜(SEM)及相关测试软件,测出复合纳米纤维的平均直径分布...     

茶多酚/聚乳酸复合纳米纤维膜的制备及抗菌性能研究

采用静电纺丝技术,分别制备了聚乳酸(PLA)质量分数为8%的纳米纤维膜及茶多酚(TP)质量分数分别为0.5%、0.75%和1%的茶多酚/聚乳酸复合纳米纤维膜.借助扫描电子显微镜(SEM)观察和红外光谱分析,并利用振荡烧瓶法测试薄膜的抗茵性能.SEM图分析表明,添加TP对纳米纤维形态的分布影响不大.由红外光谱图分析可知,复合纳米纤维膜中确实存在茶多酚.抗茵结果表明,茶多酚/聚乳酸复合纳米纤维膜对大肠杆菌和金黄色葡萄球菌有良好的抗茵作用,并且随着纺丝液中TP含量的增加,抗茵性能不断提高,对金黄色葡萄球菌的抗菌效果也更好.     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.